Physical Review B
– 15 January 1999
Volume 59, Issue 3
BRIEF REPORTS
Electronic structure: wide-band, narrow-band, and strongly correlated systems
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Interband transitions in photonic crystals
Joshua N. Winn, Shanhui Fan, John D. Joannopoulos, and Erich P. Ippen
pp.
1551-1554
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Electronic band structure of CuInSe2: Bulk and (112) surface
J. A. Rodríguez, L. Quiroga, A. Camacho, and R. Baquero
pp.
1555-1558
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Semiconductors I: bulk
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Bragg diffraction from indium phosphide infilled fcc silica colloidal crystals
H. Míguez, A. Blanco, F. Meseguer, C. López, H. M. Yates, M. E. Pemble, V. Fornés, and A. Mifsud
pp.
1563-1566
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Electronic structure study of liquid germanium based on x-ray-absorption near-edge structure spectroscopy
Chenxi Li, Kunquan Lu, Yuren Wang, Kozaburo Tamura, Shinya Hosokawa, and Masanori Inui
pp.
1571-1574
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Reversible photoinduced changes of electronic transport in narrow-gap amorphous Sb2Se3
T. Aoki, H. Shimada, N. Hirao, N. Yoshida, K. Shimakawa, and S. R. Elliott
pp.
1579-1581
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Birefringence in ordered Ga0.47In0.53As/InP
R. Wirth, J. Porsche, F. Scholz, and A. Hangleiter
pp.
1582-1585
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Time-resolved far-infrared reflectance of n-type GaAs
Niels A. van Dantzig and Paul C. M. Planken
pp.
1586-1589
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Semiconductors II: surfaces, interfaces, microstructures, and related topics
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Piecewise diffusion of the silicon dimer
Brian Borovsky, Michael Krueger, and Eric Ganz
pp.
1598-1601
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End states due to a spin-Peierls transition in quantum wires
S. M. Reimann, M. Koskinen, and M. Manninen
pp.
1613-1616
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Two-electron artificial molecule
B. Partoens, A. Matulis, and F. M. Peeters
pp.
1617-1620
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Interface and longitudinal optical phonon modes in cylindrical quantum dots
Clément Kanyinda-Malu and Rosa María de la Cruz
pp.
1621-1624
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Photoluminescence kinetics of indirect excitons in GaAs/AlxGa1-xAs coupled quantum wells
L. V. Butov, A. Imamoglu, A. V. Mintsev, K. L. Campman, and A. C. Gossard
pp.
1625-1628
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Effect of cross capacitance in three-junction single-electron transistors
Jinhee Kim, Sangchul Oh, Jong Wan Park, Jeong-O Lee, Hyuk Chan Kwon, Se Il Park, Kyu Tae Kim, Kyung Hwa Yoo, and Ju-Jin Kim
pp.
1629-1632
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Rehybridization of electronic structure in compressed two-dimensional quantum dot superlattices
G. Medeiros-Ribeiro, D. A. A. Ohlberg, R. Stanley Williams, and James R. Heath
pp.
1633-1636
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Magnetoluminescence oscillations of a doped (Al,Ga)As/GaAs single heterojunction
Yongmin Kim, C. H. Perry, Kyu-Seok Lee, and D. G. Rickel
pp.
1641-1644
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Raman spectral study of silicon nanowires
Bibo Li, Dapeng Yu, and Shu-Lin Zhang
pp.
1645-1648
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Surface physics, low-dimensional systems, and related topics
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Ground-state energy of confined charged bosons in two dimensions
A. Gonzalez, B. Partoens, A. Matulis, and F. M. Peeters
pp.
1653-1656
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Imaging of sub-unit-cell structures in the contact mode of the scanning force microscope
H. Hölscher, W. Raberg, U. D. Schwarz, A. Hasbach, K. Wandelt, and R. Wiesendanger
pp.
1661-1664
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Structural studies of multiwall carbon nanotubes by neutron diffraction
A. Burian, J. C. Dore, H. E. Fischer, and J. Sloan
pp.
