Physical Review B
– 15 September 1997
Volume 56, Issue 12
RAPID COMMUNICATIONS
Electronic structure: wide-band, narrow-band, and strongly correlated systems
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Strongly correlated electron systems: Photoemission and the single-impurity model
A. J. Arko, J. J. Joyce, A. B. Andrews, J. D. Thompson, J. L. Smith, D. Mandrus, M. F. Hundley, A. L. Cornelius, E. Moshopoulou, Z. Fisk, P. C. Canfield, and Alois Menovsky
pp.
R7041-R7044
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Global quantum fluctuations in metallic particles
J. A. Vergés, E. Cuevas, E. Louis, and M. Ortuño
pp.
R7045-R7048
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Nature of the insulating state in LaH3
X. W. Wang and Changfeng Chen
pp.
R7049-R7052
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PDF (90 kB)]
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Metal-insulator transition in the mixed-valence manganites
L. Sheng, D. Y. Xing, D. N. Sheng, and C. S. Ting
pp.
R7053-R7056
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Metal-insulator transition in layered manganites: (La1-zNdz)1.2Sr1.8Mn2O7
Y. Moritomo, Y. Maruyama, T. Akimoto, and A. Nakamura
pp.
R7057-R7060
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PDF (129 kB)]
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Observation of a gap opening in FeSi with photoelectron spectroscopy
K. Breuer, S. Messerli, D. Purdie, M. Garnier, M. Hengsberger, Y. Baer, and M. Mihalik
pp.
R7061-R7064
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Semiconductors I: bulk
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Quasiparticle calculations of semicore states in Si, Ge, and CdS
Michael Rohlfing, Peter Krüger, and Johannes Pollmann
pp.
R7065-R7068
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Stranski-Krastanov growth mode during the molecular beam epitaxy of highly strained GaN
B. Daudin, F. Widmann, G. Feuillet, Y. Samson, M. Arlery, and J. L. Rouvière
pp.
R7069-R7072
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Semiconductors II: surfaces, interfaces, microstructures, and related topics
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Manifestation of coherent spin precession in stimulated semiconductor emission dynamics
S. Hallstein, J. D. Berger, M. Hilpert, H. C. Schneider, W. W. Rühle, F. Jahnke, S. W. Koch, H. M. Gibbs, G. Khitrova, and M. Oestreich
pp.
R7076-R7079
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Carrier quantum confinement in self-ordered AlxGa1-xAs V-groove quantum wells
E. Martinet, A. Gustafsson, G. Biasiol, F. Reinhardt, E. Kapon, and K. Leifer
pp.
R7096-R7099
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Quantum Hall effect of interacting electrons in a periodic potential
Daniela Pfannkuche and A. H. MacDonald
pp.
R7100-R7103
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Surface physics, low-dimensional systems, and related topics
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Derivative relation for thermopower in the quantum Hall regime
Steven H. Simon and Nigel R. Cooper
pp.
R7116-R7119
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Perpendicular magnetization in ultrathin electrodeposited cobalt films
J. L. Bubendorff, E. Beaurepaire, C. Mény, P. Panissod, and J. P. Bucher
pp.
R7120-R7128
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ARTICLES
Electronic structure: wide-band, narrow-band, and strongly correlated systems
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Correlation effects for electron-positron momentum density in solids
B. Barbiellini, M. Hakala, M. J. Puska, R. M. Nieminen, and A. A. Manuel
pp.
7136-7142
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Enhanced dx2-y2 pairing correlations in the two-leg Hubbard ladder
R. M. Noack, N. Bulut, D. J. Scalapino, and M. G. Zacher
pp.
7162-7166
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Electronic structure and properties of Cu2O
Eliseo Ruiz, Santiago Alvarez, Pere Alemany, and Robert A. Evarestov
pp.
7189-7196
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LDA simulations of pressure-induced anomalies in c/a and electric-field gradients for Zn and Cd
D. L. Novikov, A. J. Freeman, N. E. Christensen, A. Svane, and C. O. Rodriguez
pp.
