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PROLA » Phys. Rev. B » Volume 53 » Issue 8
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Physical Review B – 15 February 1996
Volume 53, Issue 8

RAPID COMMUNICATIONS

Electronic structure: wide-band, narrow-band, and strongly correlated systems

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Observation of Zeeman splitting in universal conductance fluctuations
J. S. Moon, Norman O. Birge, and Brage Golding
pp. R4193-R4196 [View PDF (110 kB)]
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Strongly interacting model for antiferromagnetism in one-dimensional C60 polymers: A C60
Kikuo Harigaya
pp. R4197-R4200 [View PDF (89 kB)]
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Self-energy correction to unrestricted Hartree-Fock solutions of lattice models for 3d transition-metal oxides
T. Mizokawa and A. Fujimori
pp. R4201-R4204 [View PDF (91 kB)]

Semiconductors I: bulk

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Excitonic exchange splitting and Stokes shift in Si nanocrystals and Si clusters
Toshihide Takagahara and Kyozaburo Takeda
pp. R4205-R4208 [View PDF (81 kB)]

Semiconductors II: surfaces, interfaces, microstructures, and related topics

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Ab initio prediction of GaN (101̅ 0) and (110) anomalous surface relaxation
John E. Jaffe, Ravindra Pandey, and Peter Zapol
pp. R4209-R4212 [View PDF (99 kB)]
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Self-aggregation of quantum dots for very thin InAs layers grown on GaAs
A. Polimeni, A. Patanè, M. Capizzi, F. Martelli, L. Nasi, and G. Salviati
pp. R4213-R4216 [View PDF (118 kB)]
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Observation of ballistic transport in the upper subband of a two-dimensional electron system
J. P. Lu and M. Shayegan
pp. R4217-R4220 [View PDF (860 kB)]
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Magnetic-field dependence of the level spacing of a small electron droplet
O. Klein, D. Goldhaber-Gordon, C. de C. Chamon, and M. A. Kastner
pp. R4221-R4224 [View PDF (115 kB)]
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Dynamics of electron capture into quantum wires
J. F. Ryan, A. C. Maciel, C. Kiener, L. Rota, K. Turner, J. M. Freyland, U. Marti, D. Martin, F. Morier-Gemoud, and F. K. Reinhart
pp. R4225-R4228 [View PDF (184 kB)]
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Optical anisotropy in 5-nm-scale T-shaped quantum wires fabricated by the cleaved-edge overgrowth method
Hidefumi Akiyama, Takao Someya, and Hiroyuki Sakaki
pp. R4229-R4232 [View PDF (105 kB)]
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Excitonic lifetimes in (Zn,Cd)Se/ZnSe and ZnSe/Zn(Se,S) quantum wires
R. Spiegel, G. Bacher, K. Herz, M. Illing, T. Kümmell, A. Forchel, B. Jobst, D. Hommel, G. Landwehr, J. Söllner, and M. Heuken
pp. R4233-R4236 [View PDF (71 kB)]
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Lateral correlation in mesoscopic structures on the silicon (001) surface determined by grating x-ray diffuse scattering
Qun Shen, C. C. Umbach, B. Weselak, and J. M. Blakely
pp. R4237-R4240 [View PDF (149 kB)]

Surface physics, low-dimensional systems, and related topics

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Grain-boundary dissociation by the emission of stacking faults
J. D. Rittner, D. N. Seidman, and K. L. Merkle
pp. R4241-R4244 [View PDF (177 kB)]
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Selective laser removal of the dimer layer from Si(100) surfaces revealed by scanning tunneling microscopy
Jun Xu, S. H. Overbury, and J. F. Wendelken
pp. R4245-R4248 [View PDF (423 kB)]
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Helium-adsorbate cross section on highly corrugated substrates
G. Armand, L. Schwenger, and H. -J. Ernst
pp. R4249-R4252 [View PDF (64 kB)]
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H-enhanced mobility and defect formation at surfaces: H on Be(0001)
Roland Stumpf
pp. R4253-R4256 [View PDF (120 kB)]
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Resonantlike desorption of negative ions by core-level excitation under electron bombardment
M. Petravić, J. S. Williams, and A. Hoffman
pp. R4257-R4259 [View PDF (58 kB)]

