Physical Review B
– 15 June 1997
Volume 55, Issue 23
BRIEF REPORTS
Electronic structure: wide-band, narrow-band, and strongly correlated systems
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Anomalous atomic volume of α-Pu
J. Kollár, L. Vitos, and H. L. Skriver
pp.
15353-15355
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Reciprocity theorems and pseudoelectric fields for ab initio force calculations
C. Wei, Steven P. Lewis, E. J. Mele, and Andrew M. Rappe
pp.
15356-15359
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Exactly solvable model of N coupled Luttinger chains
Lorenz Bartosch and Peter Kopietz
pp.
15360-15363
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Binding energy of 1Bu singlet excitons in the one-dimensional extended Hubbard-Peierls model
Z. Shuai, Swapan K. Pati, W. P. Su, J. L. Brédas, and S. Ramasesha
pp.
15368-15371
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Sn codoping effects on the photoluminescence of SiO2:Ge
M. Martini, F. Meinardi, A. Paleari, G. Spinolo, A. Vedda, D. Di Martino, and F. Negrisolo
pp.
15375-15377
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Semiconductors I: bulk
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Spectroscopic and photorefractive characterization of cadmium telluride crystals codoped with vanadium and manganese
Robert N. Schwartz, Chen-Chia Wang, Sudhir Trivedi, Gomatam V. Jagannathan, Frederic M. Davidson, Philip R. Boyd, and Unchul Lee
pp.
15378-15381
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Unit cell of strained GeSi
J. C. Woicik, C. E. Bouldin, K. E. Miyano, and C. A. King
pp.
15386-15389
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Mode locking in the Gunn effect
Qiang Tian and Benkun Ma
pp.
15390-15392
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Optical indirect transitions of semiconducting BaPb1-xBixO3
Kyoung Ha Kim, C. U. Jung, T. W. Noh, and S. C. Kim
pp.
15393-15396
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Semiconductors II: surfaces, interfaces, microstructures, and related topics
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Absence of long-range ordered reconstruction on the GaAs(311)A surface
P. Moriarty, Y.-R. Ma, A. W. Dunn, P. H. Beton, M. Henini, C. McGinley, E. McLoughlin, A. A. Cafolla, G. Hughes, S. Downes, D. Teehan, and B. Murphy
pp.
15397-15400
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Excitonic effects in free-standing ultrathin GaAs films
Martin Mosko, Dominik Munzar, and Pavel Vagner
pp.
15416-15419
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Quantum Hall liquid-to-insulator transition in In1-xGaxAs/InPt heterostructures
W. Pan, D. Shahar, D. C. Tsui, H. P. Wei, and M. Razeghi
pp.
15431-15433
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Surface physics, low-dimensional systems, and related topics
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Simulation of 3He crystal shapes
A. Gemintern, S. G. Lipson, and J. Adler
pp.
15441-15443
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Origin of the symmetric dimers in the Si(100) surface
H. Shigekawa, K. Hata, K. Miyake, M. Ishida, and S. Ozawa
pp.
15448-15451
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Dissociative sticking of O2 on Al(111)
L. Österlund, I. Zoric-acute, and B. Kasemo
pp.
15452-15455
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Si 2p core-level shifts at the As/Si(001) and Sb/Si(001) surfaces
Jun-Hyung Cho, Myung-Ho Kang, and Kiyoyuki Terakura
pp.
15464-15466
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PDF (62 kB)]
ARTICLES
Electronic structure: wide-band, narrow-band, and strongly correlated systems
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Magnetothermal conductivity of La0.8Ca0.2MnO3
Baoxing Chen, A. G. Rojo, C. Uher, H. L. Ju, and R. L. Greene
pp.
15471-15474
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Determination of electronic band structures of CaMnO3 and LaMnO3 using optical-conductivity analyses
J. H. Jung, K. H. Kim, D. J. Eom, T. W. Noh, E. J. Choi, Jaejun Yu, Y. S. Kwon, and Y. Chung
pp.
15489-15493
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Orbital and charge ordering in Pr1-xCaxMnO3 (x=0 and 0.5) from the ab initio calculations
V. I. Anisimov, I. S. Elfimov, M. A. Korotin, and K. Terakura
pp.
15494-15499
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Phase transition in LiVO2 studied by near-edge x-ray-absorption spectroscopy
H. F. Pen, L. H. Tjeng, E. Pellegrin, F. M. F. de Groot, G. A. Sawatzky, M. A. van Veenendaal, and C. T. Chen
pp.
15500-15505
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Tests of a density-based local pseudopotential for sixteen simple metals
L. Pollack, J. P. Perdew, J. He, M. Marques, F. Nogueira, and C. Fiolhais
pp.
15544-15551
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Composite-fermion Hall conductance at ν=
S. A. Kivelson, D-H. Lee, Y. Krotov, and J. Gan
pp.
15552-15561
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Semiconductors I: bulk
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(CAs)2-hydrogen defects in GaAs: A first-principles study
J. P. Goss, R. Jones, S. Öberg, and P. R. Briddon
pp.
15576-15580
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Arsenic interstitials and interstitial complexes in low-temperature grown GaAs
J. I. Landman, C. G. Morgan, J. T. Schick, P. Papoulias, and A. Kumar
pp.
