Physical Review B
– 15 February 1999
Volume 59, Issue 7
BRIEF REPORTS
Electronic structure: wide-band, narrow-band, and strongly correlated systems
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Electronic and magnetic states in doped LaCoO3
K. Tsutsui, J. Inoue, and S. Maekawa
pp.
4549-4552
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Exactly solvable site-dependent Hubbard model
Feng Pan and J. P. Draayer
pp.
4553-4556
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Anisotropy of thermal expansion and electronic topological transitions in Zn and Cd under pressure
D. L. Novikov, M. I. Katsnelson, A. V. Trefilov, A. J. Freeman, N. E. Christensen, A. Svane, and C. O. Rodriguez
pp.
4557-4560
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Electrical and magnetic properties of the two crystallographic forms of BaRuO3
J. T. Rijssenbeek, R. Jin, Yu. Zadorozhny, Y. Liu, B. Batlogg, and R. J. Cava
pp.
4561-4564
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Phase separation in models for correlated electrons
Kristel Michielsen and Hans De Raedt
pp.
4565-4567
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Semiconductors I: bulk
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Temperature-dependent electron-lattice thermalization in GaAs
N. Del Fatti, P. Langot, R. Tommasi, and F. Vallée
pp.
4576-4579
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Semiconductors II: surfaces, interfaces, microstructures, and related topics
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Two-dimensional hopping conductivity in a δ-doped GaAs/AlxGa1-xAs heterostructure
S. I. Khondaker, I. S. Shlimak, J. T. Nicholls, M. Pepper, and D. A. Ritchie
pp.
4580-4583
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Mixed biexcitons in single quantum wells
H. P. Wagner, W. Langbein, and J. M. Hvam
pp.
4584-4587
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Atomic structure of the Sb-induced Si(111)-(5√3×5√3)R30° surface: Ab initio calculations
Young-Jo Ko, Kang-Ho Park, Jeong Sook Ha, and Wan Soo Yun
pp.
4588-4591
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Evolution of macrosteps on 6H-SiC(0001): Impurity-induced morphological instability of step trains
Noboru Ohtani, Masakazu Katsuno, Jun Takahashi, Hirokatsu Yashiro, and Masatoshi Kanaya
pp.
4592-4595
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Optical properties of anisotropic exciton: Hyperspherical theory
E. A. Muljarov, A. L. Yablonskii, S. G. Tikhodeev, A. E. Bulatov, and Joseph L. Birman
pp.
4600-4603
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Phase coherence in mesoscopic systems at low temperatures
Kamran Houshangpour and Klaus Maschke
pp.
4615-4617
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Evidence for ballistic electron transport exceeding 160 μm in an undoped GaAs/AlxGa1-xAs field-effect transistor
G. R. Facer, B. E. Kane, A. S. Dzurak, R. J. Heron, N. E. Lumpkin, R. G. Clark, L. N. Pfeiffer, and K. W. West
pp.
4622-4625
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Band-edge modifications due to photogenerated carriers in single p-type δ-doped GaAs layers
A. Levine, E. C. F. da Silva, G. M. Sipahi, A. A. Quivy, L. M. R. Scolfaro, J. R. Leite, I. F. L. Dias, E. Lauretto, J. B. B. de Oliveira, E. A. Meneses, and A. G. Oliveira
pp.
4634-4637
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Surface physics, low-dimensional systems, and related topics
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Scanned potential microscopy of edge and bulk currents in the quantum Hall regime
Kent L. McCormick, Michael T. Woodside, Mike Huang, Mingshaw Wu, Paul L. McEuen, Cem Duruoz, and J. S. Harris, , Jr.
pp.
4654-4657
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Time-dependent single molecule spectral lines
Taras Plakhotnik
pp.
4658-4660
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ARTICLES
Electronic structure: wide-band, narrow-band, and strongly correlated systems
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Possible exotic phases in the one-dimensional extended Hubbard model
R. Torsten Clay, Anders W. Sandvik, and David K. Campbell
pp.
4665-4679
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Band widening in graphite
C. Heske, R. Treusch, F. J. Himpsel, S. Kakar, L. J. Terminello, H. J. Weyer, and E. L. Shirley
pp.
4680-4684
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Extrapolative approaches to Brillouin-zone integration
C. J. Pickard and M. C. Payne
pp.
4685-4693
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Unified treatment of asymptotic van der Waals forces
Erika Hult, Henrik Rydberg, Bengt I. Lundqvist, and David C. Langreth
pp.
4708-4713
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Effect of quasi-two-dimensional Fermi surfaces on electronic properties in YbSb2
N. Sato, T. Kinokiri, T. Komatsubara, and H. Harima
pp.
4714-4719
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Fermi surface of the ferromagnetic semimetal, EuB6
M. C. Aronson, J. L. Sarrao, Z. Fisk, M. Whitton, and B. L. Brandt
pp.
4720-4724
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Hall effect in the perovskite manganites
Pinaki Majumdar, Steven H. Simon, and Anirvan M. Sengupta
pp.
4746-4751
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Variable-range hopping: Role of Coulomb interactions
Subhalakshmi Lamba and Deepak Kumar
pp.
4752-4765
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Dielectric properties of the electron glass
Subhalakshmi Lamba and Deepak Kumar
pp.
4766-4776
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Photoconversion of F-type centers in thermochemically reduced MgO single crystals
R. González, M. A. Monge, J. E. Muñoz Santiuste, R. Pareja, Y. Chen, E. Kotomin, M. M. Kukla, and A. I. Popov
pp.
