• BRIEF REPORTS
  • Electronic structure: wide-band, narrow-band, and strongly correlated systems
  • Semiconductors I: bulk
  • Semiconductors II: surfaces, interfaces, microstructures, and related topics
  • Surface physics, low-dimensional systems, and related topics
• ARTICLES
  • Electronic structure: wide-band, narrow-band, and strongly correlated systems
  • Semiconductors I: bulk
  • Semiconductors II: surfaces, interfaces, microstructures, and related topics
  • Surface physics, low-dimensional systems, and related topics
• COMMENTS
• ERRATA

BRIEF REPORTS

Electronic structure: wide-band, narrow-band, and strongly correlated systems

•	Low thermal conductivity of the layered oxide (Na,Ca)Co2O4: Another example of a phonon glass and an electron crystal K. Takahata, Y. Iguchi, D. Tanaka, T. Itoh, and I. Terasaki pp. 12551-12555 [View PDF (141 kB) or Buy this Article (Use Article Pack) ]

•	Screened interaction and self-energy in an infinitesimally polarized electron gas via the Kukkonen-Overhauser method Sudhakar Yarlagadda and Gabriele F. Giuliani pp. 12556-12559 [View PDF (61 kB) or Buy this Article (Use Article Pack) ]

•	Many-site expansion for correcting approximate density functionals A. P. Horsfield and Hideaki Fujitani pp. 12560-12561 [View PDF (42 kB) or Buy this Article (Use Article Pack) ]

•	Theoretical study of relativistic effects in the electronic structure of Pu G. W. Fernando, E. H. Sevilla, and Bernard R. Cooper pp. 12562-12565 [View PDF (48 kB) or Buy this Article (Use Article Pack) ]

•	Site preference energies for 3d impurities in ZrFe2 S. B. Legoas and S. Frota-Pessôa pp. 12566-12569 [View PDF (44 kB) or Buy this Article (Use Article Pack) ]

•	Electronic structure and bonding properties of layered machinable Ti2AlC and Ti2AlN ceramics Yanchun Zhou and Zhimei Sun pp. 12570-12573 [View PDF (337 kB) or Buy this Article (Use Article Pack) ]

•	Influence of Coulomb interaction and impurity scattering on lattice dimerization in a one-dimensional system Yu-Liang Liu and H. Q. Lin pp. 12574-12577 [View PDF (101 kB) or Buy this Article (Use Article Pack) ]

•	Interplay between spin glass and heavy fermion behavior in the d-metal oxides Li1-xZnxV2O4 A. Krimmel, A. Loidl, M. Klemm, S. Horn, and H. Schober pp. 12578-12581 [View PDF (66 kB) or Buy this Article (Use Article Pack) ]

•	Observation of the two-hole satellite in Cr and Fe metal by resonant photoemission at the 2p absorption energy S. Hüfner, S.-H. Yang, B. S. Mun, C. S. Fadley, J. Schäfer, E. Rotenberg, and S. D. Kevan pp. 12582-12585 [View PDF (88 kB) or Buy this Article (Use Article Pack) ]

Semiconductors I: bulk

•	Ion-dose-dependent microstructure in amorphous Ge M. C. Ridgway, C. J. Glover, K. M. Yu, G. J. Foran, C. Clerc, J. L. Hansen, and A. Nylandsted Larsen pp. 12586-12589 [View PDF (63 kB) or Buy this Article (Use Article Pack) ]

•	Local chemistry of Al and P impurities in silica J. Lægsgaard and K. Stokbro pp. 12590-12593 [View PDF (89 kB) or Buy this Article (Use Article Pack) ]

•	Identification of the hexavacancy in silicon with the B804 optical center B. Hourahine, R. Jones, A. N. Safonov, S. Öberg, P. R. Briddon, and S. K. Estreicher pp. 12594-12597 [View PDF (346 kB) or Buy this Article (Use Article Pack) ]

