corner
corner
PROLA » Phys. Rev. B » Volume 60 » Issue 19
< Previous Issue | Next Issue >

Physical Review B – 15 November 1999
Volume 60, Issue 19

BRIEF REPORTS

Electronic structure: wide-band, narrow-band, and strongly correlated systems

•
First-principles calculation of the effect of atomic disorder on the electronic structure of the half-metallic ferromagnet NiMnSb
D. Orgassa, H. Fujiwara, T. C. Schulthess, and W. H. Butler
pp. 13237-13240 [View PDF (59 kB)]
•
First-principles molecular dynamics of metallic systems
Joost VandeVondele and Alessandro De Vita
pp. 13241-13244 [View PDF (58 kB)]
•
Electronic structure of Si and Ge gold-doped clathrates
Rüdiger F. W. Herrmann, Katsumi Tanigaki, Tetsuji Kawaguchi, Sadanori Kuroshima, and Otto Zhou
pp. 13245-13248 [View PDF (49 kB)]
•
Elastic behavior near the metal-insulator transition of VO2
D. Maurer, A. Leue, R. Heichele, and V. Müller
pp. 13249-13252 [View PDF (48 kB)]
•
XANES study of rare-earth valency in LRu4P12 (L=Ce and Pr)
C. H. Lee, H. Oyanagi, C. Sekine, I. Shirotani, and M. Ishii
pp. 13253-13256 [View PDF (63 kB)]
•
Temperature-dependent resonant photoemission study of the metallic and charge-ordered phases of Pr1-xSrxMnO3
J.-S. Kang, C. G. Olson, J. H. Jung, S. T. Lee, T. W. Noh, and B. I. Min
pp. 13257-13260 [View PDF (71 kB)]

Semiconductors I: bulk

•
Polytypic transformations in SiC: An ab initio study
P. Käckell, J. Furthmüller, and F. Bechstedt
pp. 13261-13264 [View PDF (58 kB)]
•
Raman spectroscopy of hydrogen molecules in GaAs
A. W. R. Leitch and J. Weber
pp. 13265-13268 [View PDF (47 kB)]
•
Fano resonance of LO-phonon-coupled excited states of Li acceptors in ZnSe and Luttinger parameters
H. Nakata, K. Yamada, and T. Ohyama
pp. 13269-13271 [View PDF (52 kB)]

Semiconductors II: surfaces, interfaces, microstructures, and related topics

•
Circularly polarized dynamic Franz-Keldysh effect
D. S. Citrin and S. Hughes
pp. 13272-13275 [View PDF (75 kB)]
•
Strong-coupling regime for quantum boxes in pillar microcavities: Theory
Lucio Claudio Andreani, Giovanna Panzarini, and Jean-Michel Gérard
pp. 13276-13279 [View PDF (62 kB)]
•
Sb/Si(110) 2×3 surface studied with scanning tunneling microscopy: Evidence for adatom reconstruction
A. Cricenti, P. Perfetti, G. Le Lay, J. Zeysing, G. Falkenberg, L. Seehofer, and R. L. Johnson
pp. 13280-13282 [View PDF (205 kB)]
•
Cation-rich (100) surface reconstructions of InP and GaP
S. Mirbt, N. Moll, K. Cho, and J. D. Joannopoulos
pp. 13283-13286 [View PDF (172 kB)]
•
Structural phase transitions of Pb-adsorbed Si(111) surfaces at low temperatures
Kotaro Horikoshi, Xiao Tong, Tadaaki Nagao, and Shuji Hasegawa
pp. 13287-13290 [View PDF (435 kB)]
•
Vibrational structure of ultrathin 8-hydroxyquinoline aluminum films studied by high-resolution electron-energy-loss spectroscopy
X. M. Ding, L. M. Hung, C. S. Lee, and S. T. Lee
pp. 13291-13293 [View PDF (37 kB)]
•
Acoustic stop bands of surface and bulk modes in two-dimensional phononic lattices consisting of aluminum and a polymer
Yukihiro Tanaka and Shin-ichiro Tamura
pp. 13294-13297 [View PDF (167 kB)]
•
Optical spectroscopy study of the phase of the reflection coefficient of a single quantum well in the exciton resonance region
G. Malpuech, A. Kavokin, J. Leymarie, P. Disseix, and A. Vasson
pp. 13298-13301 [View PDF (58 kB)]
•
Dissociation of indirect excitons: Discontinuity and bistability in the tunnel current of single-barrier heterostructures
A. Parlangeli, P. C. M. Christianen, A. K. Geim, J. C. Maan, L. Eaves, P. C. Main, and M. Henini
pp. 13302-13305 [View PDF (61 kB)]
•
Dipole matrix elements and the nature of charge oscillation under coherent interband excitation in quantum wells
R. A. Coles, R. A. Abram, S. Brand, and M. G. Burt
pp. 13306-13309 [View PDF (56 kB)]
•
Plasmons and the quantum limit in semiconductor wires
Florent Perez, Bernard Jusserand, and Bernard Etienne
pp. 13310-13313 [View PDF (68 kB)]
•
Electron transport through a double-quantum-dot structure with intradot and interdot Coulomb interactions
J. Q. You and H. Z. Zheng
pp. 13314-13317 [View PDF (68 kB)]
•
Positive and negative persistent photoconductivity in a two-side-doped In0.53Ga0.47As/In0.52Al0.48As quantum well
D. R. Hang, Y. F. Chen, F. F. Fang, and W. I. Wang
pp. 13318-13321 [View PDF (59 kB)]