7206-7214
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Accurate valence band width of diamond
I. Jiménez, L. J. Terminello, D. G. J. Sutherland, J. A. Carlisle, E. L. Shirley, and F. J. Himpsel
pp.
7215-7221
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Chemical trend of occupied and unoccupied Mn 3d states in MnY (Y=S,Se,Te)
Hitoshi Sato, Takahiro Mihara, Akihito Furuta, Masamochi Tamura, Kojiro Mimura, Naohisa Happo, Masaki Taniguchi, and Yoshifumi Ueda
pp.
7222-7231
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Electronic structure of CeNi1-xPdxSn and LaMSn (M=Ni,Cu,Pd)
A. Ślebarski, A. Jezierski, S. Mähl, M. Neumann, and G. Borstel
pp.
7245-7254
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Ab initio calculations for the neutral and charged O vacancy in sapphire
Yong-Nain Xu, Zhong-Quan Gu, Xue-Fu Zhong, and W. Y. Ching
pp.
7277-7284
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Theoretical analysis of the magnetic circular dichroism in the 2p3d and 2p4d x-ray emission of Gd
F. M. F. de Groot, M. Nakazawa, A. Kotani, M. H. Krisch, and F. Sette
pp.
7285-7292
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Symmetry reduction in group 4mm photonic crystals
Cheryl M. Anderson and Konstantinos P. Giapis
pp.
7313-7320
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Semiconductors I: bulk
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Helium in silicon: Thermal-desorption investigation of bubble precursors
F. Corni, C. Nobili, G. Ottaviani, R. Tonini, G. Calzolari, G. F. Cerofolini, and G. Queirolo
pp.
7331-7338
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Hydrostatic-pressure coefficient of the indirect gap and fine structure of the valence band of 6H-SiC
F. Engelbrecht, J. Zeman, G. Wellenhofer, C. Peppermüller, R. Helbig, G. Martinez, and U. Rössler
pp.
7348-7355
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Effective masses and valence-band splittings in GaN and AlN
Kwiseon Kim, Walter R. L. Lambrecht, Benjamin Segall, and Mark van Schilfgaarde
pp.
7363-7375
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Cerium filling and doping of cobalt triantimonide
Donald T. Morelli, Gregory P. Meisner, Baoxing Chen, Siqing Hu, and Ctirad Uher
pp.
7376-7383
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Negatively charged Si vacancy in 4H SiC: A comparison between theory and experiment
T. Wimbauer, B. K. Meyer, A. Hofstaetter, A. Scharmann, and H. Overhof
pp.
7384-7388
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Dynamic band unblocking and leakage two-photon absorption in InSb
M. P. Hasselbeck, E. W. Van Stryland, and M. Sheik-Bahae
pp.
7395-7403
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High-field spin resonance of weakly bound electrons in GaAs
M. Seck, M. Potemski, and P. Wyder
pp.
7422-7427
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Platinum-enhanced oxidation of GaAs
Tomohiro Kubota, Yoshihiro Nakato, Kenji Yoneda, and Hikaru Kobayashi
pp.
7428-7434
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Semiconductors II: surfaces, interfaces, microstructures, and related topics
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Optimum widths of dimer vacancy lines on Si(100)-(2×1)
M.-H. Tsai, Y.-S. Tsai, C. S. Chang, Y. Wei, and I. S. T. Tsong
pp.
7435-7438
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Vibrational properties and charge transfer of C60 adsorbed on Si(111)-(7×7) and Si(100)-(2×1) surfaces
Shozo Suto, Kazuyuki Sakamoto, Takanori Wakita, Chang-Wu Hu, and Atsuo Kasuya
pp.
7439-7445
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STM tip-induced diffusion of In atoms on the Si(111)√3×√3-In surface
A. A. Saranin, T. Numata, O. Kubo, H. Tani, M. Katayama, V. G. Lifshits, and K. Oura
pp.
7449-7454
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Electron-hole interactions in silicon nanocrystals
Kevin Leung and K. B. Whaley
pp.
7455-7468
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Wire-width dependence of the LO-phonon splitting and photoluminescence energy in ZnSe/Cd0.35Zn0.65Se quantum wires
G. Lermann, T. Bischof, A. Materny, W. Kiefer, T. Kümmell, G. Bacher, A. Forchel, and G. Landwehr
pp.
