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PROLA » Phys. Rev. B » Volume 57 » Issue 19
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Physical Review B – 15 May 1998
Volume 57, Issue 19

BRIEF REPORTS

Electronic structure: wide-band, narrow-band, and strongly correlated systems

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Orthogonal polynomial projectors for the projector augmented wave method of electronic structure calculations
N. A. W. Holzwarth, G. E. Matthews, A. R. Tackett, and R. B. Dunning
pp. 11827-11830 [View PDF (111 kB)]
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Real-space renormalization-group study of the Hubbard model: A modified scheme
Bibhas Bhattacharyya and Shreekantha Sil
pp. 11831-11833 [View PDF (92 kB)]
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Gaussian-basis LDA and GGA calculations for alkali-metal equations of state
John E. Jaffe, Zijing Lin, and Anthony C. Hess
pp. 11834-11837 [View PDF (58 kB)]
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Mott-Peierls transition in the extended Peierls-Hubbard model
Eric Jeckelmann
pp. 11838-11841 [View PDF (85 kB)]
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Anderson transitions in three-dimensional disordered systems with randomly varying magnetic flux
Tohru Kawarabayashi, Bernhard Kramer, and Tomi Ohtsuki
pp. 11842-11845 [View PDF (79 kB)]
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Temperature-dependent core-level x-ray photoemission spectroscopy of the organic conductors (MeCl-DCNQI)2Cu, (MeBr-DCNQI)2Cu, and (DI-DCNQI)2Cu
O. Akaki, A. Chainani, T. Takahashi, Y. Kashimura, and R. Kato
pp. 11846-11849 [View PDF (107 kB)]
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Hall effect in crystalline Ni-Fe-Cr alloys showing resistivity minima
S. Chakraborty and A. K. Majumdar
pp. 11850-11853 [View PDF (90 kB)]
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Violation of Kohler’s rule by the magnetoresistance of a quasi-two-dimensional organic metal
Ross H. McKenzie, J. S. Qualls, S. Y. Han, and J. S. Brooks
pp. 11854-11857 [View PDF (93 kB)]
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Variable-range-hopping conduction and dielectric relaxation in disordered Sr0.97(Ti1-xFex)O3-δ
Chen Ang, J. R. Jurado, Zhi Yu, M. T. Colomer, J. R. Frade, and J. L. Baptista
pp. 11858-11861 [View PDF (101 kB)]
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Ensemble properties in quantum steady-state nonequilibrium theories
Carsten Heide and Nikolai F. Schwabe
pp. 11862-11865 [View PDF (145 kB)]

Semiconductors I: bulk

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Acceleration fluctuation scheme for diffusion noise sources within a generalized impedance field method
P. Shiktorov, E. Starikov, V. Gružinskis, L. Reggiani, T. González, J. Mateos, D. Pardo, and L. Varani
pp. 11866-11869 [View PDF (106 kB)]
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Angular dependence of impurity scattering in nonparabolic semiconductors
A. Dutta, P. S. Mallick, and D. Mukhopadhyay
pp. 11870-11871 [View PDF (62 kB)]
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High-magnetic-field effects on the terahertz mobility of hot electrons in n-type InSb
E. W. S. Caetano, E. A. Mendes, V. N. Freire, J. A. P. da Costa, and X. L. Lei
pp. 11872-11874 [View PDF (241 kB)]
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Transverse electric-field-induced magnetophonon resonance in n-type germanium
S. C. Lee, Y. B. Kang, G. Y. Hu, J. Y. Ryu, and S. D. Choi
pp. 11875-11878 [View PDF (144 kB)]

