• BRIEF REPORTS
  • Electronic structure: wide-band, narrow-band, and strongly correlated systems
  • Semiconductors I: bulk
  • Semiconductors II: surfaces, interfaces, microstructures, and related topics
  • Surface physics, low-dimensional systems, and related topics
• ARTICLES
  • Electronic structure: wide-band, narrow-band, and strongly correlated systems
  • Semiconductors I: bulk
  • Semiconductors II: surfaces, interfaces, microstructures, and related topics
  • Surface physics, low-dimensional systems, and related topics
• COMMENTS
• ERRATA

BRIEF REPORTS

Electronic structure: wide-band, narrow-band, and strongly correlated systems

•	Energy dependence of quasiparticle damping at a metal surface J. J. Deisz and A. G. Eguiluz pp. 9195-9199 [View PDF (141 kB) or Buy this Article (Use Article Pack) ]

•	Calculated specific-heat coefficients of nonmagnetic closed-packed metals M. Peder, R. H. Mutlu, and N. Tugluoglu pp. 9200-9202 [View PDF (42 kB) or Buy this Article (Use Article Pack) ]

•	Electronic and magnetic transitions in a multiband model for La2NiO4 Priya Mahadevan, K. Sheshadri, D. D. Sarma, H. R. Krishnamurthy, and Rahul Pandit pp. 9203-9206 [View PDF (126 kB) or Buy this Article (Use Article Pack) ]

•

CeB6 and CeCu6 single crystals probed by resonant photoemission spectroscopy: A comparison between the two electronic structures G. Chiaia, O. Tjernberg, L. Du`o, S. De Rossi, P. Vavassori, I. Lindau, T. Takahashi, S. Kunii, T. Komatsubara, D. Cocco, S. Lizzit, and G. Paolucci pp. 9207-9210 [View PDF (105 kB) or Buy this Article (Use Article Pack) ]

•	Self-interaction correction and relativistic exchange on the core states and core hyperfine fields in Fe, Co, and Ni L. Severin, M. Richter, and L. Steinbeck pp. 9211-9214 [View PDF (110 kB) or Buy this Article (Use Article Pack) ]

•	Band structure and optical properties of HgI2 A. K. Solanki, Arti Kashyap, T. Nautiyal, S. Auluck, and M. A. Khan pp. 9215-9218 [View PDF (134 kB) or Buy this Article (Use Article Pack) ]

•	Hall effect of charge carriers in a correlated system P. Prelovsek pp. 9219-9222 [View PDF (125 kB) or Buy this Article (Use Article Pack) ]

•	Statistics of the charging spectrum of a two-dimensional Coulomb-glass island A. A. Koulakov, F. G. Pikus, and B. I. Shklovskii pp. 9223-9226 [View PDF (112 kB) or Buy this Article (Use Article Pack) ]

•	Phase transitions in L1-xCaxMnO3 (L=Pr,Nd) probed by thermopower and resistivity measurements B. Fisher, L. Patlagan, G. M. Reisner, and A. Knizhnik pp. 9227-9230 [View PDF (181 kB) or Buy this Article (Use Article Pack) ]

Semiconductors I: bulk

•	Nonorthogonal tight-binding molecular-dynamics scheme for silicon with improved transferability Madhu Menon and K. R. Subbaswamy pp. 9231-9234 [View PDF (113 kB) or Buy this Article (Use Article Pack) ]

•	Thermally assisted tunneling of hydrogen in silicon: A path-integral Monte Carlo study Carlos P. Herrero pp. 9235-9238 [View PDF (113 kB) or Buy this Article (Use Article Pack) ]

•	Spin-orbit effects on the band structure and Fermi surface of ErAs and ErxSc1-xAs Walter R. L. Lambrecht, Benjamin Segall, Andrey G. Petukhov, Ria Bogaerts, and Fritz Herlach pp. 9239-9242 [View PDF (171 kB) or Buy this Article (Use Article Pack) ]

•	Storage of electrons in shallow donor excited states of GaP:Te S. D. Ganichev, W. Raab, E. Zepezauer, W. Prettl, and I. N. Yassievich pp. 9243-9246 [View PDF (107 kB) or Buy this Article (Use Article Pack) ]

•	Beat-wave generation of plasmons in semiconductor plasmas V. I. Berezhiani and S. M. Mahajan pp. 9247-9250 [View PDF (98 kB) or Buy this Article (Use Article Pack) ]