7469-7476
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Giant back-scattering resonances in edge-state transport through quantum dots
J. P. Bird, M. Stopa, K. Connolly, D. P. Pivin, , Jr., and, D. K. Ferry, Y. Aoyagi, and T. Sugano
pp.
7477-7484
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Resonance patterns of an antidot cluster: From classical to quantum ballistics
G. Kirczenow, B. L. Johnson, P. J. Kelly, C. Gould, A. S. Sachrajda, Y. Feng, and A. Delage
pp.
7503-7507
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Classical transport of electrons through magnetic barriers
I. S. Ibrahim, V. A. Schweigert, and F. M. Peeters
pp.
7508-7516
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Magneto-optical spectroscopy of two-dimensional holes in GaAs/AlxGa1-xAs single heterojunctions
O. V. Volkov, V. E. Zhitomirskii, I. V. Kukushkin, W. Dietsche, K. v. Klitzing, A. Fischer, and K. Eberl
pp.
7541-7548
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Phonon response of AlxGa1-xSb/GaSb epitaxial layers by Fourier-transform infrared-reflectance and Raman spectroscopies
R. Ferrini, M. Galli, G. Guizzetti, M. Patrini, A. Bosacchi, S. Franchi, and R. Magnanini
pp.
7549-7553
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Bottleneck effects in the relaxation and photoluminescence of microcavity polaritons
F. Tassone, C. Piermarocchi, V. Savona, A. Quattropani, and P. Schwendimann
pp.
7554-7563
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Stimulated emission, gain, and coherent oscillations in II-VI semiconductor microcavities
P. V. Kelkar, V. G. Kozlov, A. V. Nurmikko, C.-C. Chu, J. Han, and R. L. Gunshor
pp.
7564-7573
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Optical spin resonance and transverse spin relaxation in magnetic semiconductor quantum wells
S. A. Crooker, D. D. Awschalom, J. J. Baumberg, F. Flack, and N. Samarth
pp.
7574-7588
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Surface physics, low-dimensional systems, and related topics
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Structural and electronic properties of small neutral (MgO)n clusters
E. de la Puente, A. Aguado, A. Ayuela, and J. M. López
pp.
7607-7614
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Sb doping of Si molecular-beam epitaxial layers: Influence of the substrate misorientation
M. Ladevèze, F. Bassani, F. Arnaud d’Avitaya, G. Tréglia, C. Dubois, and R. Stuck
pp.
7615-7622
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Self-diffusion of adatoms, dimers, and vacancies on Cu(100)
Ghyslain Boisvert and Laurent J. Lewis
pp.
7643-7655
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Surface electronic structure of the NdB6(110) clean surface studied by angle-resolved photoemission spectroscopy
Akinori Tanaka, Koji Tamura, Hiroshi Tsunematsu, Kazutoshi Takahashi, Masayuki Hatano, Shoji Suzuki, Shigeru Sato, Satoru Kunii, Ayumi Harasawa, Akio Kimura, and Akito Kakizaki
pp.
7660-7664
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Modulation of the charge of a single-electron transistor by distant defects
Neil M. Zimmerman, Jonathan L. Cobb, and Alan F. Clark
pp.
7675-7678
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Etching behavior of Si(001)-2×1 studied with optical anisotropy
D. J. Wentink, M. Kuijper, H. Wormeester, and A. van Silfhout
pp.
7679-7686
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Linear and circular dichroism in photoemission angular distribution from the valence band of 1T-TaS2
T. Matsushita, S. Imada, H. Daimon, T. Okuda, K. Yamaguchi, H. Miyagi, and S. Suga
pp.
7687-7693
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Tribological behavior of a polymer grafted on silanized silica probed with a nanotip
T. Bouhacina, J. P. Aimé, S. Gauthier, D. Michel, and V. Heroguez
pp.
7694-7703
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Propagator theory of scanning tunneling microscopy
C. Bracher, M. Riza, and M. Kleber
pp.
7704-7715
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