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PROLA » Phys. Rev. B » Volume 51 » Issue 20
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Physical Review B – 15 May 1995
Volume 51, Issue 20

ARTICLES

Electronic structure: wide-band, narrow-band, and strongly correlated systems

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Order-N density-matrix electronic-structure method for general potentials
A. E. Carlsson
pp. 13935-13941 [View Page Images or PDF (1,057 kB)]
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Electronic structure of La1-xSrxMnO3 studied by photoemission and x-ray-absorption spectroscopy
T. Saitoh, A. E. Bocquet, T. Mizokawa, H. Namatame, A. Fujimori, M. Abbate, Y. Takeda, and M. Takano
pp. 13942-13951 [View Page Images or PDF (1,892 kB)]
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Soft-x-ray linear-dichroism and magnetic-circular-dichroism studies of CeRh3B2: Large crystal-field splitting and anomalous ferromagnetism
K. Yamaguchi, H. Namatame, A. Fujimori, T. Koide, T. Shidara, M. Nakamura, A. Misu, H. Fukutani, M. Yuri, M. Kasaya, H. Suzuki, and T. Kasuya
pp. 13952-13960 [View Page Images or PDF (1,769 kB)]
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Defect structures in a layer-by-layer photonic band-gap crystal
E. Özbay, G. Tuttle, M. Sigalas, C. M. Soukoulis, and K. M. Ho
pp. 13961-13965 [View Page Images or PDF (832 kB)]
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Influence of superexchange on Ni 2p x-ray-absorption spectroscopy in NiO
M. A. van Veenendaal, D. Alders, and G. A. Sawatzky
pp. 13966-13971 [View Page Images or PDF (946 kB)]
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Electronic structure of antimony-doped tin oxide
K. C. Mishra, K. H. Johnson, and P. C. Schmidt
pp. 13972-13976 [View Page Images or PDF (966 kB)]
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Signatures of Fano resonances in four-wave-mixing experiments
T. Meier, A. Schulze, P. Thomas, H. Vaupel, and K. Maschke
pp. 13977-13986 [View Page Images or PDF (1,295 kB)]
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Orbital polarization in metallic f-electron systems
Igor S. Sandalov, Olof Hjortstam, Börje Johansson, and Olle Eriksson
pp. 13987-14000 [View Page Images or PDF (2,644 kB)]
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Dominant density parameters and local pseudopotentials for simple metals
Carlos Fiolhais, John P. Perdew, Sean Q. Armster, James M. MacLaren, and Marta Brajczewska
pp. 14001-14011 [View Page Images or PDF (1,866 kB)]
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Single-particle spectral function of a generalized Hubbard model: Metal-insulator transition
E. R. Gagliano, A. A. Aligia, Liliana Arrachea, and Michel Avignon
pp. 14012-14019 [View Page Images or PDF (1,115 kB)]
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Hopping transport in a magnetic field: Kadanoff-Baym-Keldysh approach and magnetoconductivity
O. Bleibaum, H. Böttger, V. V. Bryksin, and F. Schulz
pp. 14020-14034 [View Page Images or PDF (2,471 kB)]
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Experimental and theoretical electronic distributions in Al-Cu-based alloys
Guy Trambly de Laissardière, Zoltán Dankházi, Esther Belin, Anne Sadoc, Nguyen Manh Duc, Didier Mayou, Michael A. Keegan, and Dimitrios A. Papaconstantopoulos
pp. 14035-14047 [View Page Images or PDF (2,108 kB)]
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Electronic structure and total-energy calculations by a semi-self-consistent augmented-plane-wave method
M. A. Keegan and D. A. Papaconstantopoulos
pp. 14048-14056 [View Page Images or PDF (1,297 kB)]
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Real-space electronic-structure calculations: Combination of the finite-difference and conjugate-gradient methods
Ari P. Seitsonen, M. J. Puska, and R. M. Nieminen
pp. 14057-14061 [View Page Images or PDF (1,054 kB)]
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Charge-transfer multiplet analysis of the resonant 2p3p3p Auger spectra of CaF2
F. M. F. de Groot, R. Ruus, and M. Elango
pp. 14062-14068 [View Page Images or PDF (1,169 kB)]
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Quasiparticle spectra and the calculation of thermodynamics for a two-dimensional Fermi liquid
D. Coffey
pp. 14069-14076 [View Page Images or PDF (1,133 kB)]
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High-temperature series expansion for the extended Hubbard model
M. Bartkowiak, J. A. Henderson, J. Oitmaa, and P. E. de Brito
pp. 14077-14084 [View Page Images or PDF (1,301 kB)]
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Electronic transport through a planar defect in the bulk
Chr. Kunze
pp. 14085-14091 [View Page Images or PDF (1,219 kB)]
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Photoelectron spectroscopy of strongly correlated systems: Effects of nonlocal interactions
Jianzhong Zheng and Changfeng Chen
pp. 14092-14102 [View Page Images or PDF (1,937 kB)]
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Insulator-metal transition and giant magnetoresistance in La1-xSrxMnO3
A. Urushibara, Y. Moritomo, T. Arima, A. Asamitsu, G. Kido, and Y. Tokura
pp. 14103-14109 [View Page Images or PDF (1,198 kB)]

