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PROLA » Phys. Rev. B » Volume 53 » Issue 19
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Physical Review B – 15 May 1996
Volume 53, Issue 19

BRIEF REPORTS

Electronic structure: wide-band, narrow-band, and strongly correlated systems

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Decay of the self-trapped exciton and Frenkel-pair formation in NaF: An ab initio study
K. S. Song
pp. 12537-12540 [View PDF (67 kB)]
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Photodissociation dynamics of gas-phase C60 probed by optical emission spectroscopy
P. Heszler, J. O. Carlsson, and P. Demirev
pp. 12541-12544 [View PDF (112 kB)]
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Effect of pressure on the optical-absorption edges of CsGeBr3 and CsGeCl3
U. Schwarz, F. Wagner, K. Syassen, and H. Hillebrecht
pp. 12545-12548 [View PDF (95 kB)]
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Band-structure parameters by genetic algorithm
F. Starrost, S. Bornholdt, C. Solterbeck, and W. Schattke
pp. 12549-12552 [View PDF (96 kB)]
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Peierls instability of a one-dimensional quantum liquid
Eugene B. Kolomeisky and Joseph P. Straley
pp. 12553-12555 [View PDF (122 kB)]
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Representation of the t-J model using decoupled spin and charge variables
J. Loos
pp. 12556-12558 [View PDF (117 kB)]
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Kondo hole behavior in Ce0.97 La0.03Pd3
J. M. Lawrence, T. Graf, M. F. Hundley, D. Mandrus, J. D. Thompson, A. Lacerda, M. S. Torikachvili, J. L. Sarrao, and Z. Fisk
pp. 12559-12562 [View PDF (100 kB)]
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Nb4N3: Polymorphism in crystalline niobium nitrides
E. C. Ethridge, S. C. Erwin, and W. E. Pickett
pp. 12563-12565 [View PDF (103 kB)]

Semiconductors I: bulk

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Ammonia as an active doping source gas of hydrogenated amorphous germanium films
I. Chambouleyron and R. Campomanes
pp. 12566-12569 [View PDF (67 kB)]
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Electron paramagnetic resonance of a Au-Au pair in heat-treated silicon
P. M. Williams, P. W. Mason, and G. D. Watkins
pp. 12570-12573 [View PDF (142 kB)]
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Finite-size effects in the exciton-phonon coupled system
H. Kishida, N. Nagaosa, and Y. Tokura
pp. 12574-12576 [View PDF (103 kB)]
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Superexchange and spin-glass formation in semimagnetic semiconductors
Tomasz M. Rusin
pp. 12577-12580 [View PDF (117 kB)]
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Intraband inversion due to ultrashort carrier lifetimes in proton-bombarded InP
R. A. Höpfel, Ch. Teissl, K. F. Lamprecht, and L. Rota
pp. 12581-12584 [View PDF (93 kB)]

