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PROLA » Phys. Rev. B » Volume 53 » Issue 12
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Physical Review B – 15 March 1996
Volume 53, Issue 12

RAPID COMMUNICATIONS

Electronic structure: wide-band, narrow-band, and strongly correlated systems

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Linear-response calculation of electron-phonon coupling parameters
Amy Y. Liu and Andrew A. Quong
pp. R7575-R7579 [View PDF (103 kB)]
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Optically detected magnetic-resonance study of triplet-state dynamics in C70
P. A. Lane, X. Wei, Z. V. Vardeny, J. Partee, and J. Shinar
pp. R7580-R7583 [View PDF (126 kB)]
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Electronic structure and the metal-insulator transition in NiS2-xSex
A. Y. Matsuura, Z. -X. Shen, D. S. Dessau, C. -H. Park, T. Thio, J. W. Bennett, and O. Jepsen
pp. R7584-R7587 [View PDF (117 kB)]

Semiconductors I: bulk

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Infrared absorption related to the metastable state of arsenic antisite defects in electron-irradiated GaAs
S. Kuisma, K. Saarinen, P. Hautojärvi, and C. Corbel
pp. R7588-R7591 [View PDF (101 kB)]

Semiconductors II: surfaces, interfaces, microstructures, and related topics

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Determination of the limiting mobility of a two-dimensional electron gas in AlxGa1-xAs/GaAs heterostructures and direct measurement of the energy relaxation time
A. A. Verevkin, N. G. Ptitsina, G. M. Chulcova, G. N. Gol'tsman, E. M. Gershenzon, and K. S. Yngvesson
pp. R7592-R7595 [View PDF (105 kB)]
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Measurements of a composite fermion split-gate device
C. -T. Liang, C. G. Smith, D. R. Mace, J. T. Nicholls, J. E. F. Frost, M. Y. Simmons, A. R. Hamilton, D. A. Ritchie, and M. Pepper
pp. R7596-R7598 [View PDF (105 kB)]
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Shubnikov-de Haas oscillations in a two-dimensional electron gas in a spatially random magnetic field
F. B. Mancoff, L. J. Zielinski, C. M. Marcus, K. Campman, and A. C. Gossard
pp. R7599-R7602 [View PDF (258 kB)]
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Nonlinear electron-wave directional coupler
N. Tsukada, M. Gotoda, M. Nunoshita, and T. Nishino
pp. R7603-R7606 [View PDF (100 kB)]
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Optical second-harmonic electroreflectance spectroscopy of a Si(001) metal-oxide-semiconductor structure
J. I. Dadap, X. F. Hu, M. H. Anderson, M. C. Downer, J. K. Lowell, and O. A. Aktsipetrov
pp. R7607-R7609 [View PDF (88 kB)]
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Scaling of surface roughness in a heterogeneous film growth system: GexSi1-x on Si
Chung-Yu Mou and J. W. P. Hsu
pp. R7610-R7613 [View PDF (2,334 kB)]
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Phase diagram of vortices in double-layer quantum Hall systems
Igor Tupitsyn, Mats Wallin, and Anders Rosengren
pp. R7614-R7617 [View PDF (109 kB)]
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Spectral correlation and response functions in quantum dots
N. Taniguchi, B. D. Simons, and B. L. Altshuler
pp. R7618-R7621 [View PDF (150 kB)]
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Microscopic study of the pressure-induced structural phase transition of ZnTe
Gun-Do Lee and Jisoon Ihm
pp. R7622-R7625 [View PDF (77 kB)]
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Electronic conduction through organic molecules
M. P. Samanta, W. Tian, S. Datta, J. I. Henderson, and C. P. Kubiak
pp. R7626-R7629 [View PDF (110 kB)]
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Theory of Andreev reflection in a junction with a strongly disordered semiconductor
I. L. Aleiner, Penny Clarke, and L. I. Glazman
pp. R7630-R7633 [View PDF (102 kB)]
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Nonequilibrium optical-phonon population by sequential resonant tunneling in GaAs-AlAs superlattices
S. H. Kwok, M. Ramsteiner, D. Bertram, M. Asche, H. T. Grahn, and K. Ploog
pp. R7634-R7637 [View PDF (80 kB)]
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Instability of the disordered critical points of Dirac fermions
Claudio de C. Chamon, Christopher Mudry, and Xiao-Gang Wen
pp. R7638-R7641 [View PDF (138 kB)]
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Photoluminescence decay times in strong-coupling semiconductor microcavities
F. Tassone, C. Piermarocchi, V. Savona, A. Quattropani, and P. Schwendimann
pp. R7642-R7645 [View PDF (98 kB)]

