Physical Review B
– 15 January 2000
Volume 61, Issue 4
RAPID COMMUNICATIONS
Electronic structure: wide-band, narrow-band, and strongly correlated systems
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Tunable two-dimensional photonic crystals using liquid crystal infiltration
S. W. Leonard, J. P. Mondia, H. M. van Driel, O. Toader, S. John, K. Busch, A. Birner, U. Gösele, and V. Lehmann
pp.
R2389-R2392
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Resonant elastic x-ray scattering of graphite and diamond at the carbon K threshold
Yasuji Muramatsu, Melissa M. Grush, and Rupert C. C. Perera
pp.
R2393-R2396
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PDF (67 kB)]
Semiconductors I: bulk
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Microscopic picture of the single vacancy in germanium
A. Fazzio, A. Janotti, Antônio J. R. da Silva, and R. Mota
pp.
R2401-R2404
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Semiconductors II: surfaces, interfaces, microstructures, and related topics
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Origin of two types of excitons in CdSe dots on ZnSe
S. Lee, J. C. Kim, H. Rho, C. S. Kim, L. M. Smith, Howard E. Jackson, J. K. Furdyna, and M. Dobrowolska
pp.
R2405-R2408
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Hydrogen-induced 3×1 phase of the Si-rich 3C-SiC(001) surface
H. W. Yeom, I. Matsuda, Y.-C. Chao, S. Hara, S. Yoshida, and R. I. G. Uhrberg
pp.
R2417-R2420
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Orientation of chemical bonds at type-II heterointerfaces probed by polarized optical spectroscopy
D. R. Yakovlev, E. L. Ivchenko, V. P. Kochereshko, A. V. Platonov, S. V. Zaitsev, A. A. Maksimov, I. I. Tartakovskii, V. D. Kulakovskii, W. Ossau, M. Keim, A. Waag, and G. Landwehr
pp.
R2421-R2424
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Enhanced phonon-assisted photoluminescence in InAs/GaAs parallelepiped quantum dots
V. M. Fomin, V. N. Gladilin, S. N. Klimin, J. T. Devreese, P. M. Koenraad, and J. H. Wolter
pp.
R2436-R2439
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Silicon-induced nanostructure evolution of the GaAs(001) surface
Z. M. Wang, L. Däweritz, P. Schützendübe, and K. H. Ploog
pp.
R2440-R2443
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Surface physics, low-dimensional systems, and related topics
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Energetics and dynamics of Pt dimers on Pt(110)-(1×2)
T. R. Linderoth, S. Horch, L. Petersen, S. Helveg, M. Schønning, E. Lægsgaard, I. Stensgaard, and F. Besenbacher
pp.
R2448-R2451
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Atom-by-atom and concerted hopping of adatom pairs on an open metal surface
A. Bogicevic, S. Ovesson, B. I. Lundqvist, and D. R. Jennison
pp.
R2456-R2459
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Surface states of the 3C-SiC(001)-c(4×2) surface studied using angle-resolved photoemission
L. Duda, L. S. O. Johansson, B. Reihl, H. W. Yeom, S. Hara, and S. Yoshida
pp.
R2460-R2463
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Optical and dc conductivity study of potassium-doped single-walled carbon nanotube films
B. Ruzicka, L. Degiorgi, R. Gaal, L. Thien-Nga, R. Bacsa, J.-P. Salvetat, and L. Forró
pp.
R2468-R2471
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Carbon-atom chain formation in the core of nanotubes
Zhenxia Wang, Xuezhi Ke, Zhiyuan Zhu, Fengshou Zhang, Meiling Ruan, and Jinqing Yang
pp.
R2472-R2474
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ARTICLES
Electronic structure: wide-band, narrow-band, and strongly correlated systems
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Thermoelectric properties of thallium-filled skutterudites
B. C. Sales, B. C. Chakoumakos, and D. Mandrus
pp.
2475-2481
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Phase diagrams and Fermi surface properties of CePb3
T. Ebihara, K. Koizumi, S. Uji, C. Terakura, T. Terashima, H. Suzuki, H. Kitazawa, and G. Kido
pp.
2513-2520
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Optical spectroscopic study of the interplay of spin and charge in α′-NaV2O5
A. Damascelli, C. Presura, D. van der Marel, J. Jegoudez, and A. Revcolevschi
pp.
2535-2552
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Kβ resonant x-ray emission spectra in MnF2
M. Taguchi, J. C. Parlebas, T. Uozumi, A. Kotani, and C.-C. Kao
pp.
2553-2560
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First-principles formation energies of monovacancies in bcc transition metals
Per Söderlind, L. H. Yang, John A. Moriarty, and J. M. Wills
pp.
2579-2586
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Density-functional versus wave-function methods: Toward a benchmark for the jellium surface energy
Zidan Yan, John P. Perdew, Stefan Kurth, Carlos Fiolhais, and Luis Almeida
pp.
2595-2598
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Semiconductors I: bulk
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Silicon vacancy related defect in 4H and 6H SiC
E. Sörman, N. T. Son, W. M. Chen, O. Kordina, C. Hallin, and E. Janzén
pp.
2613-2620
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Microscopic structure of the substitutional Al defect in α quartz
Marco Magagnini, Paolo Giannozzi, and Andrea Dal Corso
pp.
2621-2625
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Generation of dense electron-hole plasmas in silicon
K. Sokolowski-Tinten and D. von der Linde
pp.
2643-2650
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Semiconductors II: surfaces, interfaces, microstructures, and related topics
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Ab initio calculations of the β-SiC(001)/Ti interface
M. Kohyama and J. Hoekstra
pp.