Semiconductors II: surfaces, interfaces, microstructures, and related topics

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Suppression of Ostwald ripening in In0.5Ga0.5As quantum dots on a vicinal (100) substrate
Byung Don Min, Yong Kim, Eun Kyu Kim, Suk-Ki Min, and Mann Jang Park
pp. 11879-11882 [View PDF (242 kB)]
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Surface structure of cesium adsorption on the Si(001) 2×1 surface
H. Hamamatsu, H. W. Yeom, T. Yokoyama, T. Kayama, and T. Ohta
pp. 11883-11886 [View PDF (129 kB)]
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Excited Wannier-Stark states in the optical absorption of a superlattice in an electric field
S. Glutsch and F. Bechstedt
pp. 11887-11890 [View PDF (350 kB)]
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Transport through an interacting quantum dot coupled to two superconducting leads
Kicheon Kang
pp. 11891-11894 [View PDF (136 kB)]
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Change of Hall conductance induced by band crossing
Ming-Yi Lee, Ming-Che Chang, and Tzay-Ming Hong
pp. 11895-11898 [View PDF (188 kB)]
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Tunneling spectrum of a strongly driven double-well diode
Mathias Wagner
pp. 11899-11902 [View PDF (109 kB)]
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Discontinuity in the phase evolution of electron transport in a quantum channel with attached quantum dots
Hongqi Xu and Weidong Sheng
pp. 11903-11906 [View PDF (119 kB)]
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Magnetoconductance of a quantum wire with several antidots: A transfer-matrix study
C. C. Wan, Tiago De Jesus, and Hong Guo
pp. 11907-11910 [View PDF (121 kB)]
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Spin-orbit interaction in a two-dimensional electron gas in a InAs/AlSb quantum well with gate-controlled electron density
J. P. Heida, B. J. van Wees, J. J. Kuipers, T. M. Klapwijk, and G. Borghs
pp. 11911-11914 [View PDF (110 kB)]
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Resistance resonance induced by electron-hole hybridization in a strongly coupled InAs/GaSb/AlSb heterostructure
L. J. Cooper, N. K. Patel, V. Drouot, E. H. Linfield, D. A. Ritchie, and M. Pepper
pp. 11915-11918 [View PDF (89 kB)]
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Raman study of the nitrided GaAs thin layers
Eui Kwan Koh, Young Ju Park, Eun Kyu Kim, Suk-Ki Min, and Sung Ho Choh
pp. 11919-11922 [View PDF (91 kB)]

Surface physics, low-dimensional systems, and related topics

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Edge-driven transition in the surface structure of nanoscale silicon
Sohrab Ismail-Beigi and Tomás Arias
pp. 11923-11926 [View PDF (193 kB)]
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Surface flatness and structure of the bc-cleaved plane of spin-Peierls material CuGeO3
I. Tsukada, N. Koide, Y. Sasago, and K. Uchinokura
pp. 11927-11930 [View PDF (139 kB)]
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Adsorption of water on MgO(100): A singular behavior
C. Girardet, P. N. M. Hoang, A. Marmier, and S. Picaud
pp. 11931-11934 [View PDF (115 kB)]
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In-plane magnetic anisotropy of bcc Co on GaAs(001)
Y. Z. Wu, H. F. Ding, C. Jing, D. Wu, G. L. Liu, V. Gordon, G. S. Dong, X. F. Jin, S. Zhu, and K. Sun
pp. 11935-11938 [View PDF (1,466 kB)]
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Charge transfer and doping-dependent hybridization of C60 on noble metals
B. W. Hoogenboom, R. Hesper, L. H. Tjeng, and G. A. Sawatzky
pp. 11939-11942 [View PDF (77 kB)]
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Electronic-momentum distribution in deformed sodium clusters
A. Rigo, M. Casas, F. Garcias, E. Moya de Guerra, and P. Sarriguren
pp. 11943-11946 [View PDF (103 kB)]
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Quasiclassical approach to the weak levitation of extended states in the quantum Hall effect
M. M. Fogler
pp. 11947-11950 [View PDF (120 kB)]
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Femtosecond dynamics of adsorbate charge-transfer processes as probed by high-resolution core-level spectroscopy
C. Keller, M. Stichler, G. Comelli, F. Esch, S. Lizzit, D. Menzel, and W. Wurth
pp. 11951-11954 [View PDF (85 kB)]

