Physical Review B
– 15 June 1999
Volume 59, Issue 24
RAPID COMMUNICATIONS
Electronic structure: wide-band, narrow-band, and strongly correlated systems
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Photonic band-gap microcavities in three dimensions
Shawn-Yu Lin, J. G. Fleming, M. M. Sigalas, R. Biswas, and K. M. Ho
pp.
R15579-R15582
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Semiconductors II: surfaces, interfaces, microstructures, and related topics
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Electron-spin polarization by resonant tunneling
Erasmo A. de Andrada e Silva and Giuseppe C. La Rocca
pp.
R15583-R15585
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Observation of highly dispersive surface states on GaN(0001)1×1
Y.-C. Chao, C. B. Stagarescu, J. E. Downes, P. Ryan, K. E. Smith, D. Hanser, M. D. Bremser, and R. F. Davis
pp.
R15586-R15589
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Strong coherent gain from semiconductor microcavities in the regime of excitonic saturation
F. Quochi, C. Ciuti, G. Bongiovanni, A. Mura, M. Saba, U. Oesterle, M. A. Dupertuis, J. L. Staehli, and B. Deveaud
pp.
R15594-R15597
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Surface physics, low-dimensional systems, and related topics
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Melting in metallic Sn nanoparticles studied by surface Brillouin scattering and synchrotron-x-ray diffraction
C. E. Bottani, A. Li Bassi, B. K. Tanner, A. Stella, P. Tognini, P. Cheyssac, and R. Kofman
pp.
R15601-R15604
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Ab initio structural predictions for ultrathin aluminum oxide films on metallic substrates
D. R. Jennison, C. Verdozzi, P. A. Schultz, and M. P. Sears
pp.
R15605-R15608
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ARTICLES
Electronic structure: wide-band, narrow-band, and strongly correlated systems
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Correlation holes in a spin-polarized dense electron gas
Vitaly A. Rassolov, John A. Pople, and Mark A. Ratner
pp.
15625-15631
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Optimization of Gutzwiller wave functions in quantum Monte Carlo
Erik Koch, Olle Gunnarsson, and Richard M. Martin
pp.
15632-15640
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Electron spectroscopic evidence of metastable alloy formation of Ag and Au in Co
M. Gester, J. A. D. Matthew, S. M. Thompson, and G. Beamson
pp.
15654-15659
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Electronic structure of rare-earth nickel pnictides: Narrow-gap thermoelectric materials
P. Larson, S. D. Mahanti, Sandrine Sportouch, and M. G. Kanatzidis
pp.
15660-15668
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Magnetic, optical, and magneto-optical properties of MnX (X=As, Sb, or Bi) from full-potential calculations
P. Ravindran, A. Delin, P. James, B. Johansson, J. M. Wills, R. Ahuja, and O. Eriksson
pp.
15680-15693
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Resonant multilead point-contact tunneling
Chetan Nayak, Matthew P. A. Fisher, A. W. W. Ludwig, and H. H. Lin
pp.
15694-15704
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Semiconductors I: bulk
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Self-interstitial–hydrogen complexes in silicon
B. Hourahine, R. Jones, S. Öberg, and P. R. Briddon
pp.
15729-15732
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Phonon sidebands of electronic transitions in Li-doped CdS
Prabhat Verma, J. Kortus, J. Monecke, S. Anand, and K. P. Jain
pp.
15748-15752
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Phonon spectra of substitutional carbon in Si1-xGex alloys
L. V. Kulik, C. Guedj, M. W. Dashiell, J. Kolodzey, and A. Hairie
pp.
15753-15759
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Semiconductors II: surfaces, interfaces, microstructures, and related topics
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(1×2) Bi chain reconstruction on the InAs(110) surface
Maria Grazia Betti, Davide Berselli, Carlo Mariani, N. Jedrecy, M. Sauvage-Simkin, Y. Garreau, and R. Pinchaux
pp.
15760-15765
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Comparison of cluster and slab models of the surface structure of Cl-terminated Ge(111) and GaAs(111) surfaces
M. W. C. Dharma-wardana, M. Z. Zgierski, Douglas Ritchie, Jiang Guo Ping, and Harry Ruda
pp.
