Physical Review B
– 15 August 1998
Volume 58, Issue 7
BRIEF REPORTS
Electronic structure: wide-band, narrow-band, and strongly correlated systems
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Efficient scaling of calculations involving separable nonlocal potentials
Steven P. Lewis, C. Y. Wei, E. J. Mele, and Andrew M. Rappe
pp.
3482-3485
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Electronic structure of the singly bonded (C60)x fullerene polymer
Péter R. Surján, Armand Lázár, and Mihály Kállay
pp.
3490-3493
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Wigner paths for electrons interacting with phonons
M. Pascoli, P. Bordone, R. Brunetti, and C. Jacoboni
pp.
3503-3506
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Optical conductivity in substoichiometric titanium carbides
J. Izquierdo, A. Vega, S. Bouarab, and M. A. Khan
pp.
3507-3510
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High-resolution photoemission from an ordered Ce/Be alloy
M. Garnier, D. Purdie, K. Breuer, M. Hengsberger, and Y. Baer
pp.
3515-3517
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Semiconductors I: bulk
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Enhanced activation of implanted dopant impurity in hydrogenated crystalline silicon
A. N. Nazarov, V. M. Pinchuk, V. S. Lysenko, T. V. Yanchuk, and S. Ashok
pp.
3522-3525
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Possibility of a double-well potential formation in diamondlike amorphous carbon
A. Rakitin, M. Ya. Valakh, N. I. Klyui, V. G. Visotski, and A. P. Litvinchuk
pp.
3526-3528
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Hot-electron transport and impact ionization process in Hg0.8Cd0.2Te
X. F. Wang, I. C. da Cunha Lima, X. L. Lei, and A. Troper
pp.
3529-3532
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Semiconductors II: surfaces, interfaces, microstructures, and related topics
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Normal-incidence x-ray standing-wave analysis of Si(111)√3×√3-Au structure
Akira Saito, Koichi Izumi, Toshio Takahashi, and Seishi Kikuta
pp.
3541-3544
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Reexamination of the Si(111)3×1-Na reconstruction on the basis of Si atom density and unit cluster determination
A. A. Saranin, A. V. Zotov, V. G. Lifshits, J.-T. Ryu, O. Kubo, H. Tani, T. Harada, M. Katayama, and K. Oura
pp.
3545-3548
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Unusual Ti adsorption on Si(001) and subsequent activation of Si ejection
B. D. Yu, Yoshiyuki Miyamoto, Osamu Sugino, T. Sasaki, and T. Ohno
pp.
3549-3552
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Effect of a tilted magnetic field on the anomalous H=0 conducting phase in high-mobility Si MOSFET’s
S. V. Kravchenko, D. Simonian, M. P. Sarachik, A. D. Kent, and V. M. Pudalov
pp.
3553-3556
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Quantum transport in a corrugated one-dimensional quantum wire
KyoungWan Park, Seongjae Lee, Mincheol Shin, Jong Seol Yuk, El-Hang Lee, and Hyuk Chan Kwon
pp.
3557-3560
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Commensurability oscillations of rectangular antidot arrays: A classical diffusion model
J. Rychen, T. Vančura, T. Heinzel, R. Schuster, and K. Ensslin
pp.
3568-3571
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Electrophonon resonance in cylindrical quantum wires
SeGi Yu, V. B. Pevzner, K. W. Kim, and Michael A. Stroscio
pp.
3580-3583
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RKKY interaction in one- and two-dimensional electron gases
V. I. Litvinov and V. K. Dugaev
pp.
3584-3585
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Electron–LO-phonon quantum kinetics in semiconductor quantum wells
M. U. Wehner, D. S. Chemla, and M. Wegener
pp.
3590-3593
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Photoluminescence of charged InAs self-assembled quantum dots
K. H. Schmidt, G. Medeiros-Ribeiro, and P. M. Petroff
pp.
3597-3600
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Surface physics, low-dimensional systems, and related topics
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Ionization potential of aluminum clusters
J. Akola, H. Häkkinen, and M. Manninen
pp.
3601-3604
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Surface morphological modification of Pt thin films induced by growth temperature
Shiqiang Wei, Boquan Li, Toshiyuki Fujimoto, and Isao Kojima
pp.
3605-3608
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Interface mixing energy: A measure of interface stability
A. M. N. Niklasson, I. A. Abrikosov, and B. Johansson
pp.
3613-3616
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Fourth-layer surface core-level shift on Be(0001)
L. I. Johansson, P.-A. Glans, and T. Balasubramanian
pp.
3621-3624
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ARTICLES
Electronic structure: wide-band, narrow-band, and strongly correlated systems
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Critical behavior of Tomonaga-Luttinger liquids with a mobile impurity
Yasumasa Tsukamoto, Tatsuya Fujii, and Norio Kawakami
pp.
3633-3640
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Surface electronic structure of epitaxial Ce and La films
E. Weschke, A. Höhr, G. Kaindl, S. L. Molodtsov, S. Danzenbächer, M. Richter, and C. Laubschat
pp.
3682-3689
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Metal-insulator transition in NiS2-xSex and the local impurity self-consistent approximation model
A. Y. Matsuura, H. Watanabe, C. Kim, S. Doniach, Z.-X. Shen, T. Thio, and J. W. Bennett
pp.
3690-3696
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Unusual transport and large diamagnetism in the intermetallic semiconductor RuAl2
D. Mandrus, V. Keppens, B. C. Sales, and J. L. Sarrao
pp.
