Physical Review B
– 15 December 1996
Volume 54, Issue 23
BRIEF REPORTS
Electronic structure: wide-band, narrow-band, and strongly correlated systems
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Random-matrix theory of impurity band tails
A. Bulatov and Joseph L. Birman
pp.
16305-16308
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Resonant photoemission study of pyrite-type NiS2, CoS2 and FeS2
A. Fujimori, K. Mamiya, T. Mizokawa, T. Miyadai, T. Sekiguchi, H. Takahashi, N. Môri, and S. Suga
pp.
16329-16332
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Frequency locking and nonlocal transport in charge-density-wave conductors
S. G. Lemay, R. E. Thorne, M. C. Saint-Lager, and P. Monceau
pp.
16341-16344
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Nonlinear susceptibility of periodic composites with shell structure
Chengxiang Zhang, Xuhong Wu, Shaozeng Wu, and Wenhui Su
pp.
16349-16352
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PDF (107 kB)]
BRIEF REPORTS
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Effect of interchain separation on the photoinduced absorption spectra of polycarbazolyldiacetylenes
D. Comoretto, I. Moggio, C. Dell'Erba, C. Cuniberti, G. F. Musso, G. Dellepiane, L. Rossi, M. E. Giardini, and A. Borghesi
pp.
16357-16360
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Electronic structure: wide-band, narrow-band, and strongly correlated systems
Semiconductors I: bulk
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Binding energy for the intrinsic excitons in wurtzite GaN
W. Shan, B. D. Little, A. J. Fischer, J. J. Song, B. Goldenberg, W. G. Perry, M. D. Bremser, and R. F. Davis
pp.
16369-16372
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Semiconductors II: surfaces, interfaces, microstructures, and related topics
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Raman scattering from optical phonons in InAs1-xSbx/InAs strained-layer superlattices
L. Artús, R. A. Stradling, Y. B. Li, S. J. Webb, W. T. Yuen, S. J. Chung, and R. Cuscó
pp.
16373-16376
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X-ray-reflectivity study of Ge-Si-Ge films
S. Banerjee, M. K. Sanyal, A. Datta, S. Kanakaraju, and S. Mohan
pp.
16377-16380
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X-ray-diffraction study of size-dependent strain in quantum-wire structures
Qun Shen, Stefan W. Kycia, E. S. Tentarelli, W. J. Schaff, and L. F. Eastman
pp.
16381-16384
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Stokes shift in quantum wells: Trapping versus thermalization
A. Polimeni, A. Patanè, M. Grassi Alessi, M. Capizzi, F. Martelli, A. Bosacchi, and S. Franchi
pp.
16389-16392
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Valley splitting in triangular Si(001) quantum wells
G. Grosso, G. Pastori Parravicini, and C. Piermarocchi
pp.
16393-16396
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Even-odd filling-factor switching in one-dimensional lateral superlattices
M. Tornow, D. Weiss, A. Manolescu, R. Menne, K. v. Klitzing, and G. Weimann
pp.
16397-16400
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Resonant magnetotunneling through individual self-assembled InAs quantum dots
I. E. Itskevich, T. Ihn, A. Thornton, M. Henini, T. J. Foster, P. Moriarty, A. Nogaret, P. H. Beton, L. Eaves, and P. C. Main
pp.
16401-16404
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Edge and bulk transport in variably connected quantum Hall conductor
M. Rahman, J. H. Davies, I. A. Larkin, M. C. Holland, A. R. Long, and J. G. Williamson
pp.
16409-16412
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Quantum Hall transitions in (TMTSF)2PF6
S. Valfells, J. S. Brooks, Z. Wang, S. Takasaki, J. Yamada, H. Anzai, and M. Tokumoto
pp.
16413-16416
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Effect of Coulomb enhancement on optical gain in (Zn,Cd)Se/ZnSe multiple quantum wells
F. P. Logue, P. Rees, J. F. Heffernan, C. Jordan, J. F. Donegan, J. Hegarty, F. Hiei, and A. Ishibashi
pp.
16417-16420
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Composite fermions on a Haldane sphere: Quasielectron-quasihole symmetry
K. S. Yi, P. Sitko, A. Khurana, and J. J. Quinn
pp.
16432-16435
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Surface physics, low-dimensional systems, and related topics
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Equilibrium shape equation and possible shapes of carbon nanotubes
S. S. Xie, W. Z. Li, L. X. Qian, B. H. Chang, C. S. Fu, R. A. Zhao, W. Y. Zhou, and G. Wang
pp.