1665-1668
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Multilayer-relaxed structure of the (1×2) Pt(110) surface
J. I. Lee, W. Mannstadt, and A. J. Freeman
pp.
1673-1676
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Oscillatory lattice relaxation at metal surfaces
Jun-Hyung Cho, Ismail, Zhenyu Zhang, and E. W. Plummer
pp.
1677-1680
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Imperfect magnetic nanostructures on a Ag(001) surface
V. S. Stepanyuk, W. Hergert, P. Rennert, K. Wildberger, R. Zeller, and P. H. Dederichs
pp.
1681-1684
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Far-infrared absorption in small metal particles
A. V. Plyukhin, A. K. Sarychev, and A. M. Dykhne
pp.
1685-1688
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Attempt to deposit carbon nitride films by electrodeposition from an organic liquid
Qiang Fu, Jin-Ting Jiu, Kai Cai, Hao Wang, Chuan-Bao Cao, and He-Sun Zhu
pp.
1693-1696
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ARTICLES
Electronic structure: wide-band, narrow-band, and strongly correlated systems
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Effect of nonadiabaticity and disorder on nonlinear optical susceptibilities
W. Z. Wang, Z. Shuai, A. Saxena, A. R. Bishop, and J. L. Brédas
pp.
1697-1700
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Form factors in the half-filled Hubbard model
Fabian H. L. Eßler and Vladimir E. Korepin
pp.
1734-1738
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Metal-insulator transition in a degenerate Hubbard model
Priya Mahadevan and D. D. Sarma
pp.
1739-1742
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Bulk and surface electronic structures of the semimetal Bi studied by angle-resolved photoemission spectroscopy
Akinori Tanaka, Masayuki Hatano, Kazutoshi Takahashi, Hiroyuki Sasaki, Shoji Suzuki, and Shigeru Sato
pp.
1786-1791
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Magnetotransport in the doped Mott insulator
Ekkehard Lange and Gabriel Kotliar
pp.
1800-1807
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Low-energy electrodynamics of SmB6
B. Gorshunov, N. Sluchanko, A. Volkov, M. Dressel, G. Knebel, A. Loidl, and S. Kunii
pp.
1808-1814
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Electronic structure of Ce1-xSrxTiO3: Comparison between substitutional and vacancy doping
T. Yokoya, T. Sato, H. Fujisawa, T. Takahashi, A. Chainani, and M. Onoda
pp.
1815-1818
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Evidence of dynamic Jahn-Teller distortions in two-dimensional crystalline molecular films
Jaewu Choi, P. A. Dowben, C. N. Borca, Shireen Adenwalla, A. V. Bune, Stephen Ducharme, V. M. Fridkin, S. P. Palto, and N. Petukhova
pp.
1819-1824
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Transport properties of one-dimensional Hubbard models
S. Kirchner, H. G. Evertz, and W. Hanke
pp.
1825-1833
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Heterovalent and A-atom effects in A(B′B″)O3 perovskite alloys
L. Bellaiche, J. Padilla, and David Vanderbilt
pp.
1834-1839
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Dielectric function of hexagonal AlN films determined by spectroscopic ellipsometry in the vacuum-uv spectral range
T. Wethkamp, K. Wilmers, C. Cobet, N. Esser, W. Richter, O. Ambacher, M. Stutzmann, and M. Cardona
pp.
1845-1849
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Excitonic effects in linear and nonlinear optical properties of C60
F. Bechstedt, M. Fiedler, and L. J. Sham
pp.
1857-1869
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Ab initio and semiempirical calculations of H- centers in MgO crystals
M. M. Kuklja, E. V. Stefanovich, E. A. Kotomin, A. I. Popov, R. González, and Y. Chen
pp.
1885-1890
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Orbital Kondo effect in CexLa1-xB6: Scaling analysis
H. Kusunose and Y. Kuramoto
pp.
