Physical Review B
– 15 November 1998
Volume 58, Issue 20
RAPID COMMUNICATIONS
Electronic structure: wide-band, narrow-band, and strongly correlated systems
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Spin-dependent pseudopotentials
S. C. Watson and E. A. Carter
pp.
R13309-R13313
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Observation of quantum oscillations in the electrical resistivity of SrRuO3
A. P. Mackenzie, J. W. Reiner, A. W. Tyler, L. M. Galvin, S. R. Julian, M. R. Beasley, T. H. Geballe, and A. Kapitulnik
pp.
R13318-R13321
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ARPES results on Sr2RuO4: Fermi surface revisited
A. V. Puchkov, Z.-X. Shen, T. Kimura, and Y. Tokura
pp.
R13322-R13325
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Optical spectroscopy of charge-ordering transition in La1/3Sr2/3FeO3
T. Ishikawa, S. K. Park, T. Katsufuji, T. Arima, and Y. Tokura
pp.
R13326-R13329
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Metal-insulator transition due to charge ordering in R1/2Ba1/2CoO3
Y. Moritomo, M. Takeo, X. J. Liu, T. Akimoto, and A. Nakamura
pp.
R13334-R13337
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Observation of the metal-insulator transition in two-dimensional n-type GaAs
Y. Hanein, D. Shahar, J. Yoon, C. C. Li, D. C. Tsui, and Hadas Shtrikman
pp.
R13338-R13340
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Metallic state in (TMTSF)2PF6 at low pressure
I. J. Lee and M. J. Naughton
pp.
R13343-R13346
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Spin-split de Haas–van Alphen effect in two-dimensional electron systems
M. A. Itskovsky, S. Askenazy, T. Maniv, I. D. Vagner, E. Balthes, and D. Schweitzer
pp.
R13347-R13350
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Semiconductors I: bulk
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Similarity between the 0.88-eV photoluminescence in GaN and the electron-capture emission of the OP donor in GaP
W. M. Chen, I. A. Buyanova, Mt. Wagner, B. Monemar, J. L. Lindström, H. Amano, and I. Akasaki
pp.
R13351-R13354
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Semiconductors II: surfaces, interfaces, microstructures, and related topics
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Effect of injection of Si self-interstitials on Sb diffusion in Si/Si1-xGex/Si heterostructures
A. Yu. Kuznetsov, J. Grahn, J. Cardenas, B. G. Svensson, J. Lundsgaard Hansen, and A. Nylandsted Larsen
pp.
R13355-R13358
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Spectroscopic examination of the Na/Si(111)-(3×1) surface structure
Myung-Ho Kang, Jin-Ho Kang, and Sukmin Jeong
pp.
R13359-R13362
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Role of hydrogen in SiH2 adsorption on Si(100)
Suklyun Hong and M. Y. Chou
pp.
R13363-R13366
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Quantum confined Stark effect due to built-in internal polarization fields in (Al,Ga)N/GaN quantum wells
M. Leroux, N. Grandjean, M. Laügt, J. Massies, B. Gil, P. Lefebvre, and P. Bigenwald
pp.
R13371-R13374
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Theory of current-induced breakdown of the quantum Hall effect
Kenzo Ishikawa, Nobuki Maeda, Tetsuyuki Ochiai, and Hisao Suzuki
pp.
R13391-R13394
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Exciton formation and relaxation in GaAs epilayers
M. Gurioli, P. Borri, M. Colocci, M. Gulia, F. Rossi, E. Molinari, P. E. Selbmann, and P. Lugli
pp.
R13403-R13406
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Impact of exciton diffusion on the optical properties of thin GaN layers
O. Brandt, B. Yang, H.-J. Wünsche, U. Jahn, J. Ringling, G. Paris, H. T. Grahn, and K. H. Ploog
pp.
R13407-R13410
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Electrical characteristics and efficiency of single-layer organic light-emitting diodes
G. G. Malliaras, J. R. Salem, P. J. Brock, and C. Scott
pp.
R13411-R13414
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Asymmetric Stark shift in AlxIn1-xAs/AlyGa1-yAs self-assembled dots
S. Raymond, J. P. Reynolds, J. L. Merz, S. Fafard, Y. Feng, and S. Charbonneau
pp.
R13415-R13418
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Surface physics, low-dimensional systems, and related topics
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X-ray reflectivity study of temperature-dependent surface layering in liquid Hg
E. DiMasi, H. Tostmann, B. M. Ocko, P. S. Pershan, and M. Deutsch
pp.