16436-16439
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Adsorption sites and surface vibrations of the Cu(110)-(2×3)-N surface
J. B. Hannon, H. A. Dürr, and E. W. Plummer
pp.
16444-16447
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Picosecond photoluminescence decay of Si-doped chemical-vapor-deposited diamond films
A. V. Turukhin, C.-H. Liu, A. A. Gorokhovsky, R. R. Alfano, and W. Phillips
pp.
16448-16451
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Strain-induced distortion of the bulk bands of gadolinium
Carlo Waldfried, D. N. McIlroy, C. W. Hutchings, and P. A. Dowben
pp.
16460-16463
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ARTICLES
Electronic structure: wide-band, narrow-band, and strongly correlated systems
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One-particle spectral weight of the three-dimensional single-band Hubbard model
M. Ulmke, R. T. Scalettar, A. Nazarenko, and E. Dagotto
pp.
16523-16532
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Metal-insulator transition in oxygen-deficient LaNiO3-x perovskites
R. D. Sánchez, M. T. Causa, A. Caneiro, A. Butera, M. Vallet-Regí, M. J. Sayagués, J. González-Calbet, F. García-Sanz, and J. Rivas
pp.
16574-16578
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Electron-phonon scattering contributions to metallic resistivity at 0 K
Richard L. Liboff and Gregory K. Schenter
pp.
16591-16601
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High-temperature thermopower of LaMnO3 and related systems
D. B. Marsh and P. E. Parris
pp.
16602-16607
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Ultraviolet photorefraction and the superionic phase transition of α-LiIO3
Jingjun Xu, Xuefeng Yue, and Romano A. Rupp
pp.
16618-16624
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Auger decay of degenerate and Bose-condensed excitons in Cu2O
G. M. Kavoulakis and Gordon Baym
pp.
16625-16636
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Photoinduced conversion of optically active defects in germanium-doped silica
B. Crivelli, M. Martini, F. Meinardi, A. Paleari, and G. Spinolo
pp.
16637-16640
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Oxygen 1s x-ray-absorption near-edge structure of Zn-Ni ferrites: A comparison with the theoretical calculations
W. F. Pong, M. H. Su, M.-H. Tsai, H. H. Hsieh, J. Y. Pieh, Y. K. Chang, K. C. Kuo, P. K. Tseng, J. F. Lee, S. C. Chung, C. I. Chen, K. L. Tsang, and C. T. Chen
pp.
16641-16645
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Thermopower and high-pressure electrical conductivity measurements of template synthesized polypyrrole
I. Orgzall, B. Lorenz, S. T. Ting, P.-H Hor, V. Menon, Ch. R. Martin, and H. D. Hochheimer
pp.
16654-16658
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Carbon atomic chains in strong electric fields
L. Lou and P. Nordlander
pp.
16659-16662
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Semiconductors I: bulk
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Ion-beam processing of silicon at keV energies: A molecular-dynamics study
M.-J. Caturla, T. Díaz de la Rubia, L. A. Marqués, and G. H. Gilmer
pp.
16683-16695
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Higher-interband electroreflectance of long-range ordered Ga0.5In0.5P
Takashi Kita, Kenichi Yamashita, and Taneo Nishino
pp.
16714-16718
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Nitrogen interstitials in diamond
I. Kiflawi, Alison Mainwood, H. Kanda, and D. Fisher
pp.
16719-16726
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Pulse-propagation-induced higher orders of diffraction in transient four-wave mixing with semiconductors
B. Lummer, J.-M. Wagner, R. Heitz, A. Hoffmann, I. Broser, and R. Zimmermann
pp.
16727-16732
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Semiconductors II: surfaces, interfaces, microstructures, and related topics
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Electronic structure of imperfect Si/Ge heterostructures
M. J. Shaw, P. R. Briddon, and M. Jaros
pp.
16781-16785
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Dynamical phenomena in Fibonacci semiconductor superlattices
Enrique Diez, Francisco Domínguez-Adame, Enrique Maciá, and Angel Sánchez
pp.
16792-16798
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Deep-level transient spectroscopy study of narrow SiGe quantum wells with high Ge content
K. Schmalz, I. N. Yassievich, E. J. Collart, and D. J. Gravesteijn
pp.
16799-16812
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Skyrmions in the quantum Hall effect at finite Zeeman coupling
A. G. Green, I. I. Kogan, and A. M. Tsvelik
pp.
16838-16849
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Skyrmions and edge-spin excitations in quantum Hall droplets
J. H. Oaknin, L. Martín-Moreno, and C. Tejedor
pp.