ARTICLES

Electronic structure: wide-band, narrow-band, and strongly correlated systems

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Polarization-dependent optical parameters of arbitrarily anisotropic homogeneous layered systems
Mathias Schubert
pp. 4265-4274 [View PDF (183 kB)]
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Electronic structure of cerium in the self-interaction-corrected local-spin-density approximation
A. Svane
pp. 4275-4286 [View PDF (230 kB)]
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Electronic structure of nanometric Si/C, Si/N, and Si/C/N powders studied by both x-ray-photoelectron and soft-x-ray spectroscopies
M. Driss-Khodja, A. Gheorghiu, G. Dufour, H. Roulet, C. Sénémaud, and M. Cauchetier
pp. 4287-4293 [View PDF (104 kB)]
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Renormalization approach for transport and electronic properties of conducting polymers
Riccardo Farchioni, Giuseppe Grosso, and Giuseppe Pastori Parravicini
pp. 4294-4299 [View PDF (118 kB)]
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Prospects for non-Fermi-liquid behavior of a two-level impurity in a metal
Aris L. Moustakas and Daniel S. Fisher
pp. 4300-4315 [View PDF (294 kB)]
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Localized low-energy excitations in strongly correlated metals
U. Muschelknautz and M. Cyrot
pp. 4316-4323 [View PDF (179 kB)]
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Electronic structure of rare-earth pnictides
A. G. Petukhov, W. R. L. Lambrecht, and B. Segall
pp. 4324-4339 [View PDF (278 kB)]
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Theoretical study of the evolution of electronic band structure of polythiophene due to bipolaron doping
D. Giri and K. Kundu
pp. 4340-4350 [View PDF (184 kB)]
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Electron valence band of zirconium tetrafluoride
G. Kemister and T. Warmiński
pp. 4351-4355 [View PDF (87 kB)]
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Importance of matrix correlations in dye-doped solid rare gases: A hole-burning study
P. Geissinger, L. Kador, and D. Haarer
pp. 4356-4366 [View PDF (184 kB)]
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Third-harmonic-generation spectroscopy of poly(p-phenylenevinylene): A comparison with oligomers and scaling laws for conjugated polymers
A. Mathy, K. Ueberhofen, R. Schenk, H. Gregorius, R. Garay, K. Müllen, and C. Bubeck
pp. 4367-4376 [View PDF (188 kB)]
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Electronic structure of defects and impurities in III-V nitrides: Vacancies in cubic boron nitride
V. A. Gubanov, Z. W. Lu, Barry M. Klein, and C. Y. Fong
pp. 4377-4385 [View PDF (235 kB)]
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Equation of state of metallic fluids near the critical point of phase transition
A. A. Likalter
pp. 4386-4392 [View PDF (118 kB)]
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Transport properties, thermodynamic properties, and electronic structure of SrRuO3
P. B. Allen, H. Berger, O. Chauvet, L. Forro, T. Jarlborg, A. Junod, B. Revaz, and G. Santi
pp. 4393-4398 [View PDF (126 kB)]

