Physical Review B
– 15 September 2000
Volume 62, Issue 12
RAPID COMMUNICATIONS
Electronic structure: wide-band, narrow-band, and strongly correlated systems
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Charge ordering in a quasi-two-dimensional organic conductor
K. Miyagawa, A. Kawamoto, and K. Kanoda
pp.
R7679-R7682
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Final-state interaction in Compton scattering from electron liquids
C. Sternemann, K. Hämäläinen, A. Kaprolat, A. Soininen, G. Döring, C.-C. Kao, S. Manninen, and W. Schülke
pp.
R7687-R7690
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Electronic states in Rb1C60 studied by EPR under pressure: 3D Mott-Hubbard system
Hirokazu Sakamoto, Shigenori Kobayashi, Kenji Mizoguchi, Mayumi Kosaka, and Katsumi Tanigaki
pp.
R7691-R7694
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Exact diagonalization study of rare events in disordered conductors
V. Uski, B. Mehlig, R. A. Römer, and M. Schreiber
pp.
R7699-R7702
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X-ray natural circular dichroism
Paolo Carra and Robert Benoist
pp.
R7703-R7706
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Semiconductors I: bulk
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Low-density framework form of crystalline silicon with a wide optical band gap
Jan Gryko, Paul F. McMillan, Robert F. Marzke, Ganesh K. Ramachandran, Derek Patton, Sudip K. Deb, and Otto F. Sankey
pp.
R7707-R7710
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Semiconductors II: surfaces, interfaces, microstructures, and related topics
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Surface reconstructions for InAs(001) studied with density-functional theory and STM
C. Ratsch, W. Barvosa-Carter, F. Grosse, J. H. G. Owen, and J. J. Zinck
pp.
R7719-R7722
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Shot noise at hopping via two sites
Yusuf A. Kinkhabwala and Alexander N. Korotkov
pp.
R7727-R7730
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Single-electron spectroscopy in a coupled triple-dot system: Role of interdot electron-electron interactions
S. D. Lee, K. S. Park, J. W. Park, Jung B. Choi, S.-R. Eric Yang, K.-H. Yoo, J. Kim, S. I. Park, and K. T. Kim
pp.
R7735-R7738
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Occupation of the double subbands by the two-dimensional electron gas in the triangular quantum well at AlxGa1-xN/GaN heterostructures
Z. W. Zheng, B. Shen, R. Zhang, Y. S. Gui, C. P. Jiang, Z. X. Ma, G. Z. Zheng, S. L. Guo, Y. Shi, P. Han, Y. D. Zheng, T. Someya, and Y. Arakawa
pp.
R7739-R7742
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Hartree-Fock theory of hole stripe states
Tae-Suk Kim, S.-R. Eric Yang, and A. H. MacDonald
pp.
R7747-R7750
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Double-resonance spectroscopy of InAs/GaAs self-assembled quantum dots
B. N. Murdin, A. R. Hollingworth, J. A. Barker, D. G. Clarke, P. C. Findlay, C. R. Pidgeon, J.-P. R. Wells, I. V. Bradley, S. Malik, and R. Murray
pp.
R7755-R7758
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Stabilized electronic state and its luminescence at the surface of oxygen-passivated porous silicon
X. L. Wu, S. J. Xiong, D. L. Fan, Y. Gu, X. M. Bao, G. G. Siu, and M. J. Stokes
pp.
R7759-R7762
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Biexcitons or bipolaritons in a semiconductor microcavity
P. Borri, W. Langbein, U. Woggon, J. R. Jensen, and J. M. Hvam
pp.
R7763-R7766
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Magnetic polarons in a single diluted magnetic semiconductor quantum dot
A. A. Maksimov, G. Bacher, A. McDonald, V. D. Kulakovskii, A. Forchel, C. R. Becker, G. Landwehr, and L. W. Molenkamp
pp.
R7767-R7770
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Surface physics, low-dimensional systems, and related topics
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Structures of the 4×1 and 1×2 reconstructions of SnO2(110)
C. L. Pang, S. A. Haycock, H. Raza, P. J. Møller, and G. Thornton
pp.
R7775-R7778
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ARTICLES
Electronic structure: wide-band, narrow-band, and strongly correlated systems
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Peculiarities of defect structure and mechanical properties of iridium: Results of ab initio electronic structure calculations
Yu. N. Gornostyrev, M. I. Katsnelson, N. I. Medvedeva, O. N. Mryasov, A. J. Freeman, and A. V. Trefilov
pp.
7802-7808
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Ab initio study of MF2 (M=Mn, Fe, Co, Ni) rutile-type compounds using the periodic unrestricted Hartree-Fock approach
Ibério de P. R. Moreira, Roberto Dovesi, Carla Roetti, Victor R. Saunders, and Roberto Orlando
pp.
