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PROLA » Phys. Rev. B » Volume 56 » Issue 20
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Physical Review B – 15 November 1997
Volume 56, Issue 20

RAPID COMMUNICATIONS

Electronic structure: wide-band, narrow-band, and strongly correlated systems

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Large thermoelectric power in NaCo2O4 single crystals
I. Terasaki, Y. Sasago, and K. Uchinokura
pp. R12685-R12687 [View PDF (111 kB)]
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Pressure-induced changes in transport properties of layered La1.2Ca1.8Mn2O7
K. V. Kamenev, M. R. Lees, G. Balakrishnan, and D. McK. Paul
pp. R12688-R12690 [View PDF (73 kB)]
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Resonance in a Tomonaga-Luttinger liquid
Inès Safi
pp. R12691-R12694 [View PDF (110 kB)]

Semiconductors I: bulk

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Silicon incorporation in a shallow donor center in hydrogenated Czochralski-grown Si crystals: An EPR study
V. P. Markevich, T. Mchedlidze, and M. Suezawa
pp. R12695-R12697 [View PDF (76 kB)]
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Semiconductor effective charges and dielectric constants in the tight-binding approach
Massimiliano Di Ventra and Pablo Fernández
pp. R12698-R12701 [View PDF (110 kB)]
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Transient uv electroluminescence from poly(p-phenylenevinylene) conjugated polymer induced by strong voltage pulses
Haim Chayet, Roman Pogreb, and Dan Davidov
pp. R12702-R12705 [View PDF (78 kB)]
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Interaction of vacancies with partial dislocations in silicon
Niklas Lehto and Sven Öberg
pp. R12706-R12709 [View PDF (72 kB)]
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Silicon network relaxation in amorphous hydrogenated silicon
Z. Remes̆, M. Vanĕc̆ek, A. H. Mahan, and R. S. Crandall
pp. R12710-R12713 [View PDF (86 kB)]
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Evidence for an enhanced magnetoresistance accompanying a continuous phase transition in semiconducting La0.67Mg0.33MnO3
X. Z. Zhou, H. P. Kunkel, J. H. Zhao, P. A. Stampe, and Gwyn Williams
pp. R12714-R12717 [View PDF (103 kB)]
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Femtosecond degenerate four-wave mixing of GaN on sapphire: Measurement of intrinsic exciton dephasing time
S. Pau, J. Kuhl, F. Scholz, V. Haerle, M. A. Khan, and C. J. Sun
pp. R12718-R12721 [View PDF (119 kB)]
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Transient four-wave-mixing spectroscopy on gallium nitride: Energy splittings of intrinsic excitonic resonances
R. Zimmermann, A. Euteneuer, J. Möbius, D. Weber, M. R. Hofmann, W. W. Rühle, E. O. Göbel, B. K. Meyer, H. Amano, and I. Akasaki
pp. R12722-R12724 [View PDF (57 kB)]

