Physical Review B
– 15 March 2000
Volume 61, Issue 11
BRIEF REPORTS
Electronic structure: wide-band, narrow-band, and strongly correlated systems
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Ballistic-electron-emission microscopy of conduction-electron surface states
M. K. Weilmeier, W. H. Rippard, and R. A. Buhrman
pp.
7161-7164
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Direct visualization of photonic band structure for three-dimensional photonic crystals
M. Notomi, T. Tamamura, Y. Ohtera, O. Hanaizumi, and S. Kawakami
pp.
7165-7168
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Magnetic circular dichroism in the 2p4d x-ray emission of EuO
C. Wittkop, W. Schülke, and F. M. F. de Groot
pp.
7176-7179
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Multiatom resonant photoemission observed via secondary processes: Auger decay and x-ray fluorescence
E. Arenholz, A. W. Kay, C. S. Fadley, M. M. Grush, T. A. Callcott, D. L. Ederer, C. Heske, and Z. Hussain
pp.
7183-7186
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Semiconductors I: bulk
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Tight-binding total-energy method applied to polyacetylene
Diana E. Tuyarot, Belita Koiller, and R. B. Capaz
pp.
7187-7190
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Electric-field-assisted migration and accumulation of hydrogen in silicon carbide
M. S. Janson, A. Hallén, M. K. Linnarsson, B. G. Svensson, N. Nordell, and S. Karlsson
pp.
7195-7198
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Metastability of the phosphorus antisite defect in low-temperature InP
J. Mikucki, M. Baj, D. Wasik, W. Walukiewicz, W. G. Bi, and C. W. Tu
pp.
7199-7202
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Dynamics of anomalous optical transitions in AlxGa1-xN alloys
Yong-Hoon Cho, G. H. Gainer, J. B. Lam, J. J. Song, W. Yang, and W. Jhe
pp.
7203-7206
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Semiconductors II: surfaces, interfaces, microstructures, and related topics
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Spontaneous polarization effects in GaN/AlxGa1-xN quantum wells
J. Simon, R. Langer, A. Barski, and N. T. Pelekanos
pp.
7211-7214
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Interaction of Se and GaSe with Si(111)
Shuang Meng, B. R. Schroeder, and Marjorie A. Olmstead
pp.
7215-7218
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In-plane propagation of excitonic cavity polaritons
T. Freixanet, B. Sermage, A. Tiberj, and R. Planel
pp.
7233-7236
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Spin splitting in pseudomorphic InxGa1-xAs/InyAl1-yAs graded heterostructures
Y. S. Gui, C. M. Hu, Z. H. Chen, G. Z. Zheng, S. L. Guo, J. H. Chu, J. X. Chen, and A. Z. Li
pp.
7237-7240
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Spin instabilities in semiconductor superlattices
D. C. Marinescu, J. J. Quinn, and Gabriele F. Giuliani
pp.
7245-7248
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Coulomb blockade in low-mobility nanometer size Si MOSFET’s
M. Sanquer, M. Specht, L. Ghenim, S. Deleonibus, and G. Guegan
pp.
7249-7252
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Surface physics, low-dimensional systems, and related topics
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Interband effect in the optical response of strontium clusters
C. Bréchignac, Ph. Cahuzac, N. Kébaïli, J. Leygnier, and H. Yoshida
pp.
7280-7283
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Microscopic surface structure of liquid alkali metals
H. Tostmann, E. DiMasi, P. S. Pershan, B. M. Ocko, O. G. Shpyrko, and M. Deutsch
pp.
7284-7287
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Helium mixtures in nanotube bundles
George Stan, Jacob M. Hartman, Vincent H. Crespi, Silvina M. Gatica, and Milton W. Cole
pp.
7288-7290
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Scanning tunneling microscopy and spectroscopy of S on Pd(111)
S. Speller, T. Rauch, A. Postnikov, and W. Heiland
pp.
7297-7300
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Improvement in electrical and dielectric behavior of (Ba,Sr)TiO3 thin films by Ag doping
Anuranjan Srivastava, D. Kumar, Rajiv K. Singh, Harish Venkataraman, and William R. Eisenstadt
pp.
7305-7307
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Geometrical perturbation of graphene electronic structure
Paul E. Lammert and Vincent H. Crespi
pp.
7308-7311
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Spectroscopic study of the tunnel-current reduction due to adsorbed helium
R. J. P. Keijsers, O. I. Shklyarevskii, and H. van Kempen
pp.
7328-7331
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ARTICLES
Electronic structure: wide-band, narrow-band, and strongly correlated systems
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Weak-localization effect on thermomagnetic phenomena
Michael Reizer and Andrew Sergeev
pp.
7340-7347
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Renormalization-group analysis of the two-dimensional Hubbard model
Christoph J. Halboth and Walter Metzner
pp.
7364-7377
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Two-dimensional Fermi liquid with fixed chemical potential
J. Wosnitza, S. Wanka, J. Hagel, E. Balthes, N. Harrison, J. A. Schlueter, A. M. Kini, U. Geiser, J. Mohtasham, R. W. Winter, and G. L. Gard
pp.
7383-7387
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Fermi-surface study of Ba1-xKxBiO3
S. Sahrakorpi, B. Barbiellini, R. S. Markiewicz, S. Kaprzyk, M. Lindroos, and A. Bansil
pp.