Surface physics, low-dimensional systems, and related topics

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Influence of island mobility on island size distributions in surface growth
Laurens Kuipers and Richard E. Palmer
pp. R7646-R7649 [View PDF (63 kB)]
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Negative-electron-affinity effect on the surface of chemical-vapor-deposited diamond polycrystalline films
I. L. Krainsky, V. M. Asnin, G. T. Mearini, and J. A. Dayton, Jr.
pp. R7650-R7653 [View PDF (81 kB)]
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One-dimensional commensurate-incommensurate transition: Bromide on the Au(100) electrode
B. M. Ocko, O. M. Magnussen, J. X. Wang, and Th. Wandlowski
pp. R7654-R7657 [View PDF (114 kB)]

ARTICLES

Electronic structure: wide-band, narrow-band, and strongly correlated systems

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Magnetoconductance anisotropy and interference effects in variable-range hopping
Ernesto Medina, Mehran Kardar, and Rafael Rangel
pp. 7663-7672 [View PDF (215 kB)]
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Photoemission study of itinerant ferromagnet Cr1-δTe
K. Shimada, T. Saitoh, H. Namatame, A. Fujimori, S. Ishida, S. Asano, M. Matoba, and S. Anzai
pp. 7673-7683 [View PDF (258 kB)]
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Ab initio electric-field gradients and electron densities at 27Al, 57Fe, and 67Zn in the spinels ZnAl2O4 and ZnFe2O4
D. W. Mitchell, T. P. Das, W. Potzel, W. Schiessl, H. Karzel, M. Steiner, M. Köfferlein, U. Hiller, G. M. Kalvius, A. Martin, W. Schäfer, G. Will, I. Halevy, and J. Gal
pp. 7684-7698 [View PDF (217 kB)]
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Time-dependent specific heat below 1 K in the spin-density-wave state of (TMTSF)2PF6
J. C. Lasjaunias, K. Biljaković, and P. Monceau
pp. 7699-7703 [View PDF (119 kB)]
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Singularity of the density of states in the two-dimensional Hubbard model from finite-size scaling of Yang-Lee zeros
E. Abraham, I. M. Barbour, P. H. Cullen, E. G. Klepfish, E. R. Pike, and Sarben Sarkar
pp. 7704-7713 [View PDF (209 kB)]
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Compton-scattering study of the electronic properties of the transition-metal alloys FeAl, CoAl, and NiAl
S. Manninen, V. Honkimäki, K. Hämäläinen, J. Laukkanen, C. Blaas, J. Redinger, J. McCarthy, and P. Suortti
pp. 7714-7720 [View PDF (223 kB)]
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Manipulation of the spin-orbit coupling using the Dirac equation for spin-dependent potentials
H. Ebert, H. Freyer, A. Vernes, and G.-Y. Guo
pp. 7721-7726 [View PDF (140 kB)]
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Ab initio pseudopotentials for interacting atoms
Jiří Vackář, Antonín Šimůnek, and Raimund Podloucky
pp. 7727-7730 [View PDF (100 kB)]
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Interstitial-oxygen-atom diffusion in MgO
T. Brudevoll, E. A. Kotomin, and N. E. Christensen
pp. 7731-7735 [View PDF (149 kB)]

