Physical Review B
– 15 September 1996
Volume 54, Issue 11
BRIEF REPORTS
Electronic structure: wide-band, narrow-band, and strongly correlated systems
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Symmetrized density-matrix renormalization-group method for excited states of Hubbard models
S. Ramasesha, Swapan K. Pati, H. R. Krishnamurthy, Z. Shuai, and J. L. Brédas
pp.
7598-7601
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Shallow and deep traps in conjugated polymers of high intrachain order
W. Graupner, G. Leditzky, G. Leising, and U. Scherf
pp.
7610-7613
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PDF (89 kB)]
Semiconductors I: bulk
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Cathodoluminescence and photoinduced current spectroscopy studies of defects in Cd0.8Zn0.2Te
A. Castaldini, A. Cavallini, B. Fraboni, L. Polenta, P. Fernandez, and J. Piqueras
pp.
7622-7625
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Jahn-Teller effect in ZnS:Fe2+ revisited with a modified Lanczos-type algorithm
G. Bevilacqua, L. Martinelli, and G. Pastori Parravicini
pp.
7626-7629
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EPR study of the hyperfine structure of Yb3+ ion in Pb1-xYbxS, Pb1-xYbxSe, and Pb1-xYbxTe single crystals
Samih Isber, Salam Charar, Xavier Gratens, Claude Fau, Michel Averous, Sushil K. Misra, and Zbiniew Golacki
pp.
7634-7636
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Semiconductors II: surfaces, interfaces, microstructures, and related topics
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Smooth monolayer As- and Ga-terminated GaAs(100) surfaces
M.-H. Tsai, C. F. Liu, and C. S. Chang
pp.
7637-7639
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PDF (67 kB)]
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Direct manifestation of the Fermi pressure in a two-dimensional electron system
J. Nehls, T. Schmidt, U. Merkt, D. Heitmann, A. G. Norman, and R. A. Stradling
pp.
7651-7653
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Low-temperature electron mobility in a real δ-doped semiconductor
L. R. González, J. Krupski, and T. Szwacka
pp.
7658-7661
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PDF (109 kB)]
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Oscillator strengths for optical band-to-band processes in GaN epilayers
Bernard Gil, Fayçal Hamdani, and Hadis Morkoç
pp.
7678-7681
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Type-II interface exciton in ZnSe/(Zn,Mn)Se heterostructures
V. V. Rossin, T. Böttger, and F. Henneberger
pp.
7682-7685
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PDF (102 kB)]
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Si 2p core-level shifts at the Si(100)-SiO2 interface: An experimental study
K. Z. Zhang, M. M. Banaszak Holl, J. E. Bender, IV, S. Lee, and F. R. McFeely
pp.
7686-7689
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Surface physics, low-dimensional systems, and related topics
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Shapes of 3He clusters
Constantine Yannouleas and Uzi Landman
pp.
7690-7693
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PDF (108 kB)]
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Surface-induced broadening of photoemission core levels
M. Zacchigna, C. Astaldi, K. C. Prince, M. Sastry, C. Comicioli, M. Evans, R. Rosei, C. Quaresima, C. Ottaviani, C. Crotti, M. Matteucci, and P. Perfetti
pp.
7713-7715
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Nonlocal screening effects in 2p x-ray photoemission spectroscopy of NiO (100)
D. Alders, F. C. Voogt, T. Hibma, and G. A. Sawatzky
pp.
7716-7719
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PDF (87 kB)]
ARTICLES
Electronic structure: wide-band, narrow-band, and strongly correlated systems
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Metal-insulator transitions due to self-doping
Stefan Blawid, Hoang Anh Tuan, Takashi Yanagisawa, and Peter Fulde
pp.
7771-7778
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PDF (169 kB)]
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Vacancies, interstitials, and close Frenkel pairs on the zinc sublattice of ZnSe
F. C. Rong, W. A. Barry, J. F. Donegan, and G. D. Watkins
pp.
7779-7788
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PDF (208 kB)]
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Electronic properties of TiSi2 single crystals at low temperatures
M. Affronte, O. Laborde, J. C. Lasjaunias, U. Gottlieb, and R. Madar
pp.
7799-7806
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PDF (145 kB)]
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Photoemission study of electronic structures of disordered Ni-Pt and Cu-Pt alloys
Tschang-Uh Nahm, Jae-Young Kim, S.-J. Oh, S.-M. Chung, J.-H. Park, J. W. Allen, K. Jeong, and Sehun Kim
pp.
7807-7815
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PDF (143 kB)]
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Electronic structure of La1-xSrxCrO3
K. Maiti and D. D. Sarma
pp.
7816-7822
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PDF (142 kB)]
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Excited states in metal voids
Raphael de Haro, Jr. and João da Providência, Jr.
pp.
7823-7829
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PDF (163 kB)]
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Microcavities in photonic crystals: Mode symmetry, tunability, and coupling efficiency
Pierre R. Villeneuve, Shanhui Fan, and J. D. Joannopoulos
pp.
7837-7842
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Point-charge electrostatics in disordered alloys
C. Wolverton, Alex Zunger, S. Froyen, and S.-H. Wei
pp.