Semiconductors I: bulk

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Theory of reflectance-difference spectroscopy in ordered III-V semiconductor alloys
Su-Huai Wei and Alex Zunger
pp. 14110-14114 [View Page Images or PDF (777 kB)]
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Photothermal reflection versus temperature: Quantitative analysis
Marios Nestoros, Benoît C. Forget, Constantinos Christofides, and Antonios Seas
pp. 14115-14123 [View Page Images or PDF (1,356 kB)]
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Free magnetic polaron: A nonlinear Hamiltonian approach
C. Benoit à la Guillaume, Yu. G. Semenov, and M. Combescot
pp. 14124-14133 [View Page Images or PDF (1,517 kB)]
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Intervalley electron scattering in the presence of a planar interface
Robert B. Darling and Arash K. Kia
pp. 14134-14141 [View Page Images or PDF (1,369 kB)]
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Deep levels in hafnium- and zirconium-doped indium phosphide
H. Scheffler, N. Baber, A. Dadgar, D. Bimberg, J. Winterfeld, and H. Schumann
pp. 14142-14146 [View Page Images or PDF (779 kB)]
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Monte Carlo study of the statistics of electron capture by shallow donors in silicon at low temperatures
A. Palma, J. A. Jiménez-Tejada, A. Godoy, J. A. López-Villanueva, and J. E. Carceller
pp. 14147-14151 [View Page Images or PDF (902 kB)]
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Introduction of metastable vacancy defects in electron-irradiated semi-insulating GaAs
K. Saarinen, S. Kuisma, J. Mäkinen, P. Hautojärvi, M. Törnqvist, and C. Corbel
pp. 14152-14163 [View Page Images or PDF (2,418 kB)]
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Hierarchy of density matrices in coherent semiconductor optics
K. Victor, V. M. Axt, and A. Stahl
pp. 14164-14175 [View Page Images or PDF (2,049 kB)]
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Zero-field-splitting parameters of Cr2+ ion in GaAs
Yi-Yang Zhou and Fu-Zhen Li
pp. 14176-14185 [View Page Images or PDF (1,494 kB)]
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Ultrafast laser-induced order-disorder transitions in semiconductors
K. Sokolowski-Tinten, J. Bialkowski, and D. von der Linde
pp. 14186-14198 [View Page Images or PDF (2,461 kB)]
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Polarized electroabsorption spectroscopy of highly ordered poly(2-methoxy,5-(2’-ethyl-hexoxy)-p-phenylene vinylene)
T. W. Hagler, K. Pakbaz, and A. J. Heeger
pp. 14199-14206 [View Page Images or PDF (1,357 kB)]
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Transient nonlinear electrical transport of hot electrons in nonpolar semiconductors
Deug Yong Kim and Chang Sub Kim
pp. 14207-14220 [View Page Images or PDF (2,182 kB)]
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Damped Ruderman-Kittel-Kasuya-Yosida interaction among local magnetic moments in the impurity-band regime of doped semiconductors
Carmen Lúcia C. Ochi and Norberto Majlis
pp. 14221-14225 [View Page Images or PDF (730 kB)]
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Photoacoustic investigation of transport in semiconductors: Theoretical and experimental study of a Ge single crystal
M. D. Dramićanin, P. M. Nikolić, Z. D. Ristovski, D. G. Vasiljević, and D. M. Todorović
pp. 14226-14232 [View Page Images or PDF (1,080 kB)]
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Nonequilibrium dynamics of hot carriers and hot phonons in CdSe and GaAs
S. S. Prabhu, A. S. Vengurlekar, S. K. Roy, and Jagdeep Shah
pp. 14233-14246 [View Page Images or PDF (2,448 kB)]
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Nonequilibrium total-dielectric-function approach to the electron Boltzmann equation for inelastic scattering in doped polar semiconductors
B. A. Sanborn
pp. 14247-14255 [View Page Images or PDF (1,492 kB)]
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Electron-electron interactions, coupled plasmon-phonon modes, and mobility in n-type GaAs
B. A. Sanborn
pp. 14256-14264 [View Page Images or PDF (1,426 kB)]