Semiconductors I: bulk

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Behavior of silicon-, sulfur-, and tellurium-related DX centers in liquid-phase-epitaxy and vapor-phase-epitaxy GaAs1-xPx alloys
E. Calleja, F. J. Sanchez, E. Muñoz, E. Vigil, F. Omnès, P. Gibart, J. M. Martin, and G. Gonzalez Díez
pp. 7736-7741 [View PDF (117 kB)]
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Mechanism and kinetics of the ion-assisted nucleation in amorphous silicon
Corrado Spinella, Salvatore Lombardo, Francesco Priolo, and S. Ugo Campisano
pp. 7742-7749 [View PDF (869 kB)]
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Hydrogen migration in polycrystalline silicon
N. H. Nickel, W. B. Jackson, and J. Walker
pp. 7750-7761 [View PDF (419 kB)]
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Photoemission study of amorphous carbon modifications and comparison with calculated densities of states
J. Schäfer, J. Ristein, R. Graupner, L. Ley, U. Stephan, Th. Frauenheim, V. S. Veerasamy, G. A. J. Amaratunga, M. Weiler, and H. Ehrhardt
pp. 7762-7774 [View PDF (239 kB)]
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Lattice properties of strained GaAs, Si, and Ge using a modified bond-charge model
Resul Eryiğit and Irving P. Herman
pp. 7775-7784 [View PDF (195 kB)]
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Transport analysis of the thermalization and energy relaxation of photoexcited hot electrons in Ge-doped GaAs
P. Supancic, U. Hohenester, P. Kocevar, D. Snoke, R. M. Hannak, and W. W. Rühle
pp. 7785-7791 [View PDF (143 kB)]
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Optical-absorption spectrum near the exciton band edge in CuGaS2 at 5 K
C. Bellabarba, J. González, and C. Rincón
pp. 7792-7796 [View PDF (122 kB)]
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Evidence for correlated hole distribution in neutron-transmutation-doped isotopically controlled germanium
K. M. Itoh, J. Muto, W. Walukiewicz, J. W. Beeman, E. E. Haller, Hyunjung Kim, A. J. Mayur, M. Dean Sciacca, A. K. Ramdas, R. Buczko, J. W. Farmer, and V. I. Ozhogin
pp. 7797-7804 [View PDF (154 kB)]
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Model and results for a deep level with two different configurations in Hg0.3Cd0.7Te
M. Koehler, E. F. Ferrari, J. F. Barbot, and I. A. Hümmelgen
pp. 7805-7809 [View PDF (124 kB)]
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Lifetimes of positrons trapped at Si vacancies
Mineo Saito and Atsushi Oshiyama
pp. 7810-7814 [View PDF (87 kB)]
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Hot-carrier energy-loss rates in alloy semiconductors
S. S. Prabhu and A. S. Vengurlekar
pp. 7815-7818 [View PDF (98 kB)]
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Energy barrier to reorientation of the substitutional nitrogen in diamond
S. J. Breuer and P. R. Briddon
pp. 7819-7822 [View PDF (69 kB)]
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Point defects and their reactions in e--irradiated GaAs investigated by x-ray-diffraction methods
A. Pillukat, K. Karsten, and P. Ehrhart
pp. 7823-7835 [View PDF (250 kB)]