ARTICLES

Electronic structure: wide-band, narrow-band, and strongly correlated systems

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Charge-transfer metal-insulator transitions in the spin-1/2 Falicov-Kimball model
Woonki Chung and J. K. Freericks
pp. 11955-11961 [View PDF (163 kB)]
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First-order corrections to random-phase approximation GW calculations in silicon and diamond
R. T. M. Ummels, P. A. Bobbert, and W. van Haeringen
pp. 11962-11973 [View PDF (375 kB)]
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Multiple-excited-state absorption of V2+ in low-field crystals: An ab initio model-potential embedded-cluster study
Sara López-Moraza, Luis Seijo, and Zoila Barandiarán
pp. 11974-11979 [View PDF (112 kB)]
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Quantum Monte Carlo study of hole binding and pairing correlations in the three-band Hubbard model
M. Guerrero, J. E. Gubernatis, and Shiwei Zhang
pp. 11980-11988 [View PDF (187 kB)]
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Interplay between Hund coupling and Hubbard interaction in Sr2RuO4
Mario Cuoco, Canio Noce, and Alfonso Romano
pp. 11989-11993 [View PDF (119 kB)]
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Density-functional crystal orbital study on the structures and energetics of polyacetylene isomers
So Hirata, Hajime Torii, and Mitsuo Tasumi
pp. 11994-12001 [View PDF (128 kB)]
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Potential role of silanones in the photoluminescence-excitation, visible-photoluminescence-emission, and infrared spectra of porous silicon
James L. Gole and David A. Dixon
pp. 12002-12016 [View PDF (383 kB)]
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Total energy differences between SiC polytypes revisited
Sukit Limpijumnong and Walter R. L. Lambrecht
pp. 12017-12022 [View PDF (119 kB)]
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Systematic study of the electronic state in θ-type BEDT-TTF organic conductors by changing the electronic correlation
Hatsumi Mori, Shoji Tanaka, and Takehiko Mori
pp. 12023-12029 [View PDF (171 kB)]
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Electronic structure of CeSe probed by resonant photoemission spectroscopy: A test case for the single-impurity Anderson Hamiltonian
G. Chiaia, L. Duò, O. Tjernberg, M. Göthelid, M. Björkqvist, H. Kumigashira, S.-H. Yang, T. Takahashi, T. Suzuki, and I. Lindau
pp. 12030-12035 [View PDF (234 kB)]
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Electrical transport properties of stoichiometric YbP single crystal
D. X. Li, K. Sumiyama, K. Suzuki, A. Oyamada, K. Hashi, and T. Suzuki
pp. 12036-12040 [View PDF (107 kB)]
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Simple treatment of the metal-insulator transition: Effects of degeneracy, temperature, and applied magnetic field
Andrzej Klejnberg and Jozef Spałek
pp. 12041-12055 [View PDF (353 kB)]
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Local-field correction for the ferromagnetic electron gas
Jener J. S. Brito
pp. 12056-12068 [View PDF (261 kB)]
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Resonant electron-exchange excitations in transition-metal oxides
B. Fromme, M. Möller, C. Bethke, U. Brunokowski, and E. Kisker
pp. 12069-12076 [View PDF (171 kB)]
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Three-point bounds and other estimates for strongly nonlinear composites
P. Ponte Castañeda
pp. 12077-12083 [View PDF (191 kB)]
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Dissipation of core-hole momentum by phonons in soft-x-ray radiation processes from valence band to core level of wide-gap insulators
Tatsuya Minami and Keiichiro Nasu
pp. 12084-12093 [View PDF (223 kB)]
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Photoluminescence studies of Sm2+ in the stimulable phosphor SrS:Eu,Sm
Lawrence H. Robins and J. Ari Tuchman
pp. 12094-12103 [View PDF (195 kB)]
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Multichannel impurity scattering in a Tomonaga-Luttinger liquid
Yu-Liang Liu
pp. 12104-12110 [View PDF (183 kB)]
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Electron distribution in MgO probed by x-ray emission
P. Jonnard, F. Vergand, C. Bonnelle, E. Orgaz, and M. Gupta
pp. 12111-12118 [View PDF (145 kB)]
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Correlation effects in the quasi-one-dimensional charged Bose condensate
A. Gold and L. Calmels
pp. 12119-12126 [View PDF (150 kB)]
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Impurity bands in photonic insulators
N. Stefanou and A. Modinos
pp. 12127-12133 [View PDF (200 kB)]
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Ternary transition-metal aluminide alloy formation: The BiF3 structure
R. E. Watson, M. Weinert, and M. Alatalo
pp. 12134-12139 [View PDF (111 kB)]

