Physical Review B
– 15 September 1997
Volume 56, Issue 11
BRIEF REPORTS
Electronic structure: wide-band, narrow-band, and strongly correlated systems
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Local environment of tin in layered SnSe2xS2(1-x) compounds by 119Sn Mössbauer spectroscopy
C. Pérez Vicente, J. L. Tirado, P. E. Lippens, and J. C. Jumas
pp.
6371-6375
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Electronic structure of SrRuO3
K. Fujioka, J. Okamoto, T. Mizokawa, A. Fujimori, I. Hase, M. Abbate, H. J. Lin, C. T. Chen, Y. Takeda, and M. Takano
pp.
6380-6383
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Raman vs Rayleigh scattering in the soft-x-ray region
Eiichi Hanamura, Hidekatsu Suzuura, Akane Agui, and Shik Shin
pp.
6384-6387
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Semiconductors I: bulk
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Anomalous diffusion of tin in silicon
Per Kringhøj and Arne Nylandsted Larsen
pp.
6396-6399
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Local vibrational modes in GaAs under hydrostatic pressure
M. D. McCluskey, E. E. Haller, J. Walker, N. M. Johnson, J. Vetterhöffer, J. Weber, T. B. Joyce, and R. C. Newman
pp.
6404-6407
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Semiconductors II: surfaces, interfaces, microstructures, and related topics
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Envelope of Weiss oscillations and the role of disorder in surface superlattices
Y. Paltiel, U. Meirav, D. Mahalu, and Hadas Shtrikman
pp.
6416-6419
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Intra-atomic correlation effects and the electronic and magnetic properties in nanotubes
R. J. Tarento, P. Joyes, M. T. Le Houcq, and J. Van de Walle
pp.
6420-6423
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Effect of long-range Coulomb interaction on shot-noise suppression in ballistic transport
T. González, O. M. Bulashenko, J. Mateos, D. Pardo, and L. Reggiani
pp.
6424-6427
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Surface physics, low-dimensional systems, and related topics
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Speckle in coherent x-ray reflectivity from Si(111) wafers
J. L. Libbert, R. Pindak, S. B. Dierker, and I. K. Robinson
pp.
6454-6457
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Epitaxy controlled by self-assembled nanometer-scale structures
T. M. Parker, L. K. Wilson, N. G. Condon, and F. M. Leibsle
pp.
6458-6461
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STM study of one-dimensional cluster formation of fullerenes: Dimerization of Y@C82
Y. Hasegawa, Y. Ling, S. Yamazaki, T. Hashizume, H. Shinohara, A. Sakai, H. W. Pickering, and T. Sakurai
pp.
6470-6473
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Surface phonons of H:Si(110)-(1×1)
Volker Gräschus, Albert Mazur, and Johannes Pollmann
pp.
6482-6485
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Temperature dependence of the direct band gap of Si-containing carbon nitride crystalline films
D. Y. Lin, C. F. Li, Y. S. Huang, Y. C. Jong, Y. F. Chen, L. C. Chen, C. K. Chen, K. H. Chen, and D. M. Bhusari
pp.
6498-6501
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Intraband transitions in simple metals: Evidence for non-Drude-like near-IR optical properties
H.-G. Boyen, R. Gampp, P. Oelhafen, B. Heinz, P. Ziemann, Ch. Lauinger, and St. Herminghaus
pp.
6502-6505
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ARTICLES
Electronic structure: wide-band, narrow-band, and strongly correlated systems
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Theory of many-fermion systems
D. Belitz and T. R. Kirkpatrick
pp.
6513-6541
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N-chain Hubbard model in weak coupling
Hsiu-Hau Lin, Leon Balents, and Matthew P. A. Fisher
pp.
6569-6593
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Efficient ab initio tight binding
Andrew P. Horsfield
pp.
6594-6602
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Cumulant approach to the low-temperature thermodynamics of many-body systems
Holger Köhler, Matthias Vojta, and Klaus W. Becker
pp.
6603-6614
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Photoemission study of the electronic structure of PtGa2
Li-Shing Hsu and K.-L. Tsang
pp.
6615-6619
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PDF (77 kB)]
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Experimental band structure of semimetal bismuth
G. Jezequel, J. Thomas, and I. Pollini
pp.
6620-6626
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Metal-insulator transition in AC60: RbC60 and KC60
K. Khazeni, Vincent H. Crespi, J. Hone, A. Zettl, and Marvin L. Cohen
pp.
6627-6630
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Semiconductors I: bulk
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Hydrogen molecules and hydrogen-related defects in crystalline silicon
N. Fukata, S. Sasaki, K. Murakami, K. Ishioka, K. G. Nakamura, M. Kitajima, S. Fujimura, J. Kikuchi, and H. Haneda
pp.
6642-6647
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Core polarization in solids: Formulation and application to semiconductors
Eric L. Shirley, Xuejun Zhu, and Steven G. Louie
pp.
6648-6661
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Ab initio study of silicon in the R8 phase
Bernd G. Pfrommer, Michel Co⁁té, Steven G. Louie, and Marvin L. Cohen
pp.
