Physical Review B
– 15 August 1998
Volume 58, Issue 8
RAPID COMMUNICATIONS
Electronic structure: wide-band, narrow-band, and strongly correlated systems
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Transport properties of alkali-metal-doped single-wall carbon nanotubes
L. Grigorian, G. U. Sumanasekera, A. L. Loper, S. Fang, J. L. Allen, and P. C. Eklund
pp.
R4195-R4198
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Semiconductors I: bulk
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Kinetics of electron charging and discharging on embedded W disks in GaAs
L.-E. Wernersson, A. Litwin, L. Montelius, H. Pettersson, L. Samuelson, and W. Seifert
pp.
R4207-R4210
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PDF (84 kB)]
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Core-level photoemission study of Ga1-xMnxAs
J. Okabayashi, A. Kimura, O. Rader, T. Mizokawa, A. Fujimori, T. Hayashi, and M. Tanaka
pp.
R4211-R4214
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Semiconductors II: surfaces, interfaces, microstructures, and related topics
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Diffraction anomalous fine-structure study of strained Ga1-xInxAs on GaAs(001)
J. C. Woicik, J. O. Cross, C. E. Bouldin, B. Ravel, J. G. Pellegrino, B. Steiner, S. G. Bompadre, L. B. Sorensen, K. E. Miyano, and J. P. Kirkland
pp.
R4215-R4218
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Thickness-dependent electron accumulation in InAs thin films on GaAs(111)A: A scanning-tunneling-spectroscopy study
H. Yamaguchi, J. L. Sudijono, B. A. Joyce, T. S. Jones, C. Gatzke, and R. A. Stradling
pp.
R4219-R4222
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Atomic structure of the Ge(313) surface
Zheng Gai, R. G. Zhao, and W. S. Yang
pp.
R4223-R4226
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PDF (546 kB)]
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Excitonic recombination processes in spin-polarized two-dimensional electron gases
J. L. Osborne, A. J. Shields, M. Y. Simmons, N. R. Cooper, D. A. Ritchie, and M. Pepper
pp.
R4227-R4230
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Gap-state formation in two-dimensional ordered Bi layers on InAs(110)
Maria Grazia Betti, Valdis Corradini, Umberto del Pennino, Valentina De Renzi, Paolo Fantini, and Carlo Mariani
pp.
R4231-R4234
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Transmission-electron microscopy study of the shape of buried InxGa1-xAs/GaAs quantum dots
X. Z. Liao, J. Zou, X. F. Duan, D. J. H. Cockayne, R. Leon, and C. Lobo
pp.
R4235-R4237
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Voltage-controlled sharp-line electroluminescence in GaAs-AlAs double-barrier resonant-tunneling structures
G. A. Roberts, J. J. Finley, M. S. Skolnick, L. Eaves, J. W. Cockburn, I. A. Larkin, M. Henini, and G. Hill
pp.
R4242-R4245
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Energy levels in self-assembled InAs/GaAs quantum dots above the pressure-induced Γ-X crossover
I. E. Itskevich, S. G. Lyapin, I. A. Troyan, P. C. Klipstein, L. Eaves, P. C. Main, and M. Henini
pp.
R4250-R4253
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Photoluminescence up-conversion in GaAs/AlxGa1-xAs heterostructures
Hyeonsik M. Cheong, Brian Fluegel, Mark C. Hanna, and Angelo Mascarenhas
pp.
R4254-R4257
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Extraction of density profile for near perfect multilayers
M. K. Sanyal, S. Hazra, J. K. Basu, and A. Datta
pp.
R4258-R4261
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Tunable intersublevel transitions in self-forming semiconductor quantum dots
R. Leon, S. Fafard, P. G. Piva, S. Ruvimov, and Z. Liliental-Weber
pp.
R4262-R4265
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Surface physics, low-dimensional systems, and related topics
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Atomic resolution STM imaging of a twisted single-wall carbon nanotube
W. Clauss, D. J. Bergeron, and A. T. Johnson
pp.