Semiconductors II: surfaces, interfaces, microstructures, and related topics

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Real-space investigation of initial growth process of hydrogenated amorphous silicon on a graphite substrate
Mitsutaka Matsuse, Seiji Tsuboi, Masashi Kawasaki, Hideomi Koinuma, Masaaki Eguchi, and Hironobu Sakata
pp. 12585-12588 [View PDF (228 kB)]
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Atomic geometry and bonding on the GaAs(001)-β2(2×4) surface from ab initio pseudopotential calculations
G. P. Srivastava and S. J. Jenkins
pp. 12589-12592 [View PDF (280 kB)]
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Shakeup processes in the recombination spectra of negatively charged excitons
Gleb Finkelstein, Hadas Shtrikman, and Israel Bar-Joseph
pp. 12593-12596 [View PDF (78 kB)]
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Localization and mesoscopic persistent current in a disordered metal ring
Zhong-Shui Ma, Hua-Zhong Li, and Shi-Liang Zhu
pp. 12597-12600 [View PDF (115 kB)]
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Gor’kov and Eliashberg linear-response theory: Rigorous derivation and limits of applicability
Ya. M. Blanter and A. D. Mirlin
pp. 12601-12604 [View PDF (113 kB)]
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Adatom-adatom and adatom-surface interactions: Islands and chains of Cl on GaAs(110)
Jennifer L. Corkill and James R. Chelikowsky
pp. 12605-12608 [View PDF (96 kB)]
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Electronic structure of a buried NiSi2 or CoSi2 layer in bulk Si
J. T. Schick and S. M. Bose
pp. 12609-12612 [View PDF (85 kB)]
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Magic numbers and optical-absorption spectrum in vertically coupled quantum dots in the fractional quantum Hall regime
Hiroshi Imamura, Peter A. Maksym, and Hideo Aoki
pp. 12613-12616 [View PDF (121 kB)]
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Magnetoplasmons in a ring-shaped two-dimensional electron gas
F. A. Reboredo and C. R. Proetto
pp. 12617-12620 [View PDF (144 kB)]
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Coulomb charging at large conduction
Xiaohui Wang and Hermann Grabert
pp. 12621-12624 [View PDF (107 kB)]
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Influence of energy level alignment on tunneling between coupled quantum dots
D. Dixon, L. P. Kouwenhoven, P. L. McEuen, Y. Nagamune, J. Motohisa, and H. Sakaki
pp. 12625-12628 [View PDF (2,780 kB)]
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Size-dependent two-photon excitation spectroscopy of CdSe nanocrystals
Mark E. Schmidt, Sean A. Blanton, Margaret A. Hines, and Philippe Guyot-Sionnest
pp. 12629-12632 [View PDF (118 kB)]
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L-band recombination in InxGa1-xP/In0.5Al0.5P multiple quantum wells
D. Patel, K. Interholzinger, P. Thiagarajan, G. Y. Robinson, and C. S. Menoni
pp. 12633-12636 [View PDF (83 kB)]
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Femtosecond study of exciton tunneling in (Zn,Cd)Se/ZnSe asymmetric double quantum wells
S. Ten, F. Henneberger, M. Rabe, and N. Peyghambarian
pp. 12637-12640 [View PDF (126 kB)]

Surface physics, low-dimensional systems, and related topics

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Comparison of bond character in hydrocarbons and fullerenes
D. W. Snoke, M. Cardona, S. Sanguinetti, and G. Benedek
pp. 12641-12642 [View PDF (74 kB)]
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Interlayer interactions in LiC6: Compressibility and thermal expansion
Ping Zhou and John E. Fischer
pp. 12643-12646 [View PDF (97 kB)]
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Heat capacity of thin films of 3He adsorbed on a heterogeneous substrate
Andrei Golov and Frank Pobell
pp. 12647-12650 [View PDF (85 kB)]
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Low-temperature reconstruction pathway to the Si(111)(√3×√3)R30°-Ag interface
J. M. Carpinelli and H. H. Weitering
pp. 12651-12654 [View PDF (215 kB)]
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Enhanced photon stimulated ion-desorption yields from chemisorbed molecules through bond-selective core-electron excitation
Hiromi Ikeura Sekiguchi, Tetsuhiro Sekiguchi, and Kenichiro Tanaka
pp. 12655-12658 [View PDF (80 kB)]
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Surface-enhanced Raman scattering at elevated temperatures
P. T. Leung, M. H. Hider, and E. J. Sanchez
pp. 12659-12662 [View PDF (100 kB)]
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Anisotropic second-harmonic generation of electric quadrupolar origin in copper phthalocyanine films epitaxially grown by molecular-beam epitaxy
Hajime Hoshi, Toshiki Yamada, Ken Ishikawa, Hideo Takezoe, and Atsuo Fukuda
pp. 12663-12665 [View PDF (98 kB)]

