Physical Review B
– 15 June 1999
Volume 59, Issue 23
BRIEF REPORTS
Electronic structure: wide-band, narrow-band, and strongly correlated systems
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Supersolid in the periodic Anderson model
Mario Cuoco and Canio Noce
pp.
14831-14832
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Electronic structure of 1T-TiS2
Sangeeta Sharma, Tashi Nautiyal, G. S. Singh, S. Auluck, P. Blaha, and Claudia Ambrosch-Draxl
pp.
14833-14836
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β function of the multichannel Kondo model
Kurt Fischer
pp.
14845-14847
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Statistical properties of a localization-delocalization transition in one dimension
M. Steiner, Yang Chen, M. Fabrizio, and Alexander O. Gogolin
pp.
14848-14851
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Semiconductors I: bulk
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Low-temperature spectroscopic study of n-type diamond
M. Nesládek, K. Meykens, K. Haenen, L. M. Stals, T. Teraji, and S. Koizumi
pp.
14852-14855
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Photoinduced changes of ac transport in a-As2Se3 films: Role of defects and band tails
Ashtosh Ganjoo, K. Shimakawa, N. Yoshida, T. Ohno, A. V. Kolobov, and Y. Ikeda
pp.
14856-14859
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Ultrafast dephasing of continuum transitions in bulk semiconductors
S. Arlt, U. Siegner, J. Kunde, F. Morier-Genoud, and U. Keller
pp.
14860-14863
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Semiconductors II: surfaces, interfaces, microstructures, and related topics
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Atomic structure of the Si(113)-(3×1) surface: Charge transfer within tetramers
C. C. Hwang, H. S. Kim, Y. K. Kim, J. S. Kim, C. Y. Park, K. J. Kim, T.-H. Kang, and B. Kim
pp.
14864-14867
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Atomically perfect bismuth lines on Si(001)
K. Miki, D. R. Bowler, J. H. G. Owen, G. A. D. Briggs, and K. Sakamoto
pp.
14868-14871
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Orbital quantization of composite fermions in antidot lattices
F. Nihey, K. Nakamura, T. Takamasu, G. Kido, T. Sakon, and M. Motokawa
pp.
14872-14875
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Electron-electron interactions between orbital pairs in quantum dots
S. Nagaraja, L. R. C. Fonseca, and J. P. Leburton
pp.
14880-14883
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Interlayer coherence in ν=1 and ν=2 bilayer quantum Hall states
A. Sawada, Z. F. Ezawa, H. Ohno, Y. Horikoshi, A. Urayama, Y. Ohno, S. Kishimoto, F. Matsukura, and N. Kumada
pp.
14888-14891
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Confinement effects in bulk samples derived from the Franz-Keldysh effect
H. J. Kolbe, C. Agert, W. Stolz, and G. Weiser
pp.
14896-14898
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Surface physics, low-dimensional systems, and related topics
ARTICLES
Electronic structure: wide-band, narrow-band, and strongly correlated systems
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Spectral function of the two-dimensional large-N t-J model
Marilyn F. Bishop, Zane P. Gibbs, and T. McMullen
pp.
14937-14968
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Collective-mode approximations in the two-dimensional large-N t-J model
Marilyn F. Bishop, Zane P. Gibbs, and T. McMullen
pp.
14969-14979
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Electronic structure of the spin-Peierls system NaV2O5
Hua Wu and Qing-qi Zheng
pp.
15027-15032
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Chemical bonding in titanium-metalloid compounds
Masataka Mizuno, Isao Tanaka, and Hirohiko Adachi
pp.
15033-15047
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Charge order and the metal-insulator transitions in A1/2A1/2′MnO3
Michel van Veenendaal and A. J. Fedro
pp.
15056-15061
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Metal-insulator transition at 50 K in Na2C60
Y. Kubozono, Y. Takabayashi, S. Fujiki, S. Kashino, T. Kambe, Y. Iwasa, and S. Emura
pp.
15062-15069
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Thermodynamics of CeNiSn at low temperatures and in weak magnetic fields
K. A. Kikoin, M. N. Kiselev, A. S. Mishchenko, and A. de Visser
pp.
15070-15084
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3s photoemission spectra of 3d transition-metal adatoms on graphite
P. Krüger, J. C. Parlebas, and A. Kotani
pp.
15093-15099
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Doping dependence of the electronic structure of Ba1-xKxBiO3 studied by x-ray-absorption spectroscopy
K. Kobayashi, T. Mizokawa, A. Ino, J. Matsuno, A. Fujimori, H. Samata, A. Mishiro, Y. Nagata, and F. M. F. de Groot
pp.
15100-15106
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Far-field characteristics of random lasers
H. Cao, Y. G. Zhao, H. C. Ong, and R. P. H. Chang
pp.
15107-15111
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Momentum conservation law in the Car-Parrinello method
Tetsuya Morishita and Shuichi Nosé
pp.
15126-15132
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Linear and nonlinear optical properties of the conjugated polymers PPV and MEH-PPV
S. J. Martin, D. D. C. Bradley, P. A. Lane, H. Mellor, and P. L. Burn
pp.