7816-7823
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Ab initio pseudopotential calculation for TTF-TCNQ and TSeF-TCNQ
Shoji Ishibashi and Masanori Kohyama
pp.
7839-7844
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Dynamics of a hole in a CuO4 plaquette: Electron energy-loss spectroscopy of Li2CuO2
S. Atzkern, M. Knupfer, M. S. Golden, J. Fink, C. Waidacher, J. Richter, K. W. Becker, N. Motoyama, H. Eisaki, and S. Uchida
pp.
7845-7849
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Metal-insulator transitions in NdNiO3 thin films
G. Catalan, R. M. Bowman, and J. M. Gregg
pp.
7892-7900
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Mapping of the anomalous magnetotransport regime in the α-(BEDT-TTF)2MHg(SCN)4 (M=K,Tl) organic conductors
M. M. Honold, N. Harrison, M. V. Kartsovnik, H. Yaguchi, J. Singleton, C. H. Mielke, N. D. Kushch, M. Kurmoo, and P. Day
pp.
7908-7919
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Charge-carrier transport in disordered organic solids
S. D. Baranovskii, H. Cordes, F. Hensel, and G. Leising
pp.
7934-7938
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Infrared and Raman studies of the Verwey transition in magnetite
L. V. Gasparov, D. B. Tanner, D. B. Romero, H. Berger, G. Margaritondo, and L. Forró
pp.
7939-7944
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Energy dependence of experimental Be Compton profiles
S. Huotari, K. Hämäläinen, S. Manninen, S. Kaprzyk, A. Bansil, W. Caliebe, T. Buslaps, V. Honkimäki, and P. Suortti
pp.
7956-7963
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Energy-loss structure in core-level photoemission satellites of SrTiO3, SrTiO3:La, and SrTiO3:Nb
Shigemi Kohiki, Masao Arai, Hideki Yoshikawa, Sei Fukushima, Masaoki Oku, and Yoshio Waseda
pp.
7964-7969
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3d resonant photoemission spectra at the Ce L3 edge of CeRh3
H. Ogasawara, A. Kotani, P. Le Fèvre, D. Chandesris, and H. Magnan
pp.
7970-7975
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Real-space, real-time method for the dielectric function
G. F. Bertsch, J.-I. Iwata, Angel Rubio, and K. Yabana
pp.
7998-8002
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Semiconductors I: bulk
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Nucleation of hydrogen-induced platelets in silicon
N. H. Nickel, G. B. Anderson, N. M. Johnson, and J. Walker
pp.
8012-8015
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Nonergodic effects in the Coulomb glass: Specific heat
A. Díaz-Sánchez, A. Möbius, M. Ortuño, A. Neklioudov, and M. Schreiber
pp.
8030-8037
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Zeeman effect of electronic Raman lines of acceptors in elemental semiconductors: Boron in blue diamond
Hyunjung Kim, Zdenka Barticevic, A. K. Ramdas, S. Rodriguez, M. Grimsditch, and T. R. Anthony
pp.
8038-8052
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Low-temperature positron diffusion in GaAs
T. Laine, K. Saarinen, and P. Hautojärvi
pp.
8058-8061
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Phonon generation and decay in hydrogenated amorphous silicon
Marjolein van der Voort, Andrey V. Akimov, and Jaap I. Dijkhuis
pp.
8072-8081
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Semiconductors II: surfaces, interfaces, microstructures, and related topics
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Electronic structure of Sn/Si(111) √3×√3: Indications of a low-temperature phase
R. I. G. Uhrberg, H. M. Zhang, T. Balasubramanian, S. T. Jemander, N. Lin, and G. V. Hansson
pp.
8082-8086
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Surface phase diagram of (2×4) and (4×2) reconstructions of GaAs(001)
W. G. Schmidt, S. Mirbt, and F. Bechstedt
pp.
8087-8091
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Reflectance-difference spectroscopy of mixed arsenic-rich phases of gallium arsenide (001)
M. J. Begarney, L. Li, C. H. Li, D. C. Law, Q. Fu, and R. F. Hicks
pp.
8092-8097
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Correlated piecewise diffusion of a Ge ad-dimer on the Si(001) surface
Zhong-Yi Lu, Cai-Zhuang Wang, and Kai-Ming Ho
pp.
8104-8107
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Formation of Wigner molecules in small quantum dots
S. M. Reimann, M. Koskinen, and M. Manninen
pp.
8108-8113
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Light-hole to heavy-hole acoustic phonon scattering rate
G. Sun, L. Friedman, and R. A. Soref
pp.
8114-8119
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Diffusion Monte Carlo study of circular quantum dots
Francesco Pederiva, C. J. Umrigar, and E. Lipparini
pp.
8120-8125
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Charge and spin addition energies of a one-dimensional quantum dot
T. Kleimann, M. Sassetti, B. Kramer, and A. Yacoby
pp.