Surface physics, low-dimensional systems, and related topics

•
Structure and stability of solid C36
Madhu Menon and Ernst Richter
pp. 13322-13324 [View PDF (443 kB)]
•
Effects of temperature and orientation on the stability of surfaces of stressed crystals
Y. W. Zhang
pp. 13325-13327 [View PDF (53 kB)]
•
STM study of a Pb/Si(111) interface at room and low temperatures
J. Slezák, P. Mutombo, and V. Cháb
pp. 13328-13330 [View PDF (633 kB)]
•
Cathodoluminescent properties of pulsed-laser-deposited Eu-activated Y2O3 epitaxial films
D. Kumar, K. G. Cho, Zhan Chen, V. Craciun, P. H. Holloway, and Rajiv K. Singh
pp. 13331-13334 [View PDF (67 kB)]
•
Near-field low-temperature photoluminescence spectroscopy of single V-shaped quantum wires
V. Emiliani, Ch. Lienau, M. Hauert, G. Colí, M. DeGiorgi, R. Rinaldi, A. Passaseo, and R. Cingolani
pp. 13335-13338 [View PDF (183 kB)]
•
Amphoteric doping of single-wall carbon-nanotube thin films as probed by optical absorption spectroscopy
S. Kazaoui, N. Minami, R. Jacquemin, H. Kataura, and Y. Achiba
pp. 13339-13342 [View PDF (63 kB)]
•
Electrostatics of an inhomogeneous quantum hall liquid
A. L. Efros
pp. 13343-13346 [View PDF (44 kB)]
•
Resonances in low-energy electron transmission through organized organic films: Evidence for molecular quantum wells
K. Ray, A. Shanzer, D. H. Waldeck, and R. Naaman
pp. 13347-13350 [View PDF (104 kB)]
•
Rotation-vibrational dynamics of solid C60: A Raman study
P. M. Rafailov, V. G. Hadjiev, A. R. Goñi, and C. Thomsen
pp. 13351-13354 [View PDF (68 kB)]