•	Incorporation, diffusion, and electrical activity of Li in GaN Fabio Bernardini and Vincenzo Fiorentini pp. 12598-12601 [View PDF (51 kB) or Buy this Article (Use Article Pack) ]

•	Phosphorus-related deep donor in SiC A. Gali, P. Deák, P. R. Briddon, R. P. Devaty, and W. J. Choyke pp. 12602-12604 [View PDF (85 kB) or Buy this Article (Use Article Pack) ]

•	Quantum confinement in porous silicon Xin Jian Li and Yu Heng Zhang pp. 12605-12607 [View PDF (201 kB) or Buy this Article (Use Article Pack) ]

Semiconductors II: surfaces, interfaces, microstructures, and related topics

•	Metal/semiconductor incommensurate structure with a rare domain configuration exhibiting p31m symmetry M. Y. Lai and Y. L. Wang pp. 12608-12611 [View PDF (394 kB) or Buy this Article (Use Article Pack) ]

•	Transport in quantum wells in the presence of interface roughness Chung-Yu Mou and Tzay-ming Hong pp. 12612-12615 [View PDF (65 kB) or Buy this Article (Use Article Pack) ]

•	Large-scale calculation of optical dielectric functions of diamond nanocrystallites Yoshiyuki Kurokawa, Shintaro Nomura, Tadashi Takemori, and Yoshinobu Aoyagi pp. 12616-12619 [View PDF (95 kB) or Buy this Article (Use Article Pack) ]

•	Absorption spectrum of a weakly n-doped semiconductor quantum well F.X. Bronold pp. 12620-12623 [View PDF (84 kB) or Buy this Article (Use Article Pack) ]

•	Well-width dependence of electron-phonon interaction energies in quantum wells due to confined LO phonon modes Ruisheng Zheng and Mitsuru Matsuura pp. 12624-12627 [View PDF (59 kB) or Buy this Article (Use Article Pack) ]

•	Electronic structure of the ideally H-terminated Si(111)-(1×1) surface S. Gallego, J. Avila, M. Martin, X. Blase, A. Taleb, P. Dumas, and M. C. Asensio pp. 12628-12631 [View PDF (81 kB) or Buy this Article (Use Article Pack) ]

•	Huge binding energy of localized biexcitons in CdS/ZnS quantum structures U. Woggon, K. Hild, F. Gindele, W. Langbein, M. Hetterich, M. Grün, and C. Klingshirn pp. 12632-12635 [View PDF (117 kB) or Buy this Article (Use Article Pack) ]

•	Nonlocality effects of a bulk semiconductor plasma in interaction with quantum well superlattice plasmons Yüksel Ayaz and Norman J. Horing pp. 12636-12638 [View PDF (49 kB) or Buy this Article (Use Article Pack) ]

•	Spin relaxation in semiconductor quantum dots Alexander V. Khaetskii and Yuli V. Nazarov pp. 12639-12642 [View PDF (70 kB) or Buy this Article (Use Article Pack) ]

•	Theoretical study for a quantum-dot molecule irradiated by a microwave field Qing-feng Sun, Jian Wang, and Tsung-han Lin pp. 12643-12646 [View PDF (82 kB) or Buy this Article (Use Article Pack) ]

•	Domain bistability in photoexcited GaAs multiple quantum wells A. M. Tomlinson, A. M. Fox, and C. T. Foxon pp. 12647-12650 [View PDF (107 kB) or Buy this Article (Use Article Pack) ]

•	Hall effect in Gd5(Si1.8Ge2.2) J. Stankiewicz, L. Morellon, P. A. Algarabel, and M. R. Ibarra pp. 12651-12653 [View PDF (162 kB) or Buy this Article (Use Article Pack) ]

•	Ultraviolet anti-Stokes photoluminescence in InxGa1-xN/GaN quantum-well structures Akihiro Satake, Yasuaki Masumoto, Takao Miyajima, Tsunenori Asatsuma, and Tomonori Hino pp. 12654-12657 [View PDF (71 kB) or Buy this Article (Use Article Pack) ]

