Physical Review B
– 15 January 1998
Volume 57, Issue 3
BRIEF REPORTS
Electronic structure: wide-band, narrow-band, and strongly correlated systems
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Effects of electron correlations on the Hofstadter spectrum
Hyeonjin Doh and Sung-Ho Suck Salk
pp.
1312-1315
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High-resolution photoemission study of V2-yO3
Hyeong-Do Kim, H. Kumigashira, A. Ashihara, T. Takahashi, and Y. Ueda
pp.
1316-1319
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Simple model for complex structures
Per Söderlind, J. M. Wills, and O. Eriksson
pp.
1320-1323
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Bound state in a one-dimensional quantum sine-Gordon model
Qingshan Yuan, Yuguang Chen, Hong Chen, and Yumei Zhang
pp.
1324-1327
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X-ray-scattering study of the charge-density-wave structure in NbSe3 in high magnetic fields
V. Kiryukhin, D. Casa, B. Keimer, J. P. Hill, M. J. Higgins, and S. Bhattacharya
pp.
1332-1335
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Simple exactly solvable models of non-Fermi-liquids
D. Lidsky, J. Shiraishi, Y. Hatsugai, and M. Kohmoto
pp.
1340-1343
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Semiconductors I: bulk
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Theoretical study of the cinnabar phases in GaAs and GaP
A. Mujica, A. Muñoz, and R. J. Needs
pp.
1344-1347
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Semiconductors II: surfaces, interfaces, microstructures, and related topics
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Optical phonons in isotopic Ge studied by Raman scattering
J. M. Zhang, M. Giehler, A. Göbel, T. Ruf, M. Cardona, E. E. Haller, and K. Itoh
pp.
1348-1351
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Geometry and core-level shifts of an adsorbed Sb monolayer on GaAs(110)
Jun-Hyung Cho, Zhenyu Zhang, Sung-Hoon Lee, and Myung-Ho Kang
pp.
1352-1355
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STM tip-induced creation and annihilation of small Ge clusters and missing dimer vacancies on Ge(001)
H. J. W. Zandvliet, W. Wulfhekel, B. L. M. Hendriksen, B. J. Hattink, and Bene Poelsema
pp.
1356-1358
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In situ optical spectroscopy of Ga dimers on GaP, GaAs, and GaSb by surface chemical modulation
Pablo Aitor Postigo, Gaspar Armelles, Thomas Utzmeier, and Fernando Briones
pp.
1359-1361
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Spin effects in polarized luminescence at ν=1
F. Plentz, D. Heiman, L. N. Pfeiffer, and K. W. West
pp.
1370-1373
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Al0.15Ga0.85N/GaN heterostructures: Effective mass and scattering times
S. Elhamri, R. S. Newrock, D. B. Mast, M. Ahoujja, W. C. Mitchel, J. M. Redwing, M. A. Tischler, and J. S. Flynn
pp.
1374-1377
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Anisotropic transport of quantum Hall meron-pair excitations
Kyungsun Moon and Kieran Mullen
pp.
1378-1381
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Mechanism of porous-silicon luminescence
F. Bentosela, P. Exner, and V. A. Zagrebnov
pp.
1382-1385
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Time-resolved luminescence of InP quantum dots in a Ga0.5In0.5P matrix: Carrier injection from the matrix
Tsuyoshi Okuno, Hong-Wen Ren, Mitsuru Sugisaki, Kenichi Nishi, Shigeo Sugou, and Yasuaki Masumoto
pp.
1386-1389
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Direct observation of free-exciton thermalization in quantum-well structures
M. Umlauff, J. Hoffmann, H. Kalt, W. Langbein, J. M. Hvam, M. Scholl, J. Söllner, M. Heuken, B. Jobst, and D. Hommel
pp.
1390-1393
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Oxygen effect on optical properties of nanosize silicon clusters
A. B. Filonov, A. N. Kholod, V. E. Borisenko, A. L. Pushkarchuk, V. M. Zelenkovskii, F. Bassani, and F. Arnaud d’Avitaya
pp.
