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PROLA » Phys. Rev. B » Volume 58 » Issue 12
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Physical Review B – 15 September 1998
Volume 58, Issue 12

RAPID COMMUNICATIONS

Electronic structure: wide-band, narrow-band, and strongly correlated systems

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Nonlocal dynamical correlations of strongly interacting electron systems
M. H. Hettler, A. N. Tahvildar-Zadeh, M. Jarrell, T. Pruschke, and H. R. Krishnamurthy
pp. R7475-R7479 [View PDF (111 kB)]
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Ab initio study of the dielectric properties of silicon and gallium arsenide using polarized Wannier functions
Pablo Fernández, Andrea Dal Corso, and Alfonso Baldereschi
pp. R7480-R7483 [View PDF (137 kB)]
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Coherent phonons from the CDW state in η-Mo4O11
Kisoda Kenji, Muneaki Hase, Hiroshi Harima, Shin-ichi Nakashima, Masahiko Tani, Kiyomi Sakai, Hiroshi Negishi, and Masasi Inoue
pp. R7484-R7487 [View PDF (98 kB)]
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Development of bond-length alternation in very large carbon rings: LDA pseudopotential results
Eric J. Bylaska, John H. Weare, and Ryoichi Kawai
pp. R7488-R7491 [View PDF (91 kB)]
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Percolation-dominated conductivity in a conjugated-polymer-carbon-nanotube composite
J. N. Coleman, S. Curran, A. B. Dalton, A. P. Davey, B. McCarthy, W. Blau, and R. C. Barklie
pp. R7492-R7495 [View PDF (58 kB)]
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Optical conductivity of the Kondo insulator YbB12: Gap formation and low-energy excitations
H. Okamura, S. Kimura, H. Shinozaki, T. Nanba, F. Iga, N. Shimizu, and T. Takabatake
pp. R7496-R7499 [View PDF (91 kB)]

Semiconductors II: surfaces, interfaces, microstructures, and related topics

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Triangular-tiled arrangement of 7×7 and ‘1×1’ domains on Si(111)
H. Hibino, Y. Homma, and T. Ogino
pp. R7500-R7503 [View PDF (777 kB)]
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Stability of the c(4×8) structure in the adsorption of Pb in the (100) surface of elemental semiconductors
Noboru Takeuchi
pp. R7504-R7507 [View PDF (597 kB)]
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Zeeman splitting of excitons and biexcitons in single In0.60Ga0.40As/GaAs self-assembled quantum dots
A. Kuther, M. Bayer, A. Forchel, A. Gorbunov, V. B. Timofeev, F. Schäfer, and J. P. Reithmaier
pp. R7508-R7511 [View PDF (98 kB)]
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Frequency-dependent shot noise as a probe of electron-electron interaction in mesoscopic diffusive contacts
K. E. Nagaev
pp. R7512-R7515 [View PDF (103 kB)]
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Electron refraction in ballistic electron-emission microscopy studied by a superlattice energy filter
J. Smoliner, R. Heer, C. Eder, and G. Strasser
pp. R7516-R7519 [View PDF (85 kB)]
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Properties of the apparent metal-insulator transition in two-dimensional systems
Y. Hanein, D. Shahar, J. Yoon, C. C. Li, D. C. Tsui, and Hadas Shtrikman
pp. R7520-R7523 [View PDF (91 kB)]
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Conductance peak distributions in quantum dots at finite temperature: Signatures of the charging energy
Y. Alhassid, M. Gökçedağ, and A. D. Stone
pp. R7524-R7527 [View PDF (111 kB)]
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Transition between static and dynamic electric-field domain formation in weakly coupled GaAs/AlAs superlattices
Naoki Ohtani, Norifumi Egami, Holger T. Grahn, Klaus H. Ploog, and Luis L. Bonilla
pp. R7528-R7531 [View PDF (386 kB)]
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Absence of floating delocalized states in a two-dimensional hole gas
S. C. Dultz, H. W. Jiang, and W. J. Schaff
pp. R7532-R7535 [View PDF (319 kB)]
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Spatial evolution of hot-electron relaxation in quantum Hall conductors
I. I. Kaya, G. Nachtwei, K. von Klitzing, and K. Eberl
pp. R7536-R7539 [View PDF (306 kB)]
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Optical studies of ultrashort-period GaAs/AlAs superlattices grown on (In,Ga)As pseudosubstrate
M. Rezki, A. M. Vasson, A. Vasson, P. Lefebvre, V. Calvo, R. Planel, and G. Patriarche
pp. R7540-R7543 [View PDF (89 kB)]

