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PROLA » Phys. Rev. B » Volume 61 » Issue 12
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Physical Review B – 15 March 2000
Volume 61, Issue 12

RAPID COMMUNICATIONS

Electronic structure: wide-band, narrow-band, and strongly correlated systems

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Electronic structure of double-perovskite transition-metal oxides
Y. Moritomo, Sh. Xu, A. Machida, T. Akimoto, E. Nishibori, M. Takata, and M. Sakata
pp. R7827-R7830 [View PDF (70 kB)]
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Orbitally driven spin pairing in the three-dimensional nonmagnetic Mott insulator BaVS3: Evidence from single-crystal studies
G. Mihály, I. Kézsmárki, F. Zámborszky, M. Miljak, K. Penc, P. Fazekas, H. Berger, and L. Forró
pp. R7831-R7834 [View PDF (176 kB)]
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Electronic four-particle correlations in semiconductors: Renormalization of coherent pump-probe oscillations
U. Neukirch, S. R. Bolton, L. J. Sham, and D. S. Chemla
pp. R7835-R7837 [View PDF (144 kB)]
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Calculated temperature-dependent resistance in low-density two-dimensional hole gases in GaAs heterostructures
S. Das Sarma and E. H. Hwang
pp. R7838-R7841 [View PDF (52 kB)]
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Extraordinary Hall effect in SrRuO3
L. Klein, J. R. Reiner, T. H. Geballe, M. R. Beasley, and A. Kapitulnik
pp. R7842-R7845 [View PDF (60 kB)]

Semiconductors I: bulk

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Native defects and impurities in InN: First-principles studies using the local-density approximation and self-interaction and relaxation-corrected pseudopotentials
C. Stampfl, C. G. Van de Walle, D. Vogel, P. Krüger, and J. Pollmann
pp. R7846-R7849 [View PDF (57 kB)]

Semiconductors II: surfaces, interfaces, microstructures, and related topics

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Masses of composite fermions carrying two and four flux quanta: Differences and similarities
Xiaomin Zu, Kwon Park, and Jainendra K. Jain
pp. R7850-R7853 [View PDF (54 kB)]
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Experimental evidence of stimulated scattering of excitons into microcavity polaritons
R. Huang, F. Tassone, and Y. Yamamoto
pp. R7854-R7857 [View PDF (126 kB)]
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Hysteresis effect due to the exchange Coulomb interaction in short-period superlattices in tilted magnetic fields
Andrei Manolescu and Vidar Gudmundsson
pp. R7858-R7860 [View PDF (49 kB)]
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Evolution of GaAs1-xNx conduction states and giant Au/GaAs1-xNx Schottky barrier reduction studied by ballistic electron emission spectroscopy
M. Kozhevnikov, V. Narayanamurti, C. V. Reddy, H. P. Xin, C. W. Tu, A. Mascarenhas, and Y. Zhang
pp. R7861-R7864 [View PDF (56 kB)]
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Tuning of dynamic localization in coupled minibands: Signatures of a field-induced metal-insulator transition
P. H. Rivera and P. A. Schulz
pp. R7865-R7868 [View PDF (138 kB)]
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Possible mechanism of the fractional-conductance quantization in a one-dimensional constriction
V. V. Flambaum and M. Yu. Kuchiev
pp. R7869-R7872 [View PDF (46 kB)]

Surface physics, low-dimensional systems, and related topics

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Probing the polarity of ferroelectric thin films with x-ray standing waves
M. J. Bedzyk, A. Kazimirov, D. L. Marasco, T.-L. Lee, C. M. Foster, G.-R. Bai, P. F. Lyman, and D. T. Keane
pp. R7873-R7876 [View PDF (71 kB)]

ARTICLES

Electronic structure: wide-band, narrow-band, and strongly correlated systems

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Virtual crystal approximation revisited: Application to dielectric and piezoelectric properties of perovskites
L. Bellaiche and David Vanderbilt
pp. 7877-7882 [View PDF (74 kB)]

BRIEF REPORTS

Electronic structure: wide-band, narrow-band, and strongly correlated systems

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Phase diagrams from topological transitions: The Hubbard chain with correlated hopping
A. A. Aligia, K. Hallberg, C. D. Batista, and G. Ortiz
pp. 7883-7886 [View PDF (79 kB)]