Semiconductors II: surfaces, interfaces, microstructures, and related topics

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Theory of surface morphology of wurtzite GaN (0001) surfaces
Krzysztof Rapcewicz, Marco Buongiorno Nardelli, and J. Bernholc
pp. R12725-R12728 [View PDF (131 kB)]
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Precursors of a Mott insulator in modulated quantum wires
Arkadi A. Odintsov, Yasuhiro Tokura, and Seigo Tarucha
pp. R12729-R12732 [View PDF (114 kB)]
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Correlation analysis of self-similarity in semiconductor billiards
R. P. Taylor, A. P. Micolich, R. Newbury, and T. M. Fromhold
pp. R12733-R12736 [View PDF (339 kB)]
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Assignment of rest-atom surface core-level shift through adsorption-site selectivity of methoxy on Si(111)-7×7
M. N. Piancastelli, J. J. Paggel, Chr. Weindel, M. Hasselblatt, and K. Horn
pp. R12737-R12740 [View PDF (81 kB)]
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Scaling and the metal-insulator transition in Si/SiGe quantum wells
J. Lam, M. D’Iorio, D. Brown, and H. Lafontaine
pp. R12741-R12743 [View PDF (75 kB)]
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Effects of interface asymmetry on hole subband degeneracies and spin-relaxation rates in quantum wells
L. Vervoort, R. Ferreira, and P. Voisin
pp. R12744-R12747 [View PDF (124 kB)]
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Elimination of spurious solutions from eight-band k⋅p theory
Bradley A. Foreman
pp. R12748-R12751 [View PDF (120 kB)]
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Electron population inversion in photon-assisted tunneling through a quantum wire
C. Niu and D. L. Lin
pp. R12752-R12755 [View PDF (91 kB)]
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From Tomonaga-Luttinger to Fermi liquid in transport through a tunneling barrier
V. V. Ponomarenko and N. Nagaosa
pp. R12756-R12759 [View PDF (134 kB)]
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One-dimensional plasmons in magnetic fields
E. Ulrichs, G. Biese, C. Steinebach, C. Schüller, D. Heitmann, and K. Eberl
pp. R12760-R12763 [View PDF (124 kB)]
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Metal-insulator transition at B=0 in p-type SiGe
P. T. Coleridge, R. L. Williams, Y. Feng, and P. Zawadzki
pp. R12764-R12767 [View PDF (104 kB)]
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Spin-flip excitations in the fractional-quantum-Hall-effect regime studied by polarized photoluminescence of charged excitons
D. Gekhtman, E. Cohen, Arza Ron, and L. N. Pfeiffer
pp. R12768-R12771 [View PDF (115 kB)]
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Pairing in the quantum Hall system
Kang-Hun Ahn and K. J. Chang
pp. R12772-R12775 [View PDF (109 kB)]
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Evidence for a spin transition in the ν=2/5 fractional quantum Hall effect
W. Kang, J. B. Young, S. T. Hannahs, E. Palm, K. L. Campman, and A. C. Gossard
pp. R12776-R12779 [View PDF (95 kB)]
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Coherent reflected pulses of exciton polaritons in multiple quantum wells at Brewster’s-angle incidence
Byung-Ryool Hyun, Tomobumi Mishina, Yasuaki Masumoto, and Masaaki Nakayama
pp. R12780-R12783 [View PDF (80 kB)]
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Odd-parity excitons in semiconductor superlattices
K. Bott, J. Hader, S. W. Koch, and P. Thomas
pp. R12784-R12786 [View PDF (82 kB)]
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Filling-factor dependence of the negatively-charged-exciton absorption in a CdTe quantum well
S. Lovisa, R. T. Cox, N. Magnea, and K. Saminadayar
pp. R12787-R12790 [View PDF (93 kB)]

Surface physics, low-dimensional systems, and related topics

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Surface structure of single-crystal cubic boron nitride (111) studied by LEED, EELS, and AES
Kian Ping Loh, Isao Sakaguchi, Mikka Nishitani-Gamo, Takashi Taniguchi, and Toshihiro Ando
pp. R12791-R12794 [View PDF (406 kB)]