1902-1911
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Semiconductors I: bulk
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Modeling hydrogen in CuInSe2 and CuInS2 solar cell materials using implanted muons
J. M. Gil, P. J. Mendes, L. P. Ferreira, H. V. Alberto, R. C. Vilão, N. Ayres de Campos, A. Weidinger, Y. Tomm, Ch. Niedermayer, M. V. Yakushev, R. D. Tomlinson, S. P. Cottrell, and S. F. J. Cox
pp.
1912-1916
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Finite-size errors in quantum many-body simulations of extended systems
P. R. C. Kent, Randolph Q. Hood, A. J. Williamson, R. J. Needs, W. M. C. Foulkes, and G. Rajagopal
pp.
1917-1929
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Optically detected electron paramagnetic resonance of AlN single crystals
P. M. Mason, H. Przybylinska, G. D. Watkins, W. J. Choyke, and G. A. Slack
pp.
1937-1947
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Positron affinity in semiconductors: Theoretical and experimental studies
J. Kuriplach, M. Šob, G. Brauer, W. Anwand, E.-M. Nicht, P. G. Coleman, and N. Wagner
pp.
1948-1955
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Properties of the D1 bound exciton in 4H-SiC
T. Egilsson, J. P. Bergman, I. G. Ivanov, A. Henry, and E. Janzén
pp.
1956-1963
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Exciton-impurity interactions in high-purity InP
R. Benzaquen, R. Leonelli, and S. Charbonneau
pp.
1973-1985
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Optically pumped NMR in CdS single crystals
Tanja Pietraß and Marco Tomaselli
pp.
1986-1989
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Semiconductors II: surfaces, interfaces, microstructures, and related topics
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Evolution of coherent islands in Si1-xGex/Si(001)
J. A. Floro, E. Chason, L. B. Freund, R. D. Twesten, R. Q. Hwang, and G. A. Lucadamo
pp.
1990-1998
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Acoustic waves in finite superlattices: Influence of buffer layers
M. Hammouchi, E. H. El Boudouti, A. Nougaoui, B. Djafari-Rouhani, M. L. H. Lahlaouti, A. Akjouj, and L. Dobrzynski
pp.
1999-2010
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Photoionization of silicon particles in SiO2
V. V. Afanas’ev and A. Stesmans
pp.
2025-2034
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Electron standing waves on the Si(111)- √3×√3-Ag surface
Norio Sato, Sakura Takeda, Tadaaki Nagao, and Shuji Hasegawa
pp.
2035-2039
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Size effect on chalcogen deep levels in Si quantum dots
Jian Song, Shang Yuan Ren, and John D. Dow
pp.
2045-2049
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Mn spin domains in highly photoexcited (Cd,Mn)Te/(Cd,Mg)Te quantum wells
M. G. Tyazhlov, V. D. Kulakovskii, A. I. Filin, D. R. Yakovlev, A. Waag, and G. Landwehr
pp.
2050-2056
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Longitudinal effective mass and band structure of quasiperiodic Fibonacci superlattices
A. Bruno-Alfonso, F. J. Ribeiro, A. Latgé, and L. E. Oliveira
pp.
2057-2062
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Coupled quantum dots as quantum gates
Guido Burkard, Daniel Loss, and David P. DiVincenzo
pp.
2070-2078
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Angle-resolved Raman spectroscopy of the collective modes in an electron bilayer
D. S. Kainth, D. Richards, A. S. Bhatti, H. P. Hughes, M. Y. Simmons, E. H. Linfield, and D. A. Ritchie
pp.
2095-2101
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Berry phase and adiabaticity of a spin diffusing in a nonuniform magnetic field
S. A. van Langen, H. P. A. Knops, J. C. J. Paasschens, and C. W. J. Beenakker
pp.
2102-2110
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Spin-dependent recombination of photoinduced carriers in phthalocyanine/C60 heterojunctions
Ichiro Hiromitsu, Yoshiaki Kaimori, Mayuko Kitano, and Takashi Ito
pp.
2151-2163
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Persistent photoconductivity in semimetallic AlxGa1-xSb/InAs quantum wells
L. C. Tsai, J. C. Fan, Y. F. Chen, and Ikai Lo
pp.