•	Time-resolved magnetospectroscopy of InxGa1-xAs/GaAs V-shaped quantum wires M. Lomascolo, M. Anni, M. De Giorgi, R. Rinaldi, A. Passaseo, R. Cingolani, A. Lorenzoni, and L.C. Andreani pp. 12658-12661 [View PDF (300 kB) or Buy this Article (Use Article Pack) ]

•	Ultranarrow homogeneous broadening of confined excitons in quantum dots: Effect of the surrounding matrix Michio Ikezawa and Yasuaki Masumoto pp. 12662-12665 [View PDF (50 kB) or Buy this Article (Use Article Pack) ]

•	Electronic structure of HgSe(001) investigated by direct and inverse photoemission D. Eich, D. Hübner, R. Fink, E. Umbach, K. Ortner, C. R. Becker, G. Landwehr, and A. Fleszar pp. 12666-12669 [View PDF (49 kB) or Buy this Article (Use Article Pack) ]

•	First-principles study of the elemental process of epitaxial growth on a GaAs(111)A surface Akihito Taguchi, Kenji Shiraishi, and Tomonori Ito pp. 12670-12673 [View PDF (62 kB) or Buy this Article (Use Article Pack) ]

Surface physics, low-dimensional systems, and related topics

•	Vibrational fine structures in photoelectron spectra of carbon ring clusters Mineo Saito and Osamu Sugino pp. 12674-12677 [View PDF (67 kB) or Buy this Article (Use Article Pack) ]

•	Quantitative analysis of dynamic-force-spectroscopy data on graphite(0001) in the contact and noncontact regimes H. Hölscher, A. Schwarz, W. Allers, U. D. Schwarz, and R. Wiesendanger pp. 12678-12681 [View PDF (177 kB) or Buy this Article (Use Article Pack) ]

•	Photon emission spectroscopy of NiAl(110) in the scanning tunneling microscope N. Nilius, N. Ernst, H.-J. Freund, and P. Johansson pp. 12682-12685 [View PDF (116 kB) or Buy this Article (Use Article Pack) ]

•	Quasicrystalline decagonal phase of Si clusters evaporated in helium and annealed R. Kamalakaran, A. K. Singh, and O. N. Srivastava pp. 12686-12688 [View PDF (170 kB) or Buy this Article (Use Article Pack) ]

•	Clathrates as effective p-type and n-type tetrahedral carbon semiconductors M. Bernasconi, S. Gaito, and G. Benedek pp. 12689-12692 [View PDF (184 kB) or Buy this Article (Use Article Pack) ]

•	Helicity energy of a straight single-wall carbon nanotube Shengli Zhang, Shumin Zhao, Jiuyou Lü, and Minggang Xia pp. 12693-12696 [View PDF (54 kB) or Buy this Article (Use Article Pack) ]

•	Molecular-dynamics study of the diffusion coefficient on a crystal surface F. J. Resende and B. V. Costa pp. 12697-12700 [View PDF (278 kB) or Buy this Article (Use Article Pack) ]

•	Structural symmetry of YD3 epitaxial thin films T. J. Udovic, Q. Huang, R. W. Erwin, B. Hjörvarsson, and R. C. Ward pp. 12701-12704 [View PDF (49 kB) or Buy this Article (Use Article Pack) ]

•	Thermoelectric power of aligned and randomly oriented carbon nanotubes M. Baxendale, K. G. Lim, and G. A. Amaratunga pp. 12705-12708 [View PDF (151 kB) or Buy this Article (Use Article Pack) ]

•	Electron-phonon mass-enhancement parameter and the Fermi-line eccentricity at the Be(101¯0) surface from angle-resolved photoemission T. Balasubramanian, P.-A. Glans, and L. I. Johansson pp. 12709-12712 [View PDF (143 kB) or Buy this Article (Use Article Pack) ]