•	Temperature dependence of the energies and broadening parameters of the interband excitonic transitions in wurtzite GaN C. F. Li, Y. S. Huang, L. Malikova, and Fred H. Pollak pp. 9251-9254 [View PDF (94 kB) or Buy this Article (Use Article Pack) ]

•	Ultrafast switch-off of a vertical-cavity semiconductor laser S. G. Hense and M. Wegener pp. 9255-9258 [View PDF (141 kB) or Buy this Article (Use Article Pack) ]

Semiconductors II: surfaces, interfaces, microstructures, and related topics

•	Dissociated screw dislocation which can relieve strain energyin the epitaxial layer of GeSi on Si(001) Xue-Yuan Wan, Jun-Wu Liang, Ming-Liang Liu, and Xiao-Jun Jin pp. 9259-9262 [View PDF (546 kB) or Buy this Article (Use Article Pack) ]

•	Comparison of models for Raman spectra of Si nanocrystals Jian Zi, Kaiming Zhang, and Xide Xie pp. 9263-9266 [View PDF (83 kB) or Buy this Article (Use Article Pack) ]

•	Atomic structure and formation kinetics of the Sb/Si(111)-5sqrt[3]×5sqrt[3] surface Kang-Ho Park, Jeong Sook Ha, Wan Soo Yun, El-Hang Lee, Jae-Yel Yi, and Seong-Ju Park pp. 9267-9270 [View PDF (367 kB) or Buy this Article (Use Article Pack) ]

•	Elastic scattering of excitons by excitons in semiconducting quantum-well structures: Finite confining-potential model Tong San Koh, Yuan Ping Feng, and Harold N. Spector pp. 9271-9274 [View PDF (211 kB) or Buy this Article (Use Article Pack) ]

•	Magnetoluminescence from strain-induced quantum dots M. Braskén, M. Lindberg, and J. Tulkki pp. 9275-9278 [View PDF (171 kB) or Buy this Article (Use Article Pack) ]

•	Polaronic enhancement in the ground-state energy of an electron bound to a Coulomb impurity in a parabolic quantum dot Soma Mukhopadhyay and Ashok Chatterjee pp. 9279-9281 [View PDF (109 kB) or Buy this Article (Use Article Pack) ]

•	Absence of unstable zero-field intersubband spin excitations of dilute electron bilayers A. S. Plaut, A. Pinczuk, P. I. Tamborenea, B. S. Dennis, L. N. Pfeiffer, and K. W. West pp. 9282-9285 [View PDF (114 kB) or Buy this Article (Use Article Pack) ]

•	Electronic structure of natural self-organized PbS-Bi2S3 twinning superlattices Z. Ikonic-acute, G. P. Srivastava, and J. C. Inkson pp. 9286-9289 [View PDF (134 kB) or Buy this Article (Use Article Pack) ]

•	Excitonic wave packets in In0.135 Ga0.865 As/GaAs quantum wires W. Braun, M. Bayer, A. Forchel, H. Zull, J. P. Reithmaier, A. I. Filin, S. N. Walck, and T. L. Reinecke pp. 9290-9293 [View PDF (121 kB) or Buy this Article (Use Article Pack) ]

•	Interlayer charge transfer in double-quantum-well systems S. J. Papadakis, J. P. Lu, M. Shayegan, S. R. Parihar, and S. A. Lyon pp. 9294-9297 [View PDF (88 kB) or Buy this Article (Use Article Pack) ]

•	Spin splitting and weak localization in (110) GaAs/AlxGa1-xAs quantum wells T. Hassenkam, S. Pedersen, K. Baklanov, A. Kristensen, C. B. Sorensen, P. E. Lindelof, F. G. Pikus, and G. E. Pikus pp. 9298-9301 [View PDF (146 kB) or Buy this Article (Use Article Pack) ]

•	Persistent currents in mesoscopic Fibonacci rings G. J. Jin, Z. D. Wang, A. Hu, and S. S. Jiang pp. 9302-9305 [View PDF (150 kB) or Buy this Article (Use Article Pack) ]

•	Tunneling between two Luttinger liquids with long-range interaction Maura Sassetti and Bernhard Kramer pp. 9306-9309 [View PDF (125 kB) or Buy this Article (Use Article Pack) ]

•	Nonlinear resonant tunneling in systems coupled to quantum reservoirs Carlo Presilla and Johannes Sjöstrand pp. 9310-9313 [View PDF (170 kB) or Buy this Article (Use Article Pack) ]