Semiconductors I: bulk

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Composition dependence of the structure and electronic properties of liquid Ga-Se alloys studied by ab initio molecular dynamics simulation
J. M. Holender and M. J. Gillan
pp. 4399-4407 [View PDF (299 kB)]
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Tight-binding molecular-dynamics study of density-optimized amorphous GaAs
Hyangsuk Seong and Laurent J. Lewis
pp. 4408-4414 [View PDF (118 kB)]
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Hydrogen solubility and network stability in amorphous silicon
S. Acco, D. L. Williamson, P. A. Stolk, F. W. Saris, M. J. van den Boogaard, W. C. Sinke, W. F. van der Weg, S. Roorda, and P. C. Zalm
pp. 4415-4427 [View PDF (215 kB)]
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Optically enhanced high-field NMR of GaAs
T. Pietraℜ, A. Bifone, T. Rõ õm, and E. L. Hahn
pp. 4428-4433 [View PDF (108 kB)]
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Hydrostatic pressure dependence of isoelectronic bound excitons in beryllium-doped silicon
Sangsig Kim, Irving P. Herman, Karen L. Moore, Dennis G. Hall, and Joze Bevk
pp. 4434-4442 [View PDF (191 kB)]
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Density-functional-based construction of transferable nonorthogonal tight-binding potentials for B, N, BN, BH, and NH
J. Widany, Th. Frauenheim, Th. Köhler, M. Sternberg, D. Porezag, G. Jungnickel, and G. Seifert
pp. 4443-4452 [View PDF (152 kB)]
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Visible and near-infrared ultrafast optical dynamics of hexamethylsexithiophene in solution
G. Lanzani, M. Nisoli, S. De Silvestri, G. Barbarella, M. Zambianchi, and R. Tubino
pp. 4453-4457 [View PDF (109 kB)]
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First-principles calculations of p-type impurities in cubic SiC
Atsuo Fukumoto
pp. 4458-4461 [View PDF (118 kB)]
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Mechanism of carrier photogeneration in amorphous selenium: Fast transient photoconductivity
Daniel Moses
pp. 4462-4470 [View PDF (149 kB)]
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High-pressure effects on high-field magnetophotoluminescence in Cd1-xMxSe (M=Mn,Co)
Y. Matsuda and N. Kuroda
pp. 4471-4478 [View PDF (226 kB)]
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Role of χ(3) anisotropy in the generation of squeezed light in semiconductors
M. Dabbicco, A. M. Fox, G. von Plessen, and J. F. Ryan
pp. 4479-4487 [View PDF (204 kB)]
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Ab initio study of the volume dependence of dynamical and thermodynamical properties of silicon
G.-M. Rignanese, J.-P. Michenaud, and X. Gonze
pp. 4488-4497 [View PDF (198 kB)]
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Photoconductivity of poly(2,5-diheptyloxy-p-phenylene vinylene) in the air atmosphere: Magnetic-field effect and mechanism of generation and recombination of charge carriers
Eugene Frankevich, Anvar Zakhidov, Katsumi Yoshino, Yusei Maruyama, and Kyuya Yakushi
pp. 4498-4508 [View PDF (210 kB)]
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Aging effects on the transport properties in conducting polymer polypyrrole
B. Sixou, N. Mermilliod, and J. P. Travers
pp. 4509-4521 [View PDF (266 kB)]
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Changes of the occupied density of defect states of a-Si:H upon illumination
W. Graf, K. Leihkamm, M. Wolf, J. Ristein, and L. Ley
pp. 4522-4533 [View PDF (257 kB)]
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Resonant photoemission studies of Pb1-xEuxTe
R. Denecke, L. Ley, G. Springholz, and G. Bauer
pp. 4534-4538 [View PDF (111 kB)]