16850-16859
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Bulk versus edge in the quantum Hall effect
Y.-C. Kao and D.-H. Lee
pp.
16903-16906
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Two-dimensional excitonic emission in InAs submonolayers
Z. L. Yuan, Z. Y. Xu, B. Z. Zheng, J. Z. Xu, S. S. Li, Weikun Ge, Y. Wang, J. Wang, L. L. Chang, P. D. Wang, C. M. Sotomayor Torres, and N. N. Ledentsov
pp.
16919-16924
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Electro-optic exciton nonlinearities in Zn1-xCdxSe/ZnSe multiple quantum wells
P. V. Giugno, M. De Vittorio, R. Rinaldi, R. Cingolani, F. Quaranta, L. Vanzetti, L. Sorba, and A. Franciosi
pp.
16934-16938
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Exciton localization and decomposition dynamics in cuprous halide nanocrystals
Tsuyoshi Okuno, Hiroshi Miyajima, Akihiro Satake, and Yasuaki Masumoto
pp.
16952-16957
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Coverage-dependent thermal reactions of digermane on Si(100)-(2×1)
Deng-Sung Lin, Kuang-Hsin Huang, Tun-Wen Pi, and Rong-Tzong Wu
pp.
16958-16964
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Semiconducting Mg2Si thin films prepared by molecular-beam epitaxy
John E. Mahan, André Vantomme, Guido Langouche, and James P. Becker
pp.
16965-16971
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Ballistic-electron-emission spectroscopy of Au/Si and Au/GaAs interfaces: Low-temperature measurements and ballistic models
D. K. Guthrie, L. E. Harrell, G. N. Henderson, P. N. First, T. K. Gaylord, E. N. Glytsis, and R. E. Leibenguth
pp.
16972-16982
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Exciton properties in p-type GaAs/AlxGa1-xAs quantum wells in the high doping regime
A. C. Ferreira, P. O. Holtz, B. E. Sernelius, I. Buyanova, B. Monemar, O. Mauritz, U. Ekenberg, M. Sundaram, K. Campman, J. L. Merz, and A. C. Gossard
pp.
16989-16993
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Excitons bound at interacting acceptors in AlxGa1-xAs/GaAs quantum wells
A. C. Ferreira, P. O. Holtz, B. Monemar, M. Sundaram, K. Campman, J. L. Merz, and A. C. Gossard
pp.
16994-16997
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Center of mass quantization of excitons in Zn1-xCdxSe/ZnSe quantum-wells
D. Greco, R. Cingolani, A. D’Andrea, N. Tommasini, L. Vanzetti, and A. Franciosi
pp.
16998-17002
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Properties of lateral Nb contacts to a two-dimensional electron gas in an In0.77Ga0.23As/InP heterostructure
K. Neurohr, A. A. Golubov, Th. Klocke, J. Kaufmann, Th. Schäpers, J. Appenzeller, D. Uhlisch, A. V. Ustinov, M. Hollfelder, H. Lüth, and A. I. Braginski
pp.
17018-17028
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Surface physics, low-dimensional systems, and related topics
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Surface mobility of Ag on Pd(100) measured by specular helium scattering
C. Félix, G. Vandoni, W. Harbich, J. Buttet, and R. Monot
pp.
17039-17050
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Molecular orientational vibrations in monolayer systems
Zhenghao Wang and Changde Gong
pp.
17067-17077
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Modeling of Ir adatoms on Ir surfaces
C. M. Chang, C. M. Wei, and S. P. Chen
pp.
17083-17096
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Pokrovsky-Talapov commensurate-incommensurate transition in the CO/Pd(100) system
R. Schuster, I. K. Robinson, K. Kuhnke, S. Ferrer, J. Alvarez, and K. Kern
pp.
17097-17101
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Adsorption isotherm study of multilayer N2 films on BN
Praful Shrestha and Aldo D. Migone
pp.
17102-17107
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c-axis resistivity of MoCl5 graphite intercalation compounds
Masatsugu Suzuki, Chaoli Lee, Itsuko S. Suzuki, Keiko Matsubara, and Ko Sugihara
pp.
17128-17140
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Resonant charge transfer in grazing scattering of alkali-metal ions from an Al(111) surface
A. G. Borisov, D. Teillet-Billy, J. P. Gauyacq, H. Winter, and G. Dierkes
pp.
17166-17174
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Multiplet structure in high-resolution and spin-resolved x-ray photoemission from gadolinium
W. J. Lademan, A. K. See, L. E. Klebanoff, and Gerrit van der Laan
pp.
17191-17198
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