Physical Review B
– 15 March 2000
Volume 61, Issue 12
RAPID COMMUNICATIONS
Electronic structure: wide-band, narrow-band, and strongly correlated systems
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Electronic structure of double-perovskite transition-metal oxides
Y. Moritomo, Sh. Xu, A. Machida, T. Akimoto, E. Nishibori, M. Takata, and M. Sakata
pp.
R7827-R7830
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Orbitally driven spin pairing in the three-dimensional nonmagnetic Mott insulator BaVS3: Evidence from single-crystal studies
G. Mihály, I. Kézsmárki, F. Zámborszky, M. Miljak, K. Penc, P. Fazekas, H. Berger, and L. Forró
pp.
R7831-R7834
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PDF (176 kB)]
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Extraordinary Hall effect in SrRuO3
L. Klein, J. R. Reiner, T. H. Geballe, M. R. Beasley, and A. Kapitulnik
pp.
R7842-R7845
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PDF (60 kB)]
Semiconductors I: bulk
Semiconductors II: surfaces, interfaces, microstructures, and related topics
Surface physics, low-dimensional systems, and related topics
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Probing the polarity of ferroelectric thin films with x-ray standing waves
M. J. Bedzyk, A. Kazimirov, D. L. Marasco, T.-L. Lee, C. M. Foster, G.-R. Bai, P. F. Lyman, and D. T. Keane
pp.
R7873-R7876
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ARTICLES
Electronic structure: wide-band, narrow-band, and strongly correlated systems
BRIEF REPORTS
Electronic structure: wide-band, narrow-band, and strongly correlated systems
ARTICLES
Electronic structure: wide-band, narrow-band, and strongly correlated systems
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Many-body theory versus simulations for the pseudogap in the Hubbard model
S. Moukouri, S. Allen, F. Lemay, B. Kyung, D. Poulin, Y. M. Vilk, and A.-M. S. Tremblay
pp.
7887-7892
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Block bond-order potential as a convergent moments-based method
T. Ozaki, M. Aoki, and D. G. Pettifor
pp.
7972-7988
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PDF (307 kB)]
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Plasmonic excitations in noble metals: The case of Ag
M. A. Cazalilla, J. S. Dolado, A. Rubio, and P. M. Echenique
pp.
8033-8042
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PDF (210 kB)]
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Static dielectric behavior of dipolar glasses
J. M. B. Lopes dos Santos, M. L. Santos, M. R. Chaves, A. Almeida, and A. Klöpperpieper
pp.
8053-8061
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Spectroscopic studies of Eu3+ and Dy3+ centers in ThO2
M. Yin, J-C. Krupa, E. Antic-Fidancev, and A. Lorriaux-Rubbens
pp.
8073-8080
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Tunneling process in thermally stimulated luminescence of mixed LuxY1-xAlO3:Ce crystals
A. Vedda, M. Martini, F. Meinardi, J. Chval, M. Dusek, J. A. Mares, E. Mihokova, and M. Nikl
pp.
8081-8086
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Scattering of electromagnetic waves by nearly periodic structures
A. Modinos, V. Yannopapas, and N. Stefanou
pp.
8099-8107
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Delocalization and new phase in americium: Density-functional electronic structure calculations
Per Söderlind, R. Ahuja, O. Eriksson, B. Johansson, and J. M. Wills
pp.
8119-8124
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Midinfrared Hall effect in thin-film metals: Probing the Fermi surface anisotropy in Au and Cu
J. Černe, D. C. Schmadel, M. Grayson, G. S. Jenkins, J. R. Simpson, and H. D. Drew
pp.
8133-8140
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Semiconductors I: bulk
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First-principles calculations of interstitial boron in silicon
M. Hakala, M. J. Puska, and R. M. Nieminen
pp.
8155-8161
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Electronic structure and transport of Bi2Te3 and BaBiTe3
P. Larson, S. D. Mahanti, and M. G. Kanatzidis
pp.
8162-8171
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Femtosecond study of exciton dynamics in 9,9-di-n-hexylfluorene/anthracene random copolymers
M. A. Kreger, N. J. Cherepy, J. Z. Zhang, J. C. Scott, G. Klaerner, R. D. Miller, D. W. McBranch, B. Kraabel, and S. Xu
pp.
8172-8179
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Infrared dielectric anisotropy and phonon modes of sapphire
M. Schubert, T. E. Tiwald, and C. M. Herzinger
pp.
8187-8201
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Localized vibrational modes in GaN:O tracing the formation of oxygen DX-like centers under hydrostatic pressure
C. Wetzel, H. Amano, I. Akasaki, J. W. Ager, III, I. Grzegory, M. Topf, and B. K. Meyer
pp.
8202-8206
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Ultrafast on-chain dissociation of hot excitons in conjugated polymers
V. I. Arkhipov, E. V. Emelianova, S. Barth, and H. Bässler
pp.
8207-8214
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Two-body decay of thermalized excitons in Cu2O
J. T. Warren, K. E. O’Hara, and J. P. Wolfe
pp.
8215-8223
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Mechanical effect on the electronic properties of molecular wires
Mikrajuddin, K. Okuyama, and F. G. Shi
pp.