ARTICLES

Electronic structure: wide-band, narrow-band, and strongly correlated systems

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Two interacting electrons in a quasiperiodic chain
S. N. Evangelou and D. E. Katsanos
pp. 12797-12804 [View PDF (388 kB)]
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Approximate occupation functions for density-functional calculations
D. M. C. Nicholson and X.-G. Zhang
pp. 12805-12810 [View PDF (163 kB)]
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Long-wavelength behavior of the exchange-correlation kernel in the Kohn-Sham theory of periodic systems
Ph. Ghosez, X. Gonze, and R. W. Godby
pp. 12811-12817 [View PDF (137 kB)]
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Electronic excitations in cupric oxide
Manabu Takahashi and Jun-ichi Igarashi
pp. 12818-12824 [View PDF (155 kB)]
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Self-consistent cumulant expansion for the electron gas
B. Holm and F. Aryasetiawan
pp. 12825-12831 [View PDF (136 kB)]
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Improved local-field corrections to the G0W approximation in jellium: Importance of consistency relations
M. Hindgren and C.-O. Almbladh
pp. 12832-12839 [View PDF (165 kB)]
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Phase separation as an instability of the Tomonaga-Luttinger liquid
Masaaki Nakamura and Kiyohide Nomura
pp. 12840-12846 [View PDF (180 kB)]
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Maximally localized generalized Wannier functions for composite energy bands
Nicola Marzari and David Vanderbilt
pp. 12847-12865 [View PDF (334 kB)]
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Accuracy and convergence properties of the extended linear augmented-plane-wave method
E. E. Krasovskii
pp. 12866-12873 [View PDF (167 kB)]
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Surface electronic structure with the linear methods of band theory
E. E. Krasovskii and W. Schattke
pp. 12874-12883 [View PDF (211 kB)]
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Theoretical description of spin-resolved appearance potential spectroscopy
H. Ebert and V. Popescu
pp. 12884-12892 [View PDF (227 kB)]
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Spin-dependent local density of empty electronic states in FeNi3
J. Reinmuth, F. Passek, V. N. Petrov, M. Donath, V. Popescu, and H. Ebert
pp. 12893-12898 [View PDF (118 kB)]
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Electron paramagnetic resonance and microwave conductivity in pyrolyzed polyacrylonitrile chains included in zeolites
Stéphane Esnouf, François Beuneu, Patricia Enzel, and Thomas Bein
pp. 12899-12904 [View PDF (96 kB)]
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de Haas–van Alphen effect in the organic metal κ-(BEDT-TSF)2Cu[N(CN)2]Br: Crossover to two-dimensional behavior in the complete-breakdown regime
N. Harrison, C. H. Mielke, D. G. Rickel, L. K. Montgomery, and T. Burgin
pp. 12905-12908 [View PDF (96 kB)]
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Interplay of Mott transition and ferromagnetism in the orbitally degenerate Hubbard model
Raymond Frésard and Gabriel Kotliar
pp. 12909-12915 [View PDF (161 kB)]
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Low-temperature transport, thermodynamic, and optical properties of FeSi
S. Paschen, E. Felder, M. A. Chernikov, L. Degiorgi, H. Schwer, H. R. Ott, D. P. Young, J. L. Sarrao, and Z. Fisk
pp. 12916-12930 [View PDF (296 kB)]
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Transition phenomenon in Ti2O3 using the discrete variational Xα cluster method and periodic shell model
H. Nakatsugawa and E. Iguchi
pp. 12931-12938 [View PDF (141 kB)]
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Electronic phase transitions in a one-dimensional spinless fermion model with competing interactions
A. K. Zhuravlev, M. I. Katsnelson, and A. V. Trefilov
pp. 12939-12946 [View PDF (147 kB)]
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Instability of the marginal commutative model of tunneling centers interacting with a metallic environment: Role of the electron-hole symmetry breaking
A. Zawadowski, G. Zaránd, P. Nozières, K. Vladár, and G. T. Zimányi
pp. 12947-12960 [View PDF (279 kB)]
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Peculiar low-temperature properties of metallic Nd2-xCexCuO4 caused by interactions between Nd moments and conduction electrons
E. Maiser, W. Mexner, R. Schäfer, T. Schreiner, P. Adelmann, G. Czjzek, J. L. Peng, and R. L. Greene
pp. 12961-12969 [View PDF (194 kB)]
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Delocalization transition via supersymmetry in one dimension
Leon Balents and Matthew P. A. Fisher
pp. 12970-12991 [View PDF (392 kB)]
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Off-resonant spectral hole burning in CaS:Eu by time-varying Coulomb fields
S. A. Basun, M. Raukas, U. Happek, A. A. Kaplyanskii, J. C. Vial, J. Rennie, W. M. Yen, and R. S. Meltzer
pp. 12992-12997 [View PDF (135 kB)]
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Carrier generation and compensation in Y- and Nb-doped CaTiO3 single crystals
K. Ueda, H. Yanagi, H. Hosono, and H. Kawazoe
pp. 12998-13005 [View PDF (152 kB)]
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Effect of configuration interaction on calculated polarized UV-VIS absorption spectra: A molecular dynamics based study
Mattias Klintenberg and John O. Thomas
pp. 13006-13011 [View PDF (148 kB)]
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Computationally based explanation of the peculiar magneto-optical properties of PtMnSb and related ternary compounds
V. N. Antonov, P. M. Oppeneer, A. N. Yaresko, A. Ya. Perlov, and T. Kraft
pp. 13012-13025 [View PDF (360 kB)]
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Nanoscopic tunneling contacts on mesoscopic multiprobe conductors
Thomas Gramespacher and Markus Büttiker
pp. 13026-13034 [View PDF (184 kB)]
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Understanding the isomer shift of Fe impurities in metallic hosts
L. A. Terrazos and S. Frota-Pesso⁁a
pp. 13035-13041 [View PDF (112 kB)]