R13419-R13422
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Direct measurement of field effects on surface diffusion
Joseph M. Carpinelli and B. S. Swartzentruber
pp.
R13423-R13425
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Heat capacity and vibrational spectra of monolayer films adsorbed in nanotubes
Ana Maria Vidales, Vincent H. Crespi, and Milton W. Cole
pp.
R13426-R13429
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Estimate of the effective conjugation length of polythiophene from its |χ(3)(ω;ω,ω,-ω)| spectrum at excitonic resonance
S. Kishino, Y. Ueno, K. Ochiai, M. Rikukawa, K. Sanui, T. Kobayashi, H. Kunugita, and K. Ema
pp.
R13430-R13433
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Heterogeneous nucleation of oxygen on silicon: Hydroxyl-mediated interdimer coupling on Si(100)-(2×1)
Alejandra B. Gurevich, Boris B. Stefanov, Marcus K. Weldon, Yves J. Chabal, and Krishnan Raghavachari
pp.
R13434-R13437
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ARTICLES
Electronic structure: wide-band, narrow-band, and strongly correlated systems
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Scaling lengths of elemental metals
M. M. Sigalas, James H. Rose, D. A. Papaconstantopoulos, and Herbert B. Shore
pp.
13438-13441
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1s2p resonant inelastic x-ray scattering in α-Fe2O3
W. A. Caliebe, C.-C. Kao, J. B. Hastings, M. Taguchi, A. Kotani, T. Uozumi, and F. M. F. de Groot
pp.
13452-13458
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Orbital-free kinetic-energy functionals for the nearly free electron gas
Yan Alexander Wang, Niranjan Govind, and Emily A. Carter
pp.
13465-13471
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Exact eigenstates of tight-binding Hamiltonians on the Penrose tiling
Przemysław Repetowicz, Uwe Grimm, and Michael Schreiber
pp.
13482-13490
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Electronic structure of pyrite-type MnTe2 studied by photoelectron spectroscopy
K. V. Kaznacheyev, T. Muro, T. Matsushita, T. Iwasaki, Y. Kuwata, H. Harada, S. Suga, H. Ishii, T. Miyahara, T. Mizokawa, A. Fujimori, T. Harada, and T. Kanomata
pp.
13491-13497
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Band gap stability in CeRhSb
A. Ślebarski, A. Jezierski, A. Zygmunt, S. Mähl, and M. Neumann
pp.
13498-13505
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Theory of excitons in the insulating Cu-O2 plane
F. C. Zhang and K. K. Ng
pp.
13520-13525
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Density of states in the non-Hermitian Lloyd model
Christopher Mudry, P. W. Brouwer, B. I. Halperin, V. Gurarie, and A. Zee
pp.
13539-13543
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Polarized reflectance measurements of the CDW transitions in η-Mo4O11 and γ-Mo4O11
A. W. McConnell, B. P. Clayman, C. C. Homes, M. Inoue, and H. Negishi
pp.
13565-13573
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Photoluminescence lifetime of nanocrystalline ZnS:Mn2+
Kuo Yan, Changkui Duan, Yi Ma, Shangda Xia, and Jean-Claude Krupa
pp.
13585-13589
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Electronic and crystal structure of NiTi martensite
Mahdi Sanati, R. C. Albers, and F. J. Pinski
pp.
13590-13593
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Semiconductors I: bulk
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Raman scattering from defects in GaN: The question of vibrational or electronic scattering mechanism
H. Siegle, A. Kaschner, A. Hoffmann, I. Broser, C. Thomsen, S. Einfeldt, and D. Hommel
pp.
13619-13626
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Response of GaAs to fast intense laser pulses
J. S. Graves and R. E. Allen
pp.
13627-13633
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Phonon replicas at the M point in 4H-SiC: A theoretical and experimental study
I. G. Ivanov, U. Lindefelt, A. Henry, O. Kordina, C. Hallin, M. Aroyo, T. Egilsson, and E. Janzén
pp.
13634-13647
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Positron-lifetime study of compensation defects in undoped semi-insulating InP
C. D. Beling, A. H. Deng, Y. Y. Shan, Y. W. Zhao, S. Fung, N. F. Sun, T. N. Sun, and X. D. Chen
pp.
13648-13653
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Pressure dependence of shallow acceptors in CuGa(SxSe1-x)2 alloys
J. Gonzalez, E. Calderon, F. Capet, and F. Baert
pp.
