Physical Review B
– 15 October 1997
Volume 56, Issue 16
RAPID COMMUNICATIONS
Electronic structure: wide-band, narrow-band, and strongly correlated systems
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Possible non-Fermi-liquid nature of paramagnetic UBe13: The optical point of view
F. Bommeli, L. Degiorgi, P. Wachter, F. B. Anders, and A. V. Mitin
pp.
R10001-R10004
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Pressure effects on the metal-insulator transition in magnetoresistive manganese perovskites
V. Laukhin, J. Fontcuberta, J. L. García-Muñoz, and X. Obradors
pp.
R10009-R10012
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Theory of photoinduced ballistic bulk current in metals
V. L. Gurevich and A. Thellung
pp.
R10013-R10015
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Semiconductors I: bulk
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Comparative study of vibrational frequencies of H2 molecules in Si and GaAs
Yasuharu Okamoto, Mineo Saito, and Atsushi Oshiyama
pp.
R10016-R10019
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Interactions of hydrogen with native defects in GaN
Chris G. Van de Walle
pp.
R10020-R10023
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Spontaneous polarization and piezoelectric constants of III-V nitrides
Fabio Bernardini, Vincenzo Fiorentini, and David Vanderbilt
pp.
R10024-R10027
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Semiconductors II: surfaces, interfaces, microstructures, and related topics
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Biexcitonic binding energies in the transition regime from three- to two-dimensional semiconductors
A. Euteneuer, J. Möbius, R. Rettig, E. J. Mayer, M. Hofmann, W. Stolz, E. O. Göbel, and W. W. Rühle
pp.
R10028-R10031
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Polarization-dependent phenomena in the reflectivity spectra of semiconductor quantum microcavities
D. Baxter, M. S. Skolnick, A. Armitage, V. N. Astratov, D. M. Whittaker, T. A. Fisher, J. S. Roberts, D. J. Mowbray, and M. A. Kaliteevski
pp.
R10032-R10035
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Distinct center-of-mass quantization of light-hole and heavy-hole excitons in wide ZnTe-(Zn,Mg)Te quantum wells
Pierre Lefebvre, Vincent Calvo, Noël Magnea, Thierry Taliercio, Jacques Allègre, and Henry Mathieu
pp.
R10040-R10043
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Phonon-drag thermopower of a ballistic quantum wire
M. Tsaousidou and P. N. Butcher
pp.
R10044-R10047
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Skyrmionic excitons
T. Portengen, J. R. Chapman, V. Nikos Nicopoulos, and N. F. Johnson
pp.
R10052-R10055
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Observation of two-dimensional exciton-phonon quasibound states
N. T. Pelekanos, H. Haas, N. Magnea, V. I. Belitsky, and A. Cantarero
pp.
R10056-R10059
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Surface physics, low-dimensional systems, and related topics
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Damping width of the Mie plasmon
Haruki Kurasawa, Kazuhiro Yabana, and Toshio Suzuki
pp.
R10063-R10066
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Effect of adsorption on surface roughening
V. P. Zhdanov and B. Kasemo
pp.
R10067-R10070
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Observation of inverted island-substrate step structures in heteroepitaxial growth: Gd on W(100)
R. G. White, M. H. Lee, N. P. Tucker, S. D. Barrett, and P. W. Murray
pp.
R10071-R10074
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Wave-dispersed two-photon absorption of C60
GianPiero Banfi, Davide Fortusini, Marco Bellini, and Paolo Milani
pp.
R10075-R10078
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ARTICLES
Electronic structure: wide-band, narrow-band, and strongly correlated systems
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Electron-phonon interaction in disordered metal films: The resistivity and electron dephasing rate
N. G. Ptitsina, G. M. Chulkova, K. S. Il’in, A. V. Sergeev, F. S. Pochinkov, E. M. Gershenzon, and M. E. Gershenson
pp.
10089-10096
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Spin and charge structure factor of the two-dimensional Hubbard model
Walter Zimmermann, Raymond Frésard, and Peter Wölfle
pp.
10097-10104
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Kondo-lattice–like effects of hydrogen in transition metals
R. Eder, H. F. Pen, and G. A. Sawatzky
pp.
