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PROLA » Phys. Rev. B » Volume 62 » Issue 3
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Physical Review B – 15 July 2000
Volume 62, Issue 3

BRIEF REPORTS

Electronic structure: wide-band, narrow-band, and strongly correlated systems

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Laser frequency stabilization using regenerative spectral hole burning
N. M. Strickland, P. B. Sellin, Y. Sun, J. L. Carlsten, and R. L. Cone
pp. 1473-1476 [View PDF (61 kB)]
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Splitting of triply degenerate refractive indices by photonic crystals
Hideo Kosaka, Akihisa Tomita, Takayuki Kawashima, Takashi Sato, and Shojiro Kawakami
pp. 1477-1480 [View PDF (297 kB)]
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Fermi surface of composite fermions and one-particle excitations at ν=1/2: Effect of band-mass anisotropy
D. B. Balagurov and Yu. E. Lozovik
pp. 1481-1484 [View PDF (65 kB)]
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Specific heat of the periodic Anderson model at finite U
Hong-Gang Luo and Shun-Jin Wang
pp. 1485-1488 [View PDF (78 kB)]
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Measuring the size of excitons on isolated phenylene-vinylene chains: From dimers to polymers
Gerwin H. Gelinck, Jacob J. Piet, Bas R. Wegewijs, Klaus Müllen, Jurjen Wildeman, Georges Hadziioannou, and John M. Warman
pp. 1489-1491 [View PDF (49 kB)]
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Electron-hole liquid in the hexaborides
M. E. Zhitomirsky and T. M. Rice
pp. 1492-1495 [View PDF (63 kB)]
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Polaron features of the one-dimensional Holstein molecular crystal model
V. Cataudella, G. De Filippis, and G. Iadonisi
pp. 1496-1499 [View PDF (66 kB)]
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Role of occupied d states in the relaxation of hot electrons in Au
I. Campillo, J. M. Pitarke, A. Rubio, and P. M. Echenique
pp. 1500-1503 [View PDF (61 kB)]
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Temperature dependence of the structural parameters of the host lattice in blue bronze K0.3MoO3
Mingliang Tian, Lin Chen, and Yuheng Zhang
pp. 1504-1507 [View PDF (55 kB)]
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Lithium trapping by excess oxygen in WO3: A first-principles study
G. A. de Wijs and R. A. de Groot
pp. 1508-1511 [View PDF (251 kB)]
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Electronic structure of the superconducting layered ternary nitrides CaTaN2 and CaNbN2
Josep M. Oliva, Ruben Weht, Pablo Ordejón, and Enric Canadell
pp. 1512-1515 [View PDF (63 kB)]
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Fragility of photonic band gaps in inverse-opal photonic crystals
Zhi-Yuan Li and Zhao-Qing Zhang
pp. 1516-1519 [View PDF (58 kB)]
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Giant low-temperature enhancement of magneto-optic Kerr effects in PtMnSb
R. Carey, D. M. Newman, and M. L. Wears
pp. 1520-1523 [View PDF (62 kB)]

Semiconductors I: bulk

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First-principles study of aluminum and sodium complexes with hydrogen in silicon dioxide
Marco Magagnini
pp. 1524-1527 [View PDF (241 kB)]
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Self-interstitial in diamond
Gordon Davies, Hannah Smith, and H. Kanda
pp. 1528-1531 [View PDF (63 kB)]
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Time-resolved photoluminescence study of hydrogenated amorphous silicon nitride
Kwang Soo Seol, Takashi Watanabe, Makoto Fujimaki, Hiromitsu Kato, Yoshimichi Ohki, and Makoto Takiyama
pp. 1532-1535 [View PDF (67 kB)]
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Resonant Raman scattering in spontaneously ordered GaInP2
Hyeonsik M. Cheong, Angelo Mascarenhas, John F. Geisz, and Jerry M. Olson
pp. 1536-1539 [View PDF (58 kB)]