•	Transport in asymmetric multiple-barrier magnetic nanostructures Yong Guo, Binglin Gu, Wenhui Duan, and Yu Zhang pp. 9314-9317 [View PDF (140 kB) or Buy this Article (Use Article Pack) ]

•	Stochastic resonance and nonlinear response in a dissipative quantum two-state system T. P. Pareek, Mangal C. Mahato, and A. M. Jayannavar pp. 9318-9321 [View PDF (136 kB) or Buy this Article (Use Article Pack) ]

•	Tunneling zero-bias anomaly in the quasiballistic regime A. M. Rudin, I. L. Aleiner, and L. I. Glazman pp. 9322-9325 [View PDF (133 kB) or Buy this Article (Use Article Pack) ]

•	Laughlin liquid to charge-density-wave transition at high Landau levels M. M. Fogler and A. A. Koulakov pp. 9326-9329 [View PDF (128 kB) or Buy this Article (Use Article Pack) ]

•	Phase diagram of the two-dimensional quantum electron freezing with external impurities S. T. Chui and B. Tanatar pp. 9330-9332 [View PDF (135 kB) or Buy this Article (Use Article Pack) ]

•	Magnetophonon resonance in the energy relaxation of electrons in a quantum well Xiaoguang Wu and F. M. Peeters pp. 9333-9335 [View PDF (105 kB) or Buy this Article (Use Article Pack) ]

•	Observation of coherent acoustic phonons in Fibonacci superlattices Kohji Mizoguchi, Kei Matsutani, Shin-ichi Nakashima, Thomas Dekorsy, Heinrich Kurz, and Masaaki Nakayama pp. 9336-9339 [View PDF (186 kB) or Buy this Article (Use Article Pack) ]

•	Coupling between the transverse and longitudinal componentsof an electron in resonant tunneling Xue-Hua Wang, Ben-Yuan Gu, and Guo-Zhen Yang pp. 9340-9343 [View PDF (186 kB) or Buy this Article (Use Article Pack) ]

Surface physics, low-dimensional systems, and related topics

•	Theory for the time evolution of nonlinear Rayleigh waves in an isotropic solid Vitalyi E. Gusev, Walter Lauriks, and Jan Thoen pp. 9344-9347 [View PDF (114 kB) or Buy this Article (Use Article Pack) ]

•	Permeation flux of hydrogen through plasma facing materials W. M. Shu and K. Watanabe pp. 9348-9351 [View PDF (91 kB) or Buy this Article (Use Article Pack) ]

•	Atomic details of step flow growth on Si(001) J. van Wingerden, A. van Dam, M. J. Haye, P. M. L. O. Scholte, and F. Tuinstra pp. 9352-9355 [View PDF (435 kB) or Buy this Article (Use Article Pack) ]

•	Scanning-tunneling-microscopy images of oxygen adsorption on the Si(001) surface Toshihiro Uchiyama and Masaru Tsukada pp. 9356-9359 [View PDF (175 kB) or Buy this Article (Use Article Pack) ]

•	Growth of C60 on Cu(110) and Ni(110) surfaces: C60-induced interfacial roughening P. W. Murray, M. Ø. Pedersen, E. Lægsgaard, I. Stensgaard, and F. Besenbacher pp. 9360-9363 [View PDF (377 kB) or Buy this Article (Use Article Pack) ]

•	Negative differential resistance at atomic contacts N. D. Lang pp. 9364-9366 [View PDF (70 kB) or Buy this Article (Use Article Pack) ]

•	Role of chain length on the surface chemistry of dienes studiedby scanning tunneling microscopy D. Shachal, Y. Manassen, and E. Ter-Ovanesyan pp. 9367-9370 [View PDF (511 kB) or Buy this Article (Use Article Pack) ]

•	Fluctuation properties of interfaces and membranes bounded by self-affine surfaces George Palasantzas and Godelieve Backx pp. 9371-9374 [View PDF (132 kB) or Buy this Article (Use Article Pack) ]

•	Aluminum break-point contacts Martina Heinemann and R. A. de Groot pp. 9375-9378 [View PDF (235 kB) or Buy this Article (Use Article Pack) ]

•	Dispersion of electrostatic surface plasmons W. L. Schaich pp. 9379-9382 [View PDF (117 kB) or Buy this Article (Use Article Pack) ]

