Physical Review B
– 15 July 1998
Volume 58, Issue 4
RAPID COMMUNICATIONS
Electronic structure: wide-band, narrow-band, and strongly correlated systems
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Thermally induced insulator-metal transition in LaCoO3: A view based on the Mott transition
Y. Tokura, Y. Okimoto, S. Yamaguchi, H. Taniguchi, T. Kimura, and H. Takagi
pp.
R1699-R1702
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One-dimensional XXZ model for particles obeying fractional statistics
Luigi Amico, Andreas Osterloh, and Ulrich Eckern
pp.
R1703-R1706
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PDF (125 kB)]
Semiconductors I: bulk
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Trends in band-gap pressure coefficients in chalcopyrite semiconductors
Su-Huai Wei, Alex Zunger, In-Hwan Choi, and Peter Y. Yu
pp.
R1710-R1713
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Semiconductors II: surfaces, interfaces, microstructures, and related topics
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Bond-rotation versus bond-contraction relaxation of (110) surfaces of group-III nitrides
Ulrike Grossner, Jürgen Furthmüller, and Friedhelm Bechstedt
pp.
R1722-R1725
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Correlated charge polarization in a chain of coupled quantum dots
R. Kotlyar, C. A. Stafford, and S. Das Sarma
pp.
R1746-R1749
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PDF (98 kB)]
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Biexcitons in semiconductor quantum wires
T. Baars, W. Braun, M. Bayer, and A. Forchel
pp.
R1750-R1753
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Magnetic-field-induced bistability in resonant tunneling
S. A. Brown and L. D. Macks
pp.
R1758-R1761
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PDF (59 kB)]
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Optically detected magnetic resonance of excess electrons in type-I quantum wells with a low-density electron gas
C. Y. Hu, W. Ossau, D. R. Yakovlev, G. Landwehr, T. Wojtowicz, G. Karczewski, and J. Kossut
pp.
R1766-R1769
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Raman study of interface modes subjected to strain in InAs/GaAs self-assembled quantum dots
Yu. A. Pusep, G. Zanelatto, S. W. da Silva, J. C. Galzerani, P. P. Gonzalez-Borrero, A. I. Toropov, and P. Basmaji
pp.
R1770-R1773
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Surface physics, low-dimensional systems, and related topics
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Ionic structure and photoabsorption in medium-sized sodium clusters
S. Kümmel, M. Brack, and P.-G. Reinhard
pp.
R1774-R1777
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Adsorption of thiophene on RuS2: An ab initio density-functional study
V. Smelyansky, J. Hafner, and G. Kresse
pp.
R1782-R1785
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ARTICLES
Electronic structure: wide-band, narrow-band, and strongly correlated systems
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Exact SO(8) symmetry in the weakly-interacting two-leg ladder
Hsiu-Hau Lin, Leon Balents, and Matthew P. A. Fisher
pp.
1794-1825
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Scattering theory of oscillator defects in an optical fiber
Robert Konik and André LeClair
pp.
1872-1886
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PDF (365 kB)]
Semiconductors I: bulk
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Electronic structure of tin monochalcogenides from SnO to SnTe
I. Lefebvre, M. A. Szymanski, J. Olivier-Fourcade, and J. C. Jumas
pp.
1896-1906
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PDF (1,102 kB)]
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Band-tail parameter modeling in semiconductor materials
A. Iribarren, R. Castro-Rodríguez, V. Sosa, and J. L. Peña
pp.
1907-1911
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Magnetization and exciton spectroscopy of the diluted magnetic semiconductor Cd1-xCrxS
M. Herbich, W. Mac, A. Twardowski, K. Ando, Y. Shapira, and M. Demianiuk
pp.
1912-1921
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Ab initio calculation of the reflectance anisotropy of GaAs(110)
Olivia Pulci, Giovanni Onida, Rodolfo Del Sole, and Anatoli J. Shkrebtii
pp.
1922-1927
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Density of states, hybridization, and band-gap evolution in AlxGa1-xN alloys
Laurent -C. Duda, Cristian B. Stagarescu, James Downes, Kevin E. Smith, Dimitris Korakakis, Theodore D. Moustakas, Jinghua Guo, and Joseph Nordgren
pp.
1928-1933
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Semiconductors II: surfaces, interfaces, microstructures, and related topics
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Surface morphologies in GaAs homoepitaxy: Mound formation and evolution
V. R. Coluci, M. A. Cotta, C. A. C. Mendonça, K. M. I.-Landers, and M. M. G. de Carvalho
pp.
1947-1953
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Microphotoluminescence spectroscopy of vertically stacked InxGa1-xAs/GaAs quantum wires
R. Cingolani, F. Sogawa, Y. Arakawa, R. Rinaldi, M. DeVittorio, A. Passaseo, A. Taurino, M. Catalano, and L. Vasanelli
pp.