Semiconductors I: bulk

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Diffusion quantum Monte Carlo calculations of the excited states of silicon
A. J. Williamson, Randolph Q. Hood, R. J. Needs, and G. Rajagopal
pp. 12140-12144 [View PDF (146 kB)]
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Stochastic model of plasma waves for a simple band structure in semiconductors
M. Zakari
pp. 12145-12150 [View PDF (142 kB)]
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Neutral-donor–bound-exciton complexes in ZnO crystals
D. C. Reynolds, D. C. Look, B. Jogai, C. W. Litton, T. C. Collins, W. Harsch, and G. Cantwell
pp. 12151-12155 [View PDF (112 kB)]
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Resonant and nonresonant polarons in bulk InSb
P. Pfeffer
pp. 12156-12163 [View PDF (178 kB)]
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Chlorine-impurity-related defects in ZnSe
S. Pöykkö, M. J. Puska, and R. M. Nieminen
pp. 12164-12168 [View PDF (674 kB)]
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DX-center transformation of Te donors in GaSb under hydrostatic pressure
H. Navarro-Contreras, F. de Anda-Salazar, Leon Hsu, and E. E. Haller
pp. 12169-12173 [View PDF (81 kB)]
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Nitrogen-impurity–native-defect complexes in ZnSe
S. Pöykkö, M. J. Puska, and R. M. Nieminen
pp. 12174-12180 [View PDF (666 kB)]
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Band-gap states of Ti, V, and Cr in 4H-SiC: Identification and characterization by elemental transmutation of radioactive isotopes
Norbert Achtziger and Wolfgang Witthuhn
pp. 12181-12196 [View PDF (255 kB)]
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Raman-scattering study of photoexcited plasma in semiconducting and semi-insulating InP
R. Cuscó, J. Ibáñez, and L. Artús
pp. 12197-12206 [View PDF (183 kB)]
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Ultrafast charge recombination in undoped amorphous hydrogenated silicon
Ilya A. Shkrob and Robert A. Crowell
pp. 12207-12218 [View PDF (263 kB)]
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Electron momentum distributions in elemental semiconductors probed by positrons
Z. Tang, M. Hasegawa, T. Chiba, M. Saito, H. Sumiya, Y. Kawazoe, and S. Yamaguchi
pp. 12219-12228 [View PDF (375 kB)]
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Phonon conductivity in As-, Sb-, and P-doped Ge for intermediate donor concentration
M. K. Roy and B. K. Deb
pp. 12229-12233 [View PDF (135 kB)]
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Calculation of vibrational lifetimes in amorphous silicon using molecular dynamics simulations
S. R. Bickham and J. L. Feldman
pp. 12234-12238 [View PDF (110 kB)]
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Giant magnetoresistance in zero-band-gap Hg1-xCdxTe
Tineke Thio, S. A. Solin, J. W. Bennett, D. R. Hines, M. Kawano, N. Oda, and M. Sano
pp. 12239-12244 [View PDF (140 kB)]