Semiconductors II: surfaces, interfaces, microstructures, and related topics

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Dopant and carrier concentration in Si in equilibrium with monoclinic SiP precipitates
S. Solmi, A. Parisini, R. Angelucci, A. Armigliato, D. Nobili, and L. Moro
pp. 7836-7841 [View PDF (673 kB)]
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Multiple-channel resonant tunneling in a tunneling junction with an impurity cluster
Xiaoshuang Chen, Jijun Zhao, and Guanghou Wang
pp. 7842-7846 [View PDF (119 kB)]
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Role of structural saturation and geometry in the luminescence of silicon-based nanostructured materials
R. Q. Zhang, J. Costa, and E. Bertran
pp. 7847-7850 [View PDF (89 kB)]
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Donor levels and the microscopic structure of the DX center in n-type Si-doped AlxGa0.51-xIn0.49P grown by molecular-beam epitaxy
J. Mäkinen, T. Laine, J. Partanen, K. Saarinen, P. Hautojärvi, K. Tappura, T. Hakkarainen, H. Asonen, M. Pessa, J. P. Kauppinen, K. Vänttinen, M. A. Paalanen, and J. Likonen
pp. 7851-7862 [View PDF (200 kB)]
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Kink-induced buckled dimers on Si(001) and Ge(001) at room temperature studied by scanning tunneling microscopy
Hiroshi Tochihara, Tomoshige Sato, Takashi Sueyoshi, Takaaki Amakusa, and Masashi Iwatsuki
pp. 7863-7867 [View PDF (361 kB)]
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Absolute transmission, reflection, and absorption studies in GaAs/AlAs quantum wells containing a photoexcited electron gas
R. Harel, E. Cohen, E. Linder, Arza Ron, and L. N. Pfeiffer
pp. 7868-7875 [View PDF (199 kB)]
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Surface roughening during low-temperature Si epitaxial growth on singular vs vicinal Si(001) substrates
N.-E. Lee, David G. Cahill, and J. E. Greene
pp. 7876-7879 [View PDF (240 kB)]
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Reconstruction-dependent electron-hole recombination on GaAs(001) surfaces studied by using near-surface quantum wells
Hiroshi Yamaguchi, Kiyoshi Kanisawa, and Yoshiji Horikoshi
pp. 7880-7883 [View PDF (126 kB)]
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Resonant-mode conversion and transmission of phonons in superlattices
Hatsuyoshi Kato, Humphrey J. Maris, and Shin-ichiro Tamura
pp. 7884-7889 [View PDF (119 kB)]
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X-ray scattering in disordered superlattices: Theory and application to FeF2/ZnF2 superlattices
C. A. Ramos, M. O. Cáceres, and David Lederman
pp. 7890-7898 [View PDF (187 kB)]
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Single-electron tunneling through a double quantum dot: The artificial molecule
R. H. Blick, R. J. Haug, J. Weis, D. Pfannkuche, K. v. Klitzing, and K. Eberl
pp. 7899-7902 [View PDF (140 kB)]
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Intersubband resonances in InAs/AlSb quantum wells: Selection rules, matrix elements, and the depolarization field
R. J. Warburton, C. Gauer, A. Wixforth, J. P. Kotthaus, B. Brar, and H. Kroemer
pp. 7903-7910 [View PDF (182 kB)]
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Temperature and density dependence of the electron Landé g factor in semiconductors
M. Oestreich, S. Hallstein, A. P. Heberle, K. Eberl, E. Bauser, and W. W. Rühle
pp. 7911-7916 [View PDF (119 kB)]
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Atomic and electronic structures of oxygen-adsorbed Si(001) surfaces
Toshihiro Uchiyama and Masaru Tsukada
pp. 7917-7922 [View PDF (180 kB)]
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Static and dynamic properties of coupled electron-electron and electron-hole layers
Lerwen Liu, L. Świerkowski, D. Neilson, and J. Szymański
pp. 7923-7931 [View PDF (267 kB)]
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Crossover in tunneling hops in systems of strongly localized electrons
V. Lien Nguyen and Arturo D. Gamietea
pp. 7932-7936 [View PDF (160 kB)]
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Hopping conduction in semiconductor superlattices in a quantized magnetic field
Nguyen Hong Shon and H. N. Nazareno
pp. 7937-7944 [View PDF (192 kB)]
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Photoluminescence studies of current-induced nonequilibrium states in magnetically quantized two-dimensional electron gases
N. N. Zinov’ev, A. V. Andrianov, L. J. Challis, C. T. Foxon, and J. J. Harris
pp. 7945-7948 [View PDF (99 kB)]
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Successes and failures of the k⋅p method: A direct assessment for GaAs/AlAs quantum structures
D. M. Wood and Alex Zunger
pp. 7949-7963 [View PDF (424 kB)]
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Coulomb drag of edge excitations in the Chern-Simons theory of the fractional quantum Hall effect
Dror Orgad and Shimon Levit
pp. 7964-7969 [View PDF (154 kB)]
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Time-resolved transport between resonantly coupled Landau levels in semiconductor superlattices
F. Claro, J. F. Weisz, W. Müller, K. v. Klitzing, H. T. Grahn, and K. Ploog
pp. 7970-7974 [View PDF (111 kB)]
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Coherent magnetotransport in confined arrays of antidots. I. Dispersion relations and current densities
I. V. Zozoulenko, Frank A. Maao/, and E. H. Hauge
pp. 7975-7986 [View PDF (499 kB)]
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Coherent magnetotransport in confined arrays of antidots. II. Two-terminal conductance
I. V. Zozoulenko, Frank A. Maao/, and E. H. Hauge
pp. 7987-7995 [View PDF (278 kB)]
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Structure determination of a Sb monolayer on Ge(111) from first-principles calculations
Noboru Takeuchi
pp. 7996-8000 [View Page Images or PDF (819 kB)]