13654-13659
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Semiconductors II: surfaces, interfaces, microstructures, and related topics
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Atomic-scale structure of SiO2/Si interface formed by furnace oxidation
Noriyuki Miyata, Heiji Watanabe, and Masakazu Ichikawa
pp.
13670-13676
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Atomic and electronic structure of ideal and reconstructed α-Sn (100) surfaces
Zhong-Yi Lu, Guido L. Chiarotti, S. Scandolo, and E. Tosatti
pp.
13698-13711
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Si-rich SiC(111)/(0001)3×3 and √3×√3 surfaces: A Mott-Hubbard picture
J. Furthmüller, F. Bechstedt, H. Hüsken, B. Schröter, and W. Richter
pp.
13712-13716
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Interface reflectivities and quantum-well states in magnetic multilayers
K. Wildberger, R. Zeller, P. H. Dederichs, J. Kudrnovský, and P. Weinberger
pp.
13721-13733
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Spin oscillation and its reduction in a quantum dot
Jia-Lin Zhu, Ziqiang Zhu, Yoshiyuki Kawazoe, and Takafumi Yao
pp.
13755-13761
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Si and Be intralayers at GaAs/AlAs heterojunctions: Doping effects
M. Moreno, J. L. Sacedón, M. Alonso, M. Höricke, R. Hey, J. Avila, M. C. Asensio, K. Horn, and K. H. Ploog
pp.
13767-13777
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Observability of counterpropagating modes at fractional quantum Hall edges
U. Zülicke, A. H. MacDonald, and M. D. Johnson
pp.
13778-13792
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Two-dimensional electron gas and persistent photoconductivity in AlxGa1-xN/GaN heterostructures
T. Y. Lin, H. M. Chen, M. S. Tsai, Y. F. Chen, F. F. Fang, C. F. Lin, and G. C. Chi
pp.
13793-13798
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Structure of the Cl-passivated GaAs(111) surface
Z. H. Lu, T. Tyliszczak, and A. P. Hitchcock
pp.
13820-13823
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Surface physics, low-dimensional systems, and related topics
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Deformation of carbon nanotubes by surface van der Waals forces
Tobias Hertel, Robert E. Walkup, and Phaedon Avouris
pp.
13870-13873
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Superstructure formation of large organic adsorbates on a metal surface: A systematic approach using oligothiophenes on Ag(111)
A. Soukopp, K. Glöckler, P. Kraft, S. Schmitt, M. Sokolowski, E. Umbach, E. Mena-Osteritz, P. Bäuerle, and E. Hädicke
pp.
13882-13894
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Anisotropy in growth-front roughening
Y.-P. Zhao, G.-C. Wang, and T.-M. Lu
pp.
13909-13917
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First-principles study of the ortho-KC60 polymer
T. Ogitsu, T. M. Briere, K. Kusakabe, S. Tsuneyuki, and Y. Tateyama
pp.
13925-13930
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Charge-density oscillations on Be(101¯0): Screening in a non-free two-dimensional electron gas
B. G. Briner, Ph. Hofmann, M. Doering, H.-P. Rust, E. W. Plummer, and A. M. Bradshaw
pp.
13931-13943
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Bonding state of the C60 molecule adsorbed on a Si(111)-(7×7) surface
Kazuyuki Sakamoto, Masashi Harada, Daiyu Kondo, Akio Kimura, Akito Kakizaki, and Shozo Suto
pp.
13951-13956
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Scattering-theory approach to ammonia photodesorption from Cu(111)
Massimo Torri, Zbigniew W. Gortel, and Robert Teshima
pp.
13982-13990
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Theory of Auger neutralization and deexcitation of slow ions at metal surfaces
M. A. Cazalilla, N. Lorente, R. Díez Muiño, J.-P. Gauyacq, D. Teillet-Billy, and P. M. Echenique
pp.
13991-14006
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Photoemission from bulk bands along the surface normal of W(110)
J. Feydt, A. Elbe, H. Engelhard, G. Meister, Ch. Jung, and A. Goldmann
pp.
14007-14012
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Young’s modulus of single-walled nanotubes
A. Krishnan, E. Dujardin, T. W. Ebbesen, P. N. Yianilos, and M. M. J. Treacy
pp.
14013-14019
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Electron energy-loss spectrum of nanowires
G. F. Bertsch, H. Esbensen, and B. W. Reed
pp.
14031-14035
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Metastable phase of vanadium
Y. Tian, F. Jona, and P. M. Marcus
pp.
14051-14055
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