•	Effects of the interatomic-potential anharmonicity on the bulk and surface photoemission core levels Alessandro Baraldi, Giovanni Comelli, Silvano Lizzit, Renzo Rosei, and Giorgio Paolucci pp. 12713-12716 [View PDF (65 kB) or Buy this Article (Use Article Pack) ]

•	Interaction between intersubband Bernstein modes and coupled plasmon-phonon modes L. V. Kulik, I. V. Kukushkin, V. E. Kirpichev, K. v. Klitzing, and K. Eberl pp. 12717-12720 [View PDF (59 kB) or Buy this Article (Use Article Pack) ]

•	Photon-excited collective modes in a surface alloy S. R. Barman, C. Stampfl, P. Häberle, and K. Horn pp. 12721-12724 [View PDF (118 kB) or Buy this Article (Use Article Pack) ]

•	Maxwell and Sharvin conductance in gold point contacts investigated using TEM-STM D. Erts, H. Olin, L. Ryen, E. Olsson, and A. Thölén pp. 12725-12727 [View PDF (189 kB) or Buy this Article (Use Article Pack) ]

•	Ultrathin Mn films on Cu(111) substrates: Frustrated antiferromagnetic order D. Spišák and J. Hafner pp. 12728-12731 [View PDF (57 kB) or Buy this Article (Use Article Pack) ]

ARTICLES

Electronic structure: wide-band, narrow-band, and strongly correlated systems

•	Femtosecond luminescence dynamics in a nonlinear optical organic dendrimer O. Varnavski, A. Leanov, L. Liu, J. Takacs, and T. Goodson pp. 12732-12738 [View PDF (99 kB) or Buy this Article (Use Article Pack) ]

•	Dynamical cluster approximation: Nonlocal dynamics of correlated electron systems M. H. Hettler, M. Mukherjee, M. Jarrell, and H. R. Krishnamurthy pp. 12739-12756 [View PDF (379 kB) or Buy this Article (Use Article Pack) ]

•	Haldane liquid with mutual exclusion statistics Kazumoto Iguchi pp. 12757-12765 [View PDF (122 kB) or Buy this Article (Use Article Pack) ]

•	Effect of short-range electron correlations in dynamic transport in a Luttinger liquid V. A. Sablikov and Yasha Gindikin pp. 12766-12771 [View PDF (100 kB) or Buy this Article (Use Article Pack) ]

•	Asymptotic convergence for iterative optimization in electronic structure Ross A. Lippert and Mark P. Sears pp. 12772-12785 [View PDF (212 kB) or Buy this Article (Use Article Pack) ]

•	Interaction between Er atoms and the carbon cage C82 Zhong Huang, Ling Ye, Zhong Qin Yang, and Xide Xie pp. 12786-12791 [View PDF (133 kB) or Buy this Article (Use Article Pack) ]

•	Valence-band excitations in V2O5 S. Atzkern, S. V. Borisenko, M. Knupfer, M. S. Golden, J. Fink, A. N. Yaresko, V. N. Antonov, M. Klemm, and S. Horn pp. 12792-12798 [View PDF (480 kB) or Buy this Article (Use Article Pack) ]

•	Low-energy scale of the periodic Anderson model Th. Pruschke, R. Bulla, and M. Jarrell pp. 12799-12809 [View PDF (155 kB) or Buy this Article (Use Article Pack) ]

•	Combining density-functional and dynamical-mean-field theory for La1-xSrxTiO3 M. B. Zölfl, Th. Pruschke, J. Keller, A. I. Poteryaev, I. A. Nekrasov, and V. I. Anisimov pp. 12810-12815 [View PDF (83 kB) or Buy this Article (Use Article Pack) ]

•	Strong-coupling theory for the Hubbard model A. Dorneich, M. G. Zacher, C. Gröber, and R. Eder pp. 12816-12824 [View PDF (186 kB) or Buy this Article (Use Article Pack) ]