Semiconductors I: bulk

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Magneto-optical investigations of Eu-based diluted magnetic lead chalcogenides
F. Geist, W. Herbst, C. Mejía-García, H. Pascher, R. Rupprecht, Y. Ueta, G. Springholz, G. Bauer, and M. Tacke
pp. 13042-13053 [View PDF (265 kB)]
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Electronic properties of the crystalline phases of the Sb2S3-Tl2S system
P. E. Lippens, J. Olivier-Fourcade, J. C. Jumas, A. Gheorghiu, S. Dupont, and C. Sénémaud
pp. 13054-13065 [View PDF (211 kB)]
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Dynamics associated with Bose-Einstein statistics of orthoexcitons generated by resonant excitations in cuprous oxide
M. Y. Shen, T. Yokouchi, S. Koyama, and T. Goto
pp. 13066-13072 [View PDF (139 kB)]
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Defect complexes in GaAs: First-principles calculations
A. Janotti, A. Fazzio, P. Piquini, and R. Mota
pp. 13073-13076 [View PDF (122 kB)]
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Electronic structure of defects and impurities in III-V nitrides. II. Be, Mg, and Si in cubic boron nitride
V. A. Gubanov, E. A. Pentaleri, C. Y. Fong, and B. M. Klein
pp. 13077-13086 [View PDF (241 kB)]
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Two-photon and three-photon spectroscopy of ZnO under uniaxial stress
J. Wrzesinski and D. Fröhlich
pp. 13087-13093 [View PDF (210 kB)]
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Strain broadening of the magnetization steps in diluted magnetic semiconductors
Yuri G. Rubo, M. F. Thorpe, and Normand Mousseau
pp. 13094-13102 [View PDF (192 kB)]
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Interplay between the magnetic and transport properties in the III-V diluted magnetic semiconductor Ga1-xMnxAs
A. Van Esch, L. Van Bockstal, J. De Boeck, G. Verbanck, A. S. van Steenbergen, P. J. Wellmann, B. Grietens, R. Bogaerts, F. Herlach, and G. Borghs
pp. 13103-13112 [View PDF (222 kB)]
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Magnetic-field-induced resonant coupling between 1s- and 3d-exciton states
A. El Ouazzani, D. Coquillat, J. P. Lascaray, Yu. G. Rubo, and A. V. Kavokin
pp. 13113-13117 [View PDF (120 kB)]
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Interactions of hydrogen molecules with bond-centered interstitial oxygen and another defect center in silicon
R. E. Pritchard, M. J. Ashwin, J. H. Tucker, R. C. Newman, E. C. Lightowlers, M. J. Binns, S. A. McQuaid, and R. Falster
pp. 13118-13125 [View PDF (185 kB)]
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Far-infrared reflection studies in ordered GaInP2
F. Alsina, H. M. Cheong, J. D. Webb, A. Mascarenhas, J. F. Geisz, and J. M. Olson
pp. 13126-13131 [View PDF (142 kB)]
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Structure and optical properties of the planar silicon compounds polysilane and Wöhler siloxene
U. Dettlaff-Weglikowska, W. Hönle, A. Molassioti-Dohms, S. Finkbeiner, and J. Weber
pp. 13132-13140 [View PDF (336 kB)]
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Dephasing of LO-phonon–plasmon hybrid modes in n-type GaAs
F. Vallée, F. Ganikhanov, and F. Bogani
pp. 13141-13146 [View PDF (121 kB)]
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Site- and symmetry-projected band structure measured by resonant inelastic soft x-ray scattering
J. Lüning, J.-E. Rubensson, C. Ellmers, S. Eisebitt, and W. Eberhardt
pp. 13147-13150 [View PDF (102 kB)]
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X-ray-absorption near-edge structure of CuGaSe2 and ZnSe: Experiment and theory
O. Šipr, P. Machek, A. Šimůnek, J. Vackář, and J. Horák
pp. 13151-13161 [View PDF (246 kB)]
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Interchain coupling and localized vibration modes in conjugated polymers of finite length
Shi-jie Xie, Jian-Hua Wei, De-Sheng Liu, Liang-Mo Mei, and D. L. Lin
pp. 13162-13166 [View PDF (125 kB)]
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Raman scattering on α-Sn: Dependence on isotopic composition
D. T. Wang, A. Göbel, J. Zegenhagen, and M. Cardona
pp. 13167-13171 [View PDF (138 kB)]
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As-vacancy interaction and ring mechanism of diffusion in Si
Oleg Pankratov, Hanchen Huang, Tomas Diaz de la Rubia, and Christian Mailhiot
pp. 13172-13176 [View PDF (102 kB)]
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Density-matrix approach to nonequilibrium free-carrier screening in semiconductors
U. Hohenester and W. Pötz
pp. 13177-13189 [View PDF (234 kB)]

