Physical Review B
– 15 November 1998
Volume 58, Issue 19
BRIEF REPORTS
Electronic structure: wide-band, narrow-band, and strongly correlated systems
Semiconductors I: bulk
•
Finite-temperature molecular-dynamics study of unstable stacking fault free energies in silicon
M. de Koning, A. Antonelli, Martin Z. Bazant, Efthimios Kaxiras, and J. F. Justo
pp.
12555-12558
[ View
PDF (64 kB)]
•
Core reconstruction of the 90° partial dislocation in nonpolar semiconductors
R. W. Nunes, J. Bennetto, and David Vanderbilt
pp.
12563-12566
[ View
PDF (322 kB)]
•
Deep acceptors trapped at threading-edge dislocations in GaN
J. Elsner, R. Jones, M. I. Heggie, P. K. Sitch, M. Haugk, Th. Frauenheim, S. Öberg, and P. R. Briddon
pp.
12571-12574
[ View
PDF (108 kB)]
•
Piezoreflectance study of band-edge excitons of ReS2-xSex single crystals
C. H. Ho, Y. S. Huang, P. C. Liao, and K. K. Tiong
pp.
12575-12578
[ View
PDF (92 kB)]
•
Pressure dependence of the direct band gap in tetrahedral semiconductors
M. D. Frogley, J. L. Sly, and D. J. Dunstan
pp.
12579-12582
[ View
PDF (89 kB)]
Semiconductors II: surfaces, interfaces, microstructures, and related topics
•
Molecular-dynamics studies on defect-formation processes during crystal growth of silicon from melt
Manabu Ishimaru, Shinji Munetoh, Teruaki Motooka, Koji Moriguchi, and Akira Shintani
pp.
12583-12586
[ View
PDF (130 kB)]
•
Disordering of Si(111) at high temperatures
H. Hibino, K. Sumitomo, T. Fukuda, Y. Homma, and T. Ogino
pp.
12587-12589
[ View
PDF (56 kB)]
•
Electronic signature of the pentagonal rings in silicon clathrate phases: Comparison with cluster-assembled films
P. Mélinon, P. Kéghélian, X. Blase, J. Le Brusc, A. Perez, E. Reny, C. Cros, and M. Pouchard
pp.
12590-12593
[ View
PDF (128 kB)]
•
Electronic structure of GaSb/GaAs quantum domes
S. M. North, P. R. Briddon, M. A. Cusack, and M. Jaros
pp.
12601-12604
[ View
PDF (60 kB)]
•
Conductance fluctuations at the fractional quantum Hall plateau transitions
Hae-Young Kee, Yong Baek Kim, Elihu Abrahams, and R. N. Bhatt
pp.
12605-12608
[ View
PDF (98 kB)]
•
Electron mobility in a GaAs/AlAs quantum well with a thin AlAs middle barrier
X. F. Wang, I. C. da Cunha Lima, and X. L. Lei
pp.
12609-12612
[ View
PDF (117 kB)]
•
Quantum electrodynamic treatment of photon-assisted tunneling
C. L. Foden and D. M. Whittaker
pp.
12617-12620
[ View
PDF (95 kB)]
•
Many-body correlations probed by plasmon-enhanced drag measurements in double-quantum-well structures
H. Noh, S. Zelakiewicz, X. G. Feng, T. J. Gramila, L. N. Pfeiffer, and K. W. West
pp.
12621-12624
[ View
PDF (71 kB)]
•
Two-photon-excited photoluminescence from porous silicon
J. Diener, Y. R. Shen, D. I. Kovalev, G. Polisski, and F. Koch
pp.
12629-12632
[ View
PDF (112 kB)]
•
Charged exciton dynamics in GaAs quantum wells
G. Finkelstein, V. Umansky, I. Bar-Joseph, V. Ciulin, S. Haacke, J.-D. Ganière, and B. Deveaud
pp.
