Physical Review B
– 15 April 1997
Volume 55, Issue 16
RAPID COMMUNICATIONS
Electronic structure: wide-band, narrow-band, and strongly correlated systems
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Magneto-optical properties of U 5f electrons in U3P4
J. Köhler, L. M. Sandratskii, and J. Kübler
pp.
R10153-R10156
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Proposed synthesis path for heterodiamond BC2N
Y. Tateyama, T. Ogitsu, K. Kusakabe, S. Tsuneyuki, and S. Itoh
pp.
R10161-R10164
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Pauli susceptibility of A3C60 (A=K,Rb)
F. Aryasetiawan, O. Gunnarsson, E. Koch, and R. M. Martin
pp.
R10165-R10168
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Optical evidence of 4f-band formation in CeN
Anna Delin, P. M. Oppeneer, M. S. S. Brooks, T. Kraft, J. M. Wills, Börje Johansson, and Olle Eriksson
pp.
R10173-R10176
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Semiconductors I: bulk
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Optical detection of magnetic resonance in electron-irradiated GaN
Matthias Linde, S. J. Uftring, G. D. Watkins, V. Härle, and F. Scholz
pp.
R10177-R10180
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Ballistic transport of holes and phonon replicas in lightly doped GaAs
D. Sprinzak, M. Heiblum, Y. Levinson, and Hadas Shtrikman
pp.
R10185-R10188
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Semiconductors II: surfaces, interfaces, microstructures, and related topics
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Surface segregation in (Ga,In)As/GaAs quantum boxes
N. Grandjean, J. Massies, and O. Tottereau
pp.
R10189-R10192
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Thermoelectric signature of the excitation spectrum of a quantum dot
A. S. Dzurak, C. G. Smith, C. H. W. Barnes, M. Pepper, L. Martín-Moreno, C. T. Liang, D. A. Ritchie, and G. A. C. Jones
pp.
R10197-R10200
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Theory of the breakdown of the quantum Hall effect
V. Tsemekhman, K. Tsemekhman, C. Wexler, J. H. Han, and D. J. Thouless
pp.
R10201-R10204
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Persistent current in an artificial quantum-dot molecule
R. Kotlyar and S. Das Sarma
pp.
R10205-R10208
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Ballistic electrons in an open square geometry: Selective probing of resonant-energy states
I. V. Zozoulenko, R. Schuster, K. -F. Berggren, and K. Ensslin
pp.
R10209-R10212
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High-temperature anomaly of the conductance of a tunnel junction
Georg Göppert, Xiaohui Wang, and Hermann Grabert
pp.
R10213-R10216
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Stability of optically active charged excitons in quasi-two-dimensional systems
James R. Chapman, Neil F. Johnson, and V. Nikos Nicopoulos
pp.
R10221-R10224
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Surface physics, low-dimensional systems, and related topics
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Effects of hydrogen in Ni(100) submonolayer homoepitaxy
Kenneth Haug, Zhenyu Zhang, David John, Curtis F. Walters, David M. Zehner, and Ward E. Plummer
pp.
R10233-R10236
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Sublimation of the Si(111) surface in ultrahigh vacuum
Yoshikazu Homma, Hiroki Hibino, Toshio Ogino, and Noriyuki Aizawa
pp.
R10237-R10240
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Growth and characterization of vapor-deposited polyaniline on Cu(110)
R. V. Plank, N. J. DiNardo, and J. M. Vohs
pp.
R10241-R10244
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First-principles study on B12 clusters in Si
Jun Yamauchi, Nobutoshi Aoki, and Ichiro Mizushima
pp.
R10245-R10252
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ARTICLES
Electronic structure: wide-band, narrow-band, and strongly correlated systems
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Band structure and transport properties of CrO2
Steven P. Lewis, Philip B. Allen, and Taizo Sasaki
pp.
10253-10260
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Spontaneous lattice deformation in the Hofstadter system
Takeshi Honda and Tetsuji Tokihiro
pp.
10261-10269
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Ab initio calculation of the quasiparticle spectrum and excitonic effects in Li2O
Stefan Albrecht, Giovanni Onida, and Lucia Reining
pp.