1394-1397
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Surface physics, low-dimensional systems, and related topics
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Stress and structure of Ni monolayers on W(110): The importance of lattice mismatch
D. Sander, C. Schmidthals, A. Enders, and J. Kirschner
pp.
1406-1409
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Defect generation in layer-by-layer-grown ZnSe films on Te-terminated GaAs(001) surfaces
Akihiro Ohtake, Li-Hsin Kuo, Kozo Kimura, Shiro Miwa, Tetsuji Yasuda, Chengguo Jin, Takafumi Yao, Kaoru Nakajima, and Kenji Kimura
pp.
1410-1413
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Electronic band structure of epitaxial √3×√3R30°ε-FeSi(111)/Si(111)
J. J. Hinarejos, P. Segovia, J. Alvarez, G. R. Castro, E. G. Michel, and R. Miranda
pp.
1414-1417
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Heterogeneous model for conduction in carbon nanotubes
A. B. Kaiser, G. Düsberg, and S. Roth
pp.
1418-1421
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ARTICLES
Electronic structure: wide-band, narrow-band, and strongly correlated systems
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Landau theory of stripe phases in cuprates and nickelates
Oron Zachar, S. A. Kivelson, and V. J. Emery
pp.
1422-1426
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Fractional occupancies and temperature in electronic-structure calculations
Michael Springborg, R. C. Albers, and Karla Schmidt
pp.
1427-1435
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Environment-dependent tight-binding model for molybdenum
H. Haas, C. Z. Wang, M. Fähnle, C. Elsässer, and K. M. Ho
pp.
1461-1470
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Electron-energy-loss spectra and the structural stability of nickel oxide: An LSDA+U study
S. L. Dudarev, G. A. Botton, S. Y. Savrasov, C. J. Humphreys, and A. P. Sutton
pp.
1505-1509
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ac conductance of a quantum wire with electron-electron interactions
G. Cuniberti, M. Sassetti, and B. Kramer
pp.
1515-1526
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Influence of alloy composition and local environment on the magneto-optical properties of CoxPd1-x alloys
S. Uba, A. N. Yaresko, L. Uba, A. Ya. Perlov, V. N. Antonov, R. Gontarz, and H. Ebert
pp.
1534-1538
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Photonic localization in one-dimensional k-component Fibonacci structures
R. W. Peng, Mu Wang, A. Hu, S. S. Jiang, G. J. Jin, and D. Feng
pp.
1544-1551
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Polarization-dependent nickel 2p x-ray-absorption spectra of La2NiO4+δ
Pieter Kuiper, J. van Elp, D. E. Rice, D. J. Buttrey, H.-J. Lin, and C. T. Chen
pp.
1552-1557
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Electronic structure of Sr2RuO4: X-ray fluorescence emission study
E. Z. Kurmaev, S. Stadler, D. L. Ederer, Y. Harada, S. Shin, M. M. Grush, T. A. Callcott, R. C. C. Perera, D. A. Zatsepin, N. Ovechkina, M. Kasai, Y. Tokura, T. Takahashi, K. Chandrasekaran, R. Vijayaraghavan, and U. V. Varadaraju
pp.
1558-1562
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Photoelectron spectroscopy of manganese-based Heusler alloys
D. Brown, M. D. Crapper, K. H. Bedwell, M. T. Butterfield, S. J. Guilfoyle, A. E. R. Malins, and M. Petty
pp.
1563-1571
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Electronic structure of one-dimensional cuprates
K. Maiti, D. D. Sarma, T. Mizokawa, and A. Fujimori
pp.
1572-1578
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Electronic structure of reduced titanium dioxide
A. T. Paxton and L. Thiên-Nga
pp.
1579-1584
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Semiconductors I: bulk
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Electronic structure of the deep boron acceptor in boron-doped 6H-SiC
A. v. Duijn-Arnold, T. Ikoma, O. G. Poluektov, P. G. Baranov, E. N. Mokhov, and J. Schmidt
pp.