Semiconductors II: surfaces, interfaces, microstructures, and related topics

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High-density ultrasmall epitaxial Ge islands on Si(111) surfaces with a SiO2 coverage
Alexander A. Shklyaev, Motoshi Shibata, and Masakazu Ichikawa
pp. 1540-1543 [View PDF (507 kB)]
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Thermodynamics of half-filled Landau levels: A study of the composite fermion mass
Luis G. C. Rego
pp. 1544-1547 [View PDF (64 kB)]
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From spatially indirect excitons to momentum-space indirect excitons by an in-plane magnetic field
L. V. Butov, A. V. Mintsev, Yu. E. Lozovik, K. L. Campman, and A. C. Gossard
pp. 1548-1551 [View PDF (69 kB)]
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Asymmetric photoluminescence spectra from excitons in a coupled microcavity
M. Emam-Ismail, V. N. Astratov, M. S. Skolnick, D. M. Whittaker, and J. S. Roberts
pp. 1552-1555 [View PDF (62 kB)]
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Structural and electronic properties of the Sn/Si(111)√3×√3R30° surface
G. Profeta, A. Continenza, L. Ottaviano, W. Mannstadt, and A. J. Freeman
pp. 1556-1559 [View PDF (359 kB)]
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Peak position of the intersubband absorption spectrum of quantum wells with controlled electron concentrations
S. Tsujino, M. Rüfenacht, H. Nakajima, T. Noda, C. Metzner, and H. Sakaki
pp. 1560-1563 [View PDF (70 kB)]
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Single-electron acoustic charge transport on shallow-etched channels in a perpendicular magnetic field
J. Cunningham, V. I. Talyanskii, J. M. Shilton, M. Pepper, A. Kristensen, and P. E. Lindelof
pp. 1564-1567 [View PDF (313 kB)]
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Dynamics of carrier tunneling between vertically aligned double quantum dots
Atsushi Tackeuchi, Takamasa Kuroda, Kazuo Mase, Yoshiaki Nakata, and Naoki Yokoyama
pp. 1568-1571 [View PDF (79 kB)]
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Frictional drag between coupled two-dimensional hole gases in GaAs/Al0.3Ga0.7As heterostructures
C. Jörger, S. J. Cheng, H. Rubel, W. Dietsche, R. Gerhardts, P. Specht, K. Eberl, and K. v. Klitzing
pp. 1572-1575 [View PDF (78 kB)]
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Shot noise of Coulomb drag current
V. L. Gurevich and M. I. Muradov
pp. 1576-1579 [View PDF (73 kB)]
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Transport through a coupled quantum dot system: Role of interdot interactions
Sushil Lamba and S. K. Joshi
pp. 1580-1583 [View PDF (60 kB)]
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Quantum confinement of quasi-two-dimensional E1 excitons in Ge nanocrystals studied by resonant Raman scattering
K. L. Teo, S. H. Kwok, P. Y. Yu, and Soumyendu Guha
pp. 1584-1587 [View PDF (65 kB)]
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Transfer of coherent dynamics between discrete excitons and exciton Fano continua in quantum wells
S. Arlt, J. Kunde, F. Morier-Genoud, U. Keller, and U. Siegner
pp. 1588-1591 [View PDF (57 kB)]
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Effects of few-particle interaction on the atomiclike levels of a single strain-induced quantum dot
Ross Rinaldi, Salvatore Antonaci, Massimo DeVittorio, Roberto Cingolani, Ulrich Hohenester, Elisa Molinari, Harri Lipsanen, and Jukka Tulkki
pp. 1592-1595 [View PDF (103 kB)]
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Adsorption of benzene on Si(100) from first principles
Pier Luigi Silvestrelli, Francesco Ancilotto, and Flavio Toigo
pp. 1596-1599 [View PDF (121 kB)]

