Physical Review B
– 15 July 1996
Volume 54, Issue 4
RAPID COMMUNICATIONS
RAPID COMMUNICATIONS
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Stability and charge transfer of C3B ordered structures
Qiang Wang, Long-Qing Chen, and James F. Annett
pp.
R2271-R2275
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Electron focusing in Ag and W single crystals
J. Heil, M. Primke, A. Böhm, P. Wyder, B. Wolf, J. Major, and P. Keppler
pp.
R2280-R2283
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Virtual states and photon-assisted tunneling
B. J. Keay and C. Aversa
pp.
R2284-R2287
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Weak localization of exciton polaritons in a quantum well
Eiichi Hanamura and Theodore B. Norris
pp.
R2292-R2295
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Long-lived charged multiple-exciton complexes in strong magnetic fields
J. J. Palacios, D. Yoshioka, and A. H. MacDonald
pp.
R2296-R2299
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Electronic structure of InAs/GaAs self-assembled quantum dots
M. A. Cusack, P. R. Briddon, and M. Jaros
pp.
R2300-R2303
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Evidence of spontaneous formation of steps on silicon (100)
Lei Zhong, Akimichi Hojo, Yoshiaki Matsushita, Yoshiro Aiba, Kenro Hayashi, Ryuji Takeda, Hirao Shirai, Hiroyoki Saito, Junichi Matsushita, and Jun Yoshikawa
pp.
R2304-R2307
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Interchain photoluminescence in poly(phenylene vinylene) derivatives
E. M. Conwell, J. Perlstein, and S. Shaik
pp.
R2308-R2310
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Magnetic-field-induced resonant tunneling in parallel two-dimensional systems
T. Ihn, H. Carmona, P. C. Main, L. Eaves, and M. Henini
pp.
R2315-R2318
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Electric-field domain formation in type-II superlattices
H. Mimura, M. Hosoda, N. Ohtani, K. Tominaga, K. Fujita, T. Watanabe, H. T. Grahn, and K. Fujiwara
pp.
R2323-R2326
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Experimental indication for supercurrents carried by opened transport channels
L. C. Mur, C. J. P. M. Harmans, J. E. Mooij, J. F. Carlin, A. Rudra, and M. Ilegems
pp.
R2327-R2330
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Dielectric enhancement of excitons in near-surface quantum wells
L. V. Kulik, V. D. Kulakovskii, M. Bayer, A. Forchel, N. A. Gippius, and S. G. Tikhodeev
pp.
R2335-R2338
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Incorporation of alkali metals on Pt(111)
J. Lehmann, P. Roos, and E. Bertel
pp.
R2347-R2350
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ARTICLES
Electronic structure: wide-band, narrow-band, and strongly correlated systems
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Onsager relations and hydrodynamic balance equations
M. W. Wu, H. L. Cui, and N. J. M. Horing
pp.
2351-2359
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Energy-loss function in the two-pair approximation for the electron liquid
M. E. Bachlechner, A. Holas, H. M. Böhm, and A. Schinner
pp.
2360-2373
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Lowest-order corrections to the RPA polarizability and GW self-energy of a semiconducting wire
H. J. de Groot, R. T. M. Ummels, P. A. Bobbert, and W. van Haeringen
pp.
2374-2380
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Ab initio investigation of the electronic properties of planar and twisted polyparaphenylenes
Benoît Champagne, David H. Mosley, Joseph G. Fripiat, and Jean-Marie André
pp.
2381-2389
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Theoretical and experimental study of positron annihilation with core electrons in solids
M. Alatalo, B. Barbiellini, M. Hakala, H. Kauppinen, T. Korhonen, M. J. Puska, K. Saarinen, P. Hautojärvi, and R. M. Nieminen
pp.
2397-2409
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Semiempirical Hartree-Fock calculations for KNbO3
R. I. Eglitis, A. V. Postnikov, and G. Borstel
pp.
2421-2427
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Electronic structure and optical properties of WO3, LiWO3, NaWO3, and HWO3
Anders Hjelm, Claes G. Granqvist, and John M. Wills
pp.
2436-2445
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Complete band-structure determination of the quasi-two-dimensional Fermi-liquid reference compound TiTe2
R. Claessen, R. O. Anderson, G.-H. Gweon, J. W. Allen, W. P. Ellis, C. Janowitz, C. G. Olson, Z. X. Shen, V. Eyert, M. Skibowski, K. Friemelt, E. Bucher, and S. Hüfner
pp.
2453-2465
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Nonlinear Berry phases for simple band representations
P. Zeiner, R. Dirl, and B. L. Davies
pp.
2466-2470
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Semiconductors I: bulk
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k⋅p method for strained wurtzite semiconductors
S. L. Chuang and C. S. Chang
pp.
2491-2504
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Evaluation of some basic positron-related characteristics of SiC
G. Brauer, W. Anwand, E.-M. Nicht, J. Kuriplach, M. Šob, N. Wagner, P. G. Coleman, M. J. Puska, and T. Korhonen
pp.