Surface physics, low-dimensional systems, and related topics

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Growth of Co on a stepped and on a flat Cu(001) surface
U. Ramsperger, A. Vaterlaus, P. Pfäffli, U. Maier, and D. Pescia
pp. 8001-8006 [View PDF (617 kB)]
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Molecular-dynamics investigation of early film growth of Pt/Au(100) and Au/Pt(100) and an interdiffusive growth mode
Michael I. Haftel, Mervine Rosen, Tameika Franklin, and Matthew Hettermann
pp. 8007-8014 [View PDF (231 kB)]
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Density-functional periodic study of the adsorption of hydrogen on a palladium (111) surface
J.-F. Paul and P. Sautet
pp. 8015-8027 [View PDF (259 kB)]
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Electronic structure of small copper oxide clusters: From Cu2O to Cu2O4
Lai-Sheng Wang, Hongbin Wu, Sunil R. Desai, and Liang Lou
pp. 8028-8031 [View PDF (79 kB)]
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Angle-resolved photoemission study of SrTiO3 (100) and (110) surfaces
Y. Haruyama, S. Kodaira, Y. Aiura, H. Bando, Y. Nishihara, T. Maruyama, Y. Sakisaka, and H. Kato
pp. 8032-8035 [View PDF (122 kB)]
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Atomic-structure determination of diamond using Auger-electron diffraction
F. Yue, R. S. Swineford, and D. P. Pappas
pp. 8036-8041 [View PDF (237 kB)]
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Exciton-induced lattice relaxation and the electronic and vibrational spectra of silicon clusters
Jakyoung Song, Sergio E. Ulloa, and David A. Drabold
pp. 8042-8051 [View PDF (286 kB)]
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Embedding approach to the isolated adsorbate
M. I. Trioni, G. P. Brivio, S. Crampin, and J. E. Inglesfield
pp. 8052-8064 [View PDF (238 kB)]
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Identification of electrostatic and van der Waals interaction forces between a micrometer-size sphere and a flat substrate
B. Gady, D. Schleef, R. Reifenberger, D. Rimai, and L. P. DeMejo
pp. 8065-8070 [View PDF (128 kB)]
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Kinetic roughening of surfaces: Derivation, solution, and application of linear growth equations
S. Majaniemi, T. Ala-Nissila, and J. Krug
pp. 8071-8082 [View PDF (335 kB)]
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Interaction of Rydberg atoms with a metal surface in the presence of an external electric field
P. Nordlander and F. B. Dunning
pp. 8083-8089 [View PDF (218 kB)]
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Photoelectrical properties of semiconductor tips in scanning tunneling microscopy
M. W. J. Prins, R. Jansen, R. H. M. Groeneveld, A. P. van Gelder, and H. van Kempen
pp. 8090-8104 [View PDF (255 kB)]
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Spin-polarized tunneling with GaAs tips in scanning tunneling microscopy
M. W. J. Prins, R. Jansen, and H. van Kempen
pp. 8105-8113 [View PDF (157 kB)]
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Strain-induced growth-mode transition of V in epitaxial Mo/V(001) superlattices
J. Birch, L. Hultman, J.-E. Sundgren, and G. Radnoczi
pp. 8114-8123 [View PDF (1,067 kB)]
 
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