Surface physics, low-dimensional systems, and related topics

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Structures and electronic properties of small carbon nanotube tori
Dong-Hwa Oh, Jung Mee Park, and Kwang S. Kim
pp. 1600-1603 [View PDF (144 kB)]
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Unambiguous assignment of the ground state of a nearly degenerate cluster
G. L. Gutsev, S. N. Khanna, and P. Jena
pp. 1604-1606 [View PDF (42 kB)]
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Hydrogen-bonded array of NH2 on the Si(100) surface
Jun-Hyung Cho and Kwang S. Kim
pp. 1607-1610 [View PDF (325 kB)]
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Energetics and many-particle mechanisms of two-dimensional cluster diffusion on Cu(100) surfaces
O. S. Trushin, P. Salo, and T. Ala-Nissila
pp. 1611-1614 [View PDF (56 kB)]
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In-induced surface reconstruction on GaSb(001)
Fumihiko Maeda, Munehiro Sugiyama, and Yoshio Watanabe
pp. 1615-1618 [View PDF (118 kB)]
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Kinetic roughening during rare-gas homoepitaxy
E. Nabighian, M. C. Bartelt, and X. D. Zhu
pp. 1619-1622 [View PDF (83 kB)]
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Bilayer growth in the initial stages of Mg epitaxy on Mo(001)
D. F. Droppo, C. D. Storey, and M. C. Gallagher
pp. 1623-1626 [View PDF (209 kB)]
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Fine-structure analysis of Gd M45 near-edge EELS on the valence state of Gd@C82 microcrystals
K. Suenaga, S. Iijima, H. Kato, and H. Shinohara
pp. 1627-1630 [View PDF (177 kB)]
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Natural linewidth of the Ag(111) L-gap surface state as determined by photoemission spectroscopy
G. Nicolay, F. Reinert, S. Schmidt, D. Ehm, P. Steiner, and S. Hüfner
pp. 1631-1634 [View PDF (156 kB)]
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Determination of the lattice relaxation at the Yb(111) surface using chemical-shift photoelectron diffraction
M. E. Dávila, S. L. Molodtsov, M. C. Asensio, and C. Laubschat
pp. 1635-1638 [View PDF (111 kB)]
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Coherent radiation scattering by resonant nanostructures
V. V. Klimov and V. S. Letokhov
pp. 1639-1642 [View PDF (81 kB)]
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Pressure dependence of the optical absorption spectra of single-walled carbon nanotube films
S. Kazaoui, N. Minami, H. Yamawaki, K. Aoki, H. Kataura, and Y. Achiba
pp. 1643-1646 [View PDF (51 kB)]
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Pattern evolution of NiSi2 grown on a Si surface upon high-current pulsed Ni-ion implantation
H. N. Zhu, K. Y. Gao, and B. X. Liu
pp. 1647-1650 [View PDF (287 kB)]
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Covalent interaction of H with the d electrons at the (111) surface of Ag
Geunseop Lee and E. W. Plummer
pp. 1651-1654 [View PDF (82 kB)]