ARTICLES

Electronic structure: wide-band, narrow-band, and strongly correlated systems

•
Antiferromagnetism of the half-filled Anderson lattice in one dimension
Costas Papatriantafillou, Nicholas Kioussis, and Sung Ha Park
pp. 13355-13360 [View PDF (80 kB)]
•
Correlation functions for a two-dimensional electron system with bosonic interactions and a square Fermi surface
J. O. Fjærestad, A. Sudbø, and A. Luther
pp. 13361-13370 [View PDF (124 kB)]
•
de Haas–van Alphen and Shubnikov–de Haas oscillations in RAgSb2 (R=Y, La-Nd, Sm)
K. D. Myers, S. L. Bud’ko, V. P. Antropov, B. N. Harmon, P. C. Canfield, and A. H. Lacerda
pp. 13371-13379 [View PDF (232 kB)]
•
Mechanism for linear and nonlinear optical effects in β-BaB2O4 crystals
Jiao Lin, Ming-Hsien Lee, Zhi-Ping Liu, Chuangtian Chen, and Chris J. Pickard
pp. 13380-13389 [View PDF (129 kB)]
•
Band structure and Fermi surface of URu2Si2 studied by high-resolution angle-resolved photoemission spectroscopy
T. Ito, H. Kumigashira, T. Takahashi, Y. Haga, E. Yamamoto, T. Honma, H. Ohkuni, and Y. Ōnuki
pp. 13390-13395 [View PDF (369 kB)]
•
Electronic structure and magnetism of Fe3-xVxX (X=Si, Ga, and Al) alloys by the KKR-CPA method
A. Bansil, S. Kaprzyk, P. E. Mijnarends, and J. Toboła
pp. 13396-13412 [View PDF (369 kB)]
•
Unoccupied electronic structure of Li2CuO2
R. Neudert, H. Rosner, S.-L. Drechsler, M. Kielwein, M. Sing, Z. Hu, M. Knupfer, M. S. Golden, J. Fink, N. Nücker, M. Merz, S. Schuppler, N. Motoyama, H. Eisaki, S. Uchida, M. Domke, and G. Kaindl
pp. 13413-13417 [View PDF (69 kB)]
•
Two-leg t-J ladder: A mean-field description
Y. L. Lee, Y. W. Lee, C.-Y. Mou, and Z. Y. Weng
pp. 13418-13428 [View PDF (142 kB)]
•
Theory of the correlated-electron semiconductor Ce3Bi4Pt3
S. H. Liu
pp. 13429-13438 [View PDF (137 kB)]
•
Hall and Nernst effects in some models of anisotropic metals
D. V. Livanov
pp. 13439-13443 [View PDF (68 kB)]
•
Electronic transport properties of Sierpinski lattices
Youyan Liu, Zhilin Hou, P. M. Hui, and Wichit Sritrakool
pp. 13444-13452 [View PDF (354 kB)]
•
Transition-metal pentatellurides as potential low-temperature thermoelectric refrigeration materials
R. T. Littleton, IV, Terry M. Tritt, J. W. Kolis, and D. R. Ketchum
pp. 13453-13457 [View PDF (78 kB)]
•
Orbital polarons in the metal-insulator transition of manganites
R. Kilian and G. Khaliullin
pp. 13458-13469 [View PDF (231 kB)]
•
Spherical random-bond–random-field model of relaxor ferroelectrics
R. Pirc and R. Blinc
pp. 13470-13478 [View PDF (119 kB)]
•
Low-energy conductivity of PF6-doped polypyrrole
B. Chapman, R. G. Buckley, N. T. Kemp, A. B. Kaiser, D. Beaglehole, and H. J. Trodahl
pp. 13479-13483 [View PDF (59 kB)]
•
Charge-density wave and quantum fluctuations in a molecular crystal
N. Macris and C.-A. Piguet
pp. 13484-13491 [View PDF (107 kB)]
•
Quantum interference of electrons in multiwall carbon nanotubes
Akihiko Fujiwara, Kozue Tomiyama, Hiroyoshi Suematsu, Motoo Yumura, and Kunio Uchida
pp. 13492-13496 [View PDF (192 kB)]
•
Quadrupolar excitation channels at the L3 edge of rare-earth ions probed by resonant inelastic x-ray scattering
Fernando Bartolomé, Michael H. Krisch, Denis Raoux, and Jean-Marc Tonnerre
pp. 13497-13506 [View PDF (474 kB)]
•
Inelastic neutron scattering study of the Kondo semiconductor YbB12
E. V. Nefeodova, P. A. Alekseev, J.-M. Mignot, V. N. Lazukov, I. P. Sadikov, Yu. B. Paderno, N. Yu. Shitsevalova, and R. S. Eccleston
pp. 13507-13514 [View PDF (131 kB)]
•
Electron spin resonance of Gd3+ and Nd3+ in LuInA4 (A=Cu,Ni)
P. G. Pagliuso, C. Rettori, J. L. Sarrao, A. Cornelius, M. F. Hundley, Z. Fisk, and S. B. Oseroff
pp. 13515-13519 [View PDF (81 kB)]

