Physical Review B
– 15 May 1997
Volume 55, Issue 19
BRIEF REPORTS
Electronic structure: wide-band, narrow-band, and strongly correlated systems
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Single-particle gap above the Verwey transition in Fe3O4
J.-H. Park, L. H. Tjeng, J. W. Allen, P. Metcalf, and C. T. Chen
pp.
12813-12817
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Insulating gap in FeO: Correlations and covalency
I. I. Mazin and V. I. Anisimov
pp.
12822-12825
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Magneto-x-ray effects in transition-metal alloys
H. J. Gotsis and P. Strange
pp.
12826-12828
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Singlet and triplet doped-hole configurations in La2Cu0.5Li0.5O4
V. I. Anisimov, S. Yu. Ezhov, and T. M. Rice
pp.
12829-12832
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Semiconductors I: bulk
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Structural and electronic properties of group-III nitrides
Dirk Vogel, Peter Krüger, and Johannes Pollmann
pp.
12836-12839
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Light diffraction on Gunn-domain gratings
L. Subacius, V. Gruzinskis, E. Starikov, P. Shiktorov, and K. Jarasiu-barnas
pp.
12844-12847
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Quantum beats of exciton polaritons in hexagonal CdS crystals
D. Weber, W. Petri, U. Woggon, C. F. Klingshirn, S. Shevel, and E. O. Göbel
pp.
12848-12851
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Semiconductors II: surfaces, interfaces, microstructures, and related topics
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Photoluminescence mechanism for blue-light-emitting porous silicon
G. G. Qin, X. S. Liu, S. Y. Ma, J. Lin, G. Q. Yao, X. Y. Lin, and K. X. Lin
pp.
12876-12879
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Shot noise of sequential tunneling in a triple-barrier resonant-tunneling diode
S.-T. Yau, H. B. Sun, P. J. Edwards, and P. Lynam
pp.
12880-12883
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Surface physics, low-dimensional systems, and related topics
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STM study of formic acid adsorption on Cu(110)
Stephen Poulston, Roger A. Bennett, Adrian H. Jones, and Michael Bowker
pp.
12888-12891
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Surface atomic structure of c(2×2)-Si on Cu(110)
J. A. Martín-Gago, R. Fasel, J. Hayoz, R. G. Agostino, D. Naumovic-acute, P. Aebi, and L. Schlapbach
pp.
12896-12898
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Conductance quantization histograms of gold nanowires at 4 K
J. L. Costa-Krämer, N. García, and H. Olin
pp.
12910-12913
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Hydrogen-induced changes of the electronic states in ultrathin single-crystal vanadium layers
L.-C. Duda, P. Isberg, P. H. Andersson, P. Skytt, B. Hjörvarsson, J.-H. Guo, C. S̊athe, and J. Nordgren
pp.
12914-12917
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ARTICLES
Electronic structure: wide-band, narrow-band, and strongly correlated systems
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Specific heat of the two-dimensional Hubbard model
Daniel Duffy and Adriana Moreo
pp.
12918-12924
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Charged-boson fluid in two and three dimensions
V. Apaja, J. Halinen, V. Halonen, E. Krotscheck, and M. Saarela
pp.
12925-12945
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Semiempirical Hartree-Fock calculations for pure and Li-doped KTaO3
R. I. Eglitis, A. V. Postnikov, and G. Borstel
pp.
12976-12981
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Second-order nonlinear optical properties of bond-alternating dipolar structures
Y. M. Cai, S. Yamada, O. Zamani-Khamiri, A. F. Garito, and K. Y. Wong
pp.
12982-12988
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Semiconductors I: bulk
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Minima of the muon depolarization rate in Cd1-xMnxTe
A. Golnik, A. Weidinger, Ch. Niedermayer, C. Bernhard, and E. Recknagel
pp.
13002-13008
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Crystal-field model of vanadium in 6H silicon carbide
B. Kaufmann, A. Dörnen, and F. S. Ham
pp.