Semiconductors II: surfaces, interfaces, microstructures, and related topics

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Initial oxygen reaction on Ge(100) 2×1 surfaces
T. Fukuda and T. Ogino
pp. 13190-13193 [View PDF (507 kB)]
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Phonons in {110} surfaces of III-V compound semiconductors
Hermann Nienhaus
pp. 13194-13201 [View PDF (375 kB)]
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Pinning behavior of gold-related levels in Si using Si1-xGex alloy layers
A. Mesli, P. Kringhøj, and A. Nylandsted Larsen
pp. 13202-13217 [View PDF (295 kB)]
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Conductance and its universal fluctuations in the directed network model at the crossover to the quasi-one-dimensional regime
Ilya A. Gruzberg, N. Read, and Subir Sachdev
pp. 13218-13226 [View PDF (187 kB)]
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Spectral functions of quantum dots in the integer and fractional quantum Hall regime
Arkadiusz Wójs and Pawel Hawrylak
pp. 13227-13234 [View PDF (240 kB)]
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Nonlinear transport through coupled double-quantum-dot systems
R. Kotlyar and S. Das Sarma
pp. 13235-13241 [View PDF (236 kB)]
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k⋅p finite-difference method: Band structures and cyclotron resonances of AlxGa1-xSb/InAs quantum wells
Shiow-Fon Tsay, Jih-Chen Chiang, Z. M. Chau, and Ikai Lo
pp. 13242-13251 [View PDF (247 kB)]
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Edge magnetoplasmons for very low temperatures and sharp density profiles
O. G. Balev and P. Vasilopoulos
pp. 13252-13262 [View PDF (272 kB)]
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Localization scaling relation in two dimensions: Comparison with experiment
F. W. Van Keuls, H. Mathur, H. W. Jiang, and A. J. Dahm
pp. 13263-13267 [View PDF (115 kB)]
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Sequential tunneling in doped superlattices: Fingerprints of impurity bands and photon-assisted tunneling
Andreas Wacker, Antti-Pekka Jauho, Stefan Zeuner, and S. James Allen
pp. 13268-13278 [View PDF (292 kB)]
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Microscopic picture of a chiral Luttinger liquid: Composite fermion theory of edge states
Yue Yu, Wenjun Zheng, and Zhongyuan Zhu
pp. 13279-13289 [View PDF (220 kB)]
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Application of Fermi-hypernetted-chain theory to composite-fermion quantum Hall states
O. Ciftja and S. Fantoni
pp. 13290-13295 [View PDF (142 kB)]
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Addition-spectrum oscillations in fractional quantum Hall dots
Eyal Goldmann and Scot R. Renn
pp. 13296-13300 [View PDF (156 kB)]
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Coulomb drag at the onset of Anderson insulators
Efrat Shimshoni
pp. 13301-13305 [View PDF (140 kB)]
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Infrared optical properties of mixed-phase thin films studied by spectroscopic ellipsometry using boron nitride as an example
M. Schubert, B. Rheinländer, E. Franke, H. Neumann, T. E. Tiwald, J. A. Woollam, J. Hahn, and F. Richter
pp. 13306-13313 [View PDF (204 kB)]
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Effect of carrier emission and retrapping on luminescence time decays in InAs/GaAs quantum dots
Weidong Yang, Roger R. Lowe-Webb, Hao Lee, and Peter C. Sercel