Semiconductors II: surfaces, interfaces, microstructures, and related topics

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Electronic structure and EPC stability of the α-Sn/InSb(111)A nonpolar-polar heterojunction interface
Kazuo Yamamoto and Kazuaki Kobayashi
pp. 4539-4543 [View PDF (176 kB)]
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Recombination and thermal emission of excitons in shallow CdTe/Cd1-xMgxTe quantum wells
R. Spiegel, G. Bacher, K. Herz, A. Forchel, T. Litz, A. Waag, and G. Landwehr
pp. 4544-4548 [View PDF (114 kB)]
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Resonant interaction of phonons with surface vibrational modes in a finite-size superlattice
Seiji Mizuno and Shin-ichiro Tamura
pp. 4549-4552 [View PDF (125 kB)]
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Flipping silicon dimers on Si(100) using scanning tip microscopy: A theoretical investigation
K. Cho and J. D. Joannopoulos
pp. 4553-4556 [View PDF (428 kB)]
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Electron states and luminescence transition in porous silicon
L. Dorigoni, O. Bisi, F. Bernardini, and Stefano Ossicini
pp. 4557-4564 [View PDF (241 kB)]
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Surface-defect formation on heavily doped InAs and GaAs layers studied by scanning tunneling microscopy
Hiroshi Yamaguchi and Yoshiji Horikoshi
pp. 4565-4569 [View PDF (324 kB)]
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Surface segregation and ordering in III-V semiconductor alloys
Sverre Froyen and Alex Zunger
pp. 4570-4579 [View PDF (270 kB)]
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Thermal formation of Zn-dopant-vacancy defect complexes on InP(110) surfaces
Ph. Ebert, M. Heinrich, M. Simon, C. Domke, K. Urban, C. K. Shih, M. B. Webb, and M. G. Lagally
pp. 4580-4590 [View PDF (1,335 kB)]
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Stability, dynamical properties, and melting of a classical bilayer Wigner crystal
G. Goldoni and F. M. Peeters
pp. 4591-4603 [View PDF (291 kB)]
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Sulfide-passivated GaAs(001). I. Chemistry analysis by photoemission and reflectance anisotropy spectroscopies
D. Paget, J. E. Bonnet, V. L. Berkovits, P. Chiaradia, and J. Avila
pp. 4604-4614 [View PDF (189 kB)]
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Sulfide-passivated GaAs (001). II. Electronic properties
D. Paget, A. O. Gusev, and V. L. Berkovits
pp. 4615-4622 [View PDF (134 kB)]
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Capacitance-voltage characteristics of a Schottky junction containing SiGe/Si quantum wells
Fang Lu, Dawei Gong, Jianbao Wang, Qinhua Wang, Henghui Sun, and Xun Wang
pp. 4623-4629 [View PDF (125 kB)]
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Generalization of the k⋅p approach for strained layered semiconductor structures grown on high-index-planes
J. Los, A. Fasolino, and A. Catellani
pp. 4630-4648 [View PDF (421 kB)]
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Model for carrier dynamics and photoluminescence quenching in wet and dry porous silicon thin films
Louis Brus
pp. 4649-4656 [View PDF (126 kB)]
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Localization and delocalization of an electron in biased and unbiased quantum wells driven by a mono- and bichromatic laser field
Yuri Dakhnovskii, Raanan Bavli, and Horia Metiu
pp. 4657-4663 [View PDF (163 kB)]
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Electron correlations in antidot arrays in a magnetic field
Tapash Chakraborty and Pekka Pietiläinen
pp. 4664-4667 [View PDF (101 kB)]
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Size dependence of the changeover from geometric to magnetic confinement in In0.53Ga0.47As/InP quantum wires
M. Bayer, P. Ils, M. Michel, A. Forchel, T. L. Reinecke, and P. A. Knipp
pp. 4668-4671 [View PDF (77 kB)]
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Multiple-quantum resonant reflection of ballistic electrons from a high-frequency potential step
O. A. Tkachenko, V. A. Tkachenko, and D. G. Baksheyev
pp. 4672-4675 [View Page Images or PDF (711 kB)]
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Two-dimensional electron gas in a linearly varying magnetic field: Quantization of the electron and current density
E. Hofstetter, J. M. C. Taylor, and A. MacKinnon
pp. 4676-4683 [View PDF (252 kB)]
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Fermi-edge singularity of the Tomonaga-Luttinger liquids with spin-split Fermi points
Hiroshi Otani and Tetsuo Ogawa
pp. 4684-4698 [View PDF (420 kB)]
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Interface broadening and Raman scattering in Si1-xGex/Si superlattices
Xiaohan Liu, Daming Huang, Zuimin Jiang, and Xun Wang
pp. 4699-4703 [View PDF (118 kB)]
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Excitation-intensity-dependent photoluminescence in semiconductor quantum wells due to internal electric fields
A. Chtanov, T. Baars, and M. Gal
pp. 4704-4707 [View PDF (85 kB)]
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Optical spectroscopy in (Zn,Cd)Se-ZnSe graded-index separate-confinement heterostructures