ARTICLES

Electronic structure: wide-band, narrow-band, and strongly correlated systems

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Weighted-density approximation in metals and semiconductors
J. P. A. Charlesworth
pp. 12666-12673 [View PDF (212 kB)]
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Photon focusing, internal diffraction, and surface states in periodic dielectric structures
P. Etchegoin and R. T. Phillips
pp. 12674-12683 [View PDF (250 kB)]
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Electronic structure and chemical-bonding mechanism of Cu3N, Cui3NPd, and related Cu(I) compounds
U. Hahn and W. Weber
pp. 12684-12693 [View PDF (293 kB)]
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Bond-order potentials: Theory and implementation
A. P. Horsfield, A. M. Bratkovsky, M. Fearn, D. G. Pettifor, and M. Aoki
pp. 12694-12712 [View PDF (374 kB)]
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Structure of solid-state systems from embedded-cluster calculations: A divide-and-conquer approach
Tianhai Zhu, Wei Pan, and Weitao Yang
pp. 12713-12724 [View PDF (214 kB)]
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Extended Hückel tight-binding study of the effect of pressure and uniaxial stress on the electronic structure of α-(BEDT-TTF)2KHg(SCN)4 and κ-(BEDT-TTF)2Cu(NCS)2
C. E. Campos, P. S. Sandhu, J. S. Brooks, and T. Ziman
pp. 12725-12732 [View PDF (144 kB)]
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Linear-scaling tight binding from a truncated-moment approach
A. F. Voter, J. D. Kress, and R. N. Silver
pp. 12733-12741 [View PDF (192 kB)]
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Orbital and spin orderings in YVO3 and LaVO3 in the generalized gradient approximation
Hideaki Sawada, Noriaki Hamada, Kiyoyuki Terakura, and Toshio Asada
pp. 12742-12749 [View PDF (208 kB)]
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Nonmetal-metal transition in metal–molten-salt solutions
Pier Luigi Silvestrelli, Ali Alavi, Michele Parrinello, and Daan Frenkel
pp. 12750-12760 [View PDF (355 kB)]
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Nonrelativistic fermions coupled to transverse gauge fields: The single-particle Green’s function in arbitrary dimensions
Peter Kopietz
pp. 12761-12768 [View PDF (212 kB)]
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Electronic properties of the narrow-band material α-RuCl3
I. Pollini
pp. 12769-12776 [View PDF (172 kB)]
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Microwave absorption in insulating dielectric ionic crystals including the role of point defects
Binshen Meng, Benjamin D. B. Klein, John H. Booske, and Reid F. Cooper
pp. 12777-12785 [View PDF (185 kB)]
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Theory of nonlinear optical response of excitons in solid C60
R. Eder, A.-M. Janner, and G. A. Sawatzky
pp. 12786-12793 [View PDF (196 kB)]
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Resonant magnetoabsorption of millimeter-wave radiation in the quasi-two-dimensional organic metals α-(BEDT-TTF)2MHg(SCN)4 (M=K,Tl)
S. V. Demishev, A. V. Semeno, N. E. Sluchanko, N. A. Samarin, I. B. Voskoboinikov, V. V. Glushkov, J. Singleton, S. J. Blundell, S. O. Hill, W. Hayes, M. V. Kartsovnik, A. E. Kovalev, M. Kurmoo, P. Day, and N. D. Kushch
pp. 12794-12803 [View PDF (204 kB)]
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Finite-size effects and unsaturated ferromagnetism of two-component Hubbard rings in a strong magnetic field: Exact results
A. N. Kocharian and Joel H. Sebold
pp. 12804-12812 [View PDF (207 kB)]

Semiconductors I: bulk

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Five-level k⋅p model for the conduction and valence bands of GaAs and InP
P. Pfeffer and W. Zawadzki
pp. 12813-12828 [View PDF (336 kB)]
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Energy states of Be in GaAs
R. A. Lewis, T. S. Cheng, M. Henini, and J. M. Chamberlain
pp. 12829-12834 [View PDF (112 kB)]
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Hydrogen passivation of shallow donors S, Se, and Te in GaAs
J. Vetterhöffer and J. Weber
pp. 12835-12844 [View PDF (417 kB)]
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Possibility of a metastable state for a transition-metal impurity in semiconductor
P. Dahan and V. Fleurov
pp. 12845-12854 [View PDF (196 kB)]
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Generalized Monte Carlo approach for the study of the coherent ultrafast carrier dynamics in photoexcited semiconductors
Stefan Haas, Fausto Rossi, and Tilmann Kuhn
pp. 12855-12868 [View PDF (581 kB)]
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Screening and energy loss by hot carriers in semiconductors
Walter A. Harrison
pp. 12869-12877 [View PDF (176 kB)]
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Host-isotope fine structure of local and gap modes of substitutional impurities in zinc-blende and wurtzite II-VI semiconductors
M. Dean Sciacca, A. J. Mayur, Hyunjung Kim, I. Miotkowski, A. K. Ramdas, and S. Rodriguez
pp. 12878-12883 [View PDF (160 kB)]
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Local and gap modes of substitutional 3d transition-metal ions in zinc-blende and wurtzite II-VI semiconductors
A. J. Mayur, M. Dean Sciacca, Hyunjung Kim, I. Miotkowski, A. K. Ramdas, S. Rodriguez, and G. C. La Rocca
pp. 12884-12888 [View PDF (106 kB)]
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Effect of negative differential conductivity in a driven diffusive lattice gas
Christian Maes and Wim Vanderpoorten
pp. 12889-12895 [View PDF (230 kB)]
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Low-temperature transport properties of NdBiPt
Donald T. Morelli, Paul C. Canfield, and Phoebus Drymiotis
pp. 12896-12901 [View PDF (123 kB)]