2512-2517
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Free exciton emission in GaN
D. Kovalev, B. Averboukh, D. Volm, B. K. Meyer, H. Amano, and I. Akasaki
pp.
2518-2522
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Optically active erbium centers in silicon
H. Przybylinska, W. Jantsch, Yu. Suprun-Belevitch, M. Stepikhova, L. Palmetshofer, G. Hendorfer, A. Kozanecki, R. J. Wilson, and B. J. Sealy
pp.
2532-2547
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Experimental evidence for luminescence from silicon oxide layers in oxidized porous silicon
G. G. Qin, H. Z. Song, B. R. Zhang, J. Lin, J. Q. Duan, and G. Q. Yao
pp.
2548-2555
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Cohesive energies of cubic III-V semiconductors
Beate Paulus, Peter Fulde, and Hermann Stoll
pp.
2556-2560
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Phonon-induced dephasing of localized optical excitations
D. Brinkmann, F. Rossi, S. W. Koch, and P. Thomas
pp.
2561-2570
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Semiconductors II: surfaces, interfaces, microstructures, and related topics
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Self-diffusion on Si(111) surfaces
A. V. Latyshev, A. B. Krasilnikov, and A. L. Aseev
pp.
2586-2589
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Quantum conductance of carbon nanotubes with defects
Leonor Chico, Lorin X. Benedict, Steven G. Louie, and Marvin L. Cohen
pp.
2600-2606
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Recombination dynamics of localized excitons in a CdSe/ZnSe/ZnSxSe1-x single-quantum-well structure
Shigeo Yamaguchi, Yoichi Kawakami, Shizuo Fujita, Shigeo Fujita, Yoichi Yamada, Tomobumi Mishina, and Yasuaki Masumoto
pp.
2629-2634
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Quantum transport through a periodic scatterer in a magnetic field
Shinji Nonoyama and Atsunobu Nakamura
pp.
2635-2641
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Low-temperature atomic dynamics of the Si(111)-7×7
I. Štich, J. Kohanoff, and K. Terakura
pp.
2642-2653
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Plasmon excitations and accumulation layers in heavily doped InAs(001)
G. R. Bell, C. F. McConville, and T. S. Jones
pp.
2654-2661
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Hole confinement in boron δ-doped silicon quantum wells studied by deep-level transient spectroscopy
Jian-hong Zhu, Da-wei Gong, Bo Zhang, Fang Lu, Chi Sheng, Heng-hui Sun, and Xun Wang
pp.
2662-2666
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Temperature dependence of the magnetoresistance of InxGa1-xAs antidot lattices
J. Heremans, B. K. Fuller, C. M. Thrush, and V. Bayot
pp.
2685-2690
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Topological disorder and conductance fluctuations in thin films
Kristin M. Abkemeier and David G. Grier
pp.
2723-2727
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Superlattice effects induced by atomic ordering on GaxIn1-xP Raman modes
A. Hassine, J. Sapriel, P. Le Berre, M. A. Di Forte-Poisson, F. Alexandre, and M. Quillec
pp.
2728-2732
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Exciton localization, photoluminescence spectra, and interface roughness in thin quantum wells
U. Jahn, S. H. Kwok, M. Ramsteiner, R. Hey, H. T. Grahn, and E. Runge
pp.
2733-2738
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Mesoscopic charge-density-wave junctions
Mark I. Visscher and Gerrit E. W. Bauer
pp.
2798-2805
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Reflection of finite-width edge channels
R. J. F. van Haren, A. J. Markvoort, A. J. C. van Rijswijk, F. A. P. Blom, and J. H. Wolter
pp.
2806-2812
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Surface physics, low-dimensional systems, and related topics
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Vibrational signatures for low-energy intermediate-sized Si clusters
Mark R. Pederson, Koblar Jackson, D. V. Porezag, Z. Hajnal, and Th. Frauenheim
pp.
2863-2867
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Theoretical study of O adlayers on Ru(0001)
C. Stampfl and M. Scheffler
pp.
2868-2872
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Electronic specific heat of single-walled carbon nanotubes
M. F. Lin and Kenneth W. -K. Shung
pp.
2896-2900
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Electron-energy losses in hemispherical targets
J. Aizpurua, A. Rivacoba, and S. P. Apell
pp.
2901-2909
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Oscillatory interaction of steps on W{110}
Wei Xu, James B. Adams, and T. L. Einstein
pp.
2910-2916
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Determination of the electronic density of states near buried interfaces: Application to Co/Cu multilayers
A. Nilsson, J. Stöhr, T. Wiell, M. Aldén, P. Bennich, N. Wassdahl, M. G. Samant, S. S. P. Parkin, N. Mårtensson, J. Nordgren, B. Johansson, and H. L. Skriver
pp.
2917-2921
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Kinetics of nucleation-dominated step flow
Christopher Roland and George H. Gilmer
pp.
2931-2936
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Surface polaritons in layered structures of anisotropic media
R. N. Costa Filho, M. G. Cottam, E. L. Albuquerque, and G. A. Farias
pp.
2949-2953
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