1962-1966
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Thermopower measurements of the coupling of phonons to electrons and composite fermions
B. Tieke, R. Fletcher, U. Zeitler, M. Henini, and J. C. Maan
pp.
2017-2025
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Magnetoluminescence of self-assembled InP dots of various sizes
B. Kowalski, S. Nomura, C. Pryor, Y. Aoyagi, N. Carlsson, M.-E. Pistol, P. Omling, L. Samuelson, and W. Seifert
pp.
2026-2030
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Nanoscale mapping of confinement potentials in single semiconductor quantum wires by near-field optical spectroscopy
Ch. Lienau, A. Richter, G. Behme, M. Süptitz, D. Heinrich, T. Elsaesser, M. Ramsteiner, R. Nötzel, and K. H. Ploog
pp.
2045-2049
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Influence of Coulomb correlations on gain and stimulated emission in (Zn,Cd)Se/Zn(S,Se)/(Zn,Mg)(S,Se) quantum-well lasers
P. Michler, M. Vehse, J. Gutowski, M. Behringer, D. Hommel, M. F. Pereira, Jr. and, and K. Henneberger
pp.
2055-2063
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Spin-flip and acoustic-phonon Raman scattering in CdS nanocrystals
A. A. Sirenko, V. I. Belitsky, T. Ruf, M. Cardona, A. I. Ekimov, and C. Trallero-Giner
pp.
2077-2087
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Relaxed and effective-mass excited states of a quantum-dot polaron
Soma Mukhopadhyay and Ashok Chatterjee
pp.
2088-2093
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Surface physics, low-dimensional systems, and related topics
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Surface x-ray diffraction on K/Si(001)(2×1) and Cs/Si(001)(2×1)
H. L. Meyerheim, N. Jedrecy, M. Sauvage-Simkin, and R. Pinchaux
pp.
2118-2125
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Nucleation of endohedral metallofullerene Nd@C82 on C60 films
Nian Lin, Houjin Huang, Shihe Yang, and Nelson Cue
pp.
2126-2130
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Theory of probing a photonic crystal with transmission near-field optical microscopy
Garnett W. Bryant, Eric L. Shirley, Lori S. Goldner, Eric B. McDaniel, J. W. P. Hsu, and R. J. Tonucci
pp.
2131-2141
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Kinetics of gallium films confined at grain boundaries
H. Konrad, J. Weissmüller, R. Birringer, C. Karmonik, and H. Gleiter
pp.
2142-2149
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Memory expansion for diffusion coefficients
S. C. Ying, I. Vattulainen, J. Merikoski, T. Hjelt, and T. Ala-Nissila
pp.
2170-2178
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Vibrations of O on stepped Pt(111)
Peter J. Feibelman, J. Hafner, and G. Kresse
pp.
2179-2184
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Spontaneous breaking of nanowires between a STM tip and the Pb(110) surface
Zheng Gai, Xiaowei Li, Bo Gao, R. G. Zhao, W. S. Yang, and J. W. M. Frenken
pp.
2185-2190
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Carbon nitride deposited using energetic species: A review on XPS studies
C. Ronning, H. Feldermann, R. Merk, H. Hofsäss, P. Reinke, and J.-U. Thiele
pp.
2207-2215
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Channel interference in resonant Auger scattering by surface adsorbed molecules
Faris Gel’mukhanov, Vincenzo Carravetta, and Hans Ågren
pp.
2216-2227
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Interface and bulk effects in the attenuation of low-energy electrons through CaF2 thin films
J. E. Ortega, F. J. García de Abajo, P. M. Echenique, I. Manke, T. Kalka, M. Dähne, D. Ochs, S. L. Molodtsov, and A. Rubio
pp.
2233-2239
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Equilibrium step dynamics on vicinal surfaces revisited
T. Ihle, C. Misbah, and O. Pierre-Louis
pp.
2289-2309
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Evanescent light scattering: The validity of the dipole approximation
Patrick C. Chaumet, Adel Rahmani, Frédérique de Fornel, and Jean-Paul Dufour
pp.
2310-2315
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Partial localization of core holes in nonsymmetrical systems
N. V. Dobrodey, L. S. Cederbaum, and F. Tarantelli
pp.
2316-2323
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Growth-mode modification of Bi on CdTe(111)A using Te monolayer deposition
Sunglae Cho, Antonio DiVenere, George K. Wong, John B. Ketterson, Jerry R. Meyer, and Jung-Il Hong
pp.
2324-2328
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Energetics of surface atomic processes near a lattice step
Tsu-Yi Fu, Hao-Tse Wu, and Tien T. Tsong
pp.
2340-2346
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