Physical Review B
– 15 January 1997
Volume 55, Issue 3
BRIEF REPORTS
Electronic structure: wide-band, narrow-band, and strongly correlated systems
Semiconductors II: surfaces, interfaces, microstructures, and related topics
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Quinquethiophene light-emitting diodes with molecular dimensions
A. J. Pal, T. Österg̊ard, J. Paloheimo, and H. Stubb
pp.
1306-1309
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Negatively charged excitons in coupled double quantum wells
A. J. Shields, J. L. Osborne, D. M. Whittaker, M. Y. Simmons, M. Pepper, and D. A. Ritchie
pp.
1318-1321
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Form of the quantum kinetic-energy operator with spatially varying effective mass
F. S. A. Cavalcante, R. N. Costa Filho, J. Ribeiro Filho, C. A. S. de Almeida, and V. N. Freire
pp.
1326-1328
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Theoretical study of magnetotunneling spectroscopy
T.-J. Chow, G. Y. Wu, K.-M. Hung, and C.-W. Chen
pp.
1329-1332
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Exciton formation rates in GaAs/AlxGa1-xAs quantum wells
C. Piermarocchi, F. Tassone, V. Savona, A. Quattropani, and P. Schwendimann
pp.
1333-1336
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Atomic-scale imaging of strain relaxation via misfit dislocations in highly mismatched semiconductor heteroepitaxy: InAs/GaAs(111)A
H. Yamaguchi, J. G. Belk, X. M. Zhang, J. L. Sudijono, M. R. Fahy, T. S. Jones, D. W. Pashley, and B. A. Joyce
pp.
1337-1340
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Magnetoconductance of Aharonov-Bohm rings with half-bound states
Massimiliano Di Ventra, Florian Gagel, and Klaus Maschke
pp.
1353-1356
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Equilibration length of edge states in a GaAs/InyGa1-yAs/AlxGa1-xAs quantum well
J. Herfort, Y. Takagaki, K.-J. Friedland, R. Hey, H. Kostial, and K. Ploog
pp.
1357-1360
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Electronic states and optical gain in strained CdS/ZnS quantum structures
U. Woggon, W. Petri, A. Dinger, S. Petillon, M. Hetterich, M. Grün, K. P. O'Donnell, H. Kalt, and C. Klingshirn
pp.
1364-1367
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Magnetically induced suppression of phase breaking in ballistic mesoscopic billiards
Y. Okubo, J. P. Bird, Y. Ochia, D. K. Ferry, K. Ishibashi, Y. Aoyagi, and T. Sugano
pp.
1368-1371
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Surface physics, low-dimensional systems, and related topics
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Collective excitations of two layers of K on Ni(111)
G. Chiarello, A. Cupolillo, A. Amoddeo, L. S. Caputi, L. Papagno, and E. Colavita
pp.
1376-1379
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Heteroepitaxial subsurface growth mode resulting in interlayer mixing
P. W. Murray, S. Thorshaug, I. Stensgaard, F. Besenbacher, E. Lægsgaard, A. V. Ruban, K. W. Jacobsen, G. Kopidakis, and H. L. Skriver
pp.
1380-1383
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Critical examination of prewetting and surface melting on caprolactam
Gerard C. L. Wong, Wim H. de Jeu, Gertjan Bögels, Erwin P. G. van den Berg, and Piet Bennema
pp.
1388-1390
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Lattice dynamics of the Ni(977) surface
Gregor Witte and J. Peter Toennies
pp.
1395-1397
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ARTICLES
Electronic structure: wide-band, narrow-band, and strongly correlated systems
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Optical and loss spectra of SiC polytypes from ab initio calculations
B. Adolph, K. Tenelsen, V. I. Gavrilenko, and F. Bechstedt
pp.
1422-1429
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High-resolution Gd 4d photoemission from different intermetallic compounds
Jacek Szade, Jens Lachnitt, and Manfred Neumann
pp.
1430-1434
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Raman scattering in the RTiO3 family of Mott-Hubbard insulators
M. Reedyk, D. A. Crandles, M. Cardona, J. D. Garrett, and J. E. Greedan
pp.
1442-1448
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Electronic structure of light metal hydrides
P. K. Khowash, B. K. Rao, T. McMullen, and P. Jena
pp.
1454-1458
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Electron-spectroscopy study of correlation mechanisms in CuGeO3ssingle crystals
F. Parmigiani, L. Sangaletti, A. Goldoni, U. del Pennino, C. Kim, Z.-X. Shen, A. Revcolevschi, and G. Dhal`enne
pp.