pp. 13314-13320 [View PDF (156 kB)]
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Excitonic properties of weakly coupled GaAs single quantum wells investigated with high-resolution photoluminescence excitation spectroscopy
L. Schrottke, H. T. Grahn, and K. Fujiwara
pp. 13321-13325 [View PDF (2,200 kB)]
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Valence-band photoemission from GaN(001) and GaAs: GaN surfaces
T. Strasser, F. Starrost, C. Solterbeck, and W. Schattke
pp. 13326-13334 [View PDF (288 kB)]
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Formation of the Zn/CdTe(100) interface: Interdiffusion, segregation, and Cd-Zn exchange studied by photoemission
C. Heske, U. Winkler, D. Eich, R. Fink, E. Umbach, Ch. Jung, and P. R. Bressler
pp. 13335-13345 [View PDF (224 kB)]
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Patterns in bistable resonant-tunneling structures
B. A. Glavin, V. A. Kochelap, and V. V. Mitin
pp. 13346-13359 [View PDF (302 kB)]
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Theoretical study of Landau-Zener tunneling at the M+N level crossing
Tatsuya Usuki
pp. 13360-13366 [View PDF (170 kB)]
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Second-harmonic spectroscopy of a Si(001) surface during calibrated variations in temperature and hydrogen coverage
J. I. Dadap, Z. Xu, X. F. Hu, M. C. Downer, N. M. Russell, J. G. Ekerdt, and O. A. Aktsipetrov
pp. 13367-13379 [View PDF (275 kB)]
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N K-edge x-ray-absorption study of heteroepitaxial GaN films
M. Katsikini, E. C. Paloura, M. Fieber-Erdmann, J. Kalomiros, T. D. Moustakas, H. Amano, and I. Akasaki
pp. 13380-13386 [View PDF (130 kB)]
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Atomic vibrations in thin (GaAs)n(AlAs)n superlattices
K. Lambert and G. P. Srivastava
pp. 13387-13392 [View PDF (167 kB)]
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Localization and fluctuations of local spectral density on treelike structures with large connectivity: Application to the quasiparticle line shape in quantum dots
Alexander D. Mirlin and Yan V. Fyodorov
pp. 13393-13404 [View PDF (229 kB)]
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Determination of interface preference by observation of linear-to-circular polarization conversion under optical orientation of excitons in type-II GaAs/AlAs superlattices
R. I. Dzhioev, H. M. Gibbs, E. L. Ivchenko, G. Khitrova, V. L. Korenev, M. N. Tkachuk, and B. P. Zakharchenya
pp. 13405-13413 [View PDF (228 kB)]
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Lateral superlattices as voltage-controlled traps for excitons
S. Zimmermann, A. O. Govorov, W. Hansen, J. P. Kotthaus, M. Bichler, and W. Wegscheider
pp. 13414-13421 [View PDF (362 kB)]
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Quantum Monte Carlo study of the transport through a small interacting system
Akira Oguri
pp. 13422-13427 [View PDF (181 kB)]
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Electron-phonon scattering rates in semiconductor quantum wells with thin AlAs layers
Cynthia R. McIntyre and T. L. Reinecke
pp. 13428-13433 [View PDF (135 kB)]
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Electronic states and magnetotransport in quantum waveguides with nonuniform magnetic fields
Ben-Yuan Gu, Wei-Dong Sheng, Xue-Hua Wang, and Jian Wang
pp. 13434-13441 [View PDF (194 kB)]