Surface physics, low-dimensional systems, and related topics

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Anomaly in the anisotropy of the aluminum work function
C. J. Fall, N. Binggeli, and A. Baldereschi
pp. R7544-R7547 [View PDF (92 kB)]
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Superstructure formation and faceting in the Cu(210)-O system studied by scanning tunneling microscopy
A. T. S. Wee, J. S. Foord, R. G. Egdell, and J. B. Pethica
pp. R7548-R7551 [View PDF (707 kB)]
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Azimuthal dependence of classical over-barrier hopping diffusion of hydrogen on a vicinal Ni(111) surface
E. Nabighian and X. D. Zhu
pp. R7552-R7555 [View PDF (102 kB)]
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Activation energy for the decay of two-dimensional islands on Cu(100)
Christian Klünker, James B. Hannon, Margret Giesen, Harald Ibach, Ghyslain Boisvert, and Laurent J. Lewis
pp. R7556-R7559 [View PDF (160 kB)]

ARTICLES

Electronic structure: wide-band, narrow-band, and strongly correlated systems

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Magnetic breakdown in the organic conductor α-(BEDT-TTF)2KHg(SCN)4 in magnetic fields of up to 60 T
M. M. Honold, N. Harrison, M.-S. Nam, J. Singleton, C. H. Mielke, M. Kurmoo, and P. Day
pp. 7560-7564 [View PDF (121 kB)]
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Real-space multiple-scattering calculation and interpretation of x-ray-absorption near-edge structure
A. L. Ankudinov, B. Ravel, J. J. Rehr, and S. D. Conradson
pp. 7565-7576 [View PDF (225 kB)]
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Ab initio molecular-dynamics method based on the restricted path integral: Application to the electron plasma and liquid alkali metal
Ki-dong Oh and P. A. Deymier
pp. 7577-7584 [View PDF (155 kB)]
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Electronic structure and exchange interactions in the manganese-based pyrochlore oxides
S. K. Mishra and S. Satpathy
pp. 7585-7592 [View PDF (185 kB)]
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Experimental and theoretical study of electron momentum density of K6C60 and comparison to pristine C60
M. Marangolo, J. Moscovici, G. Loupias, S. Rabii, S. C. Erwin, C. Hérold, J. F. Marêché, and Ph. Lagrange
pp. 7593-7598 [View PDF (133 kB)]
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Many-body band structure and Fermi surface of the Kondo lattice
R. Eder, O. Rogojanu, and G.A. Sawatzky
pp. 7599-7611 [View PDF (390 kB)]
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Charged and spin-excitation gaps in half-filled strongly correlated electron systems: A rigorous result
Guang-Shan Tian
pp. 7612-7618 [View PDF (174 kB)]
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Chiral liquids in one dimension: A non-Fermi-liquid class of fixed points
Natan Andrei, Michael R. Douglas, and Andrés Jerez
pp. 7619-7625 [View PDF (190 kB)]
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Electronic and phononic states of the Holstein-Hubbard dimer of variable length
M. Acquarone, J. R. Iglesias, M. A. Gusmão, C. Noce, and A. Romano
pp. 7626-7636 [View PDF (226 kB)]
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Model for aging in HCl-protonated polyaniline: Structure, conductivity, and composition studies
A. Wolter, P. Rannou, J. P. Travers, B. Gilles, and D. Djurado
pp. 7637-7647 [View PDF (183 kB)]
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Magneto-optical Kerr spectroscopy of palladium
A. N. Yaresko, L. Uba, S. Uba, A. Ya. Perlov, R. Gontarz, and V. N. Antonov
pp. 7648-7653 [View PDF (163 kB)]
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Biexcitons in π-conjugated oligomers: Intensity-dependent femtosecond transient-absorption study
V. I. Klimov, D. W. McBranch, N. Barashkov, and J. Ferraris
pp. 7654-7662 [View PDF (210 kB)]
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Application of relativistic scattering theory of x rays to diffraction anomalous fine structure in Cu
E. Arola and P. Strange
pp. 7663-7667 [View PDF (123 kB)]
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Polarized x-ray-absorption spectra of TiS2, TiSe2, and TiTe2
S. Bocharov, G. Dräger, D. Heumann, A. Šimůnek, and O. Šipr
pp. 7668-7674 [View PDF (189 kB)]
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High-resolution angle-resolved photoemission study of LaSb
H. Kumigashira, Hyeong-Do Kim, T. Ito, A. Ashihara, T. Takahashi, T. Suzuki, M. Nishimura, O. Sakai, Y. Kaneta, and H. Harima
pp. 7675-7680 [View PDF (1,779 kB)]
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Gauss, Wannier, and ultralocalized functions
P. Zeiner, R. Dirl, and B. L. Davies
pp. 7681-7688 [View PDF (228 kB)]
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Comprehensive analysis of intermolecular charge-transfer excited states in C60 and C70 films
S. Kazaoui, N. Minami, Y. Tanabe, H. J. Byrne, A. Eilmes, and P. Petelenz
pp. 7689-7700 [View PDF (189 kB)]