•	Electron localization in a percolating network: An ESR study of carbon-black/polymer composites L. J. Adriaanse, H. B. Brom, M. A. J. Michels, and J. C. M. Brokken-Zijp pp. 9383-9386 [View PDF (114 kB) or Buy this Article (Use Article Pack) ]

•	Condensation effects in K-shell excitation spectra of neon films P. Wiethoff, H.-U. Ehrke, B. Kassühlke, C. Keller, W. Wurth, D. Menzel, and P. Feulner pp. 9387-9390 [View PDF (88 kB) or Buy this Article (Use Article Pack) ]

ARTICLES

Electronic structure: wide-band, narrow-band, and strongly correlated systems

•	Unique characteristics of cold cathode carbon-nanotube-matrix field emitters Philip G. Collins and A. Zettl pp. 9391-9399 [View PDF (168 kB) or Buy this Article (Use Article Pack) ]

•	Evaluation of the screened Korringa-Kohn-Rostoker method for accurate and large-scale electronic-structure calculations Rudolf Zeller pp. 9400-9408 [View PDF (167 kB) or Buy this Article (Use Article Pack) ]

•	Stability and charge transfer in the misfit compound (LaS)(SrS)0.2CrS2: Ab initio band-structure calculations Laurent Cario, Dirk Johrendt, Alain Lafond, Claudia Felser, Alain Meerschaut, and Jean Rouxel pp. 9409-9414 [View PDF (227 kB) or Buy this Article (Use Article Pack) ]

•	Density-functional calculations for rare-earth atoms and ions J. Forstreuter, L. Steinbeck, M. Richter, and H. Eschrig pp. 9415-9421 [View PDF (147 kB) or Buy this Article (Use Article Pack) ]

•	Potential-locality constraint in determining an idempotent density matrix from diffraction experiment A. Holas and N. H. March pp. 9422-9431 [View PDF (229 kB) or Buy this Article (Use Article Pack) ]

•	Gradient-corrected correlation with nearly exact Kohn-Sham exchange: Calculations for Si and Ge D. M. Bylander and Leonard Kleinman pp. 9432-9438 [View PDF (123 kB) or Buy this Article (Use Article Pack) ]

•	Mean-field approach to antiferromagnetic domains in the doped Hubbard model Edwin Langmann and Mats Wallin pp. 9439-9451 [View PDF (334 kB) or Buy this Article (Use Article Pack) ]

•	Nonanalytic behavior of the spin susceptibility in clean Fermi systems D. Belitz, T. R. Kirkpatrick, and Thomas Vojta pp. 9452-9462 [View PDF (234 kB) or Buy this Article (Use Article Pack) ]

•	Multifractal analysis of the metal-insulator transition in anisotropic systems Frank Milde, Rudolf A. Römer, and Michael Schreiber pp. 9463-9469 [View PDF (365 kB) or Buy this Article (Use Article Pack) ]

•	Many-body effects in the one-dimensional electron gas with short-range interaction A. Gold pp. 9470-9481 [View PDF (298 kB) or Buy this Article (Use Article Pack) ]

•	Transmission and spectral aspects of tight-binding Hamiltonians for the counting quantum Turing machine Paul Benioff pp. 9482-9494 [View PDF (405 kB) or Buy this Article (Use Article Pack) ]

•	Photorefractive properties of Bi4Ti3O12 Xuefeng Yue, Jingjun Xu, F. Mersch, R. A. Rupp, and E. Krätzig pp. 9495-9502 [View PDF (214 kB) or Buy this Article (Use Article Pack) ]

•	Photonic band structure of bcc colloidal crystals Ranjit D. Pradhan, John A. Bloodgood, and George H. Watson pp. 9503-9507 [View PDF (207 kB) or Buy this Article (Use Article Pack) ]

•	Interpretation of preedge features in the Ti and S K-edge x-ray-absorption near-edge spectrain the layered disulfides TiS2 and TaS2 Z. Y. Wu, G. Ouvrard, P. Moreau, and C. R. Natoli pp. 9508-9513 [View PDF (207 kB) or Buy this Article (Use Article Pack) ]

•	Electronic-correlation effects in the x-ray-photoemission spectra of NiS2 Luigi Sangaletti, Fulvio Parmigiani, Tineke Thio, and James W. Bennett pp. 9514-9519 [View PDF (185 kB) or Buy this Article (Use Article Pack) ]