Semiconductors II: surfaces, interfaces, microstructures, and related topics

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Chemistry at the Al- and Au-ZnSe(100) interfaces
W. Chen, A. Kahn, P. Soukiassian, P. S. Mangat, J. Gaines, C. Ponzoni, and D. Olego
pp. 14265-14270 [View Page Images or PDF (1,072 kB)]
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InAs(110)-p(1×1)-Sb(1 ML): Electronic structure and surface bonding
A. B. McLean, D. M. Swanston, D. N. McIlroy, D. Heskett, R. Ludeke, and H. Munekata
pp. 14271-14277 [View Page Images or PDF (1,159 kB)]
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Precise nonequilibrium distribution function for a one-dimensional electron gas
I. I. Boiko and A. L. Chudnovskiy
pp. 14278-14285 [View Page Images or PDF (1,005 kB)]
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Interaction of oxygen with a Rb-covered InSb(111) surface
J. X. Wu, M. S. Ma, X. M. Liu, J. S. Zhu, M. R. Ji, P. S. Xu, and T. X. Zhao
pp. 14286-14292 [View Page Images or PDF (1,261 kB)]
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Formation of facets and pyramidlike structures in molecular-beam-epitaxy growth of Si on a singular Si(111) surface
H.-N. Yang, G.-C. Wang, and T.-M. Lu
pp. 14293-14299 [View Page Images or PDF (1,251 kB)]
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Direct and Rb-promoted SiOx/β-SiC(100) interface formation
M. Riehl-Chudoba, P. Soukiassian, C. Jaussaud, and S. Dupont
pp. 14300-14310 [View Page Images or PDF (2,148 kB)]
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Free-carrier and intersubband infrared absorption in p-type Si1-xGex/Si multiple quantum wells
S. Zanier, J. M. Berroir, Y. Guldner, J. P. Vieren, I. Sagnes, F. Glowacki, Y. Campidelli, and P. A. Badoz
pp. 14311-14316 [View Page Images or PDF (1,113 kB)]
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Ellipsometric and thermoreflectance spectra of epitaxial InSb films
Sadao Adachi and Takayuki Miyazaki
pp. 14317-14323 [View Page Images or PDF (1,122 kB)]
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Enhancement of nonradiative recombination due to resonant electron capture in AlxGa1-xAs/GaAs quantum-well structures
A. Fujiwara, K. Muraki, S. Fukatsu, Y. Shiraki, and R. Ito
pp. 14324-14329 [View Page Images or PDF (1,139 kB)]
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Shape transition in the epitaxial growth of gold silicide in Au thin films on Si(111)
K. Sekar, G. Kuri, P. V. Satyam, B. Sundaravel, D. P. Mahapatra, and B. N. Dev
pp. 14330-14336 [View Page Images or PDF (1,906 kB)]
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Theory of the interface exciton in a strong magnetic field
Nguyen Ai Viet and Joseph L. Birman
pp. 14337-14340 [View Page Images or PDF (670 kB)]
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Choking of electron flow: A mechanism of current saturation in field-effect transistors
M. I. Dyakonov and M. S. Shur
pp. 14341-14345 [View Page Images or PDF (882 kB)]
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Energy levels and exciton oscillator strength in submonolayer InAs-GaAs heterostructures
M. V. Belousov, N. N. Ledentsov, M. V. Maximov, P. D. Wang, I. N. Yasievich, N. N. Faleev, I. A. Kozin, V. M. Ustinov, P. S. Kop’ev, and C. M. Sotomayor Torres
pp. 14346-14351 [View Page Images or PDF (1,142 kB)]
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Theoretical study of strained thin quantum wells grown on vicinal surfaces
J. A. Porto and J. Sánchez-Dehesa
pp. 14352-14360 [View Page Images or PDF (1,545 kB)]
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Coherent vertical transport of excitons in multiple quantum wells
D. S. Citrin
pp. 14361-14369 [View Page Images or PDF (1,590 kB)]
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Excitons in self-organized semiconductor/insulator superlattices: PbI-based perovskite compounds