12637-12640
[ View
PDF (95 kB)]
Surface physics, low-dimensional systems, and related topics
•
Low-temperature epitaxial growth of β-SiC by multiple-energy ion implantation
Z. J. Zhang, H. Naramoto, A. Miyashita, B. Stritzker, and J. K. N. Lindner
pp.
12652-12654
[ View
PDF (72 kB)]
•
Structure of the Al(111)-(√3×√3)R30°-Cs phase
M. M. Nielsen, J. Burchhardt, D. L. Adams, and J. N. Andersen
pp.
12655-12658
[ View
PDF (142 kB)]
•
Potassium-induced removal of the Ni(100)(2×2)p4g-N reconstruction determined by surface x-ray diffraction
E. Dudzik, A. G. Norris, R. McGrath, G. Charlton, G. Thornton, B. Murphy, T. S. Turner, and D. Norman
pp.
12659-12662
[ View
PDF (99 kB)]
•
Surface diffusion coefficients by thermodynamic integration: Cu on Cu(100)
Ghyslain Boisvert, Normand Mousseau, and Laurent J. Lewis
pp.
12667-12670
[ View
PDF (93 kB)]
•
Origins of positronium emitted from SiO2
Y. Nagashima, Y. Morinaka, T. Kurihara, Y. Nagai, T. Hyodo, T. Shidara, and K. Nakahara
pp.
12676-12679
[ View
PDF (75 kB)]
ARTICLES
Electronic structure: wide-band, narrow-band, and strongly correlated systems
•
Spectra and total energies from self-consistent many-body perturbation theory
Arno Schindlmayr, Thomas J. Pollehn, and R. W. Godby
pp.
12684-12690
[ View
PDF (148 kB)]
•
Density-matrix renormalization using three classes of block states
Marie-Bernadette Lepetit and G. M. Pastor
pp.
12691-12698
[ View
PDF (168 kB)]
•
Localizations in coupled electronic chains
Hiroyuki Mori
pp.
12699-12703
[ View
PDF (129 kB)]
•
All-electron pseudopotentials
Jiří Vackář, Marek Hyt'ha, and Antonín Šimůnek
pp.
12712-12720
[ View
PDF (139 kB)]
•
Magnetic correlations and quantum criticality in the insulating antiferromagnetic, insulating spin liquid, renormalized Fermi liquid, and metallic antiferromagnetic phases of the Mott system V2O3
Wei Bao, C. Broholm, G. Aeppli, S. A. Carter, P. Dai, T. F. Rosenbaum, J. M. Honig, P. Metcalf, and S. F. Trevino
pp.
12727-12748
[ View
PDF (908 kB)]
•
Microscopic conditions favoring itinerant ferromagnetism
J. Wahle, N. Blümer, J. Schlipf, K. Held, and D. Vollhardt
pp.
12749-12757
[ View
PDF (205 kB)]
•
Faraday effect in composites
Marc Barthélémy and David J. Bergman
pp.
12770-12781
[ View
PDF (227 kB)]
•
Optical study of the Mott transition in V2O3: Comparison of time- and frequency-domain results
O. V. Misochko, M. Tani, K. Sakai, K. Kisoda, S. Nakashima, V. N. Andreev, and F. A. Chudnovsky
pp.
12789-12794
[ View
PDF (94 kB)]
•
Photoemission experiments on YbInCu4: Surface effects and temperature dependence
F. Reinert, R. Claessen, G. Nicolay, D. Ehm, S. Hüfner, W. P. Ellis, G.-H. Gweon, J. W. Allen, B. Kindler, and W. Assmus
pp.
12808-12816
[ View
PDF (187 kB)]
•
Core-level photoemission and x-ray absorption study of Na-covered and oxygen-deficient Ba0.6K0.4BiO3-y single crystals
H. Nylén, A. Beutler, A. A. Zakharov, M. Leandersson, M. Qvarford, I. Lindau, M. B. Tsetlin, L. L. Lev, M. N. Mikheeva, S. N. Barilo, and S. V. Shiryaev
pp.