ARTICLES

Electronic structure: wide-band, narrow-band, and strongly correlated systems

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Anderson-Mott transition in a magnetic field: Corrections to scaling
D. Belitz and T. R. Kirkpatrick
pp. 1655-1659 [View PDF (59 kB)]
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LDA and GGA calculations for high-pressure phase transitions in ZnO and MgO
John E. Jaffe, James A. Snyder, Zijing Lin, and Anthony C. Hess
pp. 1660-1665 [View PDF (91 kB)]
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Polarization and localization in insulators: Generating function approach
Ivo Souza, Tim Wilkens, and Richard M. Martin
pp. 1666-1683 [View PDF (253 kB)]
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Limits on phase separation for two-dimensional strongly correlated electrons
W. O. Putikka and M. U. Luchini
pp. 1684-1687 [View PDF (62 kB)]
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Bound-state instability of the chiral Luttinger liquid in one dimension
A. F. Ho and P. Coleman
pp. 1688-1698 [View PDF (193 kB)]
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Slabs of stabilized jellium: Quantum-size and self-compression effects
I. Sarria, C. Henriques, C. Fiolhais, and J. M. Pitarke
pp. 1699-1705 [View PDF (133 kB)]
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Influence of crystal structure and quasiparticle effects on second-harmonic generation: Silicon carbide polytypes
B. Adolph and F. Bechstedt
pp. 1706-1712 [View PDF (103 kB)]
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Towards grid-based O(N) density-functional theory methods: Optimized nonorthogonal orbitals and multigrid acceleration
J.-L. Fattebert and J. Bernholc
pp. 1713-1722 [View PDF (143 kB)]
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Multiple-scattering EXAFS and EXELFS of titanium aluminum alloys
T. Sikora, G. Hug, M. Jaouen, and J. J. Rehr
pp. 1723-1732 [View PDF (200 kB)]
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Electronic structure and optical properties of CdMoO4 and CdWO4
Y. Abraham, N. A. W. Holzwarth, and R. T. Williams
pp. 1733-1741 [View PDF (409 kB)]
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Electronic structure and optical spectra of LuInCu4 and YbMCu4 (M=Cu, Ag, Au, Pd, and In)
V. N. Antonov, M. Galli, F. Marabelli, A. N. Yaresko, A. Ya. Perlov, and E. Bauer
pp. 1742-1752 [View PDF (319 kB)]
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Dielectric response of the charge-induced correlated state in the quasi-one-dimensional conductor (TMTTF)2PF6
F. Nad, P. Monceau, C. Carcel, and J. M. Fabre
pp. 1753-1756 [View PDF (64 kB)]
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Mechanism for linear and nonlinear optical effects in LiB3O5, CsB3O5, and CsLiB6O10 crystals
Zheshuai Lin, Jiao Lin, Zhizhong Wang, Chuangtian Chen, and Ming-Hsien Lee
pp. 1757-1764 [View PDF (125 kB)]
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Scaling properties of one-dimensional Anderson models in an electric field: Exponential versus factorial localization
Matthias Weiss, Tsampikos Kottos, and T. Geisel
pp. 1765-1772 [View PDF (132 kB)]
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Electronic structure of α- and δ-Pu from photoelectron spectroscopy
A. J. Arko, J. J. Joyce, L. Morales, J. Wills, J. Lashley, F. Wastin, and J. Rebizant
pp. 1773-1779 [View PDF (274 kB)]
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Emission spectrum of a dipole in a semi-infinite periodic dielectric structure: Effect of the boundary
A. G. Galstyan, M. E. Raikh, and Z. V. Vardeny
pp. 1780-1786 [View PDF (143 kB)]
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Many-body vertex corrections in a one-dimensional electron system interacting with a long-range Coulomb potential
B. Tanatar and E. Demirel
pp. 1787-1792 [View PDF (96 kB)]
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7Li NMR studies of Li1-xZnxV2O4 and Li(V1-yTiy)2O4
W. Trinkl, N. Büttgen, H. Kaps, A. Loidl, M. Klemm, and S. Horn
pp. 1793-1800 [View PDF (141 kB)]