ARTICLES

Electronic structure: wide-band, narrow-band, and strongly correlated systems

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Many-body theory versus simulations for the pseudogap in the Hubbard model
S. Moukouri, S. Allen, F. Lemay, B. Kyung, D. Poulin, Y. M. Vilk, and A.-M. S. Tremblay
pp. 7887-7892 [View PDF (106 kB)]
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Metal-insulator transition in a doubly orbitally degenerate model with correlated hopping
L. Didukh, Yu. Skorenkyy, Yu. Dovhopyaty, and V. Hankevych
pp. 7893-7908 [View PDF (208 kB)]
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Crossover to Fermi-liquid behavior for weakly coupled Luttinger liquids in the anisotropic large-dimension limit
E. Arrigoni
pp. 7909-7929 [View PDF (392 kB)]
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Bounded Luttinger liquids as a universality class of quantum critical behavior
Johannes Voit, Yupeng Wang, and Marco Grioni
pp. 7930-7940 [View PDF (134 kB)]
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Metal-insulator transition with infinite-range Coulomb coupling: Fractional statistics and quantum critical properties
C. Vitoriano, L. B. Bejan, A. M. S. Macêdo, and M. D. Coutinho-Filho
pp. 7941-7952 [View PDF (321 kB)]
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Convergent method for calculating the properties of many interacting electrons
Roger Haydock
pp. 7953-7964 [View PDF (123 kB)]
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Accurate and transferable extended Hückel-type tight-binding parameters
J. Cerdá and F. Soria
pp. 7965-7971 [View PDF (134 kB)]
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Block bond-order potential as a convergent moments-based method
T. Ozaki, M. Aoki, and D. G. Pettifor
pp. 7972-7988 [View PDF (307 kB)]
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Electronic structure of magnetic ternary alkali metal–manganese hydrides
Emilio Orgaz
pp. 7989-7995 [View PDF (141 kB)]
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Transport properties of strongly correlated metals: A dynamical mean-field approach
Jaime Merino and Ross H. McKenzie
pp. 7996-8008 [View PDF (165 kB)]
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Low-temperature properties of La1-xCaxMnO3 single crystals: Comparison with La1-xSrxMnO3
T. Okuda, Y. Tomioka, A. Asamitsu, and Y. Tokura
pp. 8009-8015 [View PDF (265 kB)]
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Lattice polaron formation: Effects of nonscreened electron-phonon interaction
H. Fehske, J. Loos, and G. Wellein
pp. 8016-8025 [View PDF (162 kB)]
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Two-dimensional electron gas in the random-phase approximation with exchange and self-energy corrections
H.-J. Schulze, P. Schuck, and N. Van Giai
pp. 8026-8032 [View PDF (122 kB)]
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Plasmonic excitations in noble metals: The case of Ag
M. A. Cazalilla, J. S. Dolado, A. Rubio, and P. M. Echenique
pp. 8033-8042 [View PDF (210 kB)]
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Combined excitation-emission spectroscopy of Er3+ ions in stoichiometric LiNbO3: The site selectivity of direct and up conversion excitation processes
V. Dierolf and M. Koerdt
pp. 8043-8052 [View PDF (735 kB)]
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Static dielectric behavior of dipolar glasses
J. M. B. Lopes dos Santos, M. L. Santos, M. R. Chaves, A. Almeida, and A. Klöpperpieper
pp. 8053-8061 [View PDF (230 kB)]
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Low-energy valence photoemission in Ce compounds: Beyond the Anderson impurity model
J. D. Lee
pp. 8062-8072 [View PDF (176 kB)]
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Spectroscopic studies of Eu3+ and Dy3+ centers in ThO2
M. Yin, J-C. Krupa, E. Antic-Fidancev, and A. Lorriaux-Rubbens
pp. 8073-8080 [View PDF (107 kB)]
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Tunneling process in thermally stimulated luminescence of mixed LuxY1-xAlO3:Ce crystals
A. Vedda, M. Martini, F. Meinardi, J. Chval, M. Dusek, J. A. Mares, E. Mihokova, and M. Nikl
pp. 8081-8086 [View PDF (96 kB)]
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Emission dynamics of the 4F3/2 level of Nd3+ in YAG at low pump intensities
V. Lupei and A. Lupei
pp. 8087-8098 [View PDF (147 kB)]
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Scattering of electromagnetic waves by nearly periodic structures
A. Modinos, V. Yannopapas, and N. Stefanou
pp. 8099-8107 [View PDF (184 kB)]
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Non-Ohmic hopping transport in a-YSi: From isotropic to directed percolation
F. Ladieu, D. L’Hôte, and R. Tourbot
pp. 8108-8118 [View PDF (279 kB)]
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Delocalization and new phase in americium: Density-functional electronic structure calculations
Per Söderlind, R. Ahuja, O. Eriksson, B. Johansson, and J. M. Wills
pp. 8119-8124 [View PDF (75 kB)]
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Distribution functions and current-current correlations in normal-metal–superconductor heterostructures
Thomas Gramespacher and Markus Büttiker
pp. 8125-8132 [View PDF (110 kB)]
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Midinfrared Hall effect in thin-film metals: Probing the Fermi surface anisotropy in Au and Cu
J. Černe, D. C. Schmadel, M. Grayson, G. S. Jenkins, J. R. Simpson, and H. D. Drew
pp. 8133-8140 [View PDF (119 kB)]
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Spectroscopic properties of photorefractive BaTiO3 double doped with cerium and rhodium
Robert N. Schwartz and Barry A. Wechsler
pp. 8141-8149 [View PDF (133 kB)]

