Physical Review B
– 15 September 1996
Volume 54, Issue 12
RAPID COMMUNICATIONS
RAPID COMMUNICATIONS
•
Magnetoresistance and magnetic breakdown in the quasi-two-dimensional conductors (BEDT-TTF)2MHg(SCN)4[M=K, Rb, Tl]
Ross H. McKenzie, G. J. Athas, J. S. Brooks, R. G. Clark, A. S. Dzurak, R. Newbury, R. P. Starrett, A. Skougarevsky, M. Tokumoto, N. Kinoshita, T. Kinoshita, and Y. Tanaka
pp.
R8289-R8292
[ View
PDF (103 kB)]
•
Coulomb enhancement of Faraday rotation in semimagnetic semiconductors
P. Leisching, R. Pankoke, C. Buss, R. Frey, C. Flytzanis, J. Cibert, and A. Wasiela
pp.
R8305-R8308
[ View
PDF (97 kB)]
•
Spin splitting in a polarized quasi-two-dimensional exciton gas
L. Viña, L. Muñoz, E. Pérez, J. Fernández-Rossier, C. Tejedor, and K. Ploog
pp.
R8317-R8320
[ View
PDF (95 kB)]
•
Experimental determination of Γ-X intervalley transfer mechanisms in GaAs/AlAs heterostructures
R. Teissier, J. J. Finley, M. S. Skolnick, J. W. Cockburn, J. -L. Pelouard, R. Grey, G. Hill, M. A. Pate, and R. Planel
pp.
R8329-R8332
[ View
PDF (107 kB)]
•
Hierarchy of relaxation times in the system of Mn-ion spins in photoexcited semimagnetic quantum wells
V. D. Kulakovskii, M. G. Tyazhlov, A. I. Filin, D. R. Yakovlev, A. Waag, and G. Landwehr
pp.
R8333-R8336
[ View
PDF (91 kB)]
•
Anisotropic surface acoustic wave scattering in quantum-wire arrays
G. R. Nash, S. J. Bending, M. Boero, P. Grambow, K. Eberl, and Y. Kershaw
pp.
R8337-R8340
[ View
PDF (113 kB)]
•
Coulomb gaps in one-dimensional spin-polarized electron systems
Gun Sang Jeon, M. Y. Choi, and S. -R. Eric Yang
pp.
R8341-R8344
[ View
PDF (96 kB)]
•
Electronic spectral functions for quantum Hall edge states
U. Zülicke and A. H. MacDonald
pp.
R8349-R8352
[ View
PDF (130 kB)]
•
Large magnetotunneling effect at low magnetic fields in micrometer-scale epitaxial La0.67Sr0.33MnO3 tunnel junctions
Yu Lu, X. W. Li, G. Q. Gong, Gang Xiao, A. Gupta, P. Lecoeur, J. Z. Sun, Y. Y. Wang, and V. P. Dravid
pp.
R8357-R8360
[ View
PDF (271 kB)]
•
Intrinsic band-edge photoluminescence from silicon clusters at room temperature
L. Tsybeskov, K. L. Moore, D. G. Hall, and P. M. Fauchet
pp.
R8361-R8364
[ View
PDF (66 kB)]
•
Photoinduced formation of dimers at a liquid/(001)GaAs interface
V. L. Berkovits, A. O. Gusev, V. M. Lantratov, T. V. L'vova, A. B. Pushnyi, V. P. Ulin, and D. Paget
pp.
R8369-R8372
[ View
PDF (69 kB)]
•
Raman scattering from acoustic phonons confined in Si nanocrystals
Minoru Fujii, Yoshihiko Kanzawa, Shinji Hayashi, and Keiichi Yamamoto
pp.
R8373-R8376
[ View
PDF (205 kB)]
•
Electronic properties of carbon nanotubes with polygonized cross sections
J. -C. Charlier, Ph. Lambin, and T. W. Ebbesen
pp.
R8377-R8380
[ View
PDF (114 kB)]
•
Epitaxial growth and optical transitions of cubic GaN films
D. Schikora, M. Hankeln, D. J. As, K. Lischka, T. Litz, A. Waag, T. Buhrow, and F. Henneberger
pp.
R8381-R8384
[ View
PDF (444 kB)]
ARTICLES
Electronic structure: wide-band, narrow-band, and strongly correlated systems
•
Algebraic Bethe ansatz for the supersymmetric U model
Katrina E. Hibberd, Mark D. Gould, and Jon R. Links
pp.
8430-8437
[ View
PDF (197 kB)]
•
Electronic structure of the quasi-one-dimensional halogen-bridged Ni complexes [Ni(chxn)2X]X2(X=Cl, Br) and related Ni compounds
H. Okamoto, Y. Shimada, Y. Oka, A. Chainani, T. Takahashi, H. Kitagawa, T. Mitani, K. Toriumi, K. Inoue, T. Manabe, and M. Yamashita
pp.
8438-8445
[ View
PDF (200 kB)]
•
Photoemission spectral weight distribution in Y1-xCaxTiO3
K. Morikawa, T. Mizokawa, A. Fujimori, Y. Taguchi, and Y. Tokura
pp.
8446-8451
[ View
PDF (133 kB)]
•
Anderson localization for two interacting electrons in a disordered chain
S. N. Evangelou, Shi-Jie Xiong, and E. N. Economou
pp.
8469-8473
[ View
PDF (133 kB)]
•
Electronic structure of Al3Ni and AlNi3 alloys
Zs. Kovács, L. Kövér, P. Weightman, D. Varga, R. Sanjinés, J. Pálinkás, G. Margaritondo, and H. Adachi
pp.
8501-8505
[ View
PDF (114 kB)]
Semiconductors I: bulk
•
Effects of point defects on lattice parameters of semiconductors
NuoFu Chen, Yutian Wang, Hongjia He, and Lanying Lin
pp.