L. Aigouy, V. Mathet, F. Liaci, B. Gil, O. Briot, N. Briot, T. Cloitre, M. Averous, and R. L. Aulombard
pp. 4708-4721 [View PDF (295 kB)]
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Time-resolved luminescence studies in an n-type Zn1-xCdxSe/ZnSySe1-y quantum well
K. Nakano, Y. Kishita, S. Itoh, M. Ikeda, A. Ishibashi, and U. Strauss
pp. 4722-4728 [View PDF (143 kB)]
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Angle-resolved photoemission from a GaAs (1¯ 1¯ 1¯)-2×2 surface: Off-normal emission study
Y. Q. Cai, R. C. G. Leckey, J. D. Riley, A. P. J. Stampfl, and L. Ley
pp. 4729-4733 [View PDF (165 kB)]
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Core level and valence-band studies of the (111)2×2 surfaces of InSb and InAs
L. Ö. Olsson, L. Ilver, J. Kanski, P. O. Nilsson, C. B. M. Andersson, U. O. Karlsson, and M. C. Håkansson
pp. 4734-4740 [View PDF (558 kB)]
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Temperature dependence of strains and stresses in undercritical cubic superlattices and heterojunctions
T. D. Wen and E. Anastassakis
pp. 4741-4751 [View PDF (260 kB)]
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Phonon properties of one-dimensional nanocrystalline solids
X. H. Yan, Lide Zhang, Zhuping Duan, and Shuzhi Cai
pp. 4752-4756 [View PDF (132 kB)]
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Solid-phase epitaxy induced by low-power pulsed-laser annealing of III-V compound semiconductors
G. Vitali, L. Palumbo, M. Rossi, G. Zollo, C. Pizzuto, L. Di Gaspare, and F. Evangelisti
pp. 4757-4769 [View PDF (2,166 kB)]
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Mechanism of electron-beam doping in semiconductors
Takao Wada and Kyoichiro Yasuda
pp. 4770-4781 [View PDF (275 kB)]
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Three-dimensional x-y model with a Chern-Simons term
Norbert Schultka and Efstratios Manousakis
pp. 4782-4790 [View PDF (209 kB)]
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Metallic character of the K/Si(100)-(2×1) interface at saturation coverage: A Mott-Hubbard model calculation of its near-Fermi-level band structure
M. C. Refolio, J. M. López Sancho, M. P. López Sancho, and J. Rubio
pp. 4791-4795 [View PDF (130 kB)]
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Magnetotransport studies of strongly disordered annealed amorphous Fe/Si multilayers
Yeong Kuo Lin, T. R. Novet, D. C. Johnson, and J. M. Valles, Jr.
pp. 4796-4808 [View PDF (238 kB)]
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Photoluminescence spectra of GaP/AlP short-period superlattices under high magnetic fields
Kazuhito Uchida, Noboru Miura, Jun Kitamura, and Hiroshi Kukimoto
pp. 4809-4813 [View PDF (126 kB)]
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Microscopic theory of optical gain in small semiconductor quantum dots
Y. Z. Hu, H. Gie\Sen, N. Peyghambarian, and S. W. Koch
pp. 4814-4822 [View PDF (191 kB)]
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Bipolaron lattice formation at metal-polymer interfaces
P. S. Davids, A. Saxena, and D. L. Smith
pp. 4823-4833 [View PDF (191 kB)]
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Time-periodic behavior of multiband superlattices in static electric fields
Daniel W. Hone and Xian-Geng Zhao
pp. 4834-4837 [View PDF (108 kB)]
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Quantum transport in the presence of a finite-range time-modulated potential
C. S. Tang and C. S. Chu
pp. 4838-4844 [View PDF (145 kB)]
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Hot-electron transport through Au/GaAs and Au/GaAs/AlAs heterojunction interfaces: Ballistic-electron-emission-microscopy measurement and Monte Carlo simulation
Mao-long Ke, D. I. Westwood, C. C. Matthai, B. E. Richardson, and R. H. Williams
pp. 4845-4849 [View PDF (75 kB)]
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Renormalization group and exact diagonalization studies of Hubbard rings with impurities
Hiroyuki Mori and Minoru Hamada
pp. 4850-4854 [View PDF (120 kB)]
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Magnetoresistance of two-dimensional mesoscopic structures: A variational approach
David Brown, Y. B. Band, and Y. Avishai
pp. 4855-4869 [View PDF (291 kB)]
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Landau-Zener transitions and dissipation in a mesoscopic ring
R. Hübner and R. Graham
pp. 4870-4885 [View PDF (354 kB)]
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Observation of oscillatory linewidth behavior in the magnetoluminescence of a modulation-doped InxGa1-xAs quantum well
J. J. Harris, J. M. Roberts, S. N. Holmes, and K. Woodbridge
pp. 4886-4890 [View PDF (125 kB)]
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Magneto-optic study of the interface in semimagnetic semiconductor heterostructures: Intrinsic effect and interface profile in CdTe-Cd1-xMnxTe
W. Grieshaber, A. Haury, J. Cibert, Y. Merle d’Aubigné, A. Wasiela, and J. A. Gaj
pp. 4891-4904 [View PDF (230 kB)]
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III-V diluted magnetic semiconductor: Substitutional doping of Mn in InAs
Y. L. Soo, S. W. Huang, Z. H. Ming, Y. H. Kao, H. Munekata, and L. L. Chang
pp. 4905-4909 [View PDF (79 kB)]