1459-1468
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Low-temperature transport properties of the filled skutterudites CeFe4-x Cox Sb12s
Baoxing Chen, Jun-Hao Xu, Ctirad Uher, Donald T. Morelli, Gregory P. Meisner, Jean-Pierre Fleurial, Thierry Caillat, and Alex Borshchevsky
pp.
1476-1480
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Optical absorption in the substituted phenylene-based conjugated polymers: Theory and experiment
M. Chandross, S. Mazumdar, M. Liess, P. A. Lane, Z. V. Vardeny, M. Hamaguchi, and K. Yoshino
pp.
1486-1496
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Semiconductors I: bulk
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General model for the description of the third-order optical nonlinearitiesin conjugated systems: Application to the all-trans Β-carotene molecule
D. Beljonne, J. Cornil, Z. Shuai, J. L. Brédas, F. Rohlfing, D. D. C. Bradley, W. E. Torruellas, V. Ricci, and G. I. Stegeman
pp.
1505-1516
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Highly optimized tight-binding model of silicon
Thomas J. Lenosky, Joel D. Kress, Inhee Kwon, Arthur F. Voter, Byard Edwards, David F. Richards, Sang Yang, and James B. Adams
pp.
1528-1544
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Plasmon-phonon coupling in δ-doped polar semiconductors
Guo-Qiang Hai, Nelson Studart, and Gilmar E. Marques
pp.
1554-1562
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Semiconductors II: surfaces, interfaces, microstructures, and related topics
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Single-electron charging and Coulomb interaction in InAs self-assembled quantum dot arrays
G. Medeiros-Ribeiro, F. G. Pikus, P. M. Petroff, and A. L. Efros
pp.
1568-1573
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Localized electronic states in coupled superlattices
Maria Sţes-acutelicka and Robert Kucharczyk
pp.
1574-1577
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Exciton states in isolated quantum wires
Jian-Bai Xia and K. W. Cheah
pp.
1596-1601
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Band alignment in ZnSe/Zn1-x-y Cdx Mny Se quantum-well structures
W. Y. Yu, M. S. Salib, A. Petrou, B. T. Jonker, and J. Warnock
pp.
1602-1606
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Angle-resolved studies of the spin-flip Raman scattering of holes bound to acceptors in p-type nitrogen-doped zinc selenide
Catherine Orange, Bernhard Schlichtherle, Daniel Wolverson, J. John Davies, Tobias Ruf, Ken-ichi Ogata, and Shigeo Fujita
pp.
1607-1616
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Polarization choices in exciton-biexciton system of GaAs quantum wells
S. Adachi, T. Miyashita, S. Takeyama, Y. Takagi, A. Tackeuchi, and M. Nakayama
pp.
1654-1660
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Nonuniform segregation of Ga at AlAs/GaAs heterointerfaces
Wolfgang Braun, Achim Trampert, Lutz Däweritz, and Klaus H. Ploog
pp.
1689-1695
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Band-offset determination of the CdTe/(Cd,Mn)Te interface
T. Lebihen, E. Deleporte, and C. Delalande
pp.
1724-1729
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Birefringence in ordered (Al)GaInP
R. Wirth, A. Moritz, C. Geng, F. Scholz, and A. Hangleiter
pp.
1730-1740
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Surface physics, low-dimensional systems, and related topics
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Mode damping in a commensurate monolayer solid
L. W. Bruch and F. Y. Hansen
pp.
1782-1792
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X-ray diffraction peaks due to misfit dislocations in heteroepitaxial structures
V. M. Kaganer, R. Köhler, M. Schmidbauer, R. Opitz, and B. Jenichen
pp.
1793-1810
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Decay of isolated surface features driven by the Gibbs-Thomson effect in an analytic model and a simulation
James G. McLean, B. Krishnamachari, D. R. Peale, E. Chason, James P. Sethna, and B. H. Cooper
pp.
1811-1823
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Cesium adsorption on TiO2(110)
Ann W. Grant and Charles T. Campbell
pp.
1844-1851
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Surface photoemission in Ag(100)
E. D. Hansen, T. Miller, and T.-C. Chiang
pp.
1871-1875
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Molecular beam epitaxy in the presence of phase separation
Fraņcois Léonard, Mohamed Laradji, and Rashmi C. Desai
pp.
1887-1894
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