4786-4790
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Valence-band electronic structure of Co3O4 epitaxy on CoO(100)
M. A. Langell, M. D. Anderson, G. A. Carson, L. Peng, and S. Smith
pp.
4791-4798
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Semiconductors I: bulk
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Chemical and strain effects on Boron-doped Si(100)
M. Ramamoorthy, E. L. Briggs, and J. Bernholc
pp.
4813-4821
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Diagrammatic exciton-basis valence-bond theory of linear polyenes
M. Chandross, Y. Shimoi, and S. Mazumdar
pp.
4822-4838
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Theory of even-parity states in polyphenylenes
A. Chakrabarti and S. Mazumdar
pp.
4839-4848
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Electron-spin-resonance center of dangling bonds in undoped a-Si:H
T. Umeda, S. Yamasaki, J. Isoya, and K. Tanaka
pp.
4849-4857
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Excitation spectrum of a PtLi-related center in silicon
Per Tidlund, Mats Kleverman, and Pavel Hazdra
pp.
4858-4863
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Hydrogen-induced states near the GaAs band edges
A. Amore Bonapasta, Mario Capizzi, and Paolo Giannozzi
pp.
4869-4880
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Energy levels of the d*8 electron and d*2 hole system
Du Mao Lu and Tae Ho Yeom
pp.
4881-4887
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Mechanism for hydrogen-enhanced oxygen diffusion in silicon
R. B. Capaz, L. V. C. Assali, L. C. Kimerling, K. Cho, and J. D. Joannopoulos
pp.
4898-4900
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Dynamics of negative muonium in n-type silicon
B. Hitti, S. R. Kreitzman, T. L. Estle, E. S. Bates, M. R. Dawdy, T. L. Head, and R. L. Lichti
pp.
4918-4924
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Semiconductors II: surfaces, interfaces, microstructures, and related topics
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Ultrafast carrier dynamics near the Si(100)2×1 surface
Seongtae Jeong and Jeffrey Bokor
pp.
4943-4951
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Dynamics of exciton localization in CdS/HgS quantum-dot quantum wells
Alvin T. Yeh, Giulio Cerullo, Uri Banin, Alf Mews, A. Paul Alivisatos, and Charles V. Shank
pp.
4973-4979
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Confinement and electron-phonon interactions of the E1 exciton in self-organized Ge quantum dots
S. H. Kwok, P. Y. Yu, C. H. Tung, Y. H. Zhang, M. F. Li, C. S. Peng, and J. M. Zhou
pp.
4980-4984
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Unoccupied band structure of wurtzite GaN(0001)
T. Valla, P. D. Johnson, S. S. Dhesi, K. E. Smith, D. Doppalapudi, T. D. Moustakas, and E. L. Shirley
pp.
5003-5007
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Luminescence and Raman scattering in periodically δ-doped GaAs
C. A. Siqueira, W. N. Rodrigues, M. V. B. Moreira, A. G. de Oliveira, A. S. Chaves, and L. Ioriatti
pp.
5008-5012
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Dispersion of polar optical phonons in wurtzite quantum wells
S. M. Komirenko, K. W. Kim, M. A. Stroscio, and M. Dutta
pp.
5013-5020
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Time-resolved studies of single semiconductor quantum dots
Valéry Zwiller, Mats-Erik Pistol, Dan Hessman, Rolf Cederström, Werner Seifert, and Lars Samuelson
pp.
5021-5025
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Exciton-light coupling in single and coupled semiconductor microcavities: Polariton dispersion and polarization splitting
Giovanna Panzarini, Lucio Claudio Andreani, A. Armitage, D. Baxter, M. S. Skolnick, V. N. Astratov, J. S. Roberts, Alexey V. Kavokin, Maria R. Vladimirova, and M. A. Kaliteevski
pp.
5082-5089
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Surface physics, low-dimensional systems, and related topics
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Initial stages of Ba adsorption on the Si(100)-(2×1) surface at room temperature
X. Yao, Xiaoming Hu, D. Sarid, Z. Yu, J. Wang, D. S. Marshall, R. Droopad, J. K. Abrokwah, J. A. Hallmark, and W. J. Ooms
pp.
5115-5119
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Interpretation of long-range interatomic force
A. Buldum, S. Ciraci, C. Y. Fong, and J. S. Nelson
pp.
5120-5125
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Detailed atomic structure of arbitrary fcc [100] twist grain boundaries
D. Romeu, L. Beltrán-del-Rio, J. L. Aragón, and A. Gómez
pp.
5134-5141
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Role of nitrogen in the formation of hard and elastic CNx thin films by reactive magnetron sputtering
Niklas Hellgren, Mats P. Johansson, Esteban Broitman, Lars Hultman, and Jan-Eric Sundgren
pp.
5162-5169
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Interaction between oxygen vacancies on MgO(100)
Fabio Finocchi, Jacek Goniakowski, and Claudine Noguera
pp.
5178-5188
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Resonant soft-x-ray emission spectroscopy of surface adsorbates: Theory, computations, and measurements of ethylene and benzene on Cu(110)
Luciano Triguero, Yi Luo, Lars G. M. Pettersson, Hans Ågren, Peter Väterlein, Martin Weinelt, Alexander Föhlisch, Jörgen Hasselström, Olof Karis, and Anders Nilsson
pp.
5189-5200
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Electronic structure and magnetism of Rhn (n=2–13) clusters
B. V. Reddy, S. K. Nayak, S. N. Khanna, B. K. Rao, and P. Jena
pp.
5214-5222
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