Semiconductors I: bulk

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Hybrid density-functional study of the vibrational frequency of a H2 molecule at the tetrahedral site of silicon
Yasuharu Okamoto, Mineo Saito, and Atsushi Oshiyama
pp. 7701-7706 [View PDF (116 kB)]
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Optically detected magnetic resonance study of an arsenic-antisite–arsenic-vacancy complex in GaAs
F. K. Koschnick, K.-H. Wietzke, and J.-M. Spaeth
pp. 7707-7716 [View PDF (429 kB)]
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Si-C atomic bond and electronic band structure of a cubic Si1-yCy alloy
Y. Fu, M. Willander, P. Han, T. Matsuura, and J. Murota
pp. 7717-7722 [View PDF (147 kB)]
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Neutral interstitial iron center in silicon studied by Zeeman spectroscopy
AnnaLena Thilderkvist, Günter Grossmann, Mats Kleverman, and Hermann G. Grimmeiss
pp. 7723-7733 [View PDF (279 kB)]
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Oxygen isoelectronic impurities in ZnTe: Photoluminescence and absorption spectroscopy
M. J. Seong, I. Miotkowski, and A. K. Ramdas
pp. 7734-7739 [View PDF (130 kB)]
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Ultrafast charge separation in β-substituted sexithiophene amorphous films
G. Lanzani, G. Cerullo, S. Stagira, S. De Silvestri, and F. Garnier
pp. 7740-7744 [View PDF (121 kB)]
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EPR and IR spectral properties of hydrogen-associated bulk and surface defects in SiO2: Ab initio calculations
Gianfranco Pacchioni and Mirko Vitiello
pp. 7745-7752 [View PDF (287 kB)]
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Carrier diffusion in Cd1-xMnxTe
C. Moussu, I. Zaquine, A. Maruani, and R. Frey
pp. 7753-7760 [View PDF (200 kB)]
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Comparison of calculated optical response in cubic and hexagonal II-VI semiconductors
James L. P. Hughes and J. E. Sipe
pp. 7761-7767 [View PDF (191 kB)]
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Time-dependent heat diffusion in semiconductors by electrons and phonons
G. González de la Cruz and Yu. G. Gurevich
pp. 7768-7773 [View PDF (133 kB)]
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Transport properties of polyaniline-cellulose-acetate blends
Jérôme Planès, Andreas Wolter, Yasmina Cheguettine, Adam Proń, Françoise Genoud, and Maxime Nechtschein
pp. 7774-7785 [View PDF (310 kB)]
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Thermopower investigation of n- and p-type GaN
M. S. Brandt, P. Herbst, H. Angerer, O. Ambacher, and M. Stutzmann
pp. 7786-7791 [View PDF (131 kB)]
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Coexistence of neutral and charged arenes in conducting diperylene hexafluorophosphate
Gerda Fischer and Elmar Dormann
pp. 7792-7794 [View PDF (81 kB)]