8144-8153
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Universality of the Kondo effect in a quantum dot out of equilibrium
A. Kaminski, Yu. V. Nazarov, and L. I. Glazman
pp.
8154-8170
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Numerical test of disk trial wave function for a half-filled Landau level
S.-R. Eric Yang, Min-Chul Cha, and Jung Hoon Han
pp.
8171-8179
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Robust electrical spin injection into a semiconductor heterostructure
B. T. Jonker, Y. D. Park, B. R. Bennett, H. D. Cheong, G. Kioseoglou, and A. Petrou
pp.
8180-8183
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Generation of a difference harmonic in a biased superlattice
A. V. Korovin, F. T. Vasko, and V. V. Mitin
pp.
8192-8198
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Center-of-mass quantized exciton polariton states in bulk-GaAs microcavities
A. Fainstein, B. Jusserand, P. Senellart, J. Bloch, V. Thierry-Mieg, and R. Planel
pp.
8199-8203
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Local optical spectroscopy of semiconductor nanostructures in the linear regime
Oskar Mauritz, Guido Goldoni, Elisa Molinari, and Fausto Rossi
pp.
8204-8211
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Linear waveguides in photonic-crystal slabs
Steven G. Johnson, Pierre R. Villeneuve, Shanhui Fan, and J. D. Joannopoulos
pp.
8212-8222
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Residual strain in Ge pyramids on Si(111) investigated by x-ray crystal truncation rod scattering
Zoltan Kovats, Markus Rauscher, Hartmut Metzger, Johann Peisl, Rogério Paniago, Hans-Dieter Pfannes, Jörg Schulze, Ignaz Eisele, Federico Boscherini, and Salvador Ferrer
pp.
8223-8231
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Photoluminescence and radiative lifetime of trions in GaAs quantum wells
Axel Esser, Erich Runge, Roland Zimmermann, and Wolfgang Langbein
pp.
8232-8239
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Sequential tunneling and spin degeneracy of zero-dimensional states
M. R. Deshpande, J. W. Sleight, M. A. Reed, and R. G. Wheeler
pp.
8240-8248
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Surface physics, low-dimensional systems, and related topics
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Lowest-energy structure of (C60)n clusters and thermal effects
Wingham Zhang, Lei Liu, Jun Zhuang, and Yufen Li
pp.
8276-8280
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Investigation of epitaxial arrangement and electronic structure of a La@C82 film grown on an MoS2 surface
K. Iizumi, Y. Uchino, K. Ueno, A. Koma, K. Saiki, Y. Inada, K. Nagai, Y. Iwasa, and T. Mitani
pp.
8281-8285
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Diffusion studies in nonequilibrium systems with attractive interactions
E. Arapaki, P. Argyrakis, and M. C. Tringides
pp.
8286-8294
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Nucleation and step flow on ultraflat silicon
Paul Finnie and Yoshikazu Homma
pp.
8313-8317
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Opposite rumpling of the MgO and CaO (100) surfaces: A density-functional theory study
Dominic R. Alfonso, James A. Snyder, John E. Jaffe, Anthony C. Hess, and Maciej Gutowski
pp.
8318-8322
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Electric-current-induced step bunching on Si(111)
Yoshikazu Homma and Noriyuki Aizawa
pp.
8323-8329
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Nucleation on top of islands in epitaxial growth
Stefan Heinrichs, Jörg Rottler, and Philipp Maass
pp.
8338-8359
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Layer growth of methane on MgO: An adsorption isotherm study
Andrea Freitag and J. Z. Larese
pp.
8360-8365
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Ordered alloying of Pd with the Mo(100) Surface
D. Wu, W. K. Lau, Z. Q. He, Y. J. Feng, M. S. Altman, and C. T. Chan
pp.
8366-8375
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Morphology evolution during the growth of strained-layer superlattices
L. E. Shilkrot, D. J. Srolovitz, and J. Tersoff
pp.
8397-8409
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Quantum computation using electrons trapped by surface acoustic waves
C. H. W. Barnes, J. M. Shilton, and A. M. Robinson
pp.
8410-8419
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First-principles study of electron transport through monatomic Al and Na wires
Nobuhiko Kobayashi, Mads Brandbyge, and Masaru Tsukada
pp.
8430-8437
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Geometry and electronic structures of magic transition-metal oxide clusters M9O6 (M=Fe, Co, and Ni)
Q. Sun, M. Sakurai, Q. Wang, J. Z. Yu, G. H. Wang, K. Sumiyama, and Y. Kawazoe
pp.
8500-8507
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Electrodynamics of metal-dielectric composites and electromagnetic crystals
Andrey K. Sarychev, R. C. McPhedran, and Vladimir M. Shalaev
pp.
8531-8539
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