3712-3716
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Charge-gap formation upon the Verwey transition in Fe3O4
S. K. Park, T. Ishikawa, and Y. Tokura
pp.
3717-3720
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Weak microcavity effects in organic light-emitting devices
V. Bulović, V. B. Khalfin, G. Gu, P. E. Burrows, D. Z. Garbuzov, and S. R. Forrest
pp.
3730-3740
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Magnetic dichroism in reflectivity and photoemission using linearly polarized light: 3p core level of Ni(110)
Maurizio Sacchi, Giancarlo Panaccione, Jan Vogel, Alessandro Mirone, and Gerrit van der Laan
pp.
3750-3754
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Electronic structure of CaMnOx with 2.66<~x<~3.00 studied with photoemission and x-ray-absorption spectroscopy
G. Zampieri, F. Prado, A. Caneiro, J. Briático, M. T. Causa, M. Tovar, B. Alascio, M. Abbate, and E. Morikawa
pp.
3755-3761
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Overscreened multichannel SU(N) Kondo model: Large-N solution and conformal field theory
Olivier Parcollet, Antoine Georges, Gabriel Kotliar, and Anirvan Sengupta
pp.
3794-3813
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Semiconductors I: bulk
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Electron paramagnetic resonance study of hydrogen-vacancy defects in crystalline silicon
P. Stallinga, P. Johannesen, S. Herstrøm, K. Bonde Nielsen, B. Bech Nielsen, and J. R. Byberg
pp.
3842-3852
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Acceptor binding energies in GaN and AlN
Francisco Mireles and Sergio E. Ulloa
pp.
3879-3887
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Indirect nuclear spin-spin interactions in PbTe
R. C. Patnaik, R. L. Hota, and G. S. Tripathi
pp.
3924-3931
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Semiconductors II: surfaces, interfaces, microstructures, and related topics
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Nucleation on antiphase boundaries on Si(001)
D. R. Bowler and C. M. Goringe
pp.
3937-3940
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Strange attractor in resonant tunneling
Kirill N. Alekseev, Gennady P. Berman, and David K. Campbell
pp.
3954-3962
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Anisotropic Zeeman splitting in semimagnetic quantum-well structures
D. Suisky, W. Heimbrodt, C. Santos, F. Neugebauer, M. Happ, B. Lunn, J. E. Nicholls, and D. E. Ashenford
pp.
3969-3976
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Effect of deconfinement on resonant transport in quantum wires
A. Ramšak, T. Rejec, and J. H. Jefferson
pp.
4014-4018
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Tunneling between edge states in the quantum Hall regime limited by a mesoscopic island: A current-plateau phenomenon
Z. H. Liu, G. Nachtwei, J. Groß, R. R. Gerhardts, J. Weis, K. von Klitzing, and K. Eberl
pp.
4028-4034
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Current oscillation in superlattices with different miniband widths
E. Schomburg, T. Blomeier, K. Hofbeck, J. Grenzer, S. Brandl, I. Lingott, A. A. Ignatov, K. F. Renk, D. G. Pavel’ev, Yu. Koschurinov, B. Ya. Melzer, V. M. Ustinov, S. V. Ivanov, A. Zhukov, and P. S. Kop’ev
pp.
4035-4038
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Auger recombination in semiconductor quantum wells
Anatoli S. Polkovnikov and Georgy G. Zegrya
pp.
4039-4056
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Origin of the blue and red photoluminescence from aged porous silicon
Peng Li, Guanzhong Wang, Yurong Ma, and Rongchuan Fang
pp.
4057-4065
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Synchrotron-radiation photoemission study of Ba on a Si(001)2×1 surface
Chiu-Ping Cheng, Ie-Hong Hong, and Tun-Wen Pi
pp.
4066-4071
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Fractional-dimensional approach for excitons in GaAs-Ga1-xAlxAs quantum wells
A. Matos-Abiague, L. E. Oliveira, and M. de Dios-Leyva
pp.
4072-4076
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Donor bound or negatively charged excitons in thin CdTe/Cd1-xMnxTe quantum wells
N. Paganotto, J. Siviniant, D. Coquillat, D. Scalbert, J-P. Lascaray, and A. V. Kavokin
pp.
4082-4088
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Surface physics, low-dimensional systems, and related topics
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Extending holographic LEED to ordered small-unit-cell superstructures
K. Reuter, J. A. Vamvakas, D. K. Saldin, V. Blum, M. Ott, H. Wedler, R. Döll, and K. Heinz
pp.
4102-4110
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N2 monolayer and bilayer adsorbed on Ag(110) at 15 K: Structure and orientational ordering
C. Ramseyer, C. Girardet, F. Bartolucci, G. Schmitz, R. Franchy, D. Teillet-Billy, and J. P. Gauyacq
pp.
4111-4119
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Structural evolution and thermal stability of deuterated titanium thin films
R. Checchetto, L. M. Gratton, A. Miotello, A. Tomasi, and P. Scardi
pp.
4130-4137
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Effect of the classical electron Coulomb crystal on interedge magnetoplasmons
A. M. C. Valkering, P. K. H. Sommerfeld, and R. W. van der Heijden
pp.
4138-4142
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Synchrotron-radiation photoemission study of Ba on W(110)
Tun-Wen Pi, Ie-Hong Hong, and Chiu-Ping Cheng
pp.
4149-4155
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