10115-10120
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Cohesive properties of alkali halides
Klaus Doll and Hermann Stoll
pp.
10121-10127
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Photoexcitations in para-hexaphenyl
W. Graupner, F. Meghdadi, G. Leising, G. Lanzani, M. Nisoli, S. De Silvestri, W. Fischer, and F. Stelzer
pp.
10128-10132
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Emission properties of para-hexaphenyl polycrystalline films
A. Piaggi, G. Lanzani, G. Bongiovanni, A. Mura, W. Graupner, F. Meghdadi, G. Leising, and M. Nisoli
pp.
10133-10137
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Momentum-dependent excitations in highly ordered films of para-hexaphenyl
E. Zojer, M. Knupfer, R. Resel, F. Meghdadi, G. Leising, and J. Fink
pp.
10138-10144
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Plasmon behavior of Zn from electron-energy-loss spectroscopy
K. Widder, M. Knupfer, O. Knauff, and J. Fink
pp.
10154-10160
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Fermi surface and optical properties of ordered Cu3Au
Sangeeta Sharma, A. K. Solanki, S. Auluck, and M. A. Khan
pp.
10172-10177
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Infrared reflectivity of the solid solutions LaNi1-xFexO3 (0.00<~x<~1.00)
Néstor E. Massa, Horacio Falcón, Horacio Salva, and Raúl E. Carbonio
pp.
10178-10191
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Positron annihilation study of the electronic structure of LaB6 and CeB6
M. Biasini, H. M. Fretwell, S. B. Dugdale, M. A. Alam, Y. Kubo, H. Harima, and N. Sato
pp.
10192-10199
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Semiconductors I: bulk
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Defect states in plastically deformed n-type silicon
D. Cavalcoli, A. Cavallini, and E. Gombia
pp.
10208-10214
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Vacancy aggregates in silicon
J. L. Hastings, S. K. Estreicher, and P. A. Fedders
pp.
10215-10220
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Capacitance transient study of the deep Fe acceptor in indium phosphide
A. Dadgar, R. Engelhardt, M. Kuttler, and D. Bimberg
pp.
10241-10248
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Long-lived photoexcited states in polydiacetylenes with different molecular and supramolecular organization
D. Comoretto, I. Moggio, C. Cuniberti, G. Dellepiane, M. E. Giardini, and A. Borghesi
pp.
10264-10270
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Surface and bulk electronic structure of thin-film wurtzite GaN
Sarnjeet S. Dhesi, Cristian B. Stagarescu, Kevin E. Smith, Dharanipal Doppalapudi, Raj Singh, and Theodore D. Moustakas
pp.
10271-10275
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Enhanced photoluminescence from porous silicon formed by nonstandard preparation
A. I. Belogorokhov, R. Enderlein, A. Tabata, J. R. Leite, V. A. Karavanskii, and L. I. Belogorokhova
pp.
10276-10282
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Semiconductors II: surfaces, interfaces, microstructures, and related topics
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Surface atomic configurations due to dislocation activity in InAs/GaAs(110) heteroepitaxy
J. G. Belk, D. W. Pashley, C. F. McConville, J. L. Sudijono, B. A. Joyce, and T. S. Jones
pp.
10289-10296
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Quasistatic and dynamic interaction of high-frequency fields with miniband electrons in semiconductor superlattices
S. Winnerl, E. Schomburg, J. Grenzer, H.-J. Regl, A. A. Ignatov, A. D. Semenov, K. F. Renk, D. G. Pavel’ev, Yu. Koschurinov, B. Melzer, V. Ustinov, S. Ivanov, S. Schaposchnikov, and P. S. Kop’ev
pp.
10303-10307
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Frictional Coulomb drag in strong magnetic fields
Martin Christian Bønsager, Karsten Flensberg, Ben Yu-Kuang Hu, and Antti-Pekka Jauho
pp.
10314-10325
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Electronic structure of strained InP/Ga0.51In0.49P quantum dots
Craig Pryor, M-E. Pistol, and L. Samuelson
pp.