•	2p resonant photoemission study of TiO2s K. C. Prince, V. R. Dhanak, P. Finetti, J. F. Walsh, R. Davis, C. A. Muryn, H. S. Dhariwal, G. Thornton, and G. van der Laan pp. 9520-9523 [View PDF (126 kB) or Buy this Article (Use Article Pack) ]

•	Two interacting Hofstadter butterflies Armelle Barelli, Jean Bellissard, Philippe Jacquod, and Dima L. Shepelyansky pp. 9524-9533 [View PDF (412 kB) or Buy this Article (Use Article Pack) ]

•	Photoinduced anomalous heat generation in AgCl and AgBr single crystals at liquid-helium temperature Yasuhiro Kondo, Ikuma Goto, and Norio Sakaida pp. 9534-9543 [View PDF (275 kB) or Buy this Article (Use Article Pack) ]

•	Gaussian solution of a charge-density-wave model Federico Corberi pp. 9544-9549 [View PDF (157 kB) or Buy this Article (Use Article Pack) ]

•	Electron energy loss in composite systems J. M. Pitarke, J. B. Pendry, and P. M. Echenique pp. 9550-9557 [View PDF (209 kB) or Buy this Article (Use Article Pack) ]

•	Configuration-interaction approach to the two-dimensional Hubbard model near half-filling Barry Friedman and Gregory Levine pp. 9558-9563 [View PDF (185 kB) or Buy this Article (Use Article Pack) ]

Semiconductors I: bulk

•	Characteristics, behavior, and identification of electron-induced defects in GaP T. Neffati and J. C. Bourgoin pp. 9564-9570 [View PDF (193 kB) or Buy this Article (Use Article Pack) ]

•	Point-defect complexes and broadband luminescence in GaN and AlN T. Mattila and R. M. Nieminen pp. 9571-9576 [View PDF (123 kB) or Buy this Article (Use Article Pack) ]

•	Phosphorous-diffusion gettering in the presence of a nonequilibrium concentrationof silicon interstitials: A quantitative model E. Spiecker, M. Seibt, and W. Schröter pp. 9577-9583 [View PDF (134 kB) or Buy this Article (Use Article Pack) ]

•	Transport properties of silicon implanted with bismuth E. Abramof, A. Ferreira da Silva, Bo E. Sernelius, J. P. de Souza, and H. Boudinov pp. 9584-9589 [View PDF (142 kB) or Buy this Article (Use Article Pack) ]

•	Capacitance-transient-spectroscopy model for defects with two charge states E. F. Ferrari, M. Koehler, and I. A. Hümmelgen pp. 9590-9597 [View PDF (208 kB) or Buy this Article (Use Article Pack) ]

•	Divacancy and resistivity profiles in n-type Si implanted with 1.15-MeV protons H. Kauppinen, C. Corbel, K. Skog, K. Saarinen, T. Laine, P. Hautojärvi, P. Desgardin, and E. Ntsoenzok pp. 9598-9608 [View PDF (318 kB) or Buy this Article (Use Article Pack) ]

•	Microscopic nature and optical properties of metastable defects in electron-irradiated GaAs S. Kuisma, K. Saarinen, P. Hautojärvi, and C. Corbel pp. 9609-9620 [View PDF (299 kB) or Buy this Article (Use Article Pack) ]

•	Light-induced defects in hydrogenated amorphous silicon studied by the constant-photocurrent method J. A. Schmidt, R. Arce, R. H. Buitrago, and R. R. Koropecki pp. 9621-9627 [View PDF (173 kB) or Buy this Article (Use Article Pack) ]

•	Symmetry-induced anisotropy of two-photon absorption spectra in zinc-blende semiconductors Misao Murayama and Takashi Nakayama pp. 9628-9636 [View PDF (302 kB) or Buy this Article (Use Article Pack) ]

•	Positron-annihilation study of vacancy defects in InAs J. Mahony and P. Mascher pp. 9637-9641 [View PDF (100 kB) or Buy this Article (Use Article Pack) ]

•	Pressure dependence of defects and p-d hybridization in chalcopyrite semiconductors In-Hwan Choi and Peter Y. Yu pp. 9642-9648 [View PDF (219 kB) or Buy this Article (Use Article Pack) ]

•	Vibrational broadening of x-ray emission spectra: A first-principles study on diamond Kurt A. Mäder and Stefano Baroni pp. 9649-9658 [View PDF (260 kB) or Buy this Article (Use Article Pack) ]