Semiconductors I: bulk

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Role of the bond defect for structural transformations between crystalline and amorphous silicon: A molecular-dynamics study
D. M. Stock, B. Weber, and K. Gärtner
pp. 8150-8154 [View PDF (152 kB)]
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First-principles calculations of interstitial boron in silicon
M. Hakala, M. J. Puska, and R. M. Nieminen
pp. 8155-8161 [View PDF (78 kB)]
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Electronic structure and transport of Bi2Te3 and BaBiTe3
P. Larson, S. D. Mahanti, and M. G. Kanatzidis
pp. 8162-8171 [View PDF (186 kB)]
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Femtosecond study of exciton dynamics in 9,9-di-n-hexylfluorene/anthracene random copolymers
M. A. Kreger, N. J. Cherepy, J. Z. Zhang, J. C. Scott, G. Klaerner, R. D. Miller, D. W. McBranch, B. Kraabel, and S. Xu
pp. 8172-8179 [View PDF (107 kB)]
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Structure, kinetics, and vibrational properties of complexes formed by hydrogen and gallium vacancies in GaAs: A theoretical study
A. Amore Bonapasta and M. Capizzi
pp. 8180-8186 [View PDF (106 kB)]
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Infrared dielectric anisotropy and phonon modes of sapphire
M. Schubert, T. E. Tiwald, and C. M. Herzinger
pp. 8187-8201 [View PDF (287 kB)]
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Localized vibrational modes in GaN:O tracing the formation of oxygen DX-like centers under hydrostatic pressure
C. Wetzel, H. Amano, I. Akasaki, J. W. Ager, III, I. Grzegory, M. Topf, and B. K. Meyer
pp. 8202-8206 [View PDF (83 kB)]
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Ultrafast on-chain dissociation of hot excitons in conjugated polymers
V. I. Arkhipov, E. V. Emelianova, S. Barth, and H. Bässler
pp. 8207-8214 [View PDF (116 kB)]
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Two-body decay of thermalized excitons in Cu2O
J. T. Warren, K. E. O’Hara, and J. P. Wolfe
pp. 8215-8223 [View PDF (242 kB)]
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Mechanical effect on the electronic properties of molecular wires
Mikrajuddin, K. Okuyama, and F. G. Shi
pp. 8224-8232 [View PDF (340 kB)]
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Laser-induced melting of silicon: A tight-binding molecular dynamics simulation
A. Gambirasio, M. Bernasconi, and L. Colombo
pp. 8233-8237 [View PDF (119 kB)]
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Infrared spectroscopy of Mg-H local vibrational mode in GaN with polarized light
B. Clerjaud, D. Côte, A. Lebkiri, C. Naud, J. M. Baranowski, K. Pakula, D. Wasik, and T. Suski
pp. 8238-8241 [View PDF (90 kB)]
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Theoretical analysis of energy-dependent hot-electron transport in a magnetic multilayer
Takashi Yamauchi and Koichi Mizushima
pp. 8242-8249 [View PDF (108 kB)]