Semiconductors I: bulk

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Electrical resistivity of a-SiC:H as a function of temperature: Evidence for discontinuities
R. Murri, N. Pinto, G. Ambrosone, and U. Coscia
pp. 1801-1805 [View PDF (81 kB)]
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Role of NiAs phase in pressure-induced structural phase transitions in IIA-VI chalcogenides
Aparna Chakrabarti
pp. 1806-1814 [View PDF (94 kB)]
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Lattice-strain field induced by {311} self-interstitial defects in silicon
Paola Alippi and Luciano Colombo
pp. 1815-1820 [View PDF (981 kB)]
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Fluorine atoms in AlAs, GaAs, and InAs: Stable state, diffusion, and carrier passivation
Akihito Taguchi, Takahisa Ohno, and Taizo Sasaki
pp. 1821-1827 [View PDF (138 kB)]
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Mechanisms of the semi-insulating conversion of InP by anelastic spectroscopy
R. Cantelli, F. Cordero, O. Palumbo, G. Cannelli, F. Trequattrini, G. M. Guadalupi, and B. Molinas
pp. 1828-1834 [View PDF (103 kB)]
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Cumulant expansion approach to stimulated emission in semiconductor lasers
Witold Bardyszewski, David Yevick, and Mirosław Prywata
pp. 1835-1842 [View PDF (115 kB)]
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Generalization of k⋅p theory for periodic perturbations
R. Stubner, R. Winkler, and O. Pankratov
pp. 1843-1850 [View PDF (119 kB)]
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First-principles calculation of the interaction between nitrogen atoms and vacancies in silicon
H. Sawada and K. Kawakami
pp. 1851-1858 [View PDF (147 kB)]
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Experimental study of negative differential conductivity in GaAs:Cr
R. M. Rubinger, A. G. de Oliveira, J. C. Bezerra, G. M. Ribeiro, W. N. Rodrigues, and M. V. B. Moreira
pp. 1859-1865 [View PDF (149 kB)]
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Role of electronegativity in semiconductors: Isoelectronic S, Se, and O in ZnTe
M. J. Seong, H. Alawadhi, I. Miotkowski, A. K. Ramdas, and S. Miotkowska
pp. 1866-1872 [View PDF (100 kB)]
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Inter-valence-band electronic Raman scattering due to photoexcited holes in Ge1-xSix
Elena Nazvanova, Tohru Suemoto, Shoichi Maruyama, and Yukio Takano
pp. 1873-1877 [View PDF (85 kB)]
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Defect study of light-emitting HCl-treated porous silicon
S. M. Prokes, W. E. Carlos, Lenward Seals, and James L. Gole
pp. 1878-1882 [View PDF (95 kB)]

Semiconductors II: surfaces, interfaces, microstructures, and related topics

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Local structure of (Ge4Si4)5 monolayer strained-layer superlattice probed by fluorescence x-ray absorption fine structure
Shiqiang Wei, Hiroyuki Oyanagi, K. Sakamoto, Y. Takeda, and T. P. Pearsall
pp. 1883-1888 [View PDF (100 kB)]
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Absence of a step-edge barrier on a polar semiconductor surface with reconstruction
Makoto Itoh and Takahisa Ohno
pp. 1889-1896 [View PDF (816 kB)]
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Size, shape, and stability of InAs quantum dots on the GaAs(001) substrate
L. G. Wang, P. Kratzer, N. Moll, and M. Scheffler
pp. 1897-1904 [View PDF (146 kB)]
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Level quantization in the narrow-gap-semiconductor quantum well in a parallel magnetic field
V. K. Dugaev, V. I. Litvinov, and W. Dobrowolski
pp. 1905-1911 [View PDF (112 kB)]
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Coulomb coupling and the role of symmetries in quantum-dot arrays for cellular automata
F. Ramírez, E. Cota, and S. E. Ulloa
pp. 1912-1920 [View PDF (130 kB)]
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Transition between compressible and incompressible states in infinite-layer fractional quantum Hall systems