•	Theoretical study of the high-pressure phase stability of GaP, InP, and InAs A. Mujica and R. J. Needs pp. 9659-9670 [View PDF (384 kB) or Buy this Article (Use Article Pack) ]

•	Line-shape analysis of differential transmission spectra in the coherent regime K. El Sayed and C. J. Stanton pp. 9671-9678 [View PDF (248 kB) or Buy this Article (Use Article Pack) ]

•	Valence-band structure of cubic CdS as determined by angle-resolved photoemission A. P. J. Stampfl, Ph. Hofmann, O. Schaff, and A. M. Bradshaw pp. 9679-9684 [View PDF (154 kB) or Buy this Article (Use Article Pack) ]

•	Photogeneration and transport of charge carriers in a porphyrin p/n heterojunction Tom J. Savenije, Ellen Moons, Gerrit K. Boschloo, Albert Goossens, and Tjeerd J. Schaafsma pp. 9685-9692 [View PDF (213 kB) or Buy this Article (Use Article Pack) ]

Semiconductors II: surfaces, interfaces, microstructures, and related topics

•	Transmission-ion-channeling studies of the silicon (111) monohydride surface W. R. Wampler pp. 9693-9698 [View PDF (181 kB) or Buy this Article (Use Article Pack) ]

•	Anisotropic kinetics of vacancy diffusion and annihilation on Si(001) surfaces studied by scanning reflection electron microscopy Heiji Watanabe and Masakazu Ichikawa pp. 9699-9705 [View PDF (567 kB) or Buy this Article (Use Article Pack) ]

•	Theoretical model for early stages of porous silicon formationfrom n- and p-type silicon substrates Alexandre Valance pp. 9706-9715 [View PDF (237 kB) or Buy this Article (Use Article Pack) ]

•	Observation of Ga segregation in the growth of InAs overlayers on GaAs(110) using core-level photoelectron spectroscopy Z. Q. He, L. Ilver, J. Kanski, P. O. Nilsson, and U. O. Karlsson pp. 9716-9721 [View PDF (138 kB) or Buy this Article (Use Article Pack) ]

•	Application of Bragg-confined semiconductor structures for higher-energy resonant intersubband second-harmonic generation D. Indjin, V. Milanovic-acute, and Z. Ikonic-acute pp. 9722-9730 [View PDF (240 kB) or Buy this Article (Use Article Pack) ]

•	Inhomogeneous broadening of intersubband transitions in In0.45Ga0.55As/Al0.45Ga0.55As multiple quantum wells G. Beadie, W. S. Rabinovich, D. S. Katzer, and M. Goldenberg pp. 9731-9739 [View PDF (192 kB) or Buy this Article (Use Article Pack) ]

•	Theory of random population for quantum dots M. Grundmann and D. Bimberg pp. 9740-9745 [View PDF (204 kB) or Buy this Article (Use Article Pack) ]

•	Time-resolved tunneling in the quantum Hall regime N. C. van der Vaart, L. P. Kouwenhoven, M. P. de Ruyter van Steveninck, Y. V. Nazarov, C. J. P. M. Harmans, and C. T. Foxon pp. 9746-9756 [View PDF (343 kB) or Buy this Article (Use Article Pack) ]

•	Temperature and excitation dependence of photoluminescence line shapein InAs/GaAs quantum-dot structures Hao Lee, Weidong Yang, and Peter C. Sercel pp. 9757-9762 [View PDF (193 kB) or Buy this Article (Use Article Pack) ]

•	Weakly nonlinear quantum transport: An exactly solvable model Jian Wang, Qingrong Zheng, and Hong Guo pp. 9763-9769 [View PDF (173 kB) or Buy this Article (Use Article Pack) ]

•	Current conservation in two-dimensional ac transport Jian Wang, Qingrong Zheng, and Hong Guo pp. 9770-9774 [View PDF (127 kB) or Buy this Article (Use Article Pack) ]

•	Observation of giant oscillations in the phonon-induced conductivity of a GaAs quantum wire A. J. Kent, A. J. Naylor, P. Hawker, M. Henini, and B. Bracher pp. 9775-9778 [View PDF (98 kB) or Buy this Article (Use Article Pack) ]

•	Resonance impurity states in a quantum well in the presence of electric and strong magnetic fields B. S. Monozon, C. A. Bates, J. L. Dunn, and M. J. Pye pp. 9779-9785 [View PDF (162 kB) or Buy this Article (Use Article Pack) ]

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