Semiconductors I: bulk

•
High-energy x-ray diffraction study of pure amorphous silicon
Khalid Laaziri, S. Kycia, S. Roorda, M. Chicoine, J. L. Robertson, J. Wang, and S. C. Moss
pp. 13520-13533 [View PDF (206 kB)]
•
Muonium as a hydrogen analogue in silicon and germanium: Quantum effects and hyperfine parameters
A. R. Porter, M. D. Towler, and R. J. Needs
pp. 13534-13546 [View PDF (147 kB)]
•
First-principles total-energy calculations of atomic and electronic structure in relaxed Si1-x-yGexCy
M. Ohfuti, M. Ikeda, Y. Awano, and N. Yokoyama
pp. 13547-13554 [View PDF (462 kB)]
•
Spin-flip Raman scattering of wide-band-gap II-VI ternary alloys
D. Wolverson, J. J. Davies, C. L. Orange, K. Ogata, Sz. Fujita, Sg. Fujita, K. Nakano, H. Okuyama, S. Itoh, B. Jobst, and D. Hommel
pp. 13555-13560 [View PDF (82 kB)]
•
Optical and electrical properties of doped amorphous silicon suboxides
R. Janssen, A. Janotta, D. Dimova-Malinovska, and M. Stutzmann
pp. 13561-13572 [View PDF (183 kB)]
•
Substitutional carbon in Si1-xGex
L. Hoffmann, B. Bech Nielsen, A. Nylandsted Larsen, P. Leary, R. Jones, P. R. Briddon, and S. Öberg
pp. 13573-13581 [View PDF (121 kB)]
•
Particle and energy fluxes in semiconductors: Full-band hydrodynamic equations and the thermodynamic limit
S. Taschini, M. Rudan, and R. Brunetti
pp. 13582-13591 [View PDF (126 kB)]