Semiconductors II: surfaces, interfaces, microstructures, and related topics

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Electronic and optical properties of laterally composition-modulated AlxIn1-xAs, GaxIn1-xP, and GaxIn1-xAs alloys
Yong Zhang and A. Mascarenhas
pp. 12245-12254 [View PDF (472 kB)]
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Influence of stress and defects on the silicon-terminated SiC(001) surface structure
Alessandra Catellani, Giulia Galli, François Gygi, and Fabio Pellacini
pp. 12255-12261 [View PDF (276 kB)]
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Vertical correlations and anticorrelations in multisheet arrays of two-dimensional islands
V. A. Shchukin, D. Bimberg, V. G. Malyshkin, and N. N. Ledentsov
pp. 12262-12274 [View PDF (252 kB)]
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Effects of interfacial charges on semiconductor films
A. M. Alencar, R. N. Costa Filho, V. N. Freire, and G. A. Farias
pp. 12275-12280 [View PDF (134 kB)]
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Pair-tunneling states in semiconductor quantum dots: Ground-state behavior in a magnetic field
Ernestine Lee, Aaron Puzder, M. Y. Chou, T. Uzer, and David Farrelly
pp. 12281-12284 [View PDF (136 kB)]
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Anharmonic decay of confined optical phonons in quantum dots
Xin-Qi Li and Yasuhiko Arakawa
pp. 12285-12290 [View PDF (151 kB)]
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Exciton fine structure in CdSe nanoclusters
K. Leung, S. Pokrant, and K. B. Whaley
pp. 12291-12301 [View PDF (219 kB)]
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Non-Abelian geometric phases and conductance of spin-3/2 holes
Daniel P. Arovas and Yuli Lyanda-Geller
pp. 12302-12305 [View PDF (129 kB)]
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Classical and quantum dynamics of electrons in open equilateral triangular billiards
L. Christensson, H. Linke, P. Omling, P. E. Lindelof, I. V. Zozoulenko, and K.-F. Berggren
pp. 12306-12313 [View PDF (575 kB)]
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Si intralayers at GaAs/AlAs and GaAs/GaAs junctions: Polar versus nonpolar interfaces
M. Moreno, H. Yang, M. Höricke, M. Alonso, J. A. Martín-Gago, R. Hey, K. Horn, J. L. Sacedón, and K. H. Ploog
pp. 12314-12323 [View PDF (436 kB)]
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Andreev reflection in the fractional quantum Hall effect
Nancy P. Sandler, Claudio de C. Chamon, and Eduardo Fradkin
pp. 12324-12332 [View PDF (273 kB)]
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Skyrmions in arbitrarily polarized quantum Hall states
Sudhansu S. Mandal and V. Ravishankar
pp. 12333-12337 [View PDF (135 kB)]
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Electron-electron interaction effect on the conductivity and the Hall conductivity of weakly disordered electron systems
Michael Reizer
pp. 12338-12344 [View PDF (161 kB)]
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Optical-phonon-induced frictional drag in coupled two-dimensional electron gases