8224-8232
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Infrared spectroscopy of Mg-H local vibrational mode in GaN with polarized light
B. Clerjaud, D. Côte, A. Lebkiri, C. Naud, J. M. Baranowski, K. Pakula, D. Wasik, and T. Suski
pp.
8238-8241
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Semiconductors II: surfaces, interfaces, microstructures, and related topics
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Tellurium desorption kinetics from (112) Si: Si-Te binding energy
N. K. Dhar, N. Goldsman, and C. E. C. Wood
pp.
8256-8261
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Effect of oxygen on transient photoconductivity in thin-film NbxTi1-xO2
Nickolay Golego, S. A. Studenikin, and Michael Cocivera
pp.
8262-8269
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Evidence for strain in and around InAs quantum dots in GaAs from ion-channeling experiments
L. J. M. Selen, L. J. van IJzendoorn, M. J. A. de Voigt, and P. M. Koenraad
pp.
8270-8275
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Wave-vector dependence of spin and density multipole excitations in quantum dots
Manuel Barranco, Leonardo Colletti, Enrico Lipparini, Agustí Emperador, Martí Pi, and Llorenç Serra
pp.
8289-8297
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Electronic structure of silicon nanowires: A photoemission and x-ray absorption study
Y. F. Zhang, L. S. Liao, W. H. Chan, S. T. Lee, R. Sammynaiken, and T. K. Sham
pp.
8298-8305
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Strain effect in a GaAs-In0.25Ga0.75As-Al0.5Ga0.5As asymmetric quantum wire
Y. Fu, M. Willander, W. Lu, X. Q. Liu, S. C. Shen, C. Jagadish, M. Gal, J. Zou, and D. J. H. Cockayne
pp.
8306-8311
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Time-dependent current oscillations through a quantum dot
E. S. Rodrigues, E. V. Anda, and P. Orellana
pp.
8312-8315
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Short-range interactions and scaling near integer quantum Hall transitions
Ziqiang Wang, Matthew P. A. Fisher, S. M. Girvin, and J. T. Chalker
pp.
8326-8333
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Intensity dependence of the Fermi edge singularity in photoluminescence from modulation-doped AlxGa1-xAs/InyGa1-yAs/GaAs heterostructures
H. Kissel, U. Müller, C. Walther, W. T. Masselink, Yu. I. Mazur, G. G. Tarasov, G. Yu. Rud’ko, M. Ya. Valakh, V. Malyarchuk, and Z. Ya. Zhuchenko
pp.
8359-8362
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Optical properties of biexcitons in ZnS
Yoichi Yamada, Takashi Sakashita, Hidefumi Watanabe, Hideyuki Kugimiya, Seiji Nakamura, and Tsunemasa Taguchi
pp.
8363-8368
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Sinusoidally modulated ZnSexTe1-x superlattices: Fabrication and structural studies
P. M. Reimer, John R. Buschert, S. Lee, and J. K. Furdyna
pp.
8388-8392
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Laser-excited intershell rotation of finite Coulomb clusters in a dusty plasma
M. Klindworth, A. Melzer, A. Piel, and V. A. Schweigert
pp.
8404-8410
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Phase diagram of a two-dimensional liquid in GaAs/AlxGa1-xAs biased double quantum wells
V. B. Timofeev, A. V. Larionov, M. Grassi-Alessi, M. Capizzi, and J. M. Hvam
pp.
8420-8424
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Surface physics, low-dimensional systems, and related topics
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Theory and applications of the stress density
Alessio Filippetti and Vincenzo Fiorentini
pp.
8433-8442
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PDF (127 kB)]
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X-ray standing-wave investigation of (1×2)Rb/Cu(110)
D. Heskett and L. E. Berman
pp.
8450-8454
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Comparison of the electronic structure and surface geometry of the metastable Cs+O overlayers on Ru(0001)
Y. D. Kim, Y. J. Zhu, S. Wendt, A. P. Seitsonen, S. Schwegmann, H. Bludau, H. Over, A. Morgante, and K. Christmann
pp.
8455-8461
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Growth of Fe on MgO(001) studied by He-atom scattering
G. Fahsold, A. Pucci, and K.-H. Rieder
pp.
8475-8483
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Trends in sputter yield data in the film deposition regime
John E. Mahan and André Vantomme
pp.
8516-8525
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Low-temperature adsorption states of benzene on Si(111)7×7 studied by synchrotron-radiation photoemission
M. Carbone, M. N. Piancastelli, M. P. Casaletto, R. Zanoni, G. Comtet, G. Dujardin, and L. Hellner
pp.
8531-8536
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Molecular-dynamics simulations of solid-phase epitaxy of Si: Growth mechanisms
T. Motooka, K. Nisihira, S. Munetoh, K. Moriguchi, and A. Shintani
pp.
8537-8540
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Silicon-doped icosahedral, cuboctahedral, and decahedral clusters of aluminum
Vijay Kumar, Satadeep Bhattacharjee, and Yoshiyuki Kawazoe
pp.
8541-8547
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Multiple Andreev reflection in single-atom niobium junctions
B. Ludoph, N. van der Post, E. N. Bratus’, E. V. Bezuglyi, V. S. Shumeiko, G. Wendin, and J. M. van Ruitenbeek
pp.
8561-8569
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