Surface physics, low-dimensional systems, and related topics

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Shape of molecular adsorbates in STM images: A theoretical study of benzene on Pt(111)
P. Sautet and M.-L. Bocquet
pp. 4910-4925 [View PDF (2,354 kB)]
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Potential-energy surface for H2 dissociation over Pd(100)
S. Wilke and M. Scheffler
pp. 4926-4932 [View PDF (216 kB)]
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Ab initio study of AlN and α-SiC (112¯0) surface relaxation
Krisztina Kádas, Santiago Alvarez, Eliseo Ruiz, and Pere Alemany
pp. 4933-4938 [View PDF (147 kB)]
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Phase diagrams and rotated incommensurate phases of K, Rb, and Cs adsorbed on Ag(111)
Gerald S. Leatherman and Renee D. Diehl
pp. 4939-4946 [View PDF (302 kB)]
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Theory of segregation using the equivalent-medium approximation and bond-strength modifications at surfaces: Application to fcc Pd-X alloys
J. L. Rousset, J. C. Bertolini, and P. Miegge
pp. 4947-4957 [View PDF (261 kB)]
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Ab initio calculations of energies and self-diffusion on flat and stepped surfaces of Al and their implications on crystal growth
Roland Stumpf and Matthias Scheffler
pp. 4958-4973 [View PDF (457 kB)]
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Hydrogen absorption by thin Pd/Nb films deposited on glass
G. Reisfeld, Najeh M. Jisrawi, M. W. Ruckman, and Myron Strongin
pp. 4974-4979 [View PDF (125 kB)]
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Background removal in surface electron spectroscopy: Influence of surface excitations
Y. F. Chen and Y. T. Chen
pp. 4980-4988 [View PDF (206 kB)]
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Structure and bonding of small stoichiometric lithium oxide clusters
Fabio Finocchi and Claudine Noguera
pp. 4989-4998 [View PDF (510 kB)]
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Exactly solvable model of surface second-harmonic generation
Bernardo S. Mendoza and W. Luis Mochán
pp. 4999-5006 [View PDF (181 kB)]
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Surface-induced bond anharmonicity probed through a two-phonon bound state: Methoxide adsorbed on Mo(110)
P. Uvdal, M. K. Weldon, and C. M. Friend
pp. 5007-5010 [View PDF (65 kB)]
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Double surface-bulk melting and suppression of overheating at first-order phase transitions
E. L. Nagaev and V. E. Zil’bervarg
pp. 5011-5014 [View PDF (83 kB)]
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Photoemission studies of the electronic properties of the Ce/Fe(100) and Ce/Fe(110) interfaces: Formation of a strongly hybridized cerium phase
B. Kierren, F. Bertran, T. Gourieux, N. Witkowski, D. Malterre, and G. Krill
pp. 5015-5023 [View PDF (188 kB)]

COMMENTS

•
Comment on ‘‘Constraints on pairings in the Hubbard model’’
Xin-Zhong Yan
pp. 5024-5025 [View PDF (73 kB)]
 
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