Sei Suzuki and Yoshio Kuramoto
pp. 1921-1928 [View PDF (227 kB)]
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Boundary condition for the interface between silicon and silicon oxide
J. U. Kim and Hong H. Lee
pp. 1929-1934 [View PDF (86 kB)]
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Interaction-induced magnetization of a two-dimensional electron gas
Felix von Oppen, Denis Ullmo, and Harold U. Baranger
pp. 1935-1942 [View PDF (117 kB)]
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Free harmonic oscillators, Jack polynomials, and Calogero-Sutherland systems
N. Gurappa and Prasanta K. Panigrahi
pp. 1943-1949 [View PDF (80 kB)]
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Modular recursive Green’s function method for ballistic quantum transport
Stefan Rotter, Jian-Zhi Tang, Ludger Wirtz, Johannes Trost, and Joachim Burgdörfer
pp. 1950-1960 [View PDF (438 kB)]
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Transport through double quantum dots
R. Ziegler, C. Bruder, and Herbert Schoeller
pp. 1961-1970 [View PDF (385 kB)]
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Measurement of semiconductor local carrier concentration from displacement current-voltage curves with a scanning vibrating probe
Yutaka Majima, Yutaka Oyama, and Mitsumasa Iwamoto
pp. 1971-1977 [View PDF (184 kB)]
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Landauer-Büttiker formula for time-dependent transport through resonant-tunneling structures: A nonequilibrium Green’s function approach
J. Q. You, Chi-Hang Lam, and H. Z. Zheng
pp. 1978-1983 [View PDF (88 kB)]
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Phonon-coupled electron tunneling in two- and three-dimensional tunneling configurations
E. Pazy and B. Laikhtman
pp. 1984-1992 [View PDF (113 kB)]
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Collective modes of quantum Hall stripes
R. Côté and H. A. Fertig
pp. 1993-2007 [View PDF (246 kB)]
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Liouvillian approach to the integer quantum Hall effect transition
Jairo Sinova, V. Meden, and S. M. Girvin
pp. 2008-2015 [View PDF (113 kB)]
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Optical study of thermally annealed Er-doped hydrogenated a-Si films
A. R. Zanatta and F. L. Freire, Jr.
pp. 2016-2020 [View PDF (184 kB)]
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Luminescence decay kinetics of Mn2+-doped ZnS nanoclusters grown in reverse micelles
Brian A. Smith, Jin Z. Zhang, Alan Joly, and Jun Liu
pp. 2021-2028 [View PDF (103 kB)]
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Atomic structural changes of a Br-chemisorbed Si(111)-7×7 surface under 10–150 eV electron impact
Kozo Mochiji and Masakazu Ichikawa
pp. 2029-2033 [View PDF (481 kB)]
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Capacitance of a molecular overlayer on the silicon surface measured by scanning tunneling microscopy
Ryota Akiyama, Takuya Matsumoto, and Tomoji Kawai
pp. 2034-2038 [View PDF (208 kB)]
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First-principles electron-ion dynamics of excited systems: H-terminated Si(111) surfaces
Yoshiyuki Miyamoto and Osamu Sugino
pp. 2039-2044 [View PDF (130 kB)]
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Exciton formation assisted by LO phonons in quantum wells
I.-K. Oh, Jai Singh, A. Thilagam, and A. S. Vengurlekar
pp. 2045-2050 [View PDF (96 kB)]
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Anisotropy of the electron g factor in lattice-matched and strained-layer III-V quantum wells
A. Malinowski and R. T. Harley
pp. 2051-2056 [View PDF (82 kB)]
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Effects of electron-electron scattering on electron-beam propagation in a two-dimensional electron gas
H. Predel, H. Buhmann, L. W. Molenkamp, R. N. Gurzhi, A. N. Kalinenko, A. I. Kopeliovich, and A. V. Yanovsky
pp. 2057-2064 [View PDF (172 kB)]