•	Electronic structure of plutonium monochalcogenides P. M. Oppeneer, T. Kraft, and M. S. Brooks pp. 12825-12834 [View PDF (222 kB) or Buy this Article (Use Article Pack) ]

•	Electron transport through a mesoscopic metal-CDW-metal junction I. V. Krive, A. S. Rozhavsky, E. R. Mucciolo, and L. E. Oxman pp. 12835-12841 [View PDF (101 kB) or Buy this Article (Use Article Pack) ]

•	Chiral electromagnetic waves at the boundary of optical isomers: Quantum Cotton-Mouton effect L. E. Zhukov and M. E. Raikh pp. 12842-12847 [View PDF (81 kB) or Buy this Article (Use Article Pack) ]

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Photoionization spectral hole burning and its erasure in Li2Ge7O15:Cr3+: Effects of site-dependent energy-level shifts within the band gap S. A. Basun, S. P. Feofilov, A. A. Kaplyanskii, U. Happek, J. Choi, K. W. Jang, and R. S. Meltzer pp. 12848-12853 [View PDF (97 kB) or Buy this Article (Use Article Pack) ]

•	Polarization dependence of soft-x-ray Raman scattering at the L edge of TiO2 Y. Harada, T. Kinugasa, R. Eguchi, M. Matsubara, A. Kotani, M. Watanabe, A. Yagishita, and S. Shin pp. 12854-12859 [View PDF (292 kB) or Buy this Article (Use Article Pack) ]

•	Electronic structure in the band gap of lightly doped SrTiO3 by high-resolution x-ray absorption spectroscopy T. Higuchi, T. Tsukamoto, K. Kobayashi, Y. Ishiwata, M. Fujisawa, T. Yokoya, S. Yamaguchi, and S. Shin pp. 12860-12863 [View PDF (140 kB) or Buy this Article (Use Article Pack) ]

•	Theoretical investigations of bond properties in graphite and graphitic silicon YuChen Wang, Kurt Scheerschmidt, and Ulrich Gösele pp. 12864-12870 [View PDF (1011 kB) or Buy this Article (Use Article Pack) ]

•	Numerical method for computing defect modes in two-dimensional photonic crystals with dielectric or metallic inclusions Min Qiu and Sailing He pp. 12871-12876 [View PDF (352 kB) or Buy this Article (Use Article Pack) ]

•	Transverse elastic waves in superlattices: The Brewster acoustic angle B. Manzanares-Martínez and F. Ramos-Mendieta pp. 12877-12881 [View PDF (500 kB) or Buy this Article (Use Article Pack) ]

•	Infrared study of crystal-field excitations in Nd2-xCexCuO4 S. Jandl, P. Richard, M. Poirier, V. Nekvasil, A. A. Nugroho, A. A. Menovsky, D. I. Zhigunov, S. N. Barilo, and S. V. Shiryaev pp. 12882-12887 [View PDF (107 kB) or Buy this Article (Use Article Pack) ]

•	Collective modes in a system with two spin-density waves: The Ribault phase of quasi-one-dimensional organic conductors N. Dupuis and Victor M. Yakovenko pp. 12888-12908 [View PDF (339 kB) or Buy this Article (Use Article Pack) ]

Semiconductors I: bulk

•	Vibronic spectra of impurity-related optical centers in diamond A. M. Zaitsev pp. 12909-12922 [View PDF (298 kB) or Buy this Article (Use Article Pack) ]

•	Microstructural evolution of helium-implanted α-SiC J. Chen, P. Jung, and H. Trinkaus pp. 12923-12932 [View PDF (549 kB) or Buy this Article (Use Article Pack) ]

•	Direct calculation of k⋅p parameters for wurtzite AlN, GaN, and InN D. J. Dugdale, S. Brand, and R. A. Abram pp. 12933-12938 [View PDF (89 kB) or Buy this Article (Use Article Pack) ]

