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Physical Review Letters – 8 July 2002
Volume 89, Issue 2

Map of the electrostatic potential caused by boron and phosphorous doping in a 0.35-micron silicon transistor, as determined by electron holography. The spatial resolution is 6 nanometers and the field of view is about 700 nanometers. [M. A. Gribelyuk, M. R. McCartney, Jing Li, C. S. Murthy, P. Ronsheim, B. Doris, J. S. McMurray, S. Hegde, and David J. Smith, Phys. Rev. Lett. 89, 025502 (2002)]

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