Physical Review B
– 15 August 1997
Volume 56, Issue 8
RAPID COMMUNICATIONS
Electronic structure: wide-band, narrow-band, and strongly correlated systems
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Scaling properties in highly anisotropic systems
Qiming Li, S. Katsoprinakis, E. N. Economou, and C. M. Soukoulis
pp.
R4297-R4300
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Electronic structures of Sr14-xCaxCu24O41
Masao Arai and Hirokazu Tsunetsugu
pp.
R4305-R4308
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Fermi-surface topology of κ-(BEDT-TTF)2Cu[N(CN)2]Br at ambient pressure
C. H. Mielke, N. Harrison, D. G. Rickel, A. H. Lacerda, R. M. Vestal, and L. K. Montgomery
pp.
R4309-R4312
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PDF (131 kB)]
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Effects of electronic correlations on the thermoelectric power of the cuprates
G. Hildebrand, T. J. Hagenaars, W. Hanke, S. Grabowski, and J. Schmalian
pp.
R4317-R4320
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Semiconductors I: bulk
Semiconductors II: surfaces, interfaces, microstructures, and related topics
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Blue luminescence from ultrathin GaAs layers embedded in AlAs
R. Schwabe, F. Pietag, V. Gottschalch, G. Wagner, M. Di Ventra, A. Bitz, and J. L. Staehli
pp.
R4329-R4332
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Theory of directed localization in one dimension
P. W. Brouwer, P. G. Silvestrov, and C. W. J. Beenakker
pp.
R4333-R4335
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Linear chain of coupled quantum dots
Kicheon Kang, Min-Chul Cha, and S.-R. Eric Yang
pp.
R4344-R4347
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Linear scaling calculation for optical-absorption spectra of large hydrogenated silicon nanocrystallites
Shintaro Nomura, Toshiaki Iitaka, Xinwei Zhao, Takuo Sugano, and Yoshinobu Aoyagi
pp.
R4348-R4350
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Quantized conductance of Si atomic wires
José-Luis Mozos, C. C. Wan, Gianni Taraschi, Jian Wang, and Hong Guo
pp.
R4351-R4354
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Electron spin resonance on a two-dimensional electron gas
N. Nestle, G. Denninger, M. Vidal, C. Weinzierl, K. Brunner, K. Eberl, and K. von Klitzing
pp.
R4359-R4362
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Ring microlasers from conducting polymers
S. V. Frolov, M. Shkunov, Z. V. Vardeny, and K. Yoshino
pp.
R4363-R4366
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Enhancement of spontaneous emission rates by three-dimensional photon confinement in Bragg microcavities
B. Ohnesorge, M. Bayer, A. Forchel, J. P. Reithmaier, N. A. Gippius, and S. G. Tikhodeev
pp.
R4367-R4370
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Adsorption kinetics of H on Si(111)7×7 by means of surface differential reflectivity
C. Beitia, W. Preyss, R. Del Sole, and Y. Borensztein
pp.
R4371-R4374
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Spontaneous-emission-lifetime alteration in InxGa1-xAs/GaAs vertical-cavity surface-emitting laser structures
Yoshihiko Hanamaki, Hiromu Kinoshita, Hidefumi Akiyama, Nagaatsu Ogasawara, and Yasuhiro Shiraki
pp.
R4379-R4382
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Effective exciton mobility edge in narrow quantum wells
U. Jahn, M. Ramsteiner, R. Hey, H. T. Grahn, E. Runge, and R. Zimmermann
pp.
R4387-R4390
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Surface physics, low-dimensional systems, and related topics
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Ballistic-electron-emission spectroscopy on an Fe/Au/Fe multilayer
T. Kinno, K. Tanaka, and K. Mizushima
pp.
R4391-R4393
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Modifications of the electronic structure of Ni/Cu(001) as a function of the film thickness
P. Srivastava, N. Haack, H. Wende, R. Chauvistré, and K. Baberschke
pp.
R4398-R4401
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Surface plasmon dispersion of Cl/Ag(111)
J.-S. Kim, Lieming Chen, L. L. Kesmodel, P. García-González, and A. Liebsch
pp.