12836-12841
[ View
PDF (107 kB)]
•
Transport properties of the hierarchical model for stretched polymers
Chen-Ping Zhu, Shi-Jie Xiong, and Tao Chen
pp.
12848-12852
[ View
PDF (137 kB)]
Semiconductors I: bulk
•
Nanoclustering of hydrogen in ion-implanted and plasma-grown amorphous silicon
S. Acco, D. L. Williamson, W. G. J. H. M. van Sark, W. C. Sinke, W. F. van der Weg, A. Polman, and S. Roorda
pp.
12853-12864
[ View
PDF (194 kB)]
•
Spin-glass ordering in the diluted magnetic semiconductor Zn1-xMnxTe
P. M. Shand, A. D. Christianson, T. M. Pekarek, L. S. Martinson, J. W. Schweitzer, I. Miotkowski, and B. C. Crooker
pp.
12876-12882
[ View
PDF (144 kB)]
•
Phonon dispersion and Raman scattering in hexagonal GaN and AlN
V. Yu. Davydov, Yu. E. Kitaev, I. N. Goncharuk, A. N. Smirnov, J. Graul, O. Semchinova, D. Uffmann, M. B. Smirnov, A. P. Mirgorodsky, and R. A. Evarestov
pp.
12899-12907
[ View
PDF (182 kB)]
•
Auger recombination dynamics of lead salts under picosecond free-electron-laser excitation
P. C. Findlay, C. R. Pidgeon, R. Kotitschke, A. Hollingworth, B. N. Murdin, C. J. G. M. Langerak, A. F. G. van der Meer, C. M. Ciesla, J. Oswald, A. Homer, G. Springholz, and G. Bauer
pp.
12908-12915
[ View
PDF (155 kB)]
•
Theory of exciton-exciton correlation in nonlinear optical response
Th. Östreich, K. Schönhammer, and L. J. Sham
pp.
12920-12936
[ View
PDF (347 kB)]
•
Kinetic study of oxygen dimer and thermal donor formation in silicon
D. Åberg, B. G. Svensson, T. Hallberg, and J. L. Lindström
pp.
12944-12951
[ View
PDF (165 kB)]
•
Electrical properties of single crystals of rigid rodlike conjugated molecules
J. H. Schön, Ch. Kloc, R. A. Laudise, and B. Batlogg
pp.
12952-12957
[ View
PDF (114 kB)]
Semiconductors II: surfaces, interfaces, microstructures, and related topics
•
Scattering theory of photon-assisted electron transport
Morten Holm Pedersen and Markus Büttiker
pp.
12993-13006
[ View
PDF (261 kB)]
•
Critical collapse of the exchange-enhanced spin splitting in two-dimensional systems
D. R. Leadley, R. J. Nicholas, J. J. Harris, and C. T. Foxon
pp.
13036-13046
[ View
PDF (262 kB)]
•
Temperature dependence of Auger recombination in a multilayer narrow-band-gap superlattice
D.-J. Jang, Michael E. Flatté, C. H. Grein, J. T. Olesberg, T. C. Hasenberg, and Thomas F. Boggess
pp.
13047-13054
[ View
PDF (170 kB)]
•
Optical absorption spectra of lead iodide nanoclusters
Kanad Mallik and T. S. Dhami
pp.
13055-13059
[ View
PDF (113 kB)]
•
Acoustoelectric effect in nanostructures: Role of quasimomentum balance
V. L. Gurevich, V. I. Kozub, and V. B. Pevzner
pp.
13088-13093
[ View
PDF (131 kB)]
•
Statistical analysis of magnetic-field spectra
Jian Wang and Hong Guo
pp.
13094-13098
[ View
PDF (124 kB)]
•
Direct experimental observation of the Hall angle in the low-temperature breakdown regime of n-GaAs
V. Novák, J. Hirschinger, F.-J. Niedernostheide, W. Prettl, M. Cukr, and J. Oswald
pp.