15133-15142
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Semiconductors I: bulk
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Calculation of quasiparticle energy spectrum of silicon using the correlated Hartree-Fock method
Takamitsu Ishihara, Hiroshi Yamagami, Kazuya Matsuzawa, and Hiroshi Yasuhara
pp.
15184-15189
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Mixed-valence states in narrow-gap IV-VI semiconductors with rare-earth ions
V. K. Dugaev, V. I. Litvinov, and A. Łusakowski
pp.
15190-15196
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Vibrational Raman and infrared studies of ordering in epitaxial ZnSnP2
A. M. Mintairov, N. A. Sadchikov, T. Sauncy, M. Holtz, G. A. Seryogin, S. A. Nikishin, and H. Temkin
pp.
15197-15207
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Semiconductors II: surfaces, interfaces, microstructures, and related topics
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Boron-induced stabilization of the Si(100)-(2×1) surface reconstruction
B. Gong, D. E. Brown, J. H. Kang, S. K. Jo, Y. M. Sun, and J. G. Ekerdt
pp.
15225-15229
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Macroscopic and nanoscale faceting of germanium surfaces
Zheng Gai, W. S. Yang, R. G. Zhao, and T. Sakurai
pp.
15230-15239
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Model for nucleation in GaAs homoepitaxy derived from first principles
P. Kratzer, C. G. Morgan, and M. Scheffler
pp.
15246-15252
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Atomic and electronic structure of the CdTe(001) surface: LDA and GW calculations
S. Gundel, A. Fleszar, W. Faschinger, and W. Hanke
pp.
15261-15269
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Atomic structure of the As-rich InAs(100) β2(2×4) surface
M. Göthelid, Y. Garreau, M. Sauvage-Simkin, R. Pinchaux, A. Cricenti, and G. Le Lay
pp.
15285-15289
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Density-functional calculations of magnetoplasmons in quantum rings
A. Emperador, M. Barranco, E. Lipparini, M. Pi, and Ll. Serra
pp.
15301-15307
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Exciton diffusion and dissociation in conjugated polymer/fullerene blends and heterostructures
A. Haugeneder, M. Neges, C. Kallinger, W. Spirkl, U. Lemmer, J. Feldmann, U. Scherf, E. Harth, A. Gügel, and K. Müllen
pp.
15346-15351
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Conduction mechanism of hydrogenated nanocrystalline silicon films
Y. L. He, G. Y. Hu, M. B. Yu, M. Liu, J. L. Wang, and G. Y. Xu
pp.
15352-15357
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Time-resolved photoluminescence as a probe of internal electric fields in GaN-(GaAl)N quantum wells
Pierre Lefebvre, Jacques Allègre, Bernard Gil, Henry Mathieu, Nicolas Grandjean, Mathieu Leroux, Jean Massies, and Pierre Bigenwald
pp.
15363-15367
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Manipulating the energy levels of semiconductor quantum dots
S. Fafard, Z. R. Wasilewski, C. Ni. Allen, D. Picard, M. Spanner, J. P. McCaffrey, and P. G. Piva
pp.
15368-15373
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Supercell approach to the optical properties of porous silicon
M. Cruz, M. R. Beltrán, C. Wang, J. Tagüeña-Martínez, and Yuri G. Rubo
pp.
15381-15387
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Optical study of Al0.4Ga0.6Sb/GaSb single quantum wells
R. Ferrini, M. Geddo, G. Guizzetti, M. Patrini, S. Franchi, C. Bocchi, E. Kh. Mukhamedzhanov, A. Baraldi, and R. Magnanini
pp.
15395-15401
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Localization-enhanced biexciton binding in semiconductors
W. Langbein and J. M. Hvam
pp.
15405-15408
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Electron-phonon interaction in mixed crystals
Ruisheng Zheng and Mitsuru Matsuura
pp.
15422-15429
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Substrate for atomic chain electronics
Toshishige Yamada, Charles W. Bauschlicher, , Jr. and, and Harry Partridge
pp.
15430-15436
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Surface physics, low-dimensional systems, and related topics
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First-principles study of potassium adsorption on TiO2 surfaces
J. Muscat, N. M. Harrison, and G. Thornton
pp.
15457-15463
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Proton-induced kinetic plasmon excitation in Al and Mg
S. M. Ritzau, R. A. Baragiola, and R. C. Monreal
pp.
15506-15512
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Pyramid growth without deposition noise
D. C. Vernon, M. Siegert, and M. Plischke
pp.
15523-15527
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Electronic states of charge-ordering Nd0.5Sr0.5MnO3 probed by photoemission
A. Sekiyama, S. Suga, M. Fujikawa, S. Imada, T. Iwasaki, K. Matsuda, T. Matsushita, K. V. Kaznacheyev, A. Fujimori, H. Kuwahara, and Y. Tokura
pp.
15528-15532
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Structural and electronic properties of chemisorbed oxygen on Rh(111)
M. V. Ganduglia-Pirovano and M. Scheffler
pp.
15533-15543
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