Semiconductors II: surfaces, interfaces, microstructures, and related topics

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Scanning tunneling microscopy study of Si growth on a Si(111)√3×√3-B surface
A. V. Zotov, M. A. Kulakov, B. Bullemer, and I. Eisele
pp. 12902-12906 [View PDF (659 kB)]
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Dynamic growth steps of n×n dimer–adatom–stacking-fault domains on the quenched Si(111) surface
K. Kumamoto, T. Hoshino, K. Kokubun, T. Ishimaru, and I. Ohdomari
pp. 12907-12911 [View PDF (10,148 kB)]
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Interband transitions in AlxGa1-xAs/AlAs quantum-well structures
S. T. Lee, J. Haetty, A. Petrou, Pawel Hawrylak, M. Dutta, J. Pamulapati, P. G. Newman, and M. Taysing-Lara
pp. 12912-12916 [View PDF (96 kB)]
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Landau levels and persistent currents in nonuniform magnetic fields
Chang Sub Kim and Oleg Olendski
pp. 12917-12928 [View PDF (248 kB)]
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Quasi-two-dimensional electron gas: Exchange and correlation energies
O. Betbeder-Matibet, M. Combescot, and C. Tanguy
pp. 12929-12937 [View PDF (212 kB)]
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Impurity center in a single quantum well in the presence of a strong magnetic field
B. S. Monozon, C. A. Bates, J. L. Dunn, and M. J. Pye
pp. 12938-12947 [View PDF (247 kB)]
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Observation of interface states by high-resolution electron-energy-loss spectroscopy in metal-GaAs(110) junctions
F. Arciprete, S. Colonna, M. Fanfoni, F. Patella, and A. Balzarotti
pp. 12948-12955 [View PDF (198 kB)]
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Coulomb blockade in a quantum dot coupled strongly to a lead
Hangmo Yi and C. L. Kane
pp. 12956-12966 [View PDF (329 kB)]
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Self-consistent calculation of resonant tunneling in asymmetric double barriers in a magnetic field
P. Orellana, F. Claro, E. Anda, and S. Makler
pp. 12967-12972 [View PDF (126 kB)]
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Statistics of skyrmions in quantum Hall systems
Jacek Dziarmaga
pp. 12973-12978 [View PDF (150 kB)]
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Intrasubband excitations of composite fermions in a quantum wire
Seiya Kumada, Sei-ichiro Suga, and Ayao Okiji
pp. 12979-12984 [View PDF (180 kB)]
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Radiative recombination in cylindrical GaAs-(Ga,Al)As quantum-well wires under quasistationary excitation conditions
S. T. Pérez-Merchancano, M. de Dios-Leyva, and L. E. Oliveira
pp. 12985-12989 [View PDF (134 kB)]
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Quantum transport theory of Weiss oscillations quenching of a two-dimensional electron gas in a strong periodic potential
Q. W. Shi and K. Y. Szeto
pp. 12990-12993 [View PDF (129 kB)]
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Raman scattering in single-variant spontaneously ordered GaInP2
F. Alsina, N. Mestres, J. Pascual, C. Geng, P. Ernst, and F. Scholz
pp. 12994-13001 [View PDF (174 kB)]
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Photoluminescence due to positively charged excitons in undoped GaAs/AlxGa1-xAs quantum wells
J. L. Osborne, A. J. Shields, M. Pepper, F. M. Bolton, and D. A. Ritchie
pp. 13002-13010 [View PDF (166 kB)]
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Spectroscopic investigations of photoinduced changes of the spatial distribution of charge carriers in modulation-doped quantum-well structures
R. Hartmann, J. Kraus, G. Schaack, and K. Panzlaff
pp. 13011-13015 [View PDF (91 kB)]
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Classical continuum theory of the dipole-forbidden collective excitations in quantum strips
W. L. Schaich, M. R. Geller, and G. Vignale
pp. 13016-13023 [View PDF (200 kB)]
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Random matrix theory and mesoscopic fluctuations
P. Šeba
pp. 13024-13028 [View PDF (148 kB)]
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Finite-difference method for the calculation of low-energy positron diffraction
Y. Joly
pp. 13029-13037 [View PDF (309 kB)]
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X-ray photoelectron-diffraction analysis of oxygen chemisorption on the GaAs(110) surface
D. H. Lee, J. Chung, and S.-J. Oh
pp. 13038-13046 [View PDF (178 kB)]
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Oxygen-related defects in Si studied by variable-energy positron annihilation spectroscopy
M. Fujinami
pp. 13047-13050 [View PDF (133 kB)]
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Theory of polariton photoluminescence in arbitrary semiconductor microcavity structures
V. Savona, F. Tassone, C. Piermarocchi, A. Quattropani, and P. Schwendimann
pp. 13051-13062 [View PDF (264 kB)]
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Length dependence of quantized conductance in ballistic constrictions fabricated on InAs/AlSb quantum wells
S. J. Koester, B. Brar, C. R. Bolognesi, E. J. Caine, A. Patlach, E. L. Hu, H. Kroemer, and M. J. Rooks
pp. 13063-13073 [View PDF (389 kB)]
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Electronic transport in nanoscale contacts with rough boundaries
A. M. Bratkovsky and S. N. Rashkeev
pp. 13074-13085 [View PDF (260 kB)]
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Quantum conductance fluctuations in the large-size-scale regime
C. A. Richter, D. G. Seiler, and J. G. Pellegrino
pp. 13086-13090 [View PDF (131 kB)]
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Supercurrent states in one-dimensional finite-size rings
Vladimir A. Kashurnikov, Alexei I. Podlivaev, Nikolai V. Prokof’ev, and Boris V. Svistunov
pp. 13091-13105 [View PDF (290 kB)]