R4266-R4269
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Observation of the reversible H-induced structural transition in thin Y films via x-ray photoelectron diffraction
J. Hayoz, S. Sarbach, Th. Pillo, E. Boschung, D. Naumović, P. Aebi, and L. Schlapbach
pp.
R4270-R4273
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Wetting behavior of H2 on cesium
D. Ross, P. Taborek, and J. E. Rutledge
pp.
R4274-R4276
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X-ray magnetic linear dichroism in absorption at the L edge of metallic Co, Fe, Cr, and V
M. M. Schwickert, G. Y. Guo, M. A. Tomaz, W. L. O’Brien, and G. R. Harp
pp.
R4289-R4292
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ARTICLES
Electronic structure: wide-band, narrow-band, and strongly correlated systems
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Two-center s-f Slater-Koster integrals
A. K. McMahan
pp.
4293-4303
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Quantum Monte Carlo loop algorithm for the t-J model
Beat Ammon, Hans Gerd Evertz, Naoki Kawashima, Matthias Troyer, and Beat Frischmuth
pp.
4304-4319
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Invar behavior of disordered fcc-FexPt1-x alloys
R. Hayn and V. Drchal
pp.
4341-4344
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Influence of the Kondo-hole impurities on the electronic structure of CeNiSn and CeRhSb
A. Ślebarski, A. Jezierski, S. Mähl, M. Neumann, and G. Borstel
pp.
4367-4371
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Bandwidth control in a perovskite-type 3d1-correlated metal Ca1-xSrxVO3. II. Optical spectroscopy
H. Makino, I. H. Inoue, M. J. Rozenberg, I. Hase, Y. Aiura, and S. Onari
pp.
4384-4393
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Further studies of anisotropy in the T1u⊗hg Jahn-Teller system
Q. C. Qiu, J. L. Dunn, C. A. Bates, and Y. M. Liu
pp.
4406-4417
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Valence-band photoemission study of single crystalline CeNiSn
J.-S. Kang, C. G. Olson, Y. Inada, Y. Ōnuki, S. K. Kwon, and B. I. Min
pp.
4426-4431
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Inhomogeneous waves and energy localization in dielectric superlattices
A. A. Bulgakov, S. A. Bulgakov, and M. Nieto-Vesperinas
pp.
4438-4448
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Semiconductors I: bulk
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Oscillations of current filaments in n-GaAs caused by a magnetic field
F.-J. Niedernostheide, J. Hirschinger, W. Prettl, V. Novák, and H. Kostial
pp.
4454-4458
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Defects in a-Si and a-Si:H: A numerical study
Simone Knief, Wolfgang von Niessen, and Thorsten Koslowski
pp.
4459-4472
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Unusual semimetallic behavior of carbonized ion-implanted polymers
G. Du, V. N. Prigodin, A. Burns, J. Joo, C. S. Wang, and A. J. Epstein
pp.
4485-4495
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Spin-flip effects in the magnetoluminescence and magnetoresistance of semimagnetic narrow-gap Hg1-x-yCdxMnyTe
W. Hoerstel, W. Kraak, W. T. Masselink, Yu. I. Mazur, G. G. Tarasov, E. V. Kuzmenko, and J. W. Tomm
pp.
4531-4537
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Empirical bond-order potential for semiconductors
Detlef Conrad and Kurt Scheerschmidt
pp.
4538-4542
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Coherent plasmons in n-doped GaAs
R. Kersting, J. N. Heyman, G. Strasser, and K. Unterrainer
pp.
4553-4559
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Semiconductors II: surfaces, interfaces, microstructures, and related topics
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Faceting and nanoscale faceting of Ge(hhl) surfaces around (113)
Zheng Gai, R. G. Zhao, Xiaowei Li, and W. S. Yang
pp.
4572-4578
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Amorphous-crystal interface in silicon: A tight-binding simulation
N. Bernstein, M. J. Aziz, and E. Kaxiras
pp.
4579-4583
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Electron correlation effects in the Si(111)-7×7 surface
José Ortega, Fernando Flores, and Alfredo Levy Yeyati
pp.