15581-15586
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Space-charge-limited currents due to large polarons
M. N. Bussac and L. Zuppiroli
pp.
15587-15590
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Coherent TO phonon relaxation in GaAs and InP
F. Ganikhanov and F. Vallée
pp.
15614-15618
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Thermoelastic and electronic strain contributions to the frequency transmission photoacoustic effect in semiconductors
D. M. Todorovic-acute, P. M. Nikolic-acute, A. I. Bojicic-acute, and K. T. Radulovic-acute
pp.
15631-15642
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Semiconductors II: surfaces, interfaces, microstructures, and related topics
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High-resolution x-ray diffraction from multilayered self-assembled Ge dots
A. A. Darhuber, P. Schittenhelm, V. Holý, J. Stangl, G. Bauer, and G. Abstreiter
pp.
15652-15663
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Electronic structures of the Si(001)2×3-In surface
H. W. Yeom, T. Abukawa, Y. Takakuwa, Y. Mori, T. Shimatani, A. Kakizaki, and S. Kono
pp.
15669-15674
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Size-selective two-photon spectroscopy of CuCl spherical quantum dots
A. V. Baranov, Y. Masumoto, K. Inoue, A. V. Fedorov, and A. A. Onushchenko
pp.
15675-15680
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Self-consistent calculation of discrete and continuous states in spherical semiconductor quantum dots
G. Todorovic-acute, V. Milanovic-acute, Z. Ikonic-acute, and D. Indjin
pp.
15681-15687
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Quantum confinement effect in thin quantum wires
Jian-Bai Xia and K. W. Cheah
pp.
15688-15693
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Interacting valence holes in p-type SiGe quantum disks in a magnetic field
Luis G. C. Rego, Pawel Hawrylak, Jose A. Brum, and Arkadiusz Wojs
pp.
15694-15700
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Highly nonlinear Zeeman splitting of excitons in semiconductor quantum wells
N. J. Traynor, R. J. Warburton, M. J. Snelling, and R. T. Harley
pp.
15701-15705
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Excitonic effects in the miniband formation of graded-gap superlattices
N. Linder, U. Behn, F. Agulló-Rueda, H. T. Grahn, L. Schrottke, and K. H. Ploog
pp.
15720-15726
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Roughness scattering in a finite-length wire
Yasuhiro Tokura and Seigo Tarucha
pp.
15740-15747
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Activated resistivities in the integer quantum Hall effect
Sudhansu S. Mandal and V. Ravishankar
pp.
15748-15756
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Effect of confinement on energy-dependent dephasing in heterostructures
S. R. Bolton, S. Bar-Ad, G. Sucha, D. S. Chemla, D. L. Sivco, and A. Y. Cho
pp.
15768-15775
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Optical absorption of type-II superlattices
S. Glutsch, P. Lefebvre, and D. S. Chemla
pp.
15786-15790
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Interdiffusion: A probe of vacancy diffusion in III-V materials
O. M. Khreis, W. P. Gillin, and K. P. Homewood
pp.
15813-15818
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Size and shape effects of quantum dots on two-electron spectra
Jia-Lin Zhu, Zhi-Qiang Li, Jing-Zhi Yu, Kaoru Ohno, and Yoshiyuki Kawazoe
pp.
15819-15823
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Quantized thermal transport in the fractional quantum Hall effect
C. L. Kane and Matthew P. A. Fisher
pp.
15832-15837
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Surface physics, low-dimensional systems, and related topics
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Extended Thomas-Fermi molecular dynamics of sodium clusters
P. Blaise, S. A. Blundell, and C. Guet
pp.
15856-15867
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(BAl12)Cs:mA cluster-assembled solid
C. Ashman, S. N. Khanna, Feng Liu, P. Jena, T. Kaplan, and M. Mostoller
pp.
15868-15873
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X-ray reflectivity studies of liquid metal and alloy surfaces
M. J. Regan, P. S. Pershan, O. M. Magnussen, B. M. Ocko, M. Deutsch, and L. E. Berman
pp.
15874-15884
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Biphase ordering on Fe3O4(111)
N. G. Condon, F. M. Leibsle, T. Parker, A. R. Lennie, D. J. Vaughan, and G. Thornton
pp.
15885-15894
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Local heteroepitaxy of diamond on silicon (100):mA study of the interface structure
E. Maillard-Schaller, O. M. Küttel, P. Gröning, O. Gröning, R. G. Agostino, P. Aebi, L. Schlapbach, P. Wurzinger, and P. Pongratz
pp.
15895-15904
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Hydrogen-induced lattice expansion of vanadium in a Fe/V (001) single-crystal superlattice
Gabriella Andersson, Björgvin Hjörvarsson, and Hartmut Zabel
pp.
15905-15911
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Electron-diffraction effects on scanning tunneling spectroscopy
Fredy R. Zypman and Luis F. Fonseca
pp.
15912-15918
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Pressure effect on diamond nucleation in a hot-filament CVD system
S. T. Lee, Y. W. Lam, Zhangda Lin, Yan Chen, and Qijin Chen
pp.
15937-15941
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