Semiconductors II: surfaces, interfaces, microstructures, and related topics

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Electronic and vibrational properties of initial-stage oxidation products on Si(111)-(7×7)
Sung-Hoon Lee and Myung-Ho Kang
pp. 8250-8255 [View PDF (358 kB)]
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Tellurium desorption kinetics from (112) Si: Si-Te binding energy
N. K. Dhar, N. Goldsman, and C. E. C. Wood
pp. 8256-8261 [View PDF (121 kB)]
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Effect of oxygen on transient photoconductivity in thin-film NbxTi1-xO2
Nickolay Golego, S. A. Studenikin, and Michael Cocivera
pp. 8262-8269 [View PDF (248 kB)]
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Evidence for strain in and around InAs quantum dots in GaAs from ion-channeling experiments
L. J. M. Selen, L. J. van IJzendoorn, M. J. A. de Voigt, and P. M. Koenraad
pp. 8270-8275 [View PDF (343 kB)]
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Structural and chemical investigation of In0.6Ga0.4As Stranski-Krastanow layers buried in GaAs by transmission electron microscopy
A. Rosenauer, W. Oberst, D. Litvinov, D. Gerthsen, A. Förster, and R. Schmidt
pp. 8276-8288 [View PDF (861 kB)]
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Wave-vector dependence of spin and density multipole excitations in quantum dots
Manuel Barranco, Leonardo Colletti, Enrico Lipparini, Agustí Emperador, Martí Pi, and Llorenç Serra
pp. 8289-8297 [View PDF (162 kB)]
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Electronic structure of silicon nanowires: A photoemission and x-ray absorption study
Y. F. Zhang, L. S. Liao, W. H. Chan, S. T. Lee, R. Sammynaiken, and T. K. Sham
pp. 8298-8305 [View PDF (298 kB)]
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Strain effect in a GaAs-In0.25Ga0.75As-Al0.5Ga0.5As asymmetric quantum wire
Y. Fu, M. Willander, W. Lu, X. Q. Liu, S. C. Shen, C. Jagadish, M. Gal, J. Zou, and D. J. H. Cockayne
pp. 8306-8311 [View PDF (100 kB)]
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Time-dependent current oscillations through a quantum dot
E. S. Rodrigues, E. V. Anda, and P. Orellana
pp. 8312-8315 [View PDF (69 kB)]
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Nonlinear interlayer tunneling in a double-electron-layer structure
S. K. Lyo
pp. 8316-8325 [View PDF (151 kB)]
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Short-range interactions and scaling near integer quantum Hall transitions
Ziqiang Wang, Matthew P. A. Fisher, S. M. Girvin, and J. T. Chalker
pp. 8326-8333 [View PDF (103 kB)]
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Surfactant-mediated growth of ultrathin Ge and Si films and their interfaces: Interference-enhanced Raman study
S. Kanakaraju, A. K. Sood, and S. Mohan
pp. 8334-8340 [View PDF (103 kB)]
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Green’s function approach to the dynamics-controlled truncation formalism: Derivation of the χ(3) equations of motion
N. H. Kwong and R. Binder
pp. 8341-8358 [View PDF (277 kB)]
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Intensity dependence of the Fermi edge singularity in photoluminescence from modulation-doped AlxGa1-xAs/InyGa1-yAs/GaAs heterostructures
H. Kissel, U. Müller, C. Walther, W. T. Masselink, Yu. I. Mazur, G. G. Tarasov, G. Yu. Rud’ko, M. Ya. Valakh, V. Malyarchuk, and Z. Ya. Zhuchenko
pp. 8359-8362 [View PDF (59 kB)]
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Optical properties of biexcitons in ZnS
Yoichi Yamada, Takashi Sakashita, Hidefumi Watanabe, Hideyuki Kugimiya, Seiji Nakamura, and Tsunemasa Taguchi
pp. 8363-8368 [View PDF (140 kB)]
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Far-infrared emission and Stark-cyclotron resonances in a quantum-cascade structure based on photon-assisted tunneling transition
Stéphane Blaser, Michel Rochat, Mattias Beck, Jérôme Faist, and Ursula Oesterle
pp. 8369-8374 [View PDF (245 kB)]
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Optical properties of imperfect strained-layer InAs/Ga1-xInxSb/AlSb superlattices with infrared applications
M. R. Kitchin, M. J. Shaw, E. Corbin, J. P. Hagon, and M. Jaros
pp. 8375-8381 [View PDF (108 kB)]
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Temperature-dependent linewidth of single InP/GaxIn1-xP quantum dots: Interaction with surrounding charge configurations
P. G. Blome, M. Wenderoth, M. Hübner, R. G. Ulbrich, J. Porsche, and F. Scholz
pp. 8382-8387 [View PDF (402 kB)]
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Sinusoidally modulated ZnSexTe1-x superlattices: Fabrication and structural studies
P. M. Reimer, John R. Buschert, S. Lee, and J. K. Furdyna
pp. 8388-8392 [View PDF (72 kB)]
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Dissociation kinetics of hydrogen-passivated Pb defects at the (111)Si/SiO2 interface
A. Stesmans
pp. 8393-8403 [View PDF (154 kB)]
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Laser-excited intershell rotation of finite Coulomb clusters in a dusty plasma
M. Klindworth, A. Melzer, A. Piel, and V. A. Schweigert
pp. 8404-8410 [View PDF (324 kB)]
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Bose-Einstein condensation of excitons in a single quantum well
Z. G. Koinov
pp. 8411-8419 [View PDF (130 kB)]
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Phase diagram of a two-dimensional liquid in GaAs/AlxGa1-xAs biased double quantum wells
V. B. Timofeev, A. V. Larionov, M. Grassi-Alessi, M. Capizzi, and J. M. Hvam
pp. 8420-8424 [View PDF (96 kB)]