2174-2179
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Angle dependence of the spontaneous emission from confined optical modes in photonic dots
T. Gutbrod, M. Bayer, A. Forchel, P. A. Knipp, T. L. Reinecke, A. Tartakovskii, V. D. Kulakovskii, N. A. Gippius, and S. G. Tikhodeev
pp.
2223-2229
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Structural fingerprints in the reflectance anisotropy spectra of InP(001)(2×4) surfaces
W. G. Schmidt, E. L. Briggs, J. Bernholc, and F. Bechstedt
pp.
2234-2239
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Strong emission from As monolayers in AlSb
E. R. Glaser, T. A. Kennedy, B. R. Bennett, and B. V. Shanabrook
pp.
2240-2244
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Excitonic absorption of GaN epilayers on sapphire: Dynamics, intensity, and temperature dependence
H. Haag, P. Gilliot, R. Lévy, B. Hönerlage, O. Briot, S. Ruffenach-Clur, and R. L. Aulombard
pp.
2254-2260
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Bound polaron in a polar semiconductor heterojunction
S. L. Ban and J. E. Hasbun
pp.
2276-2283
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Surface physics, low-dimensional systems, and related topics
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Structural transitions and global minima of sodium chloride clusters
Jonathan P. K. Doye and David J. Wales
pp.
2292-2300
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Oxygen K-edge x-ray-absorption fine-structure study of surface methoxy species on Cu(111) and Ni(111)
K. Amemiya, Y. Kitajima, Y. Yonamoto, S. Terada, H. Tsukabayashi, T. Yokoyama, and T. Ohta
pp.
2307-2312
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Photoelectron diffraction study of ultrathin Fe films on Cu{111}
A. Theobald, O. Schaff, C. J. Hirschmugl, V. Fernandez, K.-M. Schindler, M. Polcik, A. M. Bradshaw, and D. P. Woodruff
pp.
2313-2319
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Surface-morphology evolution during unstable homoepitaxial growth of GaAs(110)
P. Tejedor, P. Šmilauer, C. Roberts, and B. A. Joyce
pp.
2341-2345
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Structural transformations in the Stranski-Krastanov growth of Mg on Mo(001)
M. C. Gallagher, M. S. Fyfield, and S. A. Joyce
pp.
2346-2351
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Gold-induced faceting on a Si(001) vicinal surface: Spot-profile-analyzing LEED and reflection-electron-microscopy study
H. Minoda, K. Yagi, F.-J. Meyer zu Heringdorf, A. Meier, D. Kähler, and M. Horn von Hoegen
pp.
2363-2375
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Finite-size effect on the Raman spectra of carbon nanotubes
R. Saito, T. Takeya, T. Kimura, G. Dresselhaus, and M. S. Dresselhaus
pp.
2388-2392
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Spectroscopy of low-coordinated surface sites: Theoretical study of MgO
Alexander L. Shluger, Peter V. Sushko, and Lev N. Kantorovich
pp.
2417-2430
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Co/Pt(110) interface: An x-ray-diffraction study
E. Lundgren, J. Alvarez, X. Torrelles, K. F. Peters, H. Isern, and S. Ferrer
pp.
2431-2435
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Model of noncontact scanning force microscopy on ionic surfaces
Alexander I. Livshits, Alexander L. Shluger, Andrew L. Rohl, and Adam S. Foster
pp.
2436-2448
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Near-field optical microscopy of two-dimensional photonic and plasmonic crystals
Igor I. Smolyaninov, Walid Atia, and Christopher C. Davis
pp.
2454-2460
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ERRATA
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Erratum: Occupied and unoccupied electronic band structure of WSe2 [Phys. Rev. B 55, 10 400 (1997)]
Th. Finteis, M. Hengsberger, Th. Straub, K. Fauth, R. Claessen, P. Auer, P. Steiner, S. Hüfner, P. Blaha, M. Vögt, M. Lux-Steiner, and E. Bucher
pp.
2461
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