Ben Yu-Kuang Hu
pp. 12345-12349 [View PDF (129 kB)]
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Edge-induced modification of tunnel mixing and resistance resonance in double-quantum-well strips
O. E. Raichev and F. T. Vasko
pp. 12350-12359 [View PDF (214 kB)]
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1/f noise in polycrystalline silicon thin films
Laurence Michelutti
pp. 12360-12363 [View PDF (94 kB)]
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Size dependence of exciton-exciton scattering in semiconductor quantum wires
W. Braun, M. Bayer, A. Forchel, O. M. Schmitt, L. Bányai, H. Haug, and A. I. Filin
pp. 12364-12368 [View PDF (131 kB)]
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Femtosecond relaxation kinetics of highly excited electronic wave packets in semiconductors
K. El Sayed, J. A. Kenrow, and C. J. Stanton
pp. 12369-12377 [View PDF (237 kB)]
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Effect of lateral confinement on valence-band mixing and polarization anisotropy in quantum wires
F. Vouilloz, D. Y. Oberli, M.-A. Dupertuis, A. Gustafsson, F. Reinhardt, and E. Kapon
pp. 12378-12387 [View PDF (357 kB)]
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Intrasubband and intersubband transitions in lightly and heavily doped GaAs/AlxGa1-xAs multiple quantum wells
Qin-Sheng Zhu, X. B. Wang, Z. T. Zhong, X. C. Zhou, Y. P. He, Z. P. Cao, G. Z. Zhang, J. Xiao, X. H. Sun, H. Z. Yang, and Q. G. Du
pp. 12388-12396 [View PDF (176 kB)]
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High-resolution surface-sensitive C 1s core-level spectra of clean and hydrogen-terminated diamond (100) and (111) surfaces
R. Graupner, F. Maier, J. Ristein, L. Ley, and Ch. Jung
pp. 12397-12409 [View PDF (336 kB)]
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Compositional ordering in SiGe alloy thin films
K. L. Whiteaker, I. K. Robinson, J. E. Van Nostrand, and D. G. Cahill
pp. 12410-12420 [View PDF (713 kB)]
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Growth mode in Si(100)-(2×1) epitaxy by low-temperature chemical-vapor deposition
Perng-Hung Wu and Deng-Sung Lin
pp. 12421-12427 [View PDF (1,564 kB)]
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Tunable polariton absorption of distributed feedback microcavities at room temperature
Tohru Fujita, Yoshihiro Sato, Tetsuya Kuitani, and Teruya Ishihara
pp. 12428-12434 [View PDF (165 kB)]
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Oblique roughness replication in strained SiGe/Si multilayers
V. Holý, A. A. Darhuber, J. Stangl, G. Bauer, J. Nützel, and G. Abstreiter
pp. 12435-12442 [View PDF (673 kB)]
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RHEED intensity oscillations observed during the growth of CaF2 on Si(111)
Andrzej Daniluk, Piotr Mazurek, Krzysztof Paprocki, and Paweł Mikołajczak
pp. 12443-12447 [View PDF (274 kB)]
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Path-integral approach to the scattering theory of quantum transport
D. Endesfelder
pp. 12448-12455 [View PDF (203 kB)]