Surface physics, low-dimensional systems, and related topics

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Dynamics of hydrogen dissociation at the sulfur-covered Pd(100) surface
Axel Groß and Matthias Scheffler
pp. 8425-8432 [View PDF (98 kB)]
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Theory and applications of the stress density
Alessio Filippetti and Vincenzo Fiorentini
pp. 8433-8442 [View PDF (127 kB)]
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Formation of a palladium-silicon interface by silane chemical vapor deposition on Pd(100)
C. J. Ennis, D. J. Spence, S. P. Tear, and E. M. McCash
pp. 8443-8449 [View PDF (559 kB)]
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X-ray standing-wave investigation of (1×2)Rb/Cu(110)
D. Heskett and L. E. Berman
pp. 8450-8454 [View PDF (280 kB)]
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Comparison of the electronic structure and surface geometry of the metastable Cs+O overlayers on Ru(0001)
Y. D. Kim, Y. J. Zhu, S. Wendt, A. P. Seitsonen, S. Schwegmann, H. Bludau, H. Over, A. Morgante, and K. Christmann
pp. 8455-8461 [View PDF (564 kB)]
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Resonance enhancement of x rays in layered materials: Application to surface enrichment in polymer blends
B. N. Dev, Amal K. Das, S. Dev, D. W. Schubert, M. Stamm, and G. Materlik
pp. 8462-8468 [View PDF (220 kB)]
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Ge deposition on Ag surfaces: Dependence of the adsorption characteristics on the surface orientation
S. Sawaya, J. Goniakowski, and G. Tréglia
pp. 8469-8474 [View PDF (74 kB)]
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Growth of Fe on MgO(001) studied by He-atom scattering
G. Fahsold, A. Pucci, and K.-H. Rieder
pp. 8475-8483 [View PDF (168 kB)]
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Multiple-scattering theory of the surface resistivity of stepped Al surfaces
P. J. Rous
pp. 8484-8488 [View PDF (76 kB)]
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Work-function anisotropy in noble metals: Contributions from d states and effects of the surface atomic structure
C. J. Fall, N. Binggeli, and A. Baldereschi
pp. 8489-8495 [View PDF (635 kB)]
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Superstructure induced by a topological defect in graphitic cones
Katsuyoshi Kobayashi
pp. 8496-8500 [View PDF (316 kB)]
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Unified picture of the photoexcitations in phenylene-based conjugated polymers: Universal spectral and dynamical features in subpicosecond transient absorption
B. Kraabel, V. I. Klimov, R. Kohlman, S. Xu, H-L. Wang, and D. W. McBranch
pp. 8501-8515 [View PDF (291 kB)]
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Trends in sputter yield data in the film deposition regime
John E. Mahan and André Vantomme
pp. 8516-8525 [View PDF (176 kB)]
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Electronic states and surface structure of PdTe2 as probed by scanning tunneling microscopy and photoemission spectroscopy
George W. Ryan and Wayne L. Sheils
pp. 8526-8530 [View PDF (238 kB)]
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Low-temperature adsorption states of benzene on Si(111)7×7 studied by synchrotron-radiation photoemission
M. Carbone, M. N. Piancastelli, M. P. Casaletto, R. Zanoni, G. Comtet, G. Dujardin, and L. Hellner
pp. 8531-8536 [View PDF (90 kB)]
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Molecular-dynamics simulations of solid-phase epitaxy of Si: Growth mechanisms
T. Motooka, K. Nisihira, S. Munetoh, K. Moriguchi, and A. Shintani
pp. 8537-8540 [View PDF (507 kB)]
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Silicon-doped icosahedral, cuboctahedral, and decahedral clusters of aluminum
Vijay Kumar, Satadeep Bhattacharjee, and Yoshiyuki Kawazoe
pp. 8541-8547 [View PDF (291 kB)]
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Relation between transmission rates and the wave functions in carbon nanotube junctions
Ryo Tamura and Masaru Tsukada
pp. 8548-8560 [View PDF (229 kB)]
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Multiple Andreev reflection in single-atom niobium junctions
B. Ludoph, N. van der Post, E. N. Bratus’, E. V. Bezuglyi, V. S. Shumeiko, G. Wendin, and J. M. van Ruitenbeek
pp. 8561-8569 [View PDF (180 kB)]
 
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