10404-10411
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Coherent spin dynamics of excitons in quantum wells
M. Dyakonov, X. Marie, T. Amand, P. Le Jeune, D. Robart, M. Brousseau, and J. Barrau
pp.
10412-10422
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Second-harmonic generation involving valence-subband transitions in p-doped GaAs/AlxGa1-xAs quantum wells
A. Bitz, M. Marsi, E. Tuncel, S. Gürtler, J. L. Staehli, B. J. Vartanian, M. J. Shaw, and A. F. G. van der Meer
pp.
10428-10434
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Energy relaxation by multiphonon processes in InAs/GaAs quantum dots
R. Heitz, M. Veit, N. N. Ledentsov, A. Hoffmann, D. Bimberg, V. M. Ustinov, P. S. Kop’ev, and Zh. I. Alferov
pp.
10435-10445
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Formation of type-II excitons in CdTe/Cd1-xMnxTe superlattices at high magnetic fields
H. H. Cheng, R. J. Nicholas, D. E. Ashenford, and B. Lunn
pp.
10453-10458
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Competing growth mechanisms of Ge/Si(001) coherent clusters
I. Goldfarb, P. T. Hayden, J. H. G. Owen, and G. A. D. Briggs
pp.
10459-10468
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Grazing-incidence x-ray scattering from stepped interfaces in AlAs/GaAs superlattices
E. A. Kondrashkina, S. A. Stepanov, R. Opitz, M. Schmidbauer, R. Köhler, R. Hey, M. Wassermeier, and D. V. Novikov
pp.
10469-10482
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Fabrication of SiGe quantum dots on a Si(100) surface
Vinh Le Thanh, D. Bouchier, and D. Débarre
pp.
10505-10510
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Surface physics, low-dimensional systems, and related topics
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Order-disorder phase transitions of oxygen on Rh(100)
A. Baraldi, V. R. Dhanak, G. Comelli, K. C. Prince, and R. Rosei
pp.
10511-10517
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Nonequilibrium configurations of monatomic steps on cleaved GaAs(110) surfaces
M. A. Rosentreter, M. Wenderoth, N. H. Theuerkrauf, A. J. Heinrich, M. A. Schneider, and R. G. Ulbrich
pp.
10538-10543
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Structure and apparent topography of TiO2(110) surfaces
Kwok-On Ng and David Vanderbilt
pp.
10544-10548
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Ultrathin metal films on a metal oxide surface: Growth of Au on TiO2 (110)
Lei Zhang, Rajendra Persaud, and Theodore E. Madey
pp.
10549-10557
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Kinetics of oxygen surfactant in Cu(001) homoepitaxial growth
Masanori Yata, Herve Rouch, and Keikichi Nakamura
pp.
10579-10584
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Surface structure analysis of Ni(111)-(√3×√3)R30°-Pb by impact-collision ion-scattering spectroscopy
Kenji Umezawa, Shigemitsu Nakanishi, Takahiro Yumura, Walter M. Gibson, Masatoshi Watanabe, Yoshiaki Kido, Shunya Yamamoto, Yasushi Aoki, and Hiroshi Naramoto
pp.
10585-10589
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Low-temperature resistance and its temperature dependence in nanostructured silver
X. Y. Qin, W. Zhang, L. D. Zhang, L. D. Jiang, X. J. Liu, and D. Jin
pp.
10596-10604
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Energy dispersions and bandwidth in Pd 4d photoemission spectra
J.-S. Kang, D. W. Hwang, C. G. Olson, S. J. Youn, K.-C. Kang, and B. I. Min
pp.
10605-10613
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Electronic structure of titanium monoxide
S. Bartkowski, M. Neumann, E. Z. Kurmaev, V. V. Fedorenko, S. N. Shamin, V. M. Cherkashenko, S. N. Nemnonov, A. Winiarski, and D. C. Rubie
pp.
10656-10667
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Exact calculation of multifractal exponents of the critical wave function of Dirac fermions in a random magnetic field
Horacio E. Castillo, Claudio de C. Chamon, Eduardo Fradkin, Paul M. Goldbart, and Christopher Mudry
pp.
10668-10677
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