10278-10281
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Quantum chemical approach to cohesive properties of NiO
Klaus Doll, Michael Dolg, Peter Fulde, and Hermann Stoll
pp.
10282-10288
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Landauer conductance in the diffusive regime
X.-G. Zhang and W. H. Butler
pp.
10308-10318
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Numerical study of the current instability in a two-dimensional electron fluid
A. P. Dmitriev, A. S. Furman, V. Yu. Kachorovskii, G. G. Samsonidze, and Ge. G. Samsonidze
pp.
10319-10325
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Local-field effects in nonlinear dielectrics
M. A. Palenberg and B. U. Felderhof
pp.
10326-10336
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Calculation of energy levels and polarized oscillator strengths for Nd3+:YAG
Mattias Klintenberg, Sverker Edvardsson, and John O. Thomas
pp.
10369-10375
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Hybridization of the 3d states of transition metals with the states of the ZnS matrix
K. Lawniczak-Jablonska, R. C. C. Perera, J. H. Underwood, E. M. Gullikson, and R. J. Iwanowski
pp.
10376-10381
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Electronic structure of WSe2: A combined photoemission and inverse photoemission study
M. Traving, M. Boehme, L. Kipp, M. Skibowski, F. Starrost, E. E. Krasovskii, A. Perlov, and W. Schattke
pp.
10392-10399
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Occupied and unoccupied electronic band structure of WSe2
Th. Finteis, M. Hengsberger, Th. Straub, K. Fauth, R. Claessen, P. Auer, P. Steiner, S. Hüfner, P. Blaha, M. Vögt, M. Lux-Steiner, and E. Bucher
pp.
10400-10411
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Two-dimensional XXZ model ground-state properties using an analytic Lanczos expansion
N. S. Witte, Lloyd C. L. Hollenberg, and Zheng Weihong
pp.
10412-10419
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Absolute band gaps and electromagnetic transmission in quasi-one-dimensional comb structures
J. O. Vasseur, P. A. Deymier, L. Dobrzynski, B. Djafari-Rouhani, and A. Akjouj
pp.
10434-10442
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Statistics of rare events in disordered conductors
Igor E. Smolyarenko and Boris L. Altshuler
pp.
10451-10466
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Semiconductors I: bulk
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Defects in electron-irradiated GaAs studied by positron lifetime spectroscopy
A. Polity, F. Rudolf, C. Nagel, S. Eichler, and R. Krause-Rehberg
pp.
10467-10479
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Pressure-induced shallow donor transformations in gallium arsenide
Leonardo Hsu, S. Zehender, E. Bauser, and E. E. Haller
pp.
10515-10518
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Effect of spin-glass order on magnetic polarons in semimagnetic semiconductors
A. L. Chudnovskiy, R. Oppermann, B. Rosenow, D. R. Yakovlev, U. Zehnder, and W. Ossau
pp.
10519-10527
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Semiconductors II: surfaces, interfaces, microstructures, and related topics
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Influence of defects on the order-disorder phase transition of a Si(001) surface
Yoshimichi Nakamura, Hiroshi Kawai, and Masatoshi Nakayama
pp.
10549-10560
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Exciton magnetic polaron in semimagnetic semiconductor nanocrystals
A. K. Bhattacharjee and C. Benoit `a la Guillaume
pp.
10613-10620
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Enhancement of electron-phonon interaction in ultrashort-period GaAs/AlAs superlattices
V. G. Litovchenko, D. V. Korbutyak, S. Krylyuk, H. T. Grahn, and K. H. Ploog
pp.
10621-10624
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Delocalization in continuous disordered systems
M. Hilke and J. C. Flores
pp.
10625-10630
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Coulomb blockade threshold in inhomogeneous one-dimensional arrays of tunnel junctions
J. A. Melsen, Ulrik Hanke, H.-O. Müller, and K.-A. Chao
pp.
10638-10642
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Quantum Hall effect in single wide quantum wells
M. Abolfath, L. Belkhir, and N. Nafari
pp.
10643-10653
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Statistics of Skyrmions and the ν=5/2 puzzle
Jacek Dziarmaga
pp.
10654-10660
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Hartree-Fock theory of Skyrmions in quantum Hall ferromagnets
H. A. Fertig, Luis Brey, R. Côté, A. H. MacDonald, A. Karlhede, and S. L. Sondhi
pp.