4584-4588
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Surface electronic structure of a step-well-basis superlattice
R. Kucharczyk, M. Stȩślicka, A. Akjouj, B. Djafari-Rouhani, L. Dobrzynski, and E. H. El Boudouti
pp.
4589-4598
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Boundary-condition problem in the Kane model
M. V. Kisin, B. L. Gelmont, and S. Luryi
pp.
4605-4616
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Inhibition of exciton spin relaxation by longitudinal-optical phonon emission
A. Filoramo, R. Ferreira, Ph. Roussignol, R. Planel, and V. Thierry-Mieg
pp.
4617-4623
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Many-body effects in highly acceptor-doped GaAs/AlxGa1-xAs quantum wells
P. O. Holtz, A. C. Ferreira, B. E. Sernelius, A. Buyanov, B. Monemar, O. Mauritz, U. Ekenberg, M. Sundaram, K. Campman, J. L. Merz, and A. C. Gossard
pp.
4624-4628
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Percolation network in a smooth artificial potential
G. M. Gusev, U. Gennser, X. Kleber, D. K. Maude, J. C. Portal, D. I. Lubyshev, P. Basmaji, M. de P. A. Silva, J. C. Rossi, and Yu. V. Nastaushev
pp.
4636-4643
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Effect of impurity scattering in nanoscale Corbino disks
Satofumi Souma and Akira Suzuki
pp.
4649-4655
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Quantized conductance in a contact between metallic oxide crystals
F. Ott, S. Barberan, J. G. Lunney, J. M. D. Coey, P. Berthet, A. M. de Leon-Guevara, and A. Revcolevschi
pp.
4656-4659
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Edge states on a quantum Hall liquid-solid interface
Milica Milovanovic and Efrat Shimshoni
pp.
4694-4700
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Time-dependent heterointerfacial band bending and quasi-two-dimensional excitonic transport in GaAs structures
G. D. Gilliland, M. S. Petrovic, H. P. Hjalmarson, D. J. Wolford, G. A. Northrop, T. F. Kuech, L. M. Smith, and J. A. Bradley
pp.
4728-4732
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Exciton complexes in InxGa1-xAs/GaAs quantum dots
M. Bayer, T. Gutbrod, A. Forchel, V. D. Kulakovskii, A. Gorbunov, M. Michel, R. Steffen, and K. H. Wang
pp.
4740-4753
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Peculiarities of photoluminescence in pseudomorphic modulation-doped Al0.2Ga0.8As/In0.1Ga0.9As/GaAs quantum wells
H. Kissel, U. Müller, C. Walther, W. T. Masselink, Yu. I. Mazur, G. G. Tarasov, and Z. Ya. Zhuchenko
pp.
4754-4760
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Exciton magnetic polarons in (100)- and (120)-oriented semimagnetic digital alloys (Cd,Mn)Te
R. Fiederling, D. R. Yakovlev, W. Ossau, G. Landwehr, I. A. Merkulov, K. V. Kavokin, T. Wojtowicz, M. Kutrowski, K. Grasza, G. Karczewski, and J. Kossut
pp.
4785-4792
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Anharmonicity effects on the extended x-ray-absorption fine structure: The case of cadmium selenide
G. Dalba, P. Fornasini, R. Grisenti, D. Pasqualini, D. Diop, and F. Monti
pp.
4793-4802
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Bound states in photonic crystal waveguides and waveguide bends
Attila Mekis, Shanhui Fan, and J. D. Joannopoulos
pp.
4809-4817
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Ion-assisted nucleation and growth of GaN on sapphire(0001)
R. L. Headrick, S. Kycia, A. R. Woll, J. D. Brock, and M. V. Ramana Murty
pp.
4818-4824
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Elastic relaxation of dry-etched Si/SiGe quantum dots
A. A. Darhuber, T. Grill, J. Stangl, G. Bauer, D. J. Lockwood, J.-P. Noël, P. D. Wang, and C. M. Sotomayor Torres
pp.