6662-6668
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Bound magnetic polarons in p-type Cu2Mn0.9Zn0.1SnS4
G. H. McCabe, T. Fries, M. T. Liu, Y. Shapira, L. R. Ram-Mohan, R. Kershaw, A. Wold, C. Fau, M. Averous, and E. J. McNiff, , Jr.
pp.
6673-6680
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Photobleaching and spectral diffusion in disordered media
M. C. J. M. Vissenberg and M. J. M. de Jong
pp.
6681-6688
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Effective-medium method for hopping transport in a magnetic field
O. Bleibaum, H. Böttger, and V. V. Bryksin
pp.
6698-6711
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Semiconductors II: surfaces, interfaces, microstructures, and related topics
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As on InP(110) studied within density-functional theory
U. Grossner, W. G. Schmidt, and F. Bechstedt
pp.
6719-6726
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Electronic structure of Mn on the GaAs(001) surface
Zongxian Yang, Kaiming Zhang, Sanhuang Ke, and Xide Xie
pp.
6727-6731
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Quantum magnetotransport properties of short quantum wires
Tae-ik Park, Godfrey Gumbs, and M. Pepper
pp.
6758-6763
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Few-electron ground states of charge-tunable self-assembled quantum dots
B. T. Miller, W. Hansen, S. Manus, R. J. Luyken, A. Lorke, J. P. Kotthaus, S. Huant, G. Medeiros-Ribeiro, and P. M. Petroff
pp.
6764-6769
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Optical anisotropy of InAs submonolayer quantum wells in a (311) GaAs matrix
Y. H. Chen, Z. Yang, Z. G. Wang, B. Xu, J. B. Liang, and J. J. Qian
pp.
6770-6773
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Surface electrical conduction due to carrier doping into a surface-state band on Si(111)-√3×√3-Ag
Yuji Nakajima, Sakura Takeda, Tadaaki Nagao, Shuji Hasegawa, and Xiao Tong
pp.
6782-6787
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Quantum Hall Skyrmions with higher topological charge
D. Lilliehöök, K. Lejnell, A. Karlhede, and S. L. Sondhi
pp.
6805-6809
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Coherent states of alternating current
D. A. Ivanov, H. W. Lee, and L. S. Levitov
pp.
6839-6850
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Optical properties of monoclinic SnI2 from relativistic first-principles theory
P. Ravindran, A. Delin, R. Ahuja, B. Johansson, S. Auluck, J. M. Wills, and O. Eriksson
pp.
6851-6861
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Metastable excitons in ZnSe/Zn1-xFexSe quantum wells
W. Y. Yu, S. Stoltz, A. Petrou, J. Warnock, and B. T. Jonker
pp.
6862-6867
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Relaxation of hot excitons in inhomogeneously broadened CdxZn1-xSe/ZnSe nanostructures
G. Bacher, R. Spiegel, T. Kümmell, O. Breitwieser, A. Forchel, B. Jobst, D. Hommel, and G. Landwehr
pp.
6868-6870
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Miniband effects on hot-electron photoluminescence polarization in GaAs/AlAs superlattices
V. F. Sapega, V. I. Perel’, A. Yu. Dobin, D. N. Mirlin, I. A. Akimov, T. Ruf, M. Cardona, and K. Eberl
pp.
6871-6879
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Triple magnetopolarons in quantum wells
I. G. Lang, V. I. Belitsky, A. Cantarero, L. I. Korovin, S. T. Pavlov, and M. Cardona
pp.
6880-6888
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Determination of nitrogen-acceptor spin-Hamiltonian parameters in ZnSe epilayers via spin-flip Raman spectroscopy
Wolfram Heimbrodt, Catherine L. Orange, Daniel Wolverson, J. John Davies, Kozo Kimura, and Takafumi Yao
pp.
6889-6894
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Yellow luminescence in n-type GaN epitaxial films
H. M. Chen, Y. F. Chen, M. C. Lee, and M. S. Feng
pp.
6942-6946
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Surface physics, low-dimensional systems, and related topics
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Magic numbers in supported metal clusters
Saroj K. Nayak, P. Jena, V. S. Stepanyuk, W. Hergert, and K. Wildberger
pp.
6952-6957
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Surface self-diffusivity of TiO2 under high-pressure gas
Makoto Nanko and Kozo Ishizaki
pp.
6965-6969
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Epitaxial rotation of two-dimensional rare-gas lattices on Ag(111)
G. S. Leatherman, R. D. Diehl, M. Karimi, and G. Vidali
pp.
6970-6974
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Absolute luminescence efficiency of ion-bombarded solid argon
D. E. Grosjean, R. A. Vidal, R. A. Baragiola, and W. L. Brown
pp.
6975-6981
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Thermal shift in the binding energy of bulk W 4f7/2
H.-S. Tao, T. E. Madey, J. E. Rowe, and G. K. Wertheim
pp.
6982-6986
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Interaction mechanism of N2 with the Cr (110) surface
T. C. Guimarães, A. C. Pavão, C. A. Taft, and W. A. Lester, , Jr.
pp.
7001-7010
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