Semiconductors II: surfaces, interfaces, microstructures, and related topics

•
Size changes of n×n stacking-fault half units of dimer–adatom–stacking-fault structures on quenched Si(111) surfaces
T. Ishimaru, K. Shimada, T. Hoshino, T. Yamawaki, and I. Ohdomari
pp. 13592-13597 [View PDF (589 kB)]
•
Interface-layer formation mechanism in a-Si:H thin-film growth studied by real-time spectroscopic ellipsometry and infrared spectroscopy
H. Fujiwara, Y. Toyoshima, M. Kondo, and A. Matsuda
pp. 13598-13604 [View PDF (122 kB)]
•
Local structures and interface morphology of InxGa1-xAs1-yNy thin films grown on GaAs
Y. L. Soo, S. Huang, Y. H. Kao, J. G. Chen, S. L. Hulbert, J. F. Geisz, Sarah Kurtz, J. M. Olson, Steven R. Kurtz, E. D. Jones, and A. A. Allerman
pp. 13605-13611 [View PDF (84 kB)]
•
Atomic-resolution study of lattice distortions of buried InxGa1-xAs monolayers in GaAs(001)
T.-L. Lee, M. R. Pillai, J. C. Woicik, G. Labanda, P. F. Lyman, S. A. Barnett, and M. J. Bedzyk
pp. 13612-13618 [View PDF (301 kB)]
•
Characterizing composition modulations in InAs/AlAs short-period superlattices
R. D. Twesten, D. M. Follstaedt, S. R. Lee, E. D. Jones, J. L. Reno, J. Mirecki Millunchick, A. G. Norman, S. P. Ahrenkiel, and A. Mascarenhas
pp. 13619-13635 [View PDF (2,006 kB)]
•
Electronic structure in space-charge layers of narrow-gap semiconductors in the presence of strong magnetic fields
Saadi Lamari
pp. 13636-13647 [View PDF (161 kB)]
•
Semiclassical approach to the density of states of the disordered electron gas in a quantum wire
Doan Nhat Quang and Nguyen Huyen Tung
pp. 13648-13658 [View PDF (157 kB)]
•
Ordered Hamiltonian and matching conditions for heterojunctions with wurtzite symmetry: GaN/AlxGa1-xN quantum wells
Francisco Mireles and Sergio E. Ulloa
pp. 13659-13667 [View PDF (129 kB)]
•
Quantum waveguide theory: A direct solution to the time-dependent Schrödinger equation
J. B. Wang and S. Midgley
pp. 13668-13675 [View PDF (677 kB)]
•
Magnetoprobing of the discrete level spectrum of open quantum dots
J. P. Bird, R. Akis, and D. K. Ferry
pp. 13676-13681 [View PDF (445 kB)]
•
Coulomb-blockade conductance-peak-height fluctuations in quantum dots and the independent-particle model
Raúl O. Vallejos, Caio H. Lewenkopf, and Eduardo R. Mucciolo
pp. 13682-13694 [View PDF (228 kB)]
•
Doubly resonant terahertz sideband generation in quantum wells: Optical signatures of terahertz-dressed subbands
D. S. Citrin
pp. 13695-13701 [View PDF (128 kB)]
•
Hamiltonian description of composite fermions: Magnetoexciton dispersions
Ganpathy Murthy
pp. 13702-13719 [View PDF (248 kB)]
•
Capacitive energies of quantum dots with hydrogenic impurity
In-Ho Lee, Kang-Hun Ahn, Yong-Hoon Kim, Richard M. Martin, and Jean-Pierre Leburton
pp. 13720-13726 [View PDF (105 kB)]
•
Sharp luminescent lines from single three-dimensionally confined GaAs/AlAs structures grown on a patterned GaAs substrate
Jun-ichi Kasai, Sigehisa Tanaka, Katsuhiko Higuchi, and Yoshifumi Katayama
pp. 13727-13734 [View PDF (150 kB)]
•
Effect of the insertion of an ultrathin AlP layer on the optical properties of GaAsP/GaP quantum wells
K. Arimoto, T. Sugita, N. Usami, and Y. Shiraki
pp. 13735-13739 [View PDF (115 kB)]
•
Electron and hole relaxation pathways in semiconductor quantum dots
V. I. Klimov, D. W. McBranch, C. A. Leatherdale, and M. G. Bawendi
pp. 13740-13749 [View PDF (189 kB)]
•
Lattice strain and static disorder determination in Si/Si1-xGex/Si heterostructures by convergent beam electron diffraction
Stefano Frabboni, Francesca Gambetta, Aldo Armigliato, Roberto Balboni, Simone Balboni, and Franco Cembali
pp. 13750-13761 [View PDF (669 kB)]
•
Conductance enhancement in quantum-point-contact semiconductor-superconductor devices
Niels Asger Mortensen, Antti-Pekka Jauho, Karsten Flensberg, and Henning Schomerus
pp. 13762-13769 [View PDF (377 kB)]
•
Transport properties of double quantum wires in a magnetic field
S. V. Korepov and M. A. Liberman
pp. 13770-13775 [View PDF (93 kB)]
•
Spin-resolved commensurability oscillations
J. P. Lu, M. Shayegan, L. Wissinger, U. Rössler, and R. Winkler
pp. 13776-13779 [View PDF (270 kB)]