15766-15771
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Surface phonons of thin GaSe and InSe films epitaxially grown on the Si(111)(1×1)-H surface
V. Panella, A. L. Glebov, J. P. Toennies, C. Sébenne, C. Eckl, C. Adler, P. Pavone, and U. Schröder
pp.
15772-15778
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Apparent charge transfer at the GexPb1-x/Ge(111) interface
Roland R. Stumpf, Joseph M. Carpinelli, and Hanno H. Weitering
pp.
15779-15783
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Point-contact conductances at the quantum Hall transition
Martin Janssen, Marcus Metzler, and Martin R. Zirnbauer
pp.
15836-15853
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Dependence of interface states in the Si band gap on oxide atomic density and interfacial roughness
Yoshiyuki Yamashita, Akira Asano, Yasushiro Nishioka, and Hikaru Kobayashi
pp.
15872-15881
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Theoretical analysis of channel drop tunneling processes
Shanhui Fan, Pierre R. Villeneuve, J. D. Joannopoulos, M. J. Khan, C. Manolatou, and H. A. Haus
pp.
15882-15892
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Halogen etching of Si(100)-2×1: Dependence on surface concentration
Koji Nakayama, C. M. Aldao, and J. H. Weaver
pp.
15893-15901
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Conductance of a finite missing hydrogen atomic line on Si(001)-(2×1)-H
P. Doumergue, L. Pizzagalli, C. Joachim, A. Altibelli, and A. Baratoff
pp.
15910-15916
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Surface physics, low-dimensional systems, and related topics
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Formation mechanism and relative stability of the {112¯0} stacking fault atomic configurations in wurtzite (Al,Ga,In) nitrides
P. Ruterana, B. Barbaray, A. Béré, P. Vermaut, A. Hairie, E. Paumier, G. Nouet, A. Salvador, A. Botchkarev, and H. Morkoç
pp.
15917-15925
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Thermal damping of quantum interference patterns of surface-state electrons
O. Jeandupeux, L. Bürgi, A. Hirstein, H. Brune, and K. Kern
pp.
15926-15934
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Influence of island diffusion on submonolayer epitaxial growth
P. L. Krapivsky, J. F. F. Mendes, and S. Redner
pp.
15950-15958
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Anharmonicity on Al(100) and Al(111) surfaces
R. Zivieri, G. Santoro, and V. Bortolani
pp.
15959-15965
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Fe thin-film growth on Au(100): A self-surfactant effect and its limitations
V. Blum, Ch. Rath, S. Müller, L. Hammer, K. Heinz, J. M. García, J. E. Ortega, J. E. Prieto, O. S. Hernán, J. M. Gallego, A. L. Vázquez de Parga, and R. Miranda
pp.
15966-15974
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Surface segregation energies in transition-metal alloys
A. V. Ruban, H. L. Skriver, and J. K. Nørskov
pp.
15990-16000
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Leakage current mechanisms in lead-based thin-film ferroelectric capacitors
B. Nagaraj, S. Aggarwal, T. K. Song, T. Sawhney, and R. Ramesh
pp.
16022-16027
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Model for phononic energy dissipation in friction
A. Buldum, D. M. Leitner, and S. Ciraci
pp.
16042-16046
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Retardation of O diffusion through polycrystalline Pt by Be doping
Roland Stumpf, Chun-Li Liu, and Clarence Tracy
pp.
16047-16052
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Theoretical study of single-atom extraction using STM
Fu-He Wang, Jin-Long Yang, and Jia-Ming Li
pp.
16053-16060
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Density of states of multichannel systems
Patrizia Vignolo, Riccardo Farchioni, and Giuseppe Grosso
pp.
16065-16070
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Phase transition, molecular motions, and inequivalent carbon atoms in K3C60 (111) single-phase ordered films
A. Goldoni, L. Sangaletti, F. Parmagiani, S. L. Friedmann, Z.-X. Shen, M. Peloi, G. Comelli, and G. Paolucci
pp.
16071-16075
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