1607-1619
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Semiconductors II: surfaces, interfaces, microstructures, and related topics
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Structure and width of Au-adsorbed narrow Si(111) terraces
Motoshi Shibata, Isao Sumita, and Masato Nakajima
pp.
1626-1630
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Interface structure of (001) and (113)A GaAs/AlAs superlattices
D. Lüerßen, A. Dinger, H. Kalt, W. Braun, R. Nötzel, K. Ploog, J. Tümmler, and J. Geurts
pp.
1631-1636
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Electron confinement potential in etched Si/SiGe quantum dots
S. Zanier, Y. Guldner, J. P. Vieren, G. Faini, E. Cambril, and Y. Campidelli
pp.
1664-1667
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Determination of the electronic phase coherence time in one-dimensional channels
J. A. Katine, M. J. Berry, R. M. Westervelt, and A. C. Gossard
pp.
1698-1702
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Observation of finite-thickness effects on the spin-density excitations in quantum wires
C. Steinebach, C. Schüller, G. Biese, D. Heitmann, and K. Eberl
pp.
1703-1706
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Polaronic effects on excitons in quantum wells
Ruisheng Zheng and Mitsuru Matsuura
pp.
1749-1761
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Photoluminescence signatures of negatively charged magnetoexcitons
James R. Chapman, Neil F. Johnson, and V. Nikos Nicopoulos
pp.
1762-1773
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Dynamics of excitons in CuBr nanocrystals: Spectral-hole burning and transient four-wave-mixing measurements
J. Valenta, J. Moniatte, P. Gilliot, B. Hönerlage, J. B. Grun, R. Levy, and A. I. Ekimov
pp.
1774-1783
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Exciton dephasing in ZnSe quantum wires
H. P. Wagner, W. Langbein, J. M. Hvam, G. Bacher, T. Kümmell, and A. Forchel
pp.
1797-1800
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Electron superconductivity in coupled electron-hole layers
J. S. Thakur, D. Neilson, and M. P. Das
pp.
1801-1804
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Semiclassical theory of the quantum Hall effect
F. Evers and W. Brenig
pp.
1805-1813
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Electron reflection and interference in the GaAs/AlAs-Al Schottky collector resonant-tunneling diode
A. J. North, E. H. Linfield, M. Y. Simmons, D. A. Ritchie, M. L. Leadbeater, J. H. Burroughes, C. L. Foden, and M. Pepper
pp.
1847-1854
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Surface physics, low-dimensional systems, and related topics
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Island morphology and adatom self-diffusion on Pt(111)
Ghyslain Boisvert, Laurent J. Lewis, and Matthias Scheffler
pp.
1881-1889
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Adatom dynamics and diffusion in a model of O/W(110)
I. Vattulainen, J. Merikoski, T. Ala-Nissila, and S. C. Ying
pp.
1896-1907
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Surface critical behavior of bcc binary alloys
R. Leidl and H. W. Diehl
pp.
1908-1921
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Charge transfer of slow H atoms interacting with Al: Dynamical charge evolution
J. Merino, N. Lorente, M. Yu. Gusev, F. Flores, M. Maazouz, L. Guillemot, and V. A. Esaulov
pp.
1947-1956
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Optical properties of gold clusters in the size range 2–4 nm
B. Palpant, B. Prével, J. Lermé, E. Cottancin, M. Pellarin, M. Treilleux, A. Perez, J. L. Vialle, and M. Broyer
pp.
1963-1970
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Tetragonal states from epitaxial strain on metal films
P. M. Marcus and P. Alippi
pp.
1971-1975
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Growth, structure, and magnetic properties of thin Mn films epitaxially grown on (001) bcc Fe
S. Andrieu, M. Finazzi, Ph. Bauer, H. Fischer, P. Lefevre, A. Traverse, K. Hricovini, G. Krill, and M. Piecuch
pp.
1985-1991
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