Physical Review B
– 15 November 1995
Volume 52, Issue 20
RAPID COMMUNICATIONS
Electronic structure: wide-band, narrow-band, and strongly correlated systems
Semiconductors I: bulk
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Barrier between localized and shallow neutral donor states in GaAs:Ge
C. Skierbiszewski, W. Jantsch, Z. Wilamowski, K. Lübke, and T. Suski
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Enhanced optical properties in porous silicon microcavities
Vittorio Pellegrini, Alessandro Tredicucci, Claudio Mazzoleni, and Lorenzo Pavesi
Semiconductors II: surfaces, interfaces, microstructures, and related topics
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Lead-induced transition to chaos in ballistic mesoscopic billiards
J. P. Bird, D. M. Olatona, R. Newbury, R. P. Taylor, K. Ishibashi, M. Stopa, Y. Aoyagi, T. Sugano, and Y. Ochiai
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Observation of Wannier-Stark ladder transitions in InxGa1-xAs-GaAs piezoelectric superlattices
D. W. Peggs, M. S. Skolnick, D. M. Whittaker, R. A. Hogg, A. R. K. Willcox, D. J. Mowbray, R. Grey, G. J. Rees, L. Hart, M. Hopkinson, G. Hill, and M. A. Pate
Surface physics, low-dimensional systems, and related topics
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Effect of strain on surface diffusion and nucleation
Harald Brune, Karsten Bromann, Holger Röder, Klaus Kern, Joachim Jacobsen, Per Stoltze, Karsten Jacobsen, and Jens No/rskov
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Superstructures and defect structures revealed by atomic-scale STM imaging of WO3(001)
F. H. Jones, K. Rawlings, J. S. Foord, P. A. Cox, R. G. Egdell, J. B. Pethica, and B. M. R. Wanklyn
ARTICLES
Electronic structure: wide-band, narrow-band, and strongly correlated systems
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Impurity effects on atomic bonding in Ni3Al
Sheng N. Sun, Nicholas Kioussis, Say-Peng Lim, A. Gonis, and William H. Gourdin
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Photoemission and bremsstrahlung isochromat spectra of U3P4 and U3As4
S. Suga, H. Matsubara, T. Ishii, A. Ochiai, T. Suzuki, and T. Kasuya
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Pressure effects on the electronic structure and low-temperature states in the α-(BEDT-TTF)2MHg(SCN)4 organic-conductor family (M=K, Rb, Tl, NH4)
J. S. Brooks, X. Chen, S. J. Klepper, S. Valfells, G. J. Athas, Y. Tanaka, T. Kinoshita, N. Kinoshita, M. Tokumoto, H. Anzai, and C. C. Agosta
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Symmetry-selective resonant inelastic x-ray scattering of C60
Yi Luo, Hans Ågren, Faris Gel’mukhanov, Jinghua Guo, Per Skytt, Nial Wassdahl, and Joseph Nordgren
Semiconductors I: bulk
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Optical functions of ion-implanted, laser-annealed heavily doped silicon
G. E. Jellison, Jr., S. P. Withrow, J. W. McCamy, J. D. Budai, D. Lubben, and M. J. Godbole
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Two-photon spectroscopy of ZnSe under uniaxial stress
D. Fröhlich, W. Nieswand, U. W. Pohl, and J. Wrzesinski
Semiconductors II: surfaces, interfaces, microstructures, and related topics
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Persistent-photoconductivity effect in δ-doped Al0.48In0.52As/Ga0.47In0.53As heterostructures
Ikai Lo, D. P. Wang, K. Y. Hsieh, T. F. Wang, W. C. Mitchel, M. Ahoujja, J.-P. Cheng, A. Fathimulla, and H. Hier
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Edge-state transport in finite antidot lattices
R. Schuster, K. Ensslin, V. Dolgopolov, J. P. Kotthaus, G. Böhm, and W. Klein
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Fourfold anisotropy and structural behavior of epitaxial hcp Co/GaAs(001) thin films
E. Gu, M. Gester, R. J. Hicken, C. Daboo, M. Tselepi, S. J. Gray, J. A. C. Bland, L. M. Brown, T. Thomson, and P. C. Riedi
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Surface phonons of the Si(111)-7×7 reconstructed surface
Jeongnim Kim, Mei-Ling Yeh, Furrukh S. Khan, and John W. Wilkins
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Thermal carrier emission from a semiconductor quantum well
S. Weber, W. Limmer, K. Thonke, R. Sauer, K. Panzlaff, G. Bacher, H. P. Meier, and P. Roentgen
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Linear-response theory of Coulomb drag in coupled electron systems
Karsten Flensberg, Ben Yu-Kuang Hu, Antti-Pekka Jauho, and Jari M. Kinaret
Surface physics, low-dimensional systems, and related topics
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Raman spectroscopy of C60 solid films
J. L. Sauvajol, F. Brocard, Z. Hricha, and A. Zahab
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Theory of carbon nanotube growth
A. Maiti, C. J. Brabec, C. Roland, and J. Bernholc
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Initial stages of the growth of SrF2 on InP
S. Heun, M. Sugiyama, S. Maeyama, Y. Watanabe, and M. Oshima
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Terrace distribution during sputtering and recovery of InSb(110) studied by He-atom scattering
D. Cvetko, V. De Renzi, L. Floreano, A. Morgante, M. Peloi, F. Tommasini, V. Cháb, and K. C. Prince
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Surface plasmon dispersion and damping on Ag(111)
M. Rocca, Li Yibing, F. Buatier de Mongeot, and U. Valbusa
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