•	Dimer of substitutional carbon in silicon studied by EPR and ab initio methods J. R. Byberg, B. Bech Nielsen, M. Fanciulli, S. K. Estreicher, and P. A. Fedders pp. 12939-12945 [View PDF (206 kB) or Buy this Article (Use Article Pack) ]

•	Isotopic effects on the dielectric response of Si around the E1 gap L. F. Lastras-Martínez, T. Ruf, M. Konuma, M. Cardona, and D. E. Aspnes pp. 12946-12951 [View PDF (103 kB) or Buy this Article (Use Article Pack) ]

•	Donor impurities and DX centers in the ionic semiconductor CdF2: Influence of covalency D. E. Onopko and A. I. Ryskin pp. 12952-12956 [View PDF (187 kB) or Buy this Article (Use Article Pack) ]

•	Photoluminescence quenching at a polythiophene/C60 heterojunction M. Theander, A. Yartsev, D. Zigmantas, V. Sundström, W. Mammo, M. R. Andersson, and O. Inganäs pp. 12957-12963 [View PDF (119 kB) or Buy this Article (Use Article Pack) ]

•	Observation and theory of the V-O-H2 complex in silicon V. P. Markevich, L. I. Murin, M. Suezawa, J. L. Lindström, J. Coutinho, R. Jones, P. R. Briddon, and S. Öberg pp. 12964-12969 [View PDF (140 kB) or Buy this Article (Use Article Pack) ]

•	Transport of heavily boron-doped synthetic semiconductor diamond in the hopping regime Toshimaro Sato, Kazutoshi Ohashi, Hiroyuki Sugai, Takashi Sumi, Katsuji Haruna, Hiroshi Maeta, Norimasa Matsumoto, and Hideo Otsuka pp. 12970-12976 [View PDF (95 kB) or Buy this Article (Use Article Pack) ]

•	Effect of long-range random potentials on the electronic transport properties of disordered semiconductors: A numerical study H. Overhof and M. Schmidtke pp. 12977-12981 [View PDF (70 kB) or Buy this Article (Use Article Pack) ]

Semiconductors II: surfaces, interfaces, microstructures, and related topics

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Structure of an InAs(111)A-(2×2)S surface studied by scanning tunneling microscopy, photoelectron spectroscopy, and x-ray photoelectron diffraction S. Ichikawa, N Sanada, S. Mochizuki, Y. Esaki, Y. Fukuda, M. Shimomura, T. Abukawa, and S. Kono pp. 12982-12987 [View PDF (392 kB) or Buy this Article (Use Article Pack) ]

•	Geometrical structure of the 1 / 2-ML (2×1) and 1 / 3-ML (2×3) Ba/Si(001) interfaces A. Herrera-Gómez, P. Pianetta, D. Marshall, E. Nelson, and W. E. Spicer pp. 12988-12991 [View PDF (367 kB) or Buy this Article (Use Article Pack) ]

•	Dynamics of thermal growth of silicon oxide films on Si R. M. de Almeida, S. Gonçalves, I. J. Baumvol, and F. C. Stedile pp. 12992-12999 [View PDF (145 kB) or Buy this Article (Use Article Pack) ]

•	Dynamic change in the surface and layer structures during epitaxial growth of Si on a Si(111)-7×7 surface Y. Fukaya, Y. Shigeta, and K. Maki pp. 13000-13004 [View PDF (263 kB) or Buy this Article (Use Article Pack) ]

•	Lattice parameter of Si1-x-yGexCy alloys D. De Salvador, M. Petrovich, M. Berti, F. Romanato, E. Napolitani, A. Drigo, J. Stangl, S. Zerlauth, M. Mühlberger, F. Schäffler, G. Bauer, and P. C. Kelires pp. 13005-13013 [View PDF (276 kB) or Buy this Article (Use Article Pack) ]

•	Self-similar magnetoconductance fluctuations in quantum dots E. Louis and J. A. Vergés pp. 13014-13020 [View PDF (103 kB) or Buy this Article (Use Article Pack) ]