R4402-R4405
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Electron transport and emission properties of C(100)
J. E. Yater, A. Shih, and R. Abrams
pp.
R4410-R4416
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ARTICLES
Electronic structure: wide-band, narrow-band, and strongly correlated systems
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Microscopic theory of exclusion statistics
Bill Sutherland
pp.
4422-4431
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Band picture of the spin-Peierls cuprate CuGeO3
Željko V. Šljivančanin, Zoran S. Popović, and Filip R. Vukajlović
pp.
4432-4438
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PDF (155 kB)]
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Curvature theorem for scattering states in charged systems
K. Moulopoulos and N. W. Ashcroft
pp.
4439-4446
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Bulk and surface electronic structure of 1T-TiS2 and 1T-TiSe2
C. M. Fang, R. A. de Groot, and C. Haas
pp.
4455-4463
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Efficient red- and orange-light-emitting diodes realized by excitation energy transfer from blue-light-emitting conjugated polymers
S. Tasch, E. J. W. List, C. Hochfilzer, G. Leising, P. Schlichting, U. Rohr, Y. Geerts, U. Scherf, and K. Müllen
pp.
4479-4483
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Dynamical mean-field theory of the small polaron
S. Ciuchi, F. de Pasquale, S. Fratini, and D. Feinberg
pp.
4494-4512
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Polaron band formation in the Holstein model
G. Wellein and H. Fehske
pp.
4513-4517
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Energy transfer and upconversions in cubic Cs2NaYCl6:Er3+ and Cs2NaErCl6
Z. Hasan, L. Biyikli, M. J. Sellars, G. A. Khodaparast, F. S. Richardson, and J. R. Quagliano
pp.
4518-4528
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Effective-field-theory approach to persistent currents
H. J. Bussemaker and T. R. Kirkpatrick
pp.
4529-4540
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Charge localization in disordered colossal-magnetoresistance manganites
Qiming Li, Jun Zang, A. R. Bishop, and C. M. Soukoulis
pp.
4541-4544
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Semiconductors I: bulk
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Charge-transfer range for photoexcitations in conjugated polymer/fullerene bilayers and blends
Dan Vacar, Eric S. Maniloff, Duncan W. McBranch, and Alan J. Heeger
pp.
4573-4577
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Carrier cooling and exciton formation in GaSe
S. Nüsse, P. Haring Bolivar, H. Kurz, V. Klimov, and F. Levy
pp.
4578-4583
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Valence-band spectra and electronic structure of CuFeO2
V. R. Galakhov, A. I. Poteryaev, E. Z. Kurmaev, V. I. Anisimov, St. Bartkowski, M. Neumann, Z. W. Lu, B. M. Klein, and Tong-Rong Zhao
pp.
4584-4591
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Concentration dependent and independent Si diffusion in ion-implanted GaAs
T. Ahlgren, J. Likonen, J. Slotte, J. Räisänen, M. Rajatora, and J. Keinonen
pp.
4597-4603
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Electron-paramagnetic-resonance study of silver-induced defects in silicon
P. N. Hai, T. Gregorkiewicz, C. A. J. Ammerlaan, and D. T. Don
pp.
4614-4619
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Copper-related defects in silicon: Electron-paramagnetic-resonance identification
P. N. Hai, T. Gregorkiewicz, C. A. J. Ammerlaan, and D. T. Don
pp.
4620-4625
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Self-organization in porous silicon formation
George C. John and Vijay A. Singh
pp.
4638-4641
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Semiconductors II: surfaces, interfaces, microstructures, and related topics
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Helium atom scattering from the Si(111) surface at high temperatures
G. Lange, C. A. Meli, J. P. Toennies, and E. F. Greene
pp.
4642-4647
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STM study of C2H2 adsorption on Si(001)
L. Li, C. Tindall, O. Takaoka, Y. Hasegawa, and T. Sakurai
pp.
4648-4655
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Theoretical studies of atomic vibrations on the Si(001)(2×1) surface
H. M. Tütüncü, S. J. Jenkins, and G. P. Srivastava
pp.
4656-4664
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Coupled electron and hole quantum wires
J. S. Thakur and D. Neilson
pp.
4671-4678
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Electron correlations in thin disordered quantum wires
J. S. Thakur and D. Neilson
pp.