4825-4831
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Formation of discontinuous tracks in single-crystalline InP by 250-MeV Xe-ion irradiation
O. Herre, W. Wesch, E. Wendler, P. I. Gaiduk, F. F. Komarov, S. Klaumünzer, and P. Meier
pp.
4832-4837
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Surface and pseudosurface acoustic waves in superlattices
Takashi Aono and Shin-ichiro Tamura
pp.
4838-4845
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Interaction effects in a one-dimensional constriction
K. J. Thomas, J. T. Nicholls, N. J. Appleyard, M. Y. Simmons, M. Pepper, D. R. Mace, W. R. Tribe, and D. A. Ritchie
pp.
4846-4852
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Spin-dependent exciton-exciton interactions in quantum wells
P. Le Jeune, X. Marie, T. Amand, F. Romstad, F. Perez, J. Barrau, and M. Brousseau
pp.
4853-4859
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Optical-phonon confinement and scattering in wurtzite heterostructures
B. C. Lee, K. W. Kim, M. A. Stroscio, and M. Dutta
pp.
4860-4865
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Experimental signature of phase-coherent Andreev reflection
K.-M. H. Lenssen, M. R. Leys, and J. H. Wolter
pp.
4888-4891
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Recombination centers in GaAs/Al0.4Ga0.6As heterostructures investigated by optically and electrically detected magnetic resonance
T. Wimbauer, M. S. Brandt, M. W. Bayerl, N. M. Reinacher, M. Stutzmann, D. M. Hofmann, Y. Mochizuki, and M. Mizuta
pp.
4892-4902
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Surface physics, low-dimensional systems, and related topics
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Analysis of experimental load dependence of two-dimensional atomic-scale friction
Satoru Fujisawa, Kousuke Yokoyama, Yasuhiro Sugawara, and Seizo Morita
pp.
4909-4916
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Origin of the photoemission intensity oscillation of C60
Shinji Hasegawa, Takayuki Miyamae, Kyuya Yakushi, Hiroo Inokuchi, Kazuhiko Seki, and Nobuo Ueno
pp.
4927-4933
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Rough droplet model for spherical metal clusters
Nicolas Pavloff and Charles Schmit
pp.
4942-4951
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Si(100)2×3-Na surface phase: Formation and atomic arrangement
A. A. Saranin, A. V. Zotov, S. V. Ryzhkov, D. A. Tsukanov, V. G. Lifshits, J.-T. Ryu, O. Kubo, H. Tani, T. Harada, M. Katayama, and K. Oura
pp.
4972-4976
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Diffusion of CO on Pt(111) studied by an optical diffraction method
Jianwei Ma, Xudong Xiao, N. J. DiNardo, and M. M. T. Loy
pp.
4977-4983
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Electronic and atomic structure of the 6H-SiC(0001̅ ) surface studied by ARPES, LEED, and XPS
M. Hollering, J. Bernhardt, J. Schardt, A. Ziegler, R. Graupner, B. Mattern, A. P. J. Stampfl, U. Starke, K. Heinz, and L. Ley
pp.
4992-5000
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Exciton dynamics in disordered linear chains of poly(di-n-hexylsilane): Experiment and theory
Makoto Shimizu, Shozo Suto, Takenari Goto, Akira Watanabe, and Minoru Matsuda
pp.
5032-5042
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Valence-band structure of epitaxially grown Fe3O4(111) films
Y. Q. Cai, M. Ritter, W. Weiss, and A. M. Bradshaw
pp.
5043-5051
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Anomalous corrections to the Kelvin equation at complete wetting
Enrico Carlon, Andrzej Drzewiński, and Jos Rogiers
pp.
5070-5077
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Structure and contact angle of liquid 4He droplets on a Cs surface
Francesco Ancilotto, Anna Maria Sartori, and Flavio Toigo
pp.
5085-5092
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Epitaxial films stabilized by long-range forces
Zhigang Suo and Zhenyu Zhang
pp.
5116-5120
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