Semiconductors II: surfaces, interfaces, microstructures, and related topics

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Reflection anisotropy spectroscopy study of the near-surface electric fields in undoped, n- and p-doped low-temperature grown GaAs (001)
Todd Holden, W. D. Sun, Fred H. Pollak, J. L. Freeouf, D. McInturff, and J. M. Woodall
pp. 7795-7798 [View PDF (94 kB)]
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Comparison between ab initio theory and scanning tunneling microscopy for (110) surfaces of III-V semiconductors
B. Engels, P. Richard, K. Schroeder, S. Blügel, Ph. Ebert, and K. Urban
pp. 7799-7815 [View PDF (641 kB)]
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Gauge-invariant grid discretization of the Schrödinger equation
Michele Governale and Carlo Ungarelli
pp. 7816-7821 [View PDF (136 kB)]
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Interface effects on magnetopolarons in GaAs/AlxGa1-xAs quantum wells at high magnetic fields
G. Q. Hai, F. M. Peeters, N. Studart, Y. J. Wang, and B. D. McCombe
pp. 7822-7828 [View PDF (154 kB)]
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Binding energies of ground and excited donor states bound to X valleys in GaAs/AlAs type-II quantum wells
Gleise N. Carneiro and Gerald Weber
pp. 7829-7833 [View PDF (128 kB)]
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Localization at interfaces of imperfect AlSb/InAs heterostructures
M. J. Shaw
pp. 7834-7843 [View PDF (1,737 kB)]
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Weak-localization magnetoresistance in quench-condensed lithium films
Eric D. Black and John C. Price
pp. 7844-7849 [View PDF (130 kB)]
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Properties of CdSe nanocrystal dispersions in the dilute regime: Structure and interparticle interactions
Hedi Mattoussi, Andrew W. Cumming, Christopher B. Murray, Moungi G. Bawendi, and Raymond Ober
pp. 7850-7863 [View PDF (292 kB)]
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Heterojunction band offsets and Schottky-barrier heights: Tersoff’s theory in the presence of strain
C. Ohler, C. Daniels, A. Förster, and H. Lüth
pp. 7864-7871 [View PDF (145 kB)]
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Quantum point contact on graphite surface
Ç. Kılıç, H. Mehrez, and S. Ciraci
pp. 7872-7881 [View PDF (328 kB)]
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Cotunneling and renormalization effects for the single-electron transistor
Jürgen König, Herbert Schoeller, and Gerd Schön
pp. 7882-7892 [View PDF (231 kB)]
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Dual response models for the fractional quantum Hall effect
L. Cooper, I. I. Kogan, A. Lopez, and R. J. Szabo
pp. 7893-7897 [View PDF (119 kB)]
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Fermi-hypernetted-chain study of unprojected wave functions to describe the half-filled state of the fractional quantum Hall effect
O. Ciftja and S. Fantoni
pp. 7898-7905 [View PDF (185 kB)]
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Influence of the exchange reaction on the electronic structure of GaN/Al junctions
S. Picozzi, A. Continenza, S. Massidda, A. J. Freeman, and N. Newman
pp. 7906-7912 [View PDF (283 kB)]
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Resonant Raman scattering and photoluminescence in SiOx/CdSe multiple quantum wells
D. Nesheva, C. Raptis, and Z. Levi
pp. 7913-7920 [View PDF (134 kB)]
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Size-dependent near-infrared photoluminescence from Ge nanocrystals embedded in SiO2 matrices
Shinji Takeoka, Minoru Fujii, Shinji Hayashi, and Keiichi Yamamoto
pp. 7921-7925 [View PDF (329 kB)]
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Role of the exchange of carriers in elastic exciton-exciton scattering in quantum wells
C. Ciuti, V. Savona, C. Piermarocchi, A. Quattropani, and P. Schwendimann
pp. 7926-7933 [View PDF (227 kB)]
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Coplanar and grazing incidence x-ray-diffraction investigation of self-organized SiGe quantum dot multilayers
V. Holý, A. A. Darhuber, J. Stangl, S. Zerlauth, F. Schäffler, G. Bauer, N. Darowski, D. Lübbert, U. Pietsch, and I. Vávra
pp. 7934-7943 [View PDF (1,711 kB)]
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Dissociative adsorption of NH3 on Si(001)-(2×1)
R. Miotto, G. P. Srivastava, and A. C. Ferraz
pp. 7944-7949 [View PDF (673 kB)]
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Cl2 dissociation on Si(100)-(2×1): A statistical study by scanning tunneling microscopy
I. Lyubinetsky, Z. Dohnálek, W. J. Choyke, and J. T. Yates, Jr.
pp. 7950-7957 [View PDF (7,444 kB)]
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Surface acoustic waves in two-dimensional periodic elastic structures
Yukihiro Tanaka and Shin-ichiro Tamura
pp. 7958-7965 [View PDF (203 kB)]
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Hydrogen-boron interactions in p-type diamond
J. Chevallier, B. Theys, A. Lusson, C. Grattepain, A. Deneuville, and E. Gheeraert
pp. 7966-7969 [View PDF (71 kB)]
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Binding energy of bound excitons D0X in quantum wells
J. L. Dunn, C. A. Bates, M. J. Pye, D. Boffety, A.-M. Vasson, A. Vasson, and J. Leymarie
pp. 7970-7977 [View PDF (160 kB)]
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Degenerate four-wave mixing measurements on an exciton-photon coupled system in a semiconductor microcavity
Masayuki Shirane, C. Ramkumar, Yu. P. Svirko, Hidekatsu Suzuura, Shin Inouye, Ryo Shimano, Takao Someya, Hiroyuki Sakaki, and Makoto Kuwata-Gonokami
pp. 7978-7985 [View PDF (200 kB)]
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Polaron in a spherical quantum dot embedded in a nonpolar matrix
Kazunori Oshiro, Koji Akai, and Mitsuru Matsuura
pp. 7986-7993 [View PDF (178 kB)]
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Mesoscopic pointlike defects in semiconductors: Deep-level energies
D. D. Nolte
pp. 7994-8001 [View PDF (157 kB)]
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Edge and bulk electron states in a quasi-one-dimensional metal in a magnetic field: The semi-infinite Wannier-Stark ladder
Victor M. Yakovenko and Hsi-Sheng Goan
pp. 8002-8008 [View PDF (167 kB)]
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Strong localization of electrons in quasi-one-dimensional conductors
Yu. B. Khavin, M. E. Gershenson, and A. L. Bogdanov
pp. 8009-8019 [View PDF (225 kB)]
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Electrical band-gap energy of porous silicon and the band offsets at the porous-silicon/crystalline-silicon heterojunction measured versus sample temperature
J. T. Frederiksen, P. G. Melcher, and E. Veje
pp. 8020-8024 [View PDF (80 kB)]