8516-8521
[ View
PDF (125 kB)]
•
Anderson impurity in a semiconductor
Clare C. Yu and M. Guerrero
pp.
8556-8565
[ View
PDF (185 kB)]
Semiconductors II: surfaces, interfaces, microstructures, and related topics
•
Surface structure of the (3×1) and (3×2) reconstructions of Ge(113)
Zheng Gai, Hang Ji, Bo Gao, R. G. Zhao, and W. S. Yang
pp.
8593-8599
[ View
PDF (697 kB)]
•
Influence of surfactant coverage on epitaxial growth of Ge on Si(001)
M. Katayama, T. Nakayama, M. Aono, and C. F. McConville
pp.
8600-8604
[ View
PDF (106 kB)]
•
Two-photon transitions in systems with semiconductor quantum dots
A. V. Fedorov, A. V. Baranov, and K. Inoue
pp.
8627-8632
[ View
PDF (156 kB)]
•
Wigner crystallization in the lowest Landau level for ν⩾1/5
V. A. Kashurnikov, N. V. Prokof’ev, B. V. Svistunov, and I. S. Tupitsyn
pp.
8644-8651
[ View
PDF (170 kB)]
•
Direct test of the composite-fermion model in quantum Hall systems
Sudhansu S. Mandal and V. Ravishankar
pp.
8699-8707
[ View
PDF (189 kB)]
•
Pressure dependence of the optic phonon energies in AlxGa1-xAs
M. Holtz, M. Seon, O. Brafman, R. Manor, and D. Fekete
pp.
8714-8720
[ View
PDF (128 kB)]
•
Electron-assisted exciton transfer and long-lived electrons and holes in GaAs/AlxGa1-xAs quantum wells
B. M. Ashkinadze, E. Tsidilkovski, E. Linder, E. Cohen, Arza Ron, and L. N. Pfeiffer
pp.
8728-8736
[ View
PDF (187 kB)]
•
Direct formation of vertically coupled quantum dots in Stranski-Krastanow growth
N. N. Ledentsov, V. A. Shchukin, M. Grundmann, N. Kirstaedter, J. Böhrer, O. Schmidt, D. Bimberg, V. M. Ustinov, A. Yu. Egorov, A. E. Zhukov, P. S. Kop’ev, S. V. Zaitsev, N. Yu. Gordeev, Zh. I. Alferov, A. I. Borovkov, A. O. Kosogov, S. S. Ruvimov, P. Werner, U. Gösele, and J. Heydenreich
pp.
8743-8750
[ View
PDF (6,349 kB)]
•
Scanning tunneling microscopy on Ga/Si(100)
H. Sakama, A. Kawazu, T. Sueyoshi, T. Sato, and M. Iwatsuki
pp.
8756-8760
[ View
PDF (908 kB)]
•
Strain and surface phenomena in SiGe structures
A. Fischer, H. Kühne, M. Eichler, F. Holländer, and H. Richter
pp.
8761-8768
[ View
PDF (197 kB)]
•
Lattice locations of silicon atoms in δ-doped layers in GaAs at high doping concentrations
R. C. Newman, M. J. Ashwin, M. R. Fahy, L. Hart, S. N. Holmes, C. Roberts, X. Zhang, and J. Wagner
pp.
8769-8781
[ View
PDF (302 kB)]
•
Dephasing time of composite fermions
Patrick A. Lee, Eduardo R. Mucciolo, and Henrik Smith
pp.
8782-8788
[ View
PDF (164 kB)]
•
Optical absorption of wide quantum wires
A. N. Forshaw and D. M. Whittaker
pp.
8794-8798
[ View
PDF (92 kB)]
•
Dynamic structure factor of a two-dimensional electron gas
R. K. Moudgil, P. K. Ahluwalia, and K. Tankeshwar
pp.
8809-8813
[ View
PDF (116 kB)]
•
Noise temperature of n+nn+ GaAs structures
P. Shiktorov, V. Gružinskis, E. Starikov, L. Reggiani, and L. Varani
pp.
8821-8832
[ View
PDF (240 kB)]
Surface physics, low-dimensional systems, and related topics
•
Monolayer Kr films adsorbed on BN
W. Li, P. Shrestha, A. D. Migone, A. Marmier, and C. Girardet
pp.
8833-8843
[ View
PDF (217 kB)]
•
GaAs equilibrium crystal shape from first principles
N. Moll, A. Kley, E. Pehlke, and M. Scheffler
pp.
8844-8855
[ View
PDF (712 kB)]
•
Surface diffusion in the low-friction limit: Occurrence of long jumps
L. Y. Chen, M. R. Baldan, and S. C. Ying
pp.
8856-8861
[ View
PDF (204 kB)]
•
Potential, core-level, and d band shifts at transition-metal surfaces
M. V. Ganduglia-Pirovano, V. Natoli, M. H. Cohen, J. Kudrnovský, and I. Turek
pp.
8892-8898
[ View
PDF (123 kB)]
•
Gibbs-Thomson formula for small island sizes: Corrections for high vapor densities
Badrinarayan Krishnamachari, James McLean, Barbara Cooper, and James Sethna
pp.
8899-8907
[ View
PDF (148 kB)]
•
Imaging material properties by resonant tapping-force microscopy: A model investigation
R. G. Winkler, J. P. Spatz, S. Sheiko, M. Möller, P. Reineker, and O. Marti
pp.
8908-8912
[ View
PDF (105 kB)]
•
Metastable states in hydrogenated amorphous carbon
Sung Soo Kang, Bong Soo Kim, Duck Kyu Park, and Seung-Hun Yang
pp.
8919-8923
[ View
PDF (89 kB)]
|
|