Surface physics, low-dimensional systems, and related topics

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Empirical bond polarizability model for fullerenes
S. Guha, J. Menéndez, J. B. Page, and G. B. Adams
pp. 13106-13114 [View PDF (200 kB)]
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Adsorption geometry of OH adsorbed at F centers on a NaCl(100) surface
U. Malaske, H. Pfnür, M. Bässler, M. Weiss, and E. Umbach
pp. 13115-13120 [View PDF (176 kB)]
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First-principles calculations of β-SiC(001) surfaces
M. Sabisch, P. Krüger, A. Mazur, M. Rohlfing, and J. Pollmann
pp. 13121-13132 [View PDF (299 kB)]
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Persistent quantum-size effect in aluminum films up to twelve atoms thick
J. C. Boettger
pp. 13133-13137 [View PDF (77 kB)]
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Anisotropic optical response of the diamond (111)-2×1 surface
Cecilia Noguez and Sergio E. Ulloa
pp. 13138-13145 [View PDF (183 kB)]
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Dynamics of surface alloying: Determination of diffusion barriers from photoelectron spectra
F. Patthey, C. Massobrio, and W.-D. Schneider
pp. 13146-13149 [View PDF (120 kB)]
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Formation of C60 dimers: A theoretical study of electronic structure and optical absorption
Jan Fagerström and Sven Stafström
pp. 13150-13158 [View PDF (174 kB)]
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Computation of electrostatic fields in low-symmetry systems: Application to STM configurations
Michel Devel, Christian Girard, and Christian Joachim
pp. 13159-13168 [View PDF (472 kB)]
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Disordered flat phase and phase diagram for restricted solid-on-solid models of fcc (110) surfaces
Giuseppe Santoro, Michele Vendruscolo, Santi Prestipino, and Erio Tosatti
pp. 13169-13186 [View PDF (400 kB)]

COMMENTS

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Comment on ‘‘Hopping transport in a magnetic field: Kadanoff-Baym-Keldysh approach and magnetoconductivity’’
H. Overhof and P. Thomas
pp. 13187-13189 [View PDF (80 kB)]
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Reply to ‘‘Comment on ‘Hopping transport in a magnetic field: Kadanoff-Baym-Keldysh approach and magnetoconductivity’ ’’
O. Bleibaum, H. Böttger, and V. V. Bryksin
pp. 13190-13192 [View PDF (90 kB)]

ERRATA

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Erratum: Dominant density parameters and local pseudopotentials for simple metals
Carlos Fiolhais, John P. Perdew, Sean Q. Armster, James M. MacLaren, and Marta Brajczewska
pp. 13193 [View PDF (50 kB)]
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Erratum: In-plane dispersion relations of InAs/AlSb/GaSb/AlSb/InAs interband resonant-tunneling diodes
J. Genoe, K. Fobelets, C. Van Hoof, and G. Borghs
pp. 13194 [View PDF (50 kB)]
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Erratum: Coarsening and slope evolution during unstable epitaxial growth
Pavel Smilauer and Dimitri D. Vvedensky
pp. 13194 [View PDF (50 kB)]
 
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