E. A. Muljarov, S. G. Tikhodeev, N. A. Gippius, and Teruya Ishihara
pp. 14370-14378 [View Page Images or PDF (1,316 kB)]
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Nonlocal optical response of assemblies of semiconductor spheres
Yasushi Ohfuti and Kikuo Cho
pp. 14379-14394 [View Page Images or PDF (2,340 kB)]
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Excitons and fundamental absorption in quantum wells
R. Winkler
pp. 14395-14409 [View Page Images or PDF (2,437 kB)]
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High-frequency damping of plasmons in quasi-one-dimensional electron systems
B. Tanatar
pp. 14410-14413 [View Page Images or PDF (689 kB)]
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Exciton Stark and Landau ladders in a GaAs/AlxGa1-xAs superlattice
Z. Barticevic, M. Pacheco, and F. Claro
pp. 14414-14420 [View Page Images or PDF (1,156 kB)]
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Nonlinear steady-state mesoscopic transport: Formalism
M. D. Johnson and O. Heinonen
pp. 14421-14436 [View Page Images or PDF (3,108 kB)]
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Microcavity exciton-polariton splitting in the linear regime
Stanley Pau, Gunnar Björk, Joseph Jacobson, Hui Cao, and Yoshihisa Yamamoto
pp. 14437-14447 [View Page Images or PDF (1,718 kB)]
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Selection rules and dispersion of GaAs/AlAs multiple-quantum-well optical phonons studied by Raman scattering in right-angle, forward, and backscattering in-plane geometries
A. Fainstein, P. Etchegoin, M. P. Chamberlain, M. Cardona, K. Tötemeyer, and K. Eberl
pp. 14448-14458 [View Page Images or PDF (2,268 kB)]
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Comparison of the (2×2) reconstructions of GaAs{111} surfaces
J. M. C. Thornton, P. Weightman, D. A. Woolf, and C. J. Dunscombe
pp. 14459-14469 [View Page Images or PDF (2,669 kB)]
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Structural and electronic properties during the initial stages of Ge-GaAs(110) interface formation
Jingguang Che, Albert Mazur, and Johannes Pollmann
pp. 14470-14478 [View Page Images or PDF (1,584 kB)]
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Fractional exclusion statistics and anyons
Wei Chen and Y. Jack Ng
pp. 14479-14482 [View Page Images or PDF (593 kB)]
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Conductance fluctuations in a disordered double-barrier junction
J. A. Melsen and C. W. J. Beenakker
pp. 14483-14489 [View Page Images or PDF (1,012 kB)]
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Coherent effects induced by static and time-dependent electric fields in semiconductors
T. Meier, G. von Plessen, P. Thomas, and S. W. Koch
pp. 14490-14497 [View Page Images or PDF (1,629 kB)]
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Capacitance of electron wires in a high magnetic field
A. O. Govorov
pp. 14498-14503 [View Page Images or PDF (994 kB)]
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Theoretical study of the Si(100) surface reconstruction
A. Ramstad, G. Brocks, and P. J. Kelly
pp. 14504-14523 [View Page Images or PDF (4,146 kB)]
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Low-temperature transport of excitons in type-II GaAs/AlAs quantum wells
Alexander B. Dzyubenko and Gerrit E. W. Bauer
pp. 14524-14531 [View Page Images or PDF (1,379 kB)]
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Multiphonon-assisted tunneling through deep levels: A rapid energy-relaxation mechanism in nonideal quantum-dot heterostructures
Peter C. Sercel
pp. 14532-14541 [View Page Images or PDF (1,722 kB)]
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Magneto-optical study of quantum-well electronic structure using disorder-induced resonant acoustic-phonon Raman scattering
G. Goldoni, T. Ruf, V. F. Sapega, A. Fainstein, and M. Cardona
pp. 14542-14548 [View Page Images or PDF (1,356 kB)]