7843-7856
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PDF (258 kB)]
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First-principles study of titanium oxides
Chinmong Leung, M. Weinert, Philip B. Allen, and Renata M. Wentzcovitch
pp.
7857-7864
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PDF (229 kB)]
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Thermodynamics of the Falicov-Kimball model
Pavol Farkašovský
pp.
7865-7873
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PDF (214 kB)]
Semiconductors I: bulk
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Nitrogen-related dopant and defect states in CVD diamond
E. Rohrer, C. F. O. Graeff, R. Janssen, C. E. Nebel, M. Stutzmann, H. Güttler, and R. Zachai
pp.
7874-7880
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Hydrogen-related defects in polycrystalline CVD diamond
X. Zhou, G. D. Watkins, K. M. McNamara Rutledge, R. P. Messmer, and Sanjay Chawla
pp.
7881-7890
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PDF (199 kB)]
Semiconductors I: bulk
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Optimized effective-potential calculations of Ge and GaAs
D. M. Bylander and Leonard Kleinman
pp.
7891-7896
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PDF (104 kB)]
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Fe, Ru, and Os disilicides: Electronic structure of ordered compounds
J. van Ek, P. E. A. Turchi, and P. A. Sterne
pp.
7897-7908
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Metastable defect complexes in GaAs
S. Pöykkö, M. J. Puska, M. Alatalo, and R. M. Nieminen
pp.
7909-7916
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PDF (125 kB)]
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Electric and magnetic dipole two-photon absorption in semiconductors
J. S. Michaelis, K. Unterrainer, E. Gornik, and E. Bauser
pp.
7917-7920
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Picosecond and millisecond dynamics of photoexcited carriers in porous silicon
P. Malý, F. Trojánek, J. Kudrna, A. Hospodková, S. Banáš, V. Kohlová, J. Valenta, and I. Pelant
pp.
7929-7936
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Carrier transport in amorphous silicon-based thin-film transistors studied by spin-dependent transport
Genshiro Kawachi, Carlos F. O. Graeff, Martin S. Brandt, and Martin Stutzmann
pp.
7957-7964
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PDF (151 kB)]
Semiconductors II: surfaces, interfaces, microstructures, and related topics
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Donor activation and electronic screening at an antimony δ layer in silicon
J. M. C. Thornton, R. J. Cole, D. J. Gravesteijn, and P. Weightman
pp.
7972-7978
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Analysis of capacitance-voltage characteristics of Si1-xGex/Si quantum-well structures
J. B. Wang, F. Lu, S. K. Zhang, B. Zhang, D. W. Gong, H. H. Sun, and Xun Wang
pp.
7979-7986
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Simulation studies of photon-assisted quantum transport
Kousuke Yakubo, Shechao Feng, and Qing Hu
pp.
7987-7995
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PDF (183 kB)]
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Electronic structure of a Si δ-doped layer in a GaAs/AlxGa1-xAs/GaAs quantum barrier
J. M. Shi, P. M. Koenraad, A. F. W. van de Stadt, F. M. Peeters, J. T. Devreese, and J. H. Wolter
pp.
7996-8004
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Carrier-carrier scattering in the gain dynamics of InxGa1-xAs/AlyGa1-yAs diode lasers
G. D. Sanders, C.-K. Sun, B. Golubovic, J. G. Fujimoto, and C. J. Stanton
pp.
8005-8020
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First-principles studies of hydrogenated Si(111)-7×7
D. R. Alfonso, C. Noguez, D. A. Drabold, and S. E. Ulloa
pp.
8028-8032
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PDF (180 kB)]
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Plasmon-pole approximation for semiconductor quantum-wire electrons
S. Das Sarma, E. H. Hwang, and Lian Zheng
pp.
8057-8063
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Exciton-polariton ladder in a semiconductor microcavity
H. Cao, S. Pau, Y. Yamamoto, and G. Björk
pp.
8083-8086
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PDF (87 kB)]
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Electric field effects on excitons in gallium nitride
F. Binet, J. Y. Duboz, E. Rosencher, F. Scholz, and V. Härle
pp.
8116-8121
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Surface physics, low-dimensional systems, and related topics
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Diffuse scattering from interface roughness in grazing-incidence x-ray diffraction
S. A. Stepanov, E. A. Kondrashkina, M. Schmidbauer, R. Köhler, J.-U. Pfeiffer, T. Jach, and A. Yu. Souvorov
pp.
8150-8162
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Direct reconstruction of three-dimensional atomic adsorption sites by holographic LEED
D. K. Saldin, K. Reuter, P. L. De Andres, H. Wedler, X. Chen, J. B. Pendry, and K. Heinz
pp.
8172-8176
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Calculation of the dielectric constant of monolayer films on a material surface
Mitsumasa Iwamoto, Yoshinobu Mizutani, and Akihiko Sugimura
pp.
8186-8190
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Membranes on rough self-affine surfaces
G. Palasantzas and G. Backx
pp.
8213-8217
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Optical properties of self-affine thin films
Vladimir M. Shalaev, R. Botet, J. Mercer, and E. B. Stechel
pp.
8235-8242
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Friction on adsorbed monolayers
Elizabeth D. Smith, Mark O. Robbins, and Marek Cieplak
pp.
8252-8260
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