7388-7394
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Anomalous transmission in a hierarchical lattice
Anirban Chakraborti, Bibhas Bhattacharyya, and Arunava Chakrabarti
pp.
7395-7401
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Charge dynamics in doped triangular antiferromagnets
W. Q. Yu, Shiping Feng, Z. B. Huang, and H. Q. Lin
pp.
7409-7414
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Optical properties of itinerant UGa3: Ellipsometric measurements and first-principles theory
J. Schoenes, U. Barkow, M. Broschwitz, P. M. Oppeneer, D. Kaczorowski, and A. Czopnik
pp.
7415-7420
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Local atomic structure of CdTe:In at high In concentrations
F. J. Espinosa, J. Mustre de Leon, S. D. Conradson, J. L. Peña, and M. Zapata-Torres
pp.
7428-7432
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Resonant emission spectra of YF3, YCl3, Y2O3 and Y-metal in the Y LIII absorption region
S. Nakai, Y. Megawa, F. Terasaki, Chen Gang, T. Ohuchi, K. Obara, T. Kojima, H. Arai, T. Kashiwakura, and Y. Kitajima
pp.
7433-7439
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Semiconductors I: bulk
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Hydrogen passivation of the selenium double donor in silicon: A study by magnetic resonance
P. T. Huy, C. A. J. Ammerlaan, T. Gregorkiewicz, and D. T. Don
pp.
7448-7458
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Electronic and optical properties of anatase TiO2
R. Asahi, Y. Taga, W. Mannstadt, and A. J. Freeman
pp.
7459-7465
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Comparative study of hole transport in poly(p-phenylene vinylene) derivatives
H. C. F. Martens, P. W. M. Blom, and H. F. M. Schoo
pp.
7489-7493
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Mg-O and Mg-VN defect complexes in cubic GaN
I. Gorczyca, A. Svane, and N. E. Christensen
pp.
7494-7498
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Semiconductors II: surfaces, interfaces, microstructures, and related topics
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Electric-field-induced combination of Wannier-Stark localization and type-I–type-II crossover in a marginal type-I GaAs/AlAs superlattice
Naoki Ohtani, Chiaki Domoto, Norifumi Egami, Hidenori Mimura, Masanobu Ando, Masaaki Nakayama, and Makoto Hosoda
pp.
7505-7510
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Coulomb drag between parallel ballistic quantum wires
O. Raichev and P. Vasilopoulos
pp.
7511-7516
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Magnetoresistance fluctuations in short n-type Si/SiGe heterostructure wires
R. G. van Veen, A. H. Verbruggen, E. van der Drift, F. Schäffler, and S. Radelaar
pp.
7545-7552
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Edge theories for polarized quantum Hall states
T. H. Hansson and S. Viefers
pp.
7553-7563
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Linear and nonlinear optical properties of InxGa1-xN/GaN heterostructures
Yong-Hoon Cho, T. J. Schmidt, S. Bidnyk, G. H. Gainer, J. J. Song, S. Keller, U. K. Mishra, and S. P. DenBaars
pp.
7571-7588
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Contrasting photovoltaic response and photoluminescence for distinct porous silicon pore structures
James L. Gole, Julie A. DeVincentis, Lenward Seals, Peter Lillehei, and Shreesh Narasimha
pp.
7589-7594
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Step-induced optical anisotropy of Si(111):H surfaces
W. G. Schmidt and J. Bernholc
pp.
7604-7608
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Investigation of single boron acceptors at the cleaved Si:B(111) surface
Maya Schöck, Christoph Sürgers, and Hilbert v. Löhneysen
pp.
7622-7627
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Surface physics, low-dimensional systems, and related topics
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Coherent control of photocurrents in graphene and carbon nanotubes
E. J. Mele, Petr Král, and David Tománek
pp.
7669-7677
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Medium-energy ion scattering structural study of the Ni(111)(√3×√3)R30°-Pb surface phase
D. Brown, P. D. Quinn, D. P. Woodruff, P. Bailey, and T. C. Q. Noakes
pp.
7706-7715
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Numerical modeling of the optical response of supported metallic particles
Ingve Simonsen, Rémi Lazzari, Jacques Jupille, and Stéphane Roux
pp.
7722-7733
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Second-order resonant Raman spectra of single-walled carbon nanotubes
S. D. M. Brown, P. Corio, A. Marucci, M. A. Pimenta, M. S. Dresselhaus, and G. Dresselhaus
pp.
7734-7742
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Causal trajectories description of atom diffraction by surfaces
A. S. Sanz, F. Borondo, and S. Miret-Artés
pp.
7743-7751
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Formation of a surface graphite monolayer and intercalationlike compound in the La/graphite system under thermal annealing
A. M. Shikin, V. K. Adamchuk, S. Siebentritt, K.-H. Rieder, S. L. Molodtsov, and C. Laubschat
pp.
7752-7759
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Friction of ice measured using lateral force microscopy
Hendrik Bluhm, Takahito Inoue, and Miquel Salmeron
pp.
7760-7765
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Electron-phonon interaction in C70
D. Provasi, N. Breda, R. A. Broglia, G. Colò, H. E. Roman, and G. Onida
pp.
7775-7780
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spd tight-binding model of magnetism in transition metals: Application to Rh and Pd clusters and slabs
C. Barreteau, R. Guirado-López, D. Spanjaard, M. C. Desjonquères, and Andrzej M. Oleś
pp.
7781-7794
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