Surface physics, low-dimensional systems, and related topics

•
Growth mode and asymptotic smoothing of sputtered Fe/Au multilayers studied by x-ray diffuse scattering
R. Paniago, R. Forrest, P. C. Chow, S. C. Moss, S. S. P. Parkin, and D. Cookson
pp. 13442-13454 [View PDF (807 kB)]
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Surface-reconstruction-induced geometries of Si clusters
Efthimios Kaxiras
pp. 13455-13463 [View PDF (177 kB)]
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Scanning tunneling microscopy studies of the TiO2(110) surface: Structure and the nucleation growth of Pd
C. Xu, X. Lai, G. W. Zajac, and D. W. Goodman
pp. 13464-13482 [View PDF (8,269 kB)]
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Correlation between island-formation kinetics, surface roughening, and RHEED oscillation damping during GaAs homoepitaxy
Ch. Heyn, T. Franke, R. Anton, and M. Harsdorff
pp. 13483-13489 [View PDF (128 kB)]
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Temperature-dependent growth and structure of Cr deposited on Co(0001)
F. Scheurer, P. Ohresser, H. Bulou, J. P. Deville, B. Carrière, and A. Dobroiu
pp. 13490-13495 [View PDF (196 kB)]
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Calorimetric measurements of the energetics of Pb adsorption and adhesion to Mo(100)
J. T. Stuckless, D. E. Starr, D. J. Bald, and Charles T. Campbell
pp. 13496-13502 [View PDF (111 kB)]
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Ab initio study of the anomalies in the He-atom-scattering spectra of H/Mo(110) and H/W(110)
Bernd Kohler, Paolo Ruggerone, and Matthias Scheffler
pp. 13503-13518 [View PDF (2,223 kB)]
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Self-consistent Thomas-Fermi calculation of potential and current distributions in a two-dimensional Hall bar geometry
J. H. Oh and Rolf R. Gerhardts
pp. 13519-13528 [View PDF (223 kB)]
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Auger spectroscopy of hydrogenated diamond surfaces
I. L. Krainsky, V. M. Asnin, A. G. Petukhov, and M. Foygel
pp. 13529-13534 [View PDF (119 kB)]
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Atomic control of layer-by-layer epitaxial growth on SrTiO3(001): Molecular-dynamics simulations
Momoji Kubo, Yasunori Oumi, Ryuji Miura, Andras Stirling, Akira Miyamoto, Masashi Kawasaki, Mamoru Yoshimoto, and Hideomi Koinuma
pp. 13535-13542 [View PDF (1,065 kB)]
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Empirical potential for methyl-radical association with diamond surfaces
Pascal de Sainte Claire and William L. Hase
pp. 13543-13555 [View PDF (244 kB)]
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Relativistic calculations on the adsorption of CO on the (111) surfaces of Ni, Pd, and Pt within the zeroth-order regular approximation
P. H. T. Philipsen, E. van Lenthe, J. G. Snijders, and E. J. Baerends
pp. 13556-13562 [View PDF (127 kB)]
 
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