Surface physics, low-dimensional systems, and related topics

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Small-cone method of directly forming atomic images from energy-dependent photoelectron-diffraction data
Huasheng Wu and G. J. Lapeyre
pp. 14549-14553 [View Page Images or PDF (1,022 kB)]
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Growth mechanisms and defects in boronated CVD diamond as identified by scanning tunneling microscopy
T. J. Kreutz, R. E. Clausing, L. Heatherly, Jr., R. J. Warmack, T. Thundat, C. S. Feigerle, and K. Wandelt
pp. 14554-14558 [View Page Images or PDF (1,784 kB)]
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Model study of keV-ion mixing of metallic interfaces: Influence of materials properties and deposited energy
Heinrich Gades and Herbert M. Urbassek
pp. 14559-14569 [View Page Images or PDF (1,659 kB)]
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Spin-flip scattering for the electrical property of metallic-nanoparticle thin films
Juh Tzeng Lue, Wen Chu Huang, and Shav Kwen Ma
pp. 14570-14575 [View Page Images or PDF (1,000 kB)]
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Calculated properties of a prototypical ionic monolayer
Jin Z. Wu, S. B. Trickey, John R. Sabin, and J. C. Boettger
pp. 14576-14586 [View Page Images or PDF (2,014 kB)]
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Hidden structure of the low-energy spectrum of a one-dimensional localized Frenkel exciton
Victor Malyshev and Pablo Moreno
pp. 14587-14593 [View Page Images or PDF (1,166 kB)]
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Evidence for the leading role of the stacking-fault triangle in the Si(111) 1×1→7×7 phase transition
T. Hoshino, K. Kumamoto, K. Kokubun, T. Ishimaru, and I. Ohdomari
pp. 14594-14597 [View Page Images or PDF (1,500 kB)]
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Interpretation of the control of the photon emission stimulated by STM
V. Sivel, R. Coratger, F. Ajustron, and J. Beauvillain
pp. 14598-14603 [View Page Images or PDF (1,209 kB)]
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Theory of ion-stimulated electron emission from simple metals: Explicit calculations
J. A. Gaspar, A. G. Eguiluz, and D. L. Mills
pp. 14604-14611 [View Page Images or PDF (1,414 kB)]
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Wetting on rough self-affine surfaces
George Palasantzas
pp. 14612-14615 [View Page Images or PDF (688 kB)]
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First-principles studies of NO chemisorption on rhodium, palladium, and platinum surfaces
M.-H. Tsai and K. C. Hass
pp. 14616-14625 [View Page Images or PDF (2,000 kB)]
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Finite-conical-well model for vertically adsorbed diatomic molecules
Y. T. Shih, D. S. Chuu, and W. N. Mei
pp. 14626-14635 [View Page Images or PDF (1,524 kB)]
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Melting transition in two dimensions: A finite-size scaling analysis of bond-orientational order in hard disks
H. Weber, D. Marx, and K. Binder
pp. 14636-14651 [View Page Images or PDF (3,013 kB)]
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Absorption spectroscopic measurements of plume density and temperature in production of nanocrystalline NbAl3 by laser ablation deposition
T. P. Duffey, T. G. McNeela, T. Yamamoto, J. Mazumder, and A. L. Schawlow
pp. 14652-14663 [View Page Images or PDF (2,491 kB)]
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Roughening transitions of driven surface growth
Angel Sánchez, David Cai, Niels Gro/nbech-Jensen, A. R. Bishop, and Z. J. Wang
pp. 14664-14668 [View Page Images or PDF (840 kB)]
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Structural, electronic, and vibrational properties of diamond (100), (111), and (110) surfaces from ab initio calculations
Dominic R. Alfonso, David A. Drabold, and Sergio E. Ulloa
pp. 14669-14685 [View Page Images or PDF (3,649 kB)]
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Width of the plasmon resonance in metal clusters
B. Montag and P.-G. Reinhard
pp. 14686-14692 [View Page Images or PDF (1,315 kB)]