Surface physics, low-dimensional systems, and related topics

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Role of tip shape in light emission from the scanning tunneling microscope
J. Aizpurua, S. P. Apell, and R. Berndt
pp. 2065-2073 [View PDF (389 kB)]
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Atomically resolved edges and kinks of NaCl islands on Cu(111): Experiment and theory
R. Bennewitz, A. S. Foster, L. N. Kantorovich, M. Bammerlin, Ch. Loppacher, S. Schär, M. Guggisberg, E. Meyer, and A. L. Shluger
pp. 2074-2084 [View PDF (848 kB)]
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Size effect in Mn2+-doped BaTiO3 nanopowders observed by electron paramagnetic resonance
R. Böttcher, C. Klimm, D. Michel, H.-C. Semmelhack, G. Völkel, H.-J. Gläsel, and E. Hartmann
pp. 2085-2095 [View PDF (163 kB)]
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Nanofaceting of vicinal Nb(011)
C. P. Flynn, W. Swieçh, R. S. Appleton, and M. Ondrejcek
pp. 2096-2107 [View PDF (1,540 kB)]
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Determination of step-edge orientation by helium atom scattering
M. Patting, D. Farías, and K. H. Rieder
pp. 2108-2112 [View PDF (279 kB)]
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Surface x-ray diffraction study of the Rh(100)(2×2)-O reconstruction
A. G. Norris, F. Schedin, G. Thornton, V. R. Dhanak, T. S. Turner, and R. McGrath
pp. 2113-2117 [View PDF (358 kB)]
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Surface roughening in shadowing growth and etching in 2+1 dimensions
Jason T. Drotar, Y.-P. Zhao, T.-M. Lu, and G.-C. Wang
pp. 2118-2125 [View PDF (584 kB)]
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Surface energetics in a heteroepitaxial model system: Co/Cu(111)
J. E. Prieto, J. de la Figuera, and R. Miranda
pp. 2126-2133 [View PDF (401 kB)]
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Ordering and percolation transitions for hard squares: Equilibrium versus nonequilibrium models for adsorbed layers with c(2×2) superlattice ordering
Da-Jiang Liu and J. W. Evans
pp. 2134-2145 [View PDF (546 kB)]
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Dynamics near the surface reconstruction of W(100)
M. R. Baldan, E. Granato, and S. C. Ying
pp. 2146-2150 [View PDF (96 kB)]
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Distorted iron films on GaAs(001)-(4×6)
R. A. Gordon, E. D. Crozier, D.-T. Jiang, T. L. Monchesky, and B. Heinrich
pp. 2151-2157 [View PDF (198 kB)]
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Growth kinetics of CaF2/Si(111) for a two-step deposition
Andreas Klust, Robert Kayser, and Joachim Wollschläger
pp. 2158-2163 [View PDF (392 kB)]
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In situ x-ray diffraction topography studies on the phase formation in thin yttrium hydride films
A. Remhof, G. Song, C. Sutter, D. Labergerie, M. Hübener, H. Zabel, and J. Härtwig
pp. 2164-2172 [View PDF (613 kB)]
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Uptake of gases in bundles of carbon nanotubes
George Stan, Mary J. Bojan, Stefano Curtarolo, Silvina M. Gatica, and Milton W. Cole
pp. 2173-2180 [View PDF (106 kB)]
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Wave spectrum of multilayers with finite thicknesses of interfaces
V. A. Ignatchenko, Yu. I. Mankov, and A. A. Maradudin
pp. 2181-2184 [View PDF (61 kB)]
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Stable two-dimensional soliton supported by a local nonlinearity
Er’el Granot and Boris A. Malomed
pp. 2185-2187 [View PDF (45 kB)]
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Fano resonances in electronic transport through a single-electron transistor
J. Göres, D. Goldhaber-Gordon, S. Heemeyer, M. A. Kastner, Hadas Shtrikman, D. Mahalu, and U. Meirav
pp. 2188-2194 [View PDF (193 kB)]
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Anomalous hopping exponents of ultrathin metal films
N. Marković, C. Christiansen, D. E. Grupp, A. M. Mack, G. Martinez-Arizala, and A. M. Goldman
pp. 2195-2200 [View PDF (94 kB)]
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Electrical properties of self-assembled carbon networks
L. V. Govor, M. Goldbach, I. A. Bashmakov, I. B. Butylina, and J. Parisi
pp. 2201-2208 [View PDF (229 kB)]
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Ab initio studies of the CoSi2(100)/Si(100) interface
R. Stadler and R. Podloucky
pp. 2209-2219 [View PDF (1,829 kB)]
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Ab initio studies of 5-atom ring carbon and silicon amorphous clusters both pure and with group-V impurities
R. M. Valladares, C. C. Díaz, M. Arroyo, M. A. Mc Nelis, and Ariel A. Valladares
pp. 2220-2226 [View PDF (409 kB)]

COMMENTS

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Comment on “Correlation holes in a spin-polarized dense electron gas”
Karla Schmidt, Stefan Kurth, Jianmin Tao, and John P. Perdew
pp. 2227-2231 [View PDF (88 kB)]
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Reply to “Comment on ‘Correlation holes in a spin-polarized dense electron gas’ ”
Vitaly A. Rassolov, John A. Pople, and Mark A. Ratner
pp. 2232-2235 [View PDF (58 kB)]
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Comment on “Local dimer-adatom stacking fault structures from 3×3 to 13×13 along Si(111)-7×7 domain boundaries”
Makoto Itoh
pp. 2236 [View PDF (20 kB)]
 
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