Surface physics, low-dimensional systems, and related topics

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Tunneling currents and boundary conditions in ballistic-electron-emission microscopy
Katsuyoshi Kobayashi
pp. 12456-12468 [View PDF (256 kB)]
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Magnetic moments of Ni clusters
F. Aguilera-Granja, S. Bouarab, M. J. López, A. Vega, J. M. Montejano-Carrizales, M. P. Iñiguez, and J. A. Alonso
pp. 12469-12475 [View PDF (274 kB)]
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Adsorption mechanisms, structures, and growth regimes of an archetypal self-assembling system: Decanethiol on Au(111)
F. Schreiber, A. Eberhardt, T. Y. B. Leung, P. Schwartz, S. M. Wetterer, D. J. Lavrich, L. Berman, P. Fenter, P. Eisenberger, and G. Scoles
pp. 12476-12481 [View PDF (117 kB)]
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H-induced reconstructions on Pd(110)
V. Ledentu, W. Dong, P. Sautet, G. Kresse, and J. Hafner
pp. 12482-12491 [View PDF (453 kB)]
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Structural model for the Si(100)4×3-In surface phase
A. V. Zotov, A. A. Saranin, V. G. Lifshits, J.-T. Ryu, O. Kubo, H. Tani, M. Katayama, and K. Oura
pp. 12492-12496 [View PDF (335 kB)]
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Observation of domain structure and coarsening at Cu-Pd alloy vicinal surfaces
S. Goapper, L. Barbier, B. Salanon, A. Loiseau, and X. Torrelles
pp. 12497-12500 [View PDF (375 kB)]
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Self-assembled islands on strained systems: Control of formation, evolution, and spatial distribution
C. A. C. Mendonça, M. A. Cotta, E. A. Meneses, and M. M. G. Carvalho
pp. 12501-12505 [View PDF (1,320 kB)]
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Positron states and annihilation characteristics at the (100), (110), and (111) surfaces of alkali metals
N. G. Fazleev, J. L. Fry, and A. H. Weiss
pp. 12506-12519 [View PDF (483 kB)]
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Bond-orientational structure and melting signature in krypton physisorbed onto graphite at complete coverage
M. W. Roth
pp. 12520-12529 [View PDF (199 kB)]
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Epitaxial film growth of the charge-density-wave conductor Rb0.30MoO3 on SrTiO3(001)
A. J. Steinfort, H. S. J. van der Zant, A. B. Smits, O. C. Mantel, P. M. L. O. Scholte, and C. Dekker
pp. 12530-12535 [View PDF (679 kB)]
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Low-temperature growth morphology of singular and vicinal Ge(001)
Joseph E. Van Nostrand, S. Jay Chey, and David G. Cahill
pp. 12536-12543 [View PDF (859 kB)]
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High-resolution LEED profile analysis and diffusion barrier estimation for submonolayer homoepitaxy of Ag/Ag(100)
L. Bardotti, C. R. Stoldt, C. J. Jenks, M. C. Bartelt, J. W. Evans, and P. A. Thiel
pp. 12544-12549 [View PDF (353 kB)]
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Electronic excitations in alkali-metal overlayers. I. Unreconstructed low-temperature phase of Li/Al
H. Ishida and A. Liebsch
pp. 12550-12557 [View PDF (144 kB)]
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Electronic excitations in alkali-metal overlayers. II. Effects of substitutional adsorption of Na/Al(001)
H. Ishida and A. Liebsch
pp. 12558-12563 [View PDF (151 kB)]
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Sputtering of high-energy particles from the Ag{100} surface
Che-Chen Chang and Jiin-Yun Hsieh
pp. 12564-12572 [View PDF (188 kB)]
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Forward electron emission produced in grazing ion-surface collisions: Dependence on the surface topography
G. R. Gómez, E. A. Sánchez, and O. Grizzi
pp. 12573-12578 [View PDF (1,764 kB)]
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O- formation in grazing scattering from an Al(111) surface
C. Auth, H. Winter, A. G. Borisov, B. Bahrim, D. Teillet-Billy, and J. P. Gauyacq
pp. 12579-12587 [View PDF (213 kB)]
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Nanomechanical properties of Au (111), (001), and (110) surfaces
J. D. Kiely and J. E. Houston
pp. 12588-12594 [View PDF (277 kB)]
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Orientational ordering in films of molecular hydrogen on boron nitride: Thick (12-layer) films and bilayer films
Kiho Kim and N. S. Sullivan
pp. 12595-12610 [View PDF (1,598 kB)]
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Kinetic-energy functionals studied by surface calculations
L. Vitos, H. L. Skriver, and J. Kollár
pp. 12611-12615 [View PDF (103 kB)]

ERRATA

•
Erratum: Simple but efficient correlation functional from a model pair-correlation function [Phys. Rev. B 49, 7874 (1994)]
Emil I. Proynov and Dennis R. Salahub
pp. 12616 [View PDF (52 kB)]
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Erratum: Self-diffusion of adatoms, dimers, and vacancies on Cu(100) [Phys. Rev. B 56, 7643 (1997)]
Ghyslain Boisvert and Laurent J. Lewis
pp. 12617 [View PDF (40 kB)]
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Erratum: Evidence for an enhanced magnetoresistance accompanying a continuous phase transition in semiconducting La0.67Mg0.33MnO3 [Phys. Rev. B 56, 12 714 (1997)]
X. Z. Zhou, H. P. Kunkel, J. H. Zhao, P. A. Stampe, and Gwyn Williams
pp. 12617 [View PDF (40 kB)]
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Erratum: Full nonlinear closure for a hydrodynamic model of transport in silicon [Phys. Rev. B 57, 4456 (1998)]
M. Trovato and P. Falsaperla
pp. 12617 [View PDF (40 kB)]
 
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