BRIEF REPORTS

Electronic structure: wide-band, narrow-band, and strongly correlated systems

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Metal-insulator transition in the two-band Hubbard model
W. Barford, E. R. Gagliano, and C. Vermeulen
pp. 14693-14696 [View Page Images or PDF (568 kB)]
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Symmetric stress tensor in the local-density-functional framework using a separable nonlocal pseudopotential
In-Ho Lee, Sun-Ghil Lee, and K. J. Chang
pp. 14697-14700 [View Page Images or PDF (499 kB)]
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Efficient quasiparticle band-structure calculations for cubic and noncubic crystals
B. Wenzien, G. Cappellini, and F. Bechstedt
pp. 14701-14704 [View Page Images or PDF (783 kB)]
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Electronic and structural properties of cubic BN and BP
P. Rodríguez-Hernández, M. González-Diaz, and A. Muñoz
pp. 14705-14708 [View Page Images or PDF (630 kB)]

Semiconductors I: bulk

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Comparative spectroscopic studies of Cs- and K-doped polyacetylene
S. Chiali, P. Bernier, S. Lefrant, and R. Nuffer
pp. 14709-14712 [View Page Images or PDF (696 kB)]

Semiconductors II: surfaces, interfaces, microstructures, and related topics

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Coherent oscillations in semiconductor microcavities
Hailin Wang, Jagdeep Shah, T. C. Damen, W. Y. Jan, J. E. Cunningham, M. Hong, and J. P. Mannaerts
pp. 14713-14716 [View Page Images or PDF (778 kB)]
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Annealing effect on native-oxide/Si(111) interfaces studied by second-harmonic generation
Hiroyuki Hirayama and Kohji Watanabe
pp. 14717-14720 [View Page Images or PDF (724 kB)]
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Reconstruction of the GaAs (311)A surface
M. Wassermeier, J. Sudijono, M. D. Johnson, K. T. Leung, B. G. Orr, L. Däweritz, and K. Ploog
pp. 14721-14724 [View Page Images or PDF (1,213 kB)]
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Skyrmions in higher Landau levels
X.-G. Wu and S. L. Sondhi
pp. 14725-14728 [View Page Images or PDF (563 kB)]
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Experimental determination of the quasiparticle charge and the energy gap in the fractional quantum Hall effect
S. I. Dorozhkin, R. J. Haug, K. von Klitzing, and K. Ploog
pp. 14729-14732 [View Page Images or PDF (686 kB)]
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Entangled electronic states in multiple-quantum-dot systems
S. C. Benjamin and N. F. Johnson
pp. 14733-14736 [View Page Images or PDF (613 kB)]
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Proposed magnetoinductance measurements in the quantum-Hall-effect regime: Current distribution in edge channels
C. Méndez and J. Simonin
pp. 14737-14740 [View Page Images or PDF (528 kB)]
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Quantum-conductance-fluctuation correlation range and amplitude as a parameter-independent probe of the localized-to-extended-state transition in narrow Si MOSFET’s
J. C. Licini and S. B. Field
pp. 14741-14744 [View Page Images or PDF (627 kB)]
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Spatially indirect transitions due to coupling between a hole accumulation layer and a quantum well in resonant-tunneling diodes
C. Van Hoof, J. Genoe, J. C. Portal, and G. Borghs
pp. 14745-14748 [View Page Images or PDF (675 kB)]

Surface physics, low-dimensional systems, and related topics

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Surface core-level shifts on Nb(001)
W.-S. Lo, T.-S. Chien, C.-C. Tsan, and B.-S. Fang
pp. 14749-14752 [View Page Images or PDF (689 kB)]
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Thermal diffuse scattering from surface-melted Pb(110)
H. M. van Pinxteren, S. Chandavarkar, W. J. Huisman, J. M. Gay, and E. Vlieg
pp. 14753-14755 [View Page Images or PDF (543 kB)]