2672-2679
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Ab initio studies on the β-SiC(001)-(5×2) surface
Wenchang Lu, Peter Krüger, and Johannes Pollmann
pp.
2680-2687
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Ab initio investigation of Bi-covered GaSb(110) surfaces
S. C. A. Gay and G. P. Srivastava
pp.
2688-2698
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Structural properties of Ga clusters on Si(111)
Shiow-Fon Tsay, M.-H. Tsai, M. Y. Lai, and Y. L. Wang
pp.
2699-2702
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Spontaneous polarization and piezoelectric field in GaN/Al0.15Ga0.85N quantum wells: Impact on the optical spectra
R. Cingolani, A. Botchkarev, H. Tang, H. Morkoç, G. Traetta, G. Coli, M. Lomascolo, A. Di Carlo, F. Della Sala, and P. Lugli
pp.
2711-2715
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Bipolaron binding in quantum wires
E. P. Pokatilov, V. M. Fomin, J. T. Devreese, S. N. Balaban, and S. N. Klimin
pp.
2721-2728
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Charge relaxation and dephasing in Coulomb-coupled conductors
Markus Büttiker and Andrew M. Martin
pp.
2737-2741
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Skyrmion dynamics and NMR line shapes in quantum Hall ferromagnets
Jairo Sinova, S. M. Girvin, T. Jungwirth, and K. Moon
pp.
2749-2754
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Skyrmion dynamics in quantum Hall ferromagnets
A. Villares Ferrer and A. O. Caldeira
pp.
2755-2764
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Exciton dynamics in GaAs/Ga1-xAlxAs heterojunctions and GaAs epilayers
J. X. Shen, R. Pittini, Y. Oka, and E. Kurtz
pp.
2765-2772
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Electronic structure of self-organized InAs/GaAs quantum dots bounded by {136} facets
Weidong Yang, Hao Lee, Thomas J. Johnson, Peter C. Sercel, and A. G. Norman
pp.
2784-2793
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Many-body effects in highly p-type modulation-doped GaAs/AlxGa1-xAs quantum wells
S. Wongmanerod, B. E. Sernelius, P. O. Holtz, B. Monemar, O. Mauritz, K. Reginski, and M. Bugajski
pp.
2794-2798
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Structural and optical properties of Si-doped GaN
A. Cremades, L. Görgens, O. Ambacher, M. Stutzmann, and F. Scholz
pp.
2812-2818
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Dynamic-mode scanning force microscopy study of n-InAs(110)-(1×1) at low temperatures
A. Schwarz, W. Allers, U. D. Schwarz, and R. Wiesendanger
pp.
2837-2845
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Renormalized bosonic interaction of excitons
Jun-ichi Inoue, Tobias Brandes, and Akira Shimizu
pp.
2863-2873
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Confinement of two-dimensional excitons in a nonhomogeneous magnetic field
J. A. K. Freire, A. Matulis, F. M. Peeters, V. N. Freire, and G. A. Farias
pp.
2895-2903
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Bismuth nanowire arrays: Synthesis and galvanomagnetic properties
J. Heremans, C. M. Thrush, Yu-Ming Lin, S. Cronin, Z. Zhang, M. S. Dresselhaus, and J. F. Mansfield
pp.
2921-2930
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Single-spin measurement using single-electron transistors to probe two-electron systems
B. E. Kane, N. S. McAlpine, A. S. Dzurak, R. G. Clark, G. J. Milburn, He Bi Sun, and Howard Wiseman
pp.
2961-2972
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Surface physics, low-dimensional systems, and related topics
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Trigonal warping effect of carbon nanotubes
R. Saito, G. Dresselhaus, and M. S. Dresselhaus
pp.
2981-2990
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Atomic structure of carbon nanotubes from scanning tunneling microscopy
L. C. Venema, V. Meunier, Ph. Lambin, and C. Dekker
pp.
2991-2996
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Quantitative approach to temporal diffraction from stepped surfaces
A. Menzel, K. Wiesenfeld, E. H. Conrad, and M. C. Tringides
pp.
2997-3005
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Elemental structure in Si(110)-“16×2” revealed by scanning tunneling microscopy
Toshu An, Masamichi Yoshimura, Izumi Ono, and Kazuyuki Ueda
pp.
3006-3011
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Mechanisms for plasma and reactive ion etch-front roughening
Jason T. Drotar, Y.-P. Zhao, T.-M. Lu, and G.-C. Wang
pp.
3012-3021
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Random electric fields and impurity diffusion in δ layers
N. S. Averkiev, A. M. Monakhov, A. Shik, P. M. Koenraad, and J. H. Wolter
pp.
3033-3038
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Self-organization of stressed surfaces: The role of local relaxations
Bernard Croset and Christophe de Beauvais
pp.
3039-3042
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Surface optical properties of clean Cu(110) and Cu(110)-(2×1)-O
K. Stahrenberg, Th. Herrmann, N. Esser, and W. Richter
pp.
3043-3047
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Nonlinear optical susceptibilities of fullerenes in the condensed phase
Yi Luo, Patrick Norman, Peter Macak, and Hans Ågren
pp.
3060-3066
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Elastic properties of single-walled carbon nanotubes
V. N. Popov, V. E. Van Doren, and M. Balkanski
pp.
3078-3084
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Magnetic properties of monodispersed Co/CoO clusters
D. L. Peng, K. Sumiyama, T. Hihara, S. Yamamuro, and T. J. Konno
pp.
3103-3109
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Lithium insertion mechanism in SnS2
I. Lefebvre-Devos, J. Olivier-Fourcade, J. C. Jumas, and P. Lavela
pp.
3110-3116
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