4679-4686
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Biexcitons bound to single-island interface defects
O. Heller, Ph. Lelong, and G. Bastard
pp.
4702-4709
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Conductance and transparence of long molecular wires
M. Magoga and C. Joachim
pp.
4722-4729
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Dynamic nuclear polarization at the edge of a two-dimensional electron gas
David C. Dixon, Keith R. Wald, Paul L. McEuen, and M. R. Melloch
pp.
4743-4750
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Real-space renormalization of the Chalker-Coddington model
Daniel P. Arovas, Martin Janssen, and Boris Shapiro
pp.
4751-4759
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Quantum oscillations in mesoscopic rings with many chains
Yan Chen, Shi-Jie Xiong, and S. N. Evangelou
pp.
4778-4785
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Temperature dependence of the optical properties of CdTe
C. C. Kim, M. Daraselia, J. W. Garland, and S. Sivananthan
pp.
4786-4797
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Optical investigation of carrier tunneling in semiconductor nanostructures
V. Emiliani, S. Ceccherini, F. Bogani, M. Colocci, A. Frova, and Song Stone Shi
pp.
4807-4817
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Carrier transport in thin films of silicon nanoparticles
T. A. Burr, A. A. Seraphin, E. Werwa, and K. D. Kolenbrander
pp.
4818-4824
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Quantum transport by nonadiabatic Aharonov-Casher phase in mesoscopic rings
Taeseung Choi, Sam Young Cho, Chang-Mo Ryu, and Chul Koo Kim
pp.
4825-4829
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Effect of disorder in specific realizations of multibarrier random systems
Gastón García-Calderón, Roberto Romo, and Alberto Rubio
pp.
4845-4852
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Magneto-optical study on exciton screening in p-type AlxGa1-xAs/InyGa1-yAs quantum wells
M. Kemerink, P. M. Koenraad, P. C. M. Christianen, R. van Schaijk, J. C. Maan, and J. H. Wolter
pp.
4853-4862
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Ghost plasmon and negative dielectric function
Kazuo Takayanagi and Enrico Lipparini
pp.
4872-4877
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Surface physics, low-dimensional systems, and related topics
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Growth process of Ge on Si(100)-(2×1) in atomic-layer epitaxy from Ge2H6
Kuang-Hsin Huang, Tsai-Shian Ku, and Deng-Sung Lin
pp.
4878-4886
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Potassium-promoted oxidation of β-SiC
M. S. Ma, M. R. Ji, W. W. Cai, J. X. Wu, J. S. Zhu, X. M. Liu, B. F. Yang, P. S. He, B. K. Jin, and Y. Z. Ruan
pp.
4913-4918
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InAs on InP: Intermediate alloy formation and interface vibrations
Lucia G. Quagliano, Bernard Jusserand, and Daniela Orani
pp.
4919-4924
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Following the intercalation process of H2SO4 into pyrographite by x-ray microscopy
D. Erre, E. Bourelle, B. Claude-Montigny, A. Métrot, and J. Cazaux
pp.
4944-4948
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Structure and characteristics of C3N4 thin films prepared by rf plasma-enhanced chemical vapor deposition
Wu Dawei, Fu Dejun, Guo Huaixi, Zhang Zhihong, Meng Xianquan, and Fan Xiangjun
pp.
4949-4954
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Etch pit development and growth on GaAs(110)
B. Y. Han, C. Y. Cha, and J. H. Weaver
pp.
4966-4970
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Neutron low-index thin-film waveguides with antiresonant high-reflection layers
S. P. Pogossian, A. Menelle, H. Le Gall, J. Ben Youssef, and J. M. Desvignes
pp.
4971-4978
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Friction in a thin commensurate contact
Oleg M. Braun, Thierry Dauxois, and Michel Peyrard
pp.
4987-4995
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Impurity screening in carbon nanotubes
M. F. Lin and D. S. Chuu
pp.
4996-5002
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Au on Ag/Si(111)-(√3×√3)R30°: A spectromicroscopy study of a bimetal-silicon interface
S. Günther, A. Kolmakov, J. Kovac, M. Marsi, and M. Kiskinova
pp.
5003-5013
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