COMMENTS

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Comment on ‘‘Role played by N and N-N impurities in type-IV semiconductors’’
F. Berg Rasmussen, B. Bech Nielsen, R. Jones, and S. Öberg
pp. 14756-14757 [View Page Images or PDF (271 kB)]

RAPID COMMUNICATIONS

Semiconductors I: bulk

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Nearest-neighbor isotopic fine structure of the AsP gap mode in GaP
E. G. Grosche, M. J. Ashwin, R. C. Newman, D. A. Robbie, M. J. L. Sangster, T. Pletl, P. Pavone, and D. Strauch
pp. 14758-14761 [View Page Images or PDF (730 kB)]
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Structure of negatively charged muonium in n-type GaAs
K.H. Chow, R.F. Kiefl, W.A. MacFarlane, J.W. Schneider, D.W. Cooke, M. Leon, M. Paciotti, T.L. Estle, B. Hitti, R.L. Lichti, S.F.J. Cox, C. Schwab, E.A. Davis, A. Morrobel-Sosa, and L. Zavieh
pp. 14762-14765 [View Page Images or PDF (759 kB)]

Semiconductors II: surfaces, interfaces, microstructures, and related topics

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Structural characterization of (In,Ga)As quantum dots in a GaAs matrix
S. Ruvimov, P. Werner, K. Scheerschmidt, U. Gösele, J. Heydenreich, U. Richter, N. N. Ledentsov, M. Grundmann, D. Bimberg, V. M. Ustinov, A. Yu. Egorov, P. S. Kop’ev, and Zh. I. Alferov
pp. 14766-14769 [View Page Images or PDF (1,397 kB)]
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Effect of spatial dispersion on acoustoelectric current in a high-mobility two-dimensional electron gas
J. M. Shilton, D. R. Mace, V. I. Talyanskii, M. Pepper, M. Y. Simmons, A. C. Churchill, and D. A. Ritchie
pp. 14770-14773 [View Page Images or PDF (725 kB)]
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Correlation between photoluminescence and density of electronic states in laser-deposited porous silicon
R. Laiho and A. Pavlov
pp. 14774-14777 [View Page Images or PDF (944 kB)]
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Chemical-state-resolved x-ray standing-wave analysis using chemical shift in photoelectron spectra
Munehiro Sugiyama, Satoshi Maeyama, Stefan Heun, and Masaharu Oshima
pp. 14778-14781 [View Page Images or PDF (740 kB)]
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Suppression of the Kondo effect in quantum dots by even-odd asymmetry
Yi Wan, Philip Phillips, and Qiming Li
pp. 14782-14785 [View Page Images or PDF (781 kB)]
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Role of Ge surface segregation in Si/Ge interfacial ordering: Interface formation on a monohydride surface
Nobuyuki Ikarashi, Atsushi Oshiyama, Akira Sakai, and Toru Tatsumi
pp. 14786-14789 [View Page Images or PDF (1,018 kB)]

Surface physics, low-dimensional systems, and related topics

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Importance of the additional step-edge barrier in determining film morphology during epitaxial growth
J. A. Meyer, J. Vrijmoeth, H. A. van der Vegt, E. Vlieg, and R. J. Behm
pp. 14790-14793 [View Page Images or PDF (763 kB)]
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Metallic conductivity and metal-insulator transition in (AC60)n (A=K, Rb, and Cs) linear polymer fullerides
F. Bommeli, L. Degiorgi, P. Wachter, Ö. Legeza, A. Jánossy, G. Oszlanyi, O. Chauvet, and L. Forro
pp. 14794-14797 [View Page Images or PDF (675 kB)]
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Determination of step-edge barriers to interlayer transport from surface morphology during the initial stages of homoepitaxial growth
Pavel Šmilauer and S. Harris
pp. 14798-14801 [View Page Images or PDF (810 kB)]
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Further lowering of work function by oxygen adsorption on the K/Si(001) surface
Yoshitada Morikawa
pp. 14802-14805 [View Page Images or PDF (791 kB)]
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Indium-induced lowering of the Schwoebel barrier in the homoepitaxial growth of Cu(100)
H.A. van der Vegt, M. Breeman, S. Ferrer, V.H. Etgens, X. Torrelles, P. Fajardo, and E. Vlieg
pp. 14806-14809 [View Page Images or PDF (788 kB)]
 
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