13099-13102
[ View
PDF (215 kB)]
•
Effective-mass wave-matching theory for a two-band Wannier system
Patrick Roblin, Paul Sotirelis, and J. Gene Cao
pp.
13103-13114
[ View
PDF (242 kB)]
•
Nucleation and growth of self-assembled Ge/Si(001) quantum dots
Vinh Le Thanh, P. Boucaud, D. Débarre, Y. Zheng, D. Bouchier, and J.-M. Lourtioz
pp.
13115-13120
[ View
PDF (435 kB)]
Surface physics, low-dimensional systems, and related topics
•
Convergence and reliability of the Rehr-Albers formalism in multiple-scattering calculations of photoelectron diffraction
Y. Chen, F. J. García de Abajo, A. Chassé, R. X. Ynzunza, A. P. Kaduwela, M. A. Van Hove, and C. S. Fadley
pp.
13121-13131
[ View
PDF (215 kB)]
•
Quantitative assessment of STM images of Fe grown epitaxially on MgO(001) using fractal techniques
S. M. Jordan, R. Schad, D. J. L. Herrmann, J.F. Lawler, and H. van Kempen
pp.
13132-13137
[ View
PDF (274 kB)]
•
Structural and transport properties of aluminum atomic wires
Gianni Taraschi, José-Luis Mozos, C. C. Wan, Hong Guo, and Jian Wang
pp.
13138-13145
[ View
PDF (1,052 kB)]
•
Sublimation of a heavily boron-doped Si(111) surface
Yoshikazu Homma, Hiroki Hibino, Toshio Ogino, and Noriyuki Aizawa
pp.
13146-13150
[ View
PDF (486 kB)]
•
Interacting hard-core bosons and surface preroughening
Alessandro Laio, Giuseppe Santoro, and Erio Tosatti
pp.
13151-13162
[ View
PDF (277 kB)]
•
Experimental band gap and core-hole electron interaction in epitaxial C60 films
R. Schwedhelm, L. Kipp, A. Dallmeyer, and M. Skibowski
pp.
13176-13180
[ View
PDF (109 kB)]
•
Phonon-drag thermopower and weak localization
A. Miele, R. Fletcher, E. Zaremba, Y. Feng, C. T. Foxon, and J. J. Harris
pp.
13181-13190
[ View
PDF (210 kB)]
•
Calculated bond properties of K adsorbed on graphite
O. Hjortstam, J. M. Wills, B. Johansson, and O. Eriksson
pp.
13191-13196
[ View
PDF (106 kB)]
•
Surface compounds of divalent rare-earth metals with palladium
S. Wieling, S. L. Molodtsov, Th. Gantz, J. J. Hinarejos, C. Laubschat, and M. Richter
pp.
13219-13223
[ View
PDF (228 kB)]
•
Oxygen-induced reconstructions on Cu(211)
G. Witte, J. Braun, D. Nowack, L. Bartels, B. Neu, and G. Meyer
pp.
13224-13232
[ View
PDF (3,331 kB)]
•
Transport equation and diffusion in ultrathin channels and films
A. E. Meyerovich and A. Stepaniants
pp.
13242-13263
[ View
PDF (412 kB)]
ERRATA
•
Erratum: Neutral-donor–bound-exciton complexes in ZnO crystals [Phys. Rev. B 57, 12 151 (1998)]
D. C. Reynolds, D. C. Look, B. Jogai, C. W. Litton, T. C. Collins, W. Harsch, and G. Cantwell
pp.
13276
[ View
PDF (28 kB)]
•
Erratum: Bond-length variation in InxGa1-xAs/InP strained epitaxial layers [Phys. Rev. B 57, 14 619 (1998)]
F. Romanato, D. De Salvador, M. Berti, A. Drigo, M. Natali, M. Tormen, G. Rossetto, S. Pascarelli, F. Boscherini, C. Lamberti, and S. Mobilio
pp.
13277
[ View
PDF (27 kB)]
|
|