•	Tight-binding description of the band-edge states in GaAs/AlAs quantum wells and superlattices J. G. Menchero, T. G. Dargam, and Belita Koiller pp. 13021-13025 [View PDF (82 kB) or Buy this Article (Use Article Pack) ]

•	Spectroscopic structure of two interacting electrons in a quantum dot by the shifted 1/N expansion method Mohammad El-Said pp. 13026-13031 [View PDF (74 kB) or Buy this Article (Use Article Pack) ]

•	Theory of excess noise of a quantum dot in the presence of a microwave field Qing-feng Sun, Jian Wang, and Tsung-han Lin pp. 13032-13036 [View PDF (91 kB) or Buy this Article (Use Article Pack) ]

•	Excess conductance in normal-metal/Anderson insulator/superconductor junctions A. Vaknin, A. Frydman, and Z. Ovadyahu pp. 13037-13044 [View PDF (131 kB) or Buy this Article (Use Article Pack) ]

•	InAs-AlSb quantum wells in tilted magnetic fields S. Brosig, K. Ensslin, A. G. Jansen, C. Nguyen, B. Brar, M. Thomas, and H. Kroemer pp. 13045-13049 [View PDF (234 kB) or Buy this Article (Use Article Pack) ]

•	Grazing-angle intersubband absorption in n-doped GaAs multiple quantum wells E. Dupont, M. Gao, H. C. Liu, Z. R. Wasilewski, A. Shen, M. Załużny, S. R. Schmidt, and A. Seilmeier pp. 13050-13054 [View PDF (196 kB) or Buy this Article (Use Article Pack) ]

•	Magnetoluminescence investigations of Si/Si0.76Ge0.24 quantum wells C. Penn, F. Schäffler, G. Bauer, P. C. Christianen, J. C. Maan, and S. Glutsch pp. 13055-13059 [View PDF (87 kB) or Buy this Article (Use Article Pack) ]

•	Smooth interface effects on the Raman scattering in zinc-blende AlN/GaN superlattices E. F. Bezerra, V. N. Freire, A. M. Teixeira, M. A. Araújo Silva, P. T. Freire, J. Mendes Filho, and V. Lemos pp. 13060-13063 [View PDF (62 kB) or Buy this Article (Use Article Pack) ]

•	Rotons of composite fermions: Comparison between theory and experiment Vito W. Scarola, Kwon Park, and Jainendra K. Jain pp. 13064-13072 [View PDF (141 kB) or Buy this Article (Use Article Pack) ]

•	Dark excitons due to direct Coulomb interactions in silicon quantum dots F. A. Reboredo, A. Franceschetti, and A. Zunger pp. 13073-13087 [View PDF (407 kB) or Buy this Article (Use Article Pack) ]

•	Disorder-induced dephasing in semiconductors S. Weiser, T. Meier, J. Möbius, A. Euteneuer, E. J. Mayer, W. Stolz, M. Hofmann, W. W. Rühle, P. Thomas, and S. W. Koch pp. 13088-13098 [View PDF (150 kB) or Buy this Article (Use Article Pack) ]

•	Quasi-one-dimensional excitons in lateral surface-induced superlattices G. H. Cocoletzi and S. E. Ulloa pp. 13099-13103 [View PDF (143 kB) or Buy this Article (Use Article Pack) ]

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Excitons and shallow impurities in GaAs-Ga1-xAlxAs semiconductor heterostructures within a fractional-dimensional space approach: Magnetic-field effects E. Reyes-Gómez, A. Matos-Abiague, C. A. Perdomo-Leiva, M. de Dios-Leyva, and L. E. Oliveira pp. 13104-13114 [View PDF (170 kB) or Buy this Article (Use Article Pack) ]

•	Progressive suppression of spin relaxation in two-dimensional channels of finite width A. A. Kiselev and K. W. Kim pp. 13115-13120 [View PDF (89 kB) or Buy this Article (Use Article Pack) ]