Surface physics, low-dimensional systems, and related topics

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X-ray speckles from an optical grating
Binhua Lin, Mark L. Schlossman, Mati Meron, Scott M. Williams, Zhengqing Huang, and P. James Viccaro
pp. 8025-8037 [View PDF (299 kB)]
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First-principles theory of inelastic currents in a scanning tunneling microscope
K. Stokbro, Ben Yu-Kuang Hu, C. Thirstrup, and X. C. Xie
pp. 8038-8041 [View PDF (145 kB)]
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Scanning tunneling microscopy of the misfit-layer compound (SmS)1.19NbS2
Youichi Ohno
pp. 8042-8049 [View PDF (1,119 kB)]
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First-principles study of the surfaces of zirconia
A. Christensen and Emily A. Carter
pp. 8050-8064 [View PDF (2,278 kB)]
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Structure and microstructure of La1-xCaxMnO3-δ thin films prepared by pulsed laser deposition
O. I. Lebedev, G. Van Tendeloo, S. Amelinckx, B. Leibold, and H.-U. Habermeier
pp. 8065-8074 [View PDF (3,603 kB)]
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Relaxations of TiO2- and SrO-terminated SrTiO3 (001) surfaces
Zhi-Qiang Li, Jia-Lin Zhu, C. Q. Wu, Z. Tang, and Yoshiyuki Kawazoe
pp. 8075-8078 [View PDF (89 kB)]
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Electron relaxation in disordered gold films
B. I. Belevtsev, Yu. F. Komnik, and E. Yu. Beliayev
pp. 8079-8086 [View PDF (174 kB)]
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Derivation of inelastic-electron-scattering cross sections from quantitative analysis of reflection-electron-energy-loss spectra
Y. F. Chen
pp. 8087-8096 [View PDF (223 kB)]
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Calculations of near-edge x-ray-absorption spectra of gas-phase and chemisorbed molecules by means of density-functional and transition-potential theory
L. Triguero, L. G. M. Pettersson, and H. Ågren
pp. 8097-8110 [View PDF (268 kB)]
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Deformations of quasi-two-dimensional electron gas clusters
S. M. Reimann, M. Koskinen, J. Helgesson, P. E. Lindelof, and M. Manninen
pp. 8111-8119 [View PDF (284 kB)]
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Analysis of quantum conductance of carbon nanotube junctions by the effective-mass approximation
Ryo Tamura and Masaru Tsukada
pp. 8120-8124 [View PDF (138 kB)]
 
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