13009-13019
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Infrared studies of hydrogenated amorphous carbon (a-C:H) and its alloys (a-C:H,N,F)
S. Liu, S. Gangopadhyay, G. Sreenivas, S. S. Ang, and H. A. Naseem
pp.
13020-13024
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Semiconductors II: surfaces, interfaces, microstructures, and related topics
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Theoretical study of the Si/GaAs(001)-c(4×4) surface
J. M. Bass and C. C. Matthai
pp.
13032-13039
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Antimony-stabilized GaAs(001)(2×4) reconstructions
W. G. Schmidt and F. Bechstedt
pp.
13051-13057
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Quantum-confined biexcitons in Si1-xGex grown on Si(001)
Kai Shum, P. M. Mooney, L. P. Tilly, and J. O. Chu
pp.
13058-13061
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Ionized impurity scattering in periodically δ-doped InP
A. B. Henriques, L. C. D. Goņcalves, N. F. Oliveira Jr., P. L. Souza, and B. Yavich
pp.
13072-13079
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Electric fields and valence-band offsets at strained [111] heterojunctions
S. Picozzi, A. Continenza, and A. J. Freeman
pp.
13080-13087
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Electron trajectories in rectangular antidot superlattices
S. Lüthi, T. Vancura, K. Ensslin, R. Schuster, G. Böhm, and W. Klein
pp.
13088-13092
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Electron mobility in Si δ-doped GaAs with spatial correlationsin the distribution of charged impurities
J. M. Shi, P. M. Koenraad, A. F. W. van de Stadt, F. M. Peeters, G. A. Farias, J. T. Devreese, J. H. Wolter, and Z. Wilamowski
pp.
13093-13099
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Exciton diamagnetic shifts in self-formed closely stacked InAs/GaAs quantum dots
Mitsuru Sugawara, Yoshiaki Nakata, Kohki Mukai, and Hajime Shoji
pp.
13155-13160
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Spin-density and charge-density excitations in quantum wires
Arne Brataas, A. G. Mal'shukov, Christoph Steinebach, Vidar Gudmundsson, and K. A. Chao
pp.
13161-13172
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Auger-process-induced charge separation in semiconductor nanocrystals
Victor I. Klimov and Duncan W. McBranch
pp.
13173-13179
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Many-body effects in the quasi-one-dimensional magnetoplasma
M. Bayer, Ch. Schlier, Ch. Gréus, A. Forchel, S. Benner, and H. Haug
pp.
13180-13192
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Surface physics, low-dimensional systems, and related topics
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Reconstruction of surface morphology from coherent x-ray reflectivity
I. A. Vartanyants, J. A. Pitney, J. L. Libbert, and I. K. Robinson
pp.
13193-13202
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Thresholds for the phase formation of cubic boron nitride thin films
H. Hofsäss, H. Feldermann, M. Sebastian, and C. Ronning
pp.
13230-13233
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Theory of giant Raman scattering from semicontinuous metal films
F. Brouers, S. Blacher, A. N. Lagarkov, Andrey K. Sarychev, Patrice Gadenne, and Vladimir M. Shalaev
pp.
13234-13245
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Comparative study of the stopping power of graphite and diamond
W. Käferböck, W Rössler, V. Necas, P. Bauer, M. Peñalba, E. Zarate, and A. Arnau
pp.
13275-13278
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Geometrical effects on the magnetism of small Ni clusters
S. Bouarab, A. Vega, M. J. López, M. P. Iñiguez, and J. A. Alonso
pp.
13279-13282
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Metal-cluster ionization energy: A profile-insensitive exact expression for the size effect
Michael Seidl, John P. Perdew, Marta Brajczewska, and Carlos Fiolhais
pp.
13288-13292
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Geometric and electronic structure of PbNa6 clusters
Yang Jinlong, Deng Kaiming, Xiao Chuanyun, and Wang Kelin
pp.
13293-13297
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Surface diffusion of Ge on Si(111): Experiment and simulation
C. E. Allen, R. Ditchfield, and E. G. Seebauer
pp.
13304-13313
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