10671-10680
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Nonlinear transport in GaAs/AlAs harmonically confined quantum wires
I. C. da Cunha Lima, X.-F. Wang, and X. L. Lei
pp.
10681-10687
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Depletion-electric-field-induced second-harmonic generation near oxidized GaAs(001) surfaces
Thomas A. Germer, Kurt W. Kołasin-acuteski, John C. Stephenson, and Lee J. Richter
pp.
10694-10706
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Charge transport and magnetic properties in polyaniline doped with methane sulphonic acidand polyaniline-polyurethane blend
B. Sanjai, Anasuya Raghunathan, T. S. Natarajan, G. Rangarajan, Soloman Thomas, P. V. Prabhakaran, and S. Venkatachalam
pp.
10734-10744
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Surface physics, low-dimensional systems, and related topics
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Atomic-force-microscope study of contact area and friction on NbSe2
M. A. Lantz, S. J. O'Shea, M. E. Welland, and K. L. Johnson
pp.
10776-10785
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X-ray study of the oxidation of liquid-gallium surfaces
M. J. Regan, H. Tostmann, P. S. Pershan, O. M. Magnussen, E. DiMasi, B. M. Ocko, and M. Deutsch
pp.
10786-10790
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hcp-to-fcc stacking switch in thin cobalt films induced by Cu capping
Ch. Rath, J. E. Prieto, S. Müller, R. Miranda, and K. Heinz
pp.
10791-10799
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Ab initio study of the CoSi2 (110) surface
Doris Vogtenhuber and Raimund Podloucky
pp.
10805-10813
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Bond counting in a simulation model of epitaxial growth
Michael Schroeder, Pavel Smilauer, and Dietrich E. Wolf
pp.
10814-10818
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Interaction of silane with Cu(111): Surface alloy and molecular chemisorbed phases
N. J. Curson, H. G. Bullman, J. R. Buckland, and W. Allison
pp.
10819-10829
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Structure determination of chemisorbed c(2×2)P/Fe(100) using angle-resolved photoemissionextended fine structure and self-consistent-field Xα scattered-wave calculations: Comparison with c(2×2)S/Fe(100)
W. R. A. Huff, Y. Chen, X. S. Zhang, L. J. Terminello, F. M. Tao, Y. K. Pan, S. A. Kellar, E. J. Moler, Z. Hussain, H. Wu, Y. Zheng, X. Zhou, A. E. Schach von Wittenau, S. Kim, Z. Q. Huang, Z. Z. Yang, and D. A. Shirley
pp.
10830-10840
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Dispersions of surface states on diamond (100) and (111)
R. Graupner, M. Hollering, A. Ziegler, J. Ristein, L. Ley, and A. Stampfl
pp.
10841-10847
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|PxImpurity resistivity of an ideal metallic thin film
Zhongcheng Wang, Shaofeng Wang, Songhua Shen, and Shichang Zhou
pp.
10863-10868
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Local characterization of transmission properties of a two-dimensional photonic crystal
Eric B. McDaniel, J. W. P. Hsu, Lori S. Goldner, R. J. Tonucci, Eric L. Shirley, and Garnett W. Bryant
pp.
10878-10882
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EELS study of the clean and hydrogen-covered Mo(110) surface
J. Kröger, S. Lehwald, and H. Ibach
pp.
10895-10904
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Structure and properties of cobalt clusters up to the tetramer: A density-functional study
Christine Jamorski, Ana Martinez, Miguel Castro, and Dennis R. Salahub
pp.
10905-10921
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Microstructure of the surfactantlike effect in Ni/Ag(100) and (111)
Jean-Marc Roussel, Andrés Saúl, Guy Tréglia, and Bernard Legrand
pp.
10931-10937
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Electronic structure of quasicrystals studied by ultrahigh-energy-resolution photoemission spectroscopy
Z. M. Stadnik, D. Purdie, M. Garnier, Y. Baer, A.-P. Tsai, A. Inoue, K. Edagawa, S. Takeuchi, and K. H. J. Buschow
pp.
10938-10951
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Hydrogen transport in nickel (111)
Roi Baer, Yehuda Zeiri, and Ronnie Kosloff
pp.
10952
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