Surface physics, low-dimensional systems, and related topics

•
X-ray study of strains and dislocation density in epitaxial Cu/Ni/Cu/Si(001) films
K. Ha, M. Ciria, R. C. O’Handley, P. W. Stephens, and S. Pagola
pp. 13780-13785 [View PDF (204 kB)]
•
Molecular dynamics of carbon nanotubule proximal probe tip-surface contacts
Ajay Garg and Susan B. Sinnott
pp. 13786-13791 [View PDF (95 kB)]
•
Molecular dynamics simulation of crystal dissolution from calcite steps
N. H. de Leeuw, S. C. Parker, and J. H. Harding
pp. 13792-13799 [View PDF (386 kB)]
•
Vibrons in a disordered monolayer: Application to the determination of the infrared and sum frequency generation spectra of 12CO and 13CO isotopic mixtures adsorbed on NaCl(001)
V. Pouthier and C. Girardet
pp. 13800-13813 [View PDF (236 kB)]
•
Friedel phases and phases of transmission amplitudes in quantum scattering systems
Tooru Taniguchi and Markus Büttiker
pp. 13814-13823 [View PDF (132 kB)]
•
Electrical and mechanical properties of distorted carbon nanotubes
Alain Rochefort, Phaedon Avouris, Frédéric Lesage, and Dennis R. Salahub
pp. 13824-13830 [View PDF (205 kB)]
•
Electron energy loss in ordered arrays of polarizable spheres
Carlos I. Mendoza, Rubén G. Barrera, and Ronald Fuchs
pp. 13831-13845 [View PDF (238 kB)]
•
Electron- and photon-stimulated modification of GaAs(110), Si(100), and Si(111)
B. Y. Han, Koji Nakayama, and J. H. Weaver
pp. 13846-13853 [View PDF (1,043 kB)]
•
Effects of potential energy on sputtering of F+ from the CaF2(111) surface by noble-gas ion bombardment
R. Souda, T. Suzuki, E. Asari, and H. Kawanowa
pp. 13854-13859 [View PDF (94 kB)]
•
Relationship between magnetic circular and linear dichroism in photoemission from Fe 3p core level: An experimental and theoretical investigation
J. Bansmann, L. Lu, K. H. Meiwes-Broer, T. Schlathölter, and J. Braun
pp. 13860-13868 [View PDF (887 kB)]
•
Magic islands and barriers to attachment: A Si/Si(111)7×7 growth model
J. Mysliveček, T. Jarolímek, P. Šmilauer, B. Voigtländer, and M. Kästner
pp. 13869-13873 [View PDF (252 kB)]
•
Band-gap change of carbon nanotubes: Effect of small uniaxial and torsional strain
Liu Yang, M. P. Anantram, Jie Han, and J. P. Lu
pp. 13874-13878 [View PDF (116 kB)]
•
Thermal-strain-induced splitting of heavy- and light-hole exciton energies in CuI thin films grown by vacuum evaporation
D. Kim, M. Nakayama, O. Kojima, I. Tanaka, H. Ichida, T. Nakanishi, and H. Nishimura
pp. 13879-13884 [View PDF (94 kB)]
•
Self-inductance of chiral conducting nanotubes
Yoshiyuki Miyamoto, Angel Rubio, Steven G. Louie, and Marvin L. Cohen
pp. 13885-13889 [View PDF (67 kB)]
•
Layer-by-layer versus surfactant dissolution modes in heteroepitaxy
Jean-Marc Roussel, Andrés Saúl, Guy Tréglia, and Bernard Legrand
pp. 13890-13901 [View PDF (293 kB)]

COMMENTS

•
Comment on “Energy transfer and upconversions in cubic Cs2NaYCl6:Er+3 and Cs2NaErCl6”
P. A. Tanner, M. Chua, W.-M. Kwok, and D. L. Phillips
pp. 13902-13904 [View PDF (45 kB)]
•
Comment on “Structural model for the Si(001)4×3-In surface phase”
O. Bunk, G. Falkenberg, J. H. Zeysing, R. L. Johnson, M. Nielsen, and R. Feidenhans’l
pp. 13